RM15N650HD

RM15N650T2
RM15N650TI

N-Channel Super Junction Power MOSFETĊ

General Description
The series of devices use advanced super junction VDS @Tjmax 650 V
technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 mΩ
gate charge. This super junction MOSFET fits the industry’s ID 15 A
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
ƽNew technology for high voltage device
ƽLow on-resistance and low conduction losses
ƽSmall package
ƽUltra Low Gate Charge cause lower driving requirements
ƽ100% Avalanche Tested
ƽROHS compliant

Application
ƽ Power factor correction˄PFC˅
ƽ Switched mode power supplies(SMPS) Schematic diagram
ƽ Uninterruptible Power Supply˄UPS˅

Package Marking And Ordering Information

Device Device Package Marking
RM15N650HD TO-263 15N650
RM15N650T2 TO-220 15N650
RM15N650TI TO-220F 15N650

TO-263 TO-220 TO-220F

Table 1. Absolute Maximum Ratings (TC=25ć)
RM15N650HD
Parameter Symbol RM15N650TI Unit
RM15N650T2
Drain-Source Voltage (VGS=0V˅ VDS 650 V
Gate-Source Voltage (VDS=0V) VGS f30 V
Continuous Drain Current at Tc=25°C ID (DC) 15 15* A
Continuous Drain Current at Tc=100°C ID (DC) 10 10* A
(Note 1)
Pulsed drain current IDM (pluse) 45 45* A
Maximum Power Dissipation(Tc=25ć) PD 145 33.5 W
Derate above 25°C 1.16 0.268 W/°C
(Note 2)
Single pulse avalanche energy EAS 370 mJ
(Note 1)
Avalanche current IAR 7.5 A
Repetitive Avalanche energy ˈtAR limited by Tjmax
(Note 1) EAR 0.8 mJ

2017-02
REV:O15
 RM15N650HD
Parameter Symbol RM15N650TI Unit
RM15N650T2
Drain Source voltage slope, VDS İ480 V, dv/dt 50 V/ns
Reverse diode dv/dtˈVDS İ480 V,ISD<ID dv/dt 15 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 °C
* limited by maximum junction temperature

Table 2. Thermal Characteristic

RM15N650HD
Parameter Symbol RM15N650TI Unit
RM15N650T2
Thermal ResistanceˈJunction-to-Case˄Maximum˅ RthJC 0.86 3.73 °C /W
Thermal ResistanceˈJunction-to-Ambient ˄Maximum˅ RthJA 62 80 °C /W
Table 3. Electrical Characteristics (TA=25ćunless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250ȝA 650 V
Zero Gate Voltage Drain Current(Tc=25ć) IDSS VDS=650V,VGS=0V 1 ȝA
Zero Gate Voltage Drain Current(Tc=125ć) IDSS VDS=650V,VGS=0V 100 ȝA
Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250ȝA 2.5 3 3.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8A 230 260 mȍ
Dynamic Characteristics
Forward Transconductance gFS VDS = 20V, ID = 8A 11 S
Input Capacitance Clss 1360 pF
VDS=50V,VGS=0V,
Output Capacitance Coss 115 pF
F=1.0MHz
Reverse Transfer Capacitance Crss 4.8 pF
Total Gate Charge Qg 29 45 nC
VDS=480V,ID=15A,
Gate-Source Charge Qgs 6.5 nC
VGS=10V
Gate-Drain Charge Qgd 12 nC
Intrinsic gate resistance RG f = 1 MHz open drain 10 ȍ
Switching times
Turn-on Delay Time td(on) 10 nS
Turn-on Rise Time tr VDD=380V,ID=8A, 5 nS
Turn-Off Delay Time td(off) RG=5.5ȍ,VGS=10V 55 75 nS
Turn-Off Fall Time tf 4.5 10 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode) ISD 15 A
TC=25°C
Pulsed Source-drain current(Body Diode) ISDM 45 A
Forward On Voltage VSD Tj=25°C,ISD=8A,VGS=0V 0.9 1.2 V
Reverse Recovery Time trr 270 nS
Reverse Recovery Charge Qrr Tj=25°C,IF=8A,di/dt=100A/ȝs 3.3 uC
Peak Reverse Recovery Current Irrm 24 A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25ć,VDD=50V,VG=10V, RG=25ȍ

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 RATING AND CHARACTERISTICS CURVES (RM15N650HD/T2/TI)

Figure1. Safe operating area Figure2. Safe operating area for TO-220F

Figure3. Source-Drain Diode Forward Voltage Figure4. Output characteristics

Figure5. Transfer characteristics Figure6. Static drain-source on resistance

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 RATING AND CHARACTERISTICS CURVES (RM15N650HD/T2/TI)

Figure7. RDS(ON) vs Junction Temperature Figure8. BVDSS vs Junction Temperature

Figure9. Maximum ID vs Junction Temperature Figure10. Gate charge waveforms

Figure11. Capacitance Figure12. Transient Thermal Impedance

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 RATING AND CHARACTERISTICS CURVES (RM15N650HD/T2/TI)

Figure13. Transient Thermal Impedance for TO-220F

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Testcircuit
˅Gate charge test circuit & Waveform
1˅

2˅Switch Time Test Circuit˖







3˅Unclamped Inductive Switching Test Circuit & Waveforms

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TO-263-2L Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.170 1.370 0.046 0.054
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 15.050 15.450 0.593 0.608
L1 5.080 5.480 0.200 0.216
L2 2.340 2.740 0.092 0.108
L3 1.300 1.700 0.051 0.067
V 5.600 REF 0.220 REF

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TO-220-3L-C Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.9500 9.750 0.352 0.384
E1 12.650 12.950 0.498 0.510
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 7.500 REF. 0.295 REF.
ž 3.400 3.800 0.134 0.150

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TO-220F Package Information

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 DISCLAIMER NOTICE

Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.

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