Ordering number :EN5962

NPN Triple Diffused Planar Silicon Transistor

TS7994
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications

Features Package Dimensions

• High speed. unit:mm
• High breakdown voltage (VCBO=1600V). 2048B-TO3PBL
• High reliability (Adoption of HVP process).
[TS7994]
• Adoption of MBIT process.
20.0

6.0
ø3.3 5.0

26.0

1.0
2.0

2.0
3.4
0.6

20.7
1.2

1 2 3 1:Base

2.8
2:Collector
3:Emitter
5.45 5.45
SANYO:TO-3PBL

Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Symbol Conditions Ratings Unit
Colletctor-to-Base Voltage VCBO 1600 V
Colletctor-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 25 A
Collector Current (Pulse) ICP 50 A
Collector Dissipation PC 3.5 W
Tc=25˚ C 210 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICES VCE=1600V, RBE=0 1.0 mA
Collector Sustain Voltage VCEO(SUS) IC=100mA, IB=0 800 V
Emitter Cutoff Current IEBO VEB=4V, IC=0 1.0 mA
Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA
DC Current Gain hFE(1) VCE=5V, IC=1.0A 15 30
hFE(2) VCE=5V, IC=18A 4 7
C-E Saturation Voltage VCE(sat) IC=18A, IB=4.5A 5 V
B-E Saturation Voltage VBE(sat) IC=18A, IB=4.5A 1.5 V
Storage Time tstg IC=15A, IB1=2.5A, IB2=–6.25A 3.0 µs
Fall Time tf IC=15A, IB1=2.5A, IB2=–6.25A 0.2 µs

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1622 No.5962-1/3
 TS7994
Switching Time Test Circuit

PW=20µs IB1
DC≤1%
IB2
OUTPUT
INPUT

RB
RL=13.3Ω
VR
+ +
50Ω
100µF 470µF

VBE=–2V VCC=200V

I C - VCE I C - VBE
30 25
10.0A VCE =5V
8.0A
25
6.0A 20
Collerctor Current, IC – A

Collerctor Current, IC – A
5.0A
20 4.0A
3.0A 15

15 2.0A

1.0A 10

0˚C

˚C
10

25˚C
12
0.5A

–40
=
Ta
5
5

IB =0
0 0
0 1 2 3 4 5 6
7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE – V Base-to-Emitter Voltage, VBE – V

100
hFE - I C VCE(sat) - I C
10
VCE =5V 7 IC / IB =5
7
5
Saturation Voltage, VCE(sat) – V

5
3
Ta=120˚C 2
3
DC Current Gain, hFE

2 25˚C 1.0
7
5
Collector-to-Emitter

–40˚C
10 3
7 2
Ta=–40˚C
5 0.1
7
3 5 120˚C 25˚C

2 3
2

1.0 0.01
0.1 2 3 5 7 1.0 2 3
5 7 10 2 3 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC – A Collector Current, IC – A
SW Time - I C SW Time - I B2
10 10
t stg VCC =200V
7 7 IC =15A
5 t stg 5 IB1 =2.5A
Switching Time, SW Time – µs

Switching Time, SW Time – µs

R load
3 3
2 2

1.0 1.0
7
tf
7
5 5
tf
3 3
2 2
VCC =200V
0.1 IC / IB1=6 0.1
I / I =2.5
7 B2 B1 7
5
R load 5
7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2
Collector Current, IC – A Base Current, IB2 – A
No.5962-2/3
 , TS7994
Forward Bias A S O 100
Reverse Bias A S O
100
7 ICP 7
5 5
3 IC

30
PC 3

0µ
2 =2
10

s
Collector Current, IC – A

Collector Current, IC – A
10 W 2

1m
10m
7

s
10
5

s
7
3 5
2 D
C
op 3
1.0 er
at 2
7 io
5 n
1.0
3
2 7
5
0.1 L=100µH
7 3 IB2 =–5A
5 Tc=25˚C 2 Tc=25˚C
3 1pulse 1pulse
2 0.1
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 5 7 10 2 3 5 7 100 2 3 5
Collector-to-Emitter Voltage, VCE – V Collector-to-Emitter Voltage, VCE – V

P C - Ta 240
P C - Tc
4.0

3.5 210
200
Collector Dissipation, PC – W

Collector Dissipation, PC – W
3.0

No 160
he
at
sin
2.0 k 120

80
1.0
40

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.

This catalog provides information as of April, 1998. Specifications and information herein are subject to
change without notice.
PS No.5962-3/3