Scribd Logo
Upload

Welcome to Scribd!

  • 178 views

    Home Assignment

    Uploaded by

    Effecure Healthcare
    This document contains 10 homework questions related to semiconductor devices and pn junctions. The questions cover topics like calculating drift velocity, depletion width, capacitance, current components, and more. They also ask about the construction and working of different types of diodes like Schottky diodes, photo diodes, and light emitting diodes.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Home Assignment

    Uploaded by

    Effecure Healthcare
    178 views2 pages
    This document contains 10 homework questions related to semiconductor devices and pn junctions. The questions cover topics like calculating drift velocity, depletion width, capacitance, current components, and more. They also ask about the construction and working of different types of diodes like Schottky diodes, photo diodes, and light emitting diodes.

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document contains 10 homework questions related to semiconductor devices and pn junctions. The questions cover topics like calculating drift velocity, depletion width, capacitance, current components, and more. They also ask about the construction and working of different types of diodes like Schottky diodes, photo diodes, and light emitting diodes.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    178 views2 pages

    Home Assignment

    Uploaded by

    Effecure Healthcare
    This document contains 10 homework questions related to semiconductor devices and pn junctions. The questions cover topics like calculating drift velocity, depletion width, capacitance, current components, and more. They also ask about the construction and working of different types of diodes like Schottky diodes, photo diodes, and light emitting diodes.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Home Assignment

    S.No. Question

    1. A uniform bar of n-type silicon of 2-μm length has a voltage of 1 V applied across
    it. If ND =1016/cm3 and μn = 1350 cm2/V·s, find (a) the electron drift velocity, (b) the
    time it takes an electron to cross the 2-μm length, (c) the drift-current density, and
    (d) the drift current in the case that the silicon bar has a cross-sectional area of
    0.25 μm2.
    2. A silicon crystal having a cross-sectional area of 0.001 cm2 and a length of 10−3 cm
    is connected at its ends to a 10 V battery. At T = 300 K, a current of 100 mA flows
    in the silicon. Calculate (a) the required resistance R, (b) the required conductivity,(c)
    the density of donor atoms to be added to achieve this conductivity.
    3. Consider a bar of silicon in which a hole concentration profile described by:
    −𝑥
    𝑝(𝑥) = 𝑝0 𝑒 𝐿𝑝
    is established. Find the hole-current density at x = 0. Let p0 = 1016/cm3, Lp = 1 μm,
    and Dp = 12 cm2/s. If the cross-sectional area of the bar is 100 μm2, find the current
    Ip.
    4. For a particular junction for which Cj0 = 0.4 pF, V0 = 0.75 V, and m = 1/3, find Cj at
    reverse-bias voltages of 1 V and 10 V.
    5. An abrupt silicon pn junction at zero bias has dopant concentrations of
    Na = 1017 cm−3 and Nd = 5 ×1015 cm−3. T = 300 K. (a) Calculate the Fermi level on
    each side of the junction with respect to the intrinsic Fermi level. (b) Sketch the
    equilibrium energy band diagram for the junction and determine Vbi from the
    diagram. d) Determine xn, xp, and the peak electric field for this junction.
    6. Calculate the built-in voltage of a junction in which the p and n regions are doped
    equally with 1016 atoms/cm3. Assume ni = 1.5 × 1010/cm3. With the terminals left
    open, what is the width of the depletion region, and how far does it extend into the p
    and n regions? If the cross-sectional area of the junction is 100 μm2, find the
    magnitude of the charge stored on either side of the junction.
    7. Consider a pn junction for which NA =1018/cm3, ND =1016/cm3, A =10−4cm2, and
    ni = 1.5 × 1010/cm3, let Lp = 5 μm, Ln = 10 μm, Dp (in the n region) = 10 cm2/V·s,
    and Dn (in the p region) = 18 cm2/V·s. The pn junction is forward biased and
    conducting a current I = 0.1 mA. Calculate:(a) IS; (b) the forward-bias voltage V;
    and (c) the component of the current I due to hole injection and that due to electron
    injection across the junction.
    8. For the circuit shown in figure (a) and determine R1 and IS. Measurements indicate
    that IX = 1 mA → VX = 1.2 V and IX = 2 mA → VX = 1.8 V. Calculate R1 and IS.

    Figure (a)
    9. Explain the construction, working principle and applications of the Schottky diode
    with the help of energy band diagrams.
    10. Explain the working principle and applications of the following diodes:
    i. Photo diode
    ii. Light emitting diode

    You might also like