LinearL2TM IXTK90N25L2 VDSS = 250V

Power MOSFET IXTX90N25L2 ID25 = 90A

w/ Extended FBSOA RDS(on) < 36m

N-Channel Enhancement Mode

Avalanche Rated TO-264 (IXTK)

Symbol Test Conditions Maximum Ratings

G
VDSS TJ = 25C to 150C 250 V D
S
VDGR TJ = 25C to 150C, RGS = 1M 250 V Tab
VGSS Continuous 20 V
VGSM Transient 30 V PLUS247 (IXTX)
ID25 TC = 25C 90 A
IDM TC = 25C, Pulse Width Limited by TJM 360 A
IA TC = 25C 45 A
EAS TC = 25C 3 J G
D
PD TC = 25C 960 W S Tab

TJ -55...+150  C
G = Gate D = Drain
TJM 150  C S = Source Tab = Drain
Tstg -55...+150  C
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Md Mounting Torque (TO-264) 1.13/10 Nm/lb.in
FC Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Features
Weight TO-264 10 g

PLUS247 6 g Designed for Linear Operation

International Standard Packages

Avalanche Rated

Guaranteed FBSOA at 75C

Advantages
 Easy to Mount
 Space Savings
Symbol Test Conditions Characteristic Values  High Power Density
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
Applications
BVDSS VGS = 0V, ID = 1mA 250 V

VGS(th) VDS = VGS, ID = 3mA 2.0 4.5 V Solid State Circuit Breakers

Soft Start Controls
IGSS VGS = 20V, VDS = 0V 200 nA 
Linear Amplifiers

IDSS VDS = VDSS, VGS = 0V 50  A Programmable Loads

TJ = 125C 2.5 mA Current Regulators

RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 36 m

© 2016 IXYS CORPORATION, All Rights Reserved DS100080A(4/16)

 IXTK90N25L2
IXTX90N25L2
Symbol Test Conditions Characteristic Values TO-264 AA Outline
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 35 50 65 S
Ciss 23 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2140 pF
Crss 360 pF
td(on) 50 ns
Resistive Switching Times
tr 175 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Terminals: 1 - Gate
td(off) 40 ns 2 - Drain
RG = 1 (External) 3 - Source
tf 160 ns 4 - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 640 nC
A 4.82 5.13 .190 .202
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 125 nC A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
Qgd 385 nC b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
RthJC 0.13 C/W b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
RthCS 0.15      C/W D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
Safe Operating Area Specification L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342
Min. Typ. Max. R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
SOA VDS = 250V, ID = 2.3A, TC = 75C, Tp = 5s 575 W S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

PLUS 247TM Outline

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 90 A
ISM Repetitive, Pulse Width Limited by TJM 360 A
VSD IF = 45A, VGS = 0V, Note 1 1.5 V
trr 266 ns
IF = 45A, -di/dt = 100A/s,
IRM 23 A
VR = 80V, VGS = 0V
QRM 3.0 μC
Terminals: 1 - Gate
2 - Drain
3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.
A 4.83 5.21 .190 .205
Note: 1. Pulse test, t  300s, duty cycle, d  2%. A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
b2 2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXTK90N25L2
IXTX90N25L2

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

90 300
VGS = 20V
VGS = 20V 12V
80 12V
10V 250 14V 10V
9V
70

200 9V
60 8V

I D - Amperes
I D - Amperes

50
150
40 8V
7V
30 100

6V
20 7V
50
10 5V
6V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30
VDS - Volts VDS - Volts

Fig. 4. RDS(on) Normalized to ID = 45A Value vs.

Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature
90 2.4
VGS = 20V
80 2.2 VGS = 10V
12V
10V
70 9V 2.0
8V
R DS(on) - Normalized

60 1.8
I D - Amperes

I D = 90A
50 7V 1.6
I D = 45A
40 1.4

30 1.2
6V
20 1.0

10 0.8
5V
0 0.6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Fig. 6. Maximum Drain Current vs.
Drain Current Case Temperature
2.6 100

VGS = 10V 90
2.4
80
2.2 TJ = 125ºC
RDS(on) - Normalized

70
2.0
I D - Amperes

60
1.8
50
1.6
40
1.4
30
1.2 TJ = 25ºC 20

1.0 10

0.8 0
0 20 40 60 80 100 120 140 160 180 200 220 240 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade

© 2016 IXYS CORPORATION, All Rights Reserved

 IXTK90N25L2
IXTX90N25L2

Fig. 7. Input Admittance Fig. 8. Transconductance

160 120
TJ = - 40ºC
140
100

120 25ºC
TJ = 125ºC
80
I D - Amperes

g f s - Siemens
100 25ºC
125ºC
- 40ºC
80 60

60
40

40
20
20

0 0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 20 40 60 80 100 120 140
VGS - Volts I D - Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge
280 16

VDS = 125V
14
240 I D = 45A
I G = 10mA
12
200
I S - Amperes

10
VGS - Volts

160
8
120
6

80 TJ = 125ºC 4

40 TJ = 25ºC 2

0 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 100 200 300 400 500 600 700 800 900 1000
VSD - Volts QG - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance

100,000 1
f = 1 MHz
Capacitance - PicoFarads

C iss
10,000 0.1
Z(th)JC - K / W

C oss
1,000 0.01

C rss

100 0.001
0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS - Volts Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXTK90N25L2
IXTX90N25L2

Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area
@ TC = 25ºC @ TC = 75ºC
1,000 1,000

RDS(on) Limit RDS(on) Limit

100
25µs
100
25µs
I D - Am peres

100µs

I D - Am peres
100µs

1ms
1ms
10 10ms 10

100ms 10ms
TJ = 150ºC DC TJ = 150ºC
100ms
TC = 25ºC TC = 75ºC DC
Single Pulse Single Pulse
1 1
10 100 1000 10 100 1000
VDS - Volts VDS - Volts

© 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90N25L2(9R)12-01-08