AP9971GM

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Low On-resistance BVDSS 60V

D2
▼ Single Drive Requirement D1
D2 RDS(ON) 50mΩ
D1
▼ Surface Mount Package ID 5A
G2
S2
G1
SO-8 S1
D2
D1
Description
G2
Advanced Power MOSFETs from APEC provide the G1
designer with the best combination of fast switching, S1 S2
ruggedized device design, ultra low on-resistance and
cost-effectiveness.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage +25 V
ID@TA=25℃ Continuous Drain Current3, VGS @ 10V 5 A
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ID@TA=100℃ Continuous Drain Current , VGS @ 10V 3.2 A
1,2
IDM Pulsed Drain Current 30 A
PD@TA=25℃ Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 ℃/W

Data and specifications subject to change without notice 1

200811042
 AP9971GM

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5A - - 50 mΩ
VGS=4.5V, ID=2.5A - - 60 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=5A - 16 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +25V - - +100 nA
2
Qg Total Gate Charge ID=5A - 32.5 - nC
Qgs Gate-Source Charge VDS=48V - 4.9 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.8 - nC
2
td(on) Turn-on Delay Time VDS=30V - 9.6 - ns
tr Rise Time ID=5A - 10 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 30 - ns
tf Fall Time RD=6Ω - 5.5 - ns
Ciss Input Capacitance VGS=0V - 1658 - pF
Coss Output Capacitance VDS=25V - 156 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 109 - pF

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Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.6A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=5A, VGS=0V, - 29.2 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP9971GM

35 35

T A =25 C
o 10V
30 10V 30
T A =150 o C 6.0V
6.0V 4.5V

ID , Drain Current (A)

ID , Drain Current (A)

25
4.5V 25

20 20

15 15

10 10 V G =3.0V
V G =3.0V
5 5

0 0
0 1 2 3 4 5 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

55 2.4

I D =5A
I D =5A V G =10V
2.0
50 T A =25 o C
Normalized RDS(ON)

1.6
RDSON (mΩ)

45

1.2

40

0.8

35
0.4

30 0.0
1 2 3 4 5 6 7 8 9 10 11 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

www.DataSheet4U.com T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100 2.8

2.4

10

2
VGS(th) (V)

o o
T j =150 C T j =25 C
IS (A)

1 1.6

1.2

0.1

0.8

0.01 0.4
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
 AP9971GM
f=1.0MHz
14 10000

I D =5A
12
VGS , Gate to Source Voltage (V)

V DS =30V
10 V DS =38V Ciss
1000
V DS =48V

C (pF)
8

6
Coss
100
Crss
4

0 10
0 5 10 15 20 25 30 35 40 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

DUTY=0.5
Normalized Thermal Response (R thja)

0.2
10
100us
0.1 0.1
1ms
0.05
ID (A)

1 PDM
10ms 0.02
t
T
0.01
0.01 Duty factor = t/T
100ms Peak Tj = P DM x Rthja + Ta

0.1 Rthja = 135℃/W

o 1s
T A =25 C Single Pulse

Single Pulse
DC
0.01 0.001
0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000
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V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG

10V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E
c 0.19 0.22 0.25
D 4.80 4.90 5.00
1
2 3 4 E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e 1.27 TYP
e G 0.254 TYP
B L 0.38 － 0.90
α 0.00 4.00 8.00

A1

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.
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Part Marking Information & Packing : SO-8

Part Number
Package Code
meet Rohs requirement
9971GM
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence