Scribd Logo
Upload

Welcome to Scribd!

  • 18 views

    Silicon NPN Power Transistors: BUH417D

    Uploaded by

    PaCo Aguirre BuRgos
    The BUH417D is a high voltage, high speed switching silicon NPN power transistor in a TO-3PML package. It is intended for use in switching power supplies for TVs and monitors. It has absolute maximum ratings of 1500V collector-base voltage, 700V collector-emitter voltage, and 150°C junction temperature. Key electrical characteristics include a 700V collector-emitter sustaining voltage, 1.5V saturation voltage at 4A collector current, and a thermal resistance of 2.27°C/W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon NPN Power Transistors: BUH417D

    Uploaded by

    PaCo Aguirre BuRgos
    18 views3 pages
    The BUH417D is a high voltage, high speed switching silicon NPN power transistor in a TO-3PML package. It is intended for use in switching power supplies for TVs and monitors. It has absolute maximum ratings of 1500V collector-base voltage, 700V collector-emitter voltage, and 150°C junction temperature. Key electrical characteristics include a 700V collector-emitter sustaining voltage, 1.5V saturation voltage at 4A collector current, and a thermal resistance of 2.27°C/W.

    Original Title

    BUH417D_SavantIC

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The BUH417D is a high voltage, high speed switching silicon NPN power transistor in a TO-3PML package. It is intended for use in switching power supplies for TVs and monitors. It has absolute maximum ratings of 1500V collector-base voltage, 700V collector-emitter voltage, and 150°C junction temperature. Key electrical characteristics include a 700V collector-emitter sustaining voltage, 1.5V saturation voltage at 4A collector current, and a thermal resistance of 2.27°C/W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views3 pages

    Silicon NPN Power Transistors: BUH417D

    Uploaded by

    PaCo Aguirre BuRgos
    The BUH417D is a high voltage, high speed switching silicon NPN power transistor in a TO-3PML package. It is intended for use in switching power supplies for TVs and monitors. It has absolute maximum ratings of 1500V collector-base voltage, 700V collector-emitter voltage, and 150°C junction temperature. Key electrical characteristics include a 700V collector-emitter sustaining voltage, 1.5V saturation voltage at 4A collector current, and a thermal resistance of 2.27°C/W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 3

    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUH417D

    DESCRIPTION
    www.datasheet4u.com
    ·With TO-3PML package
    ·High voltage
    ·High speed switching
    ·Built-in damper diode

    APPLICATIONS
    ·Switching power supply for TV’s
    and monitors

    PINNING

    PIN DESCRIPTION

    1 Base

    2 Collector

    Fig.1 simplified outline (TO-3PML) and symbol


    3 Emitter

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 1500 V

    VCEO Collector-emitter voltage Open base 700 V

    VEBO Emitter-base voltage Open collector 10 V

    IC Collector current (DC) 7 A

    ICM Collector current -peak tp<5ms 12 A

    IB Base current (DC) 4 A

    IBM Base current -peak tp<5ms 7 A

    Ptot Total power dissipation TC=25 55 W

    Tj Junction temperature 150

    Tstg Storage temperature -65~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUH417D

    CHARACTERISTICS
    Tj=25 unless otherwise specified
    www.datasheet4u.com
    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V

    VCEsat Collector-emitter saturation voltage IC=4A ; IB=1A 1.5 V

    VBEsat Base-emitter saturation voltage IC=4A ; IB=1A 1.3 V

    VCE=1700V; VBE=0 1.0


    ICES Collector cut-off current mA
    Tj=125 2.0

    IEBO Emitter cut-off current VEB=5V; IC=0 200 mA

    hFE-1 DC current gain IC=1A ; VCE=5V 8 36

    hFE-2 DC current gain IC=4A ; VCE=5V 6

    VF Diode forward voltage IF=4A 2 V

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal resistance from junction to case 2.27 /W

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors BUH417D

    PACKAGE OUTLINE

    www.datasheet4u.com

    Fig.2 Outline dimensions

    You might also like