2–16 GHz Low Noise

Gallium Arsenide FET

Technical Data

ATF-13736

Features Description 36 micro-X Package

• Low Noise Figure: The ATF-13736 is a high perfor-
1.8␣ dB Typical at 12␣ GHz mance gallium arsenide Schottky-
• High Associated Gain: barrier-gate field effect transistor
9.0␣ dB Typical at 12␣ GHz housed in a cost effective
microstrip package. Its noise
• High Output Power:
figure makes this device appropri-
17.5␣ dB Typical at 12␣ GHz
ate for use in the gain stages of
• Cost Effective Ceramic low noise amplifiers operating in
Microstrip Package the 2-16 GHz frequency range.
• Tape-and-Reel Packaging 250␣ microns. Proven gold based
Option Available[1] This GaAs FET device has a metallization systems and nitride
nominal 0.3 micron gate length passivation assure a rugged,
with a total gate periphery of reliable device.

Electrical Specifications, TA = 25°C

Symbol Parameters and Test Conditions Units Min. Typ. Max.
NFO Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 1.5
f = 12.0 GHz dB 1.8 2.2
f = 14.0 GHz dB 2.1
GA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 11.5
f = 12.0 GHz dB 8.0 9.0
f = 14.0 GHz dB 7.0
P1 dB Power Output @ 1 dB Gain Compression: f =12.0 GHz dBm 17.5
VDS = 4 V, IDS = 40 mA
G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA f = 12.0 GHz dB 8.5
gm Transconductance: VDS = 2.5 V, VGS = 0 V mmho 25 55
IDSS Saturated Drain Current: VDS = 2.5 V, VGS = 0 V mA 40 50 90
VP Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA V -4.0 -1.5 -0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
 2

ATF-13736 Absolute Maximum Ratings

Absolute Notes:
Symbol Parameter Units Maximum [1] 1. Permanent damage may occur if
any of these limits are exceeded.
VDS Drain-Source Voltage V +5
2. TCASE TEMPERATURE = 25°C.
VGS Gate-Source Voltage V -4
3. Derate at 2.5 mW/°C for
VGD Gate-Drain Voltage V -6 TCASE > 85°C.
IDS Drain Current mA IDSS 4. Storage above +150°C may tarnish
PT Power Dissipation [2,3] mW 225 the leads of this package making it
difficult to solder into a circuit.
TCH Channel Temperature °C 175
After a device has been soldered
TSTG Storage Temperature[4] °C -65 to +175 into a circuit, it may be safely
stored up to 175°C.
Thermal Resistance: θjc = 400°C/W; TCH = 150°C 5. The small spot size of this tech-
nique results in a higher, though
Liquid Crystal Measurement: 1␣ µm Spot Size[5]
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
Part Number Ordering Information more information.
Part Number Devices Per Reel Reel Size
ATF-13736-TR1 1000 7"
ATF-13736-STR 10 strip

ATF-13736 Noise Parameters: VDS = 2.5 V, IDS = 20 mA

Freq. NFO Γopt
GHz dB RN/50
Mag Ang
4.0 1.1 .71 102 .10
6.0 1.3 .55 147 .07
8.0 1.5 .46 -144 .19
12.0 1.8 .50 -40 .88
14.0 2.1 .52 -2 1.17

ATF-13736 Typical Performance, TA = 25°C

16 25 25

14
20 20 MSG
GA (dB)

12
GA MSG
10
GAIN (dB)

GAIN (dB)

15 15
MAG
2.0 8 MSG
MAG
10 10 |S21|2
1.5 6
NFO (dB)

NFO |S21|2
1.0
5 5
0.5

0 0 0
6.0 8.0 10.0 12.0 14.0 16.0 2.0 4.0 6.0 8.0 10.0 12.0 16.0 2.0 4.0 6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz)

Figure 1. Optimum Noise Figure and Figure 2. Insertion Power Gain, Figure 3. Insertion Power Gain,
Associated Gain vs. Frequency. Maximum Available Gain and Maximum Available Gain and
VDS = 2.5 V, IDS = 20 mA, TA = 25°C. Maximum Stable Gain vs. Frequency. Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA. VDS = 4 V, IDS = 40 mA.
 3

Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 2.5 V, IDS␣ =␣ 20 mA

Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
2.0 .94 -46 11.0 3.56 128 -26.4 .048 55 .59 -36
3.0 .86 -70 10.2 3.23 109 -25.2 .055 40 .57 -47
4.0 .84 -90 9.8 3.08 91 -23.1 .070 31 .56 -55
5.0 .77 -110 9.6 3.02 69 -20.9 .090 18 .52 -63
6.0 .68 -135 9.9 3.14 51 -19.3 .109 7 .47 -75
7.0 .59 -170 9.9 3.13 24 -18.0 .126 -12 .39 -92
8.0 .54 149 9.5 2.99 -1 -17.6 .132 -27 .30 -112
9.0 .56 112 8.8 2.75 -22 -16.9 .143 -43 .19 -121
10.0 .58 86 8.1 2.53 -43 -16.4 .152 -58 .11 -140
11.0 .60 63 7.6 2.41 -66 -16.5 .149 -73 .09 92
12.0 .64 39 7.0 2.24 -90 -17.1 .140 -81 .15 47
13.0 .68 20 6.4 2.08 -106 -17.6 .132 -90 .19 21
14.0 .70 9 6.0 1.99 -130 -18.0 .126 -97 .19 -3
15.0 .72 -1 5.2 1.83 -145 -18.2 .123 -111 .15 -26
16.0 .74 -17 4.6 1.70 -177 -18.4 .120 -129 .11 -34

Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 4 V, IDS␣ =␣ 40 mA

Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
2.0 .88 -44 13.5 4.73 130 -26.4 .048 64 .67 -28
3.0 .76 -68 13.0 4.47 107 -24.9 .057 52 .61 -39
4.0 .68 -90 12.4 4.19 86 -22.5 .075 39 .57 -46
5.0 .56 -113 12.0 4.00 66 -21.0 .089 32 .52 -52
6.0 .42 -145 11.8 3.90 44 -19.8 .102 21 .44 -61
7.0 .37 161 11.5 3.74 20 -18.6 .117 9 .31 -75
8.0 .47 116 10.5 3.36 -3 -17.9 .128 -5 .17 -95
9.0 .57 90 9.4 2.96 -23 -17.2 .138 -19 .05 -143
10.0 .63 70 8.9 2.77 -41 -17.4 .135 -28 .06 128
11.0 .69 51 7.9 2.47 -63 -17.7 .131 -39 .17 100
12.0 .77 33 7.1 2.26 -82 -18.0 .126 -52 .26 75
13.0 .82 21 6.0 2.00 -101 -18.6 .118 -65 .35 62
14.0 .85 13 5.4 1.86 -117 -19.2 .110 -75 .39 54
15.0 .83 1 4.8 1.73 -134 -19.7 .104 -83 .41 49
16.0 .81 -17 4.4 1.65 -154 -19.8 .102 -103 .42 41
A model for this device is available in the DEVICE MODELS section.
36 micro-X Package Dimensions
2.15
(0.085) SOURCE
4 2.11 (0.083) DIA.

DRAIN
137

GATE 1 3

0.508
SOURCE 2 (0.020)

1.45 ± 0.25
(0.057 ± 0.010) 2.54
(0.100) 0.15 ± 0.05
(0.006 ± 0.002)

0.56
4.57 ± 0.25
(0.022)
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13

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Data subject to change.

Copyright © 1998 Hewlett-Packard Co.

Obsoletes 5965-8722E
Printed in U.S.A. 5967-5771E (5/98)