New Product

Si4463BDY
Vishay Siliconix

P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY
VDS (V) rDS(on) (Ω) ID (A)
0.011 at VGS = - 10 V - 13.7
- 20 0.014 at VGS = - 4.5 V - 12.3 RoHS
COMPLIANT
0.020 at VGS = - 2.5 V - 10.3

SO-8

S 1 8 D G
S 2 7 D

S 3 6 D
G 4 5 D

Top View
D

Ordering Information: Si4463BDY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage VDS - 20
V
Gate-Source Voltage VGS ± 12
TA = 25 °C - 13.7 - 9.8
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C - 11.1 - 7.9
A
Pulsed Drain Current IDM - 50
Continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36
TA = 25 °C 3.0 1.5
Maximum Power Dissipationa PD W
TA = 70 °C 1.9 0.95
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 sec 35 42
Maximum Junction-to-Ambienta RthJA
Steady State 70 84 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.

Document Number: 72789 www.vishay.com

S-71598-Rev. B, 30-Jul-07 1
 New Product
Si4463BDY
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.4 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
VDS = - 20 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V - 30 A
VGS = - 10 V, ID = - 13.7 A 0.0085 0.011
Drain-Source On-State Resistance a rDS(on) VGS = - 4.5 V, ID = - 12.3 A 0.010 0.014 Ω
VGS = - 2.5 V, ID = - 5 A 0.015 0.020
Forward Transconductancea gfs VDS = - 10 V, ID = - 13.7 A 44 S
a VSD IS = - 2.7 A, VGS = 0 V - 0.7 - 1.1 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 37 56
Gate-Source Charge Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 13.7 A 8.7 nC
Gate-Drain Charge Qgd 11
Gate Resistance Rg f = 1 MHz 2.7 Ω
Turn-On Delay Time td(on) 35 55
Rise Time tr VDD = - 10 V, RL = 10 Ω 60 90
Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 115 170
ns
Fall Time tf 75 115
Source-Drain Reverse Recovery
trr IF = - 2.3 A, di/dt = 100 A/µs 50 75
Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50 50

VGS = 10 thru 2.5 V

40 40
I D – Drain Current (A)

I D – Drain Current (A)

30 30

2V
20 20
TC = 125 °C

10 10
1.5 V 25 °C
- 55 °C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 72789

2 S-71598-Rev. B, 30-Jul-07
 New Product
Si4463BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.04 5000
r DS(on) – On-Resistance (Ω)

4000

C – Capacitance (pF)
0.03 Ciss

3000

0.02
VGS = 2.5 V
2000
VGS = 4.5 V Coss
0.01
1000
VGS = 10 V
Crss

0.00 0
0 10 20 30 40 50 0 4 8 12 16 20

ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

5 1.4
VDS = 10 V VGS = 10 V
V GS – Gate-to-Source Voltage (V)

ID = 13.7 A ID = 13.7 A
1.3
4
rDS(on) – On-Resistance

1.2
(Normalized)

1.1

2
1.0

1
0.9

0 0.8
0 5 10 15 20 25 30 35 40 - 50 - 25 0 25 50 75 100 125 150
Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

50 0.05
ID = 5 A

0.04
r DS(on) – On-Resistance (Ω)
I S – Source Current (A)

TJ = 150 °C ID = 13.7 A
10 0.03

0.02

TJ = 25 °C
0.01

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 72789 www.vishay.com

S-71598-Rev. B, 30-Jul-07 3
 New Product
Si4463BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.6 50

0.4 40
V GS(th) Variance (V)

ID = 250 µA
30

Power (W)
0.2

0.0 20

- 0.2 10

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ – Temperature (°C) Time (sec)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
IDM Limited

rDS(on) Limited

10 P(t) = 0.001
I D – Drain Current (A)

P(t) = 0.01
ID(on)
1 Limited
P(t) = 0.1

P(t) = 1

TC = 25 °C P(t) = 10
0.1 Single Pulse dc

BVDSS Limited
0.01
0.1 1 10 100
VDS – Drain-to-Source Voltage (V)
Safe Operating Area

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10- 4 10- 3 10- 2 10- 1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient

www.vishay.com Document Number: 72789

4 S-71598-Rev. B, 30-Jul-07
 New Product
Si4463BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse

0.01
10- 4 10- 3 10- 2 10- 1 1 10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72789.

Document Number: 72789 www.vishay.com

S-71598-Rev. B, 30-Jul-07 5
 Legal Disclaimer Notice
Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1