Power Transistor Array STA461C

Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA4 (LF400B)
Symbol Ratings Unit Symbol Test Conditions Ratings Unit
VCBO 65±5 V ICBO VCB = 60V 10max µA 25.25
±0.2

VCEO 65±5 V IEBO VEB = 6V 10max µA

VEBO 6 V VCEO IC = 50mA 60 to 70 V b

±0.2
±0.2

±0.2

9.0
±6 (pulse ±10) a

11.3
IC A hFE VCE = 1V, IC = 1A 400 to 1500

2.3
IB 1 A VCE (sat) IC = 1.5A, IB = 15mA 0.15max V

±0.5
3.2 (Ta = 25ºC) W VFEC IFEC = 6A 1.5max V

4.7
PT
18 (Tc = 25ºC) W Es/b L = 10mH, single pulse 80min mJ 1.0
±0.25
0.5
±0.15 (2.54)

Tj 150 ºC
±0.05
9• 2.54=22.86
Tstg –55 to +150 ºC Typical Switching Characteristics

±0.15

±0.2
±0.2
±0.5±
C1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton t stg tf

4.0
1.2
0.5
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs)
12 12 1 10 –5 30 –30 0.2 3.9 0.2 1 2 3 4 5 6 7 8 9 10
B C E B C E

a) Type No.
b) Lot No.
(Unit: mm)

■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IC Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VCE = 1V)
7 0.75 6
30mA
IC / IB = 100
6 20mA
5
10mA
VCE (sat) (V)

5
0.5 4 Ta = 125ºC
4 75ºC

IC (A)
5mA Ta = –55ºC
IC (A)

25ºC 3 25ºC
3 75ºC –55ºC
3mA
0.25 125ºC 2
2

IB = 1mA 1
1

0 0 0
0 1 2 3 4 5 0.01 0.1 1 10 0 0.5 1.0 1.5

VCE (V) IC (A) VBE (V)

■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg • t f — IC Characteristics ■ j-a — t Characteristics

(VCE = 1V)
2000 5 10
tstg Single pulse
5
1000
ton•tstg•tf (µS)

(ºC/W)

VCC = 12V
500 1 IB1 = – IB2 = 30mA 1
hFE

Ta = 125ºC
j-a

0.5 0.5
75ºC
25ºC tf
100 –55ºC 0.1
ton
50 0.1 0.05
0.01 0.1 1 10 0 1 2 3 0.1 1 10 100 2000

IC (A) Ic (A) t (ms)

■ Safe Operating Area (single pulse) ■ PT — Ta Derating

Equivalent Circuit Diagram
20 20
0.5m

10
s

5 15
1m

3 8
ith
in
s
10m

fin
ite
PT (W)

he
s
IC (A)

at
si
nk

10
1
2 7
0.5
5
Withou
t heat
Without heatsink sink
natural air cooling 4 9
0.1 0
1 5 10 50 100 0 50 100 150
VCE (V) Ta (ºC)

65