STA464C Sanken

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Power Transistor Array STA464C

Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA4
Symbol Ratings Unit Ratings
Symbol Test Conditions Unit
VCBO 65±5 V min typ max 25.25
±0.2

VCEO 65±5 V ICBO VCB=60V 10 µA


VEBO 6 V IEBO VEB=6V 10 µA b

±0.2
±0.2

±0.2

9.0
a

11.3
IC 6 (pulse 10) A VCEO IC=50mA 60 65 70 V

2.3
IB 1 A hFE VCE=1V, IC=1A 400 800 1500

±0.5
3.5
20 (Tc=25ºC) VCE (sat) IC=1.5A, IB=15mA 0.09 0.15 V
PC W (2.54)
4 (Ta=25ºC) VFEC IFEC=6A 1.25 1.5 V 1.0
±0.25
0.5
±0.15

Tj 150 ºC Es/b L=10mH 80 mJ ±0.05


9 •2.54= (22.86)
Tstg –55 to +150 ºC (Root dimension)

±0.15

±0.2
±0.2
±0.5
C1.5

4.0
1.2
0.5
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E

a) Part No.
b) Lot No.
(Unit: mm)

■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IC Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VCE = 1V)
7 0.75 6
30mA
I C /IB = 100
6 20mA
5
10mA
VCE (sat) (V)

5
0.5 4 Ta = 125ºC
4 75ºC

IC (A)
5mA Ta= –55ºC
IC (A)

25ºC 3 25ºC
3 75ºC –55ºC
3mA
0.25 125ºC 2
2

IB = 1mA 1
1

0 0 0
0 1 2 3 4 5 0.01 0.1 1 10 0 0.5 1.0 1.5

VCE (V) IC (A) VBE (V)

■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg • t f — IC Characteristics


(VCE = 1V)
2000 5
tstg
1000
ton•tstg•tf (µS)

VCC = 12V
500 1 IB1 = – IB2 = 30mA
hFE

Ta = 125ºC
0.5
75ºC
25ºC tf
100 –55ºC
ton
50 0.1
0.01 0.1 1 10 0 1 2 3

IC (A) Ic (A)

■ Safe Operating Area (single pulse) ■ PT — Ta Derating


Equivalent Circuit Diagram
20 20
0.5m

10
s

15
W

5
1m

ith
in
s
10m

fin

3 5 7 9
ite
PT (W)

he
s

at
IC (A)

sin

10
k

1 2
4 6 8
0.5 1 10
5
Witho
Without heatsink ut he
atsin
k
natural air cooling

0.1 0
1 5 10 50 100 0 50 100 150
VCE (V) Ta (ºC)

107

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