MDF10N65B N-channel MOSFET 650V

MDF10N65B
N-Channel MOSFET 650V, 10.0A, 1.0Ω

General Description Features

The MDF10N65B MOSFET are produced using advanced  VDS = 650V
MagnaChip’s MOSFET Technology, which provides low on-  ID = 10.0A @ VGS = 10V
state resistance, high switching performance and excellent  RDS(ON) ≤ 1.0Ω @ VGS = 10V
quality.

MDF10N65B is suitable device for SMPS, high Speed Applications

switching and general purpose applications.
 Power Supply
 PFC
 High Current, High Speed Switching

TO-220F
MDF Series
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
TC=25oC 10.0* A
Continuous Drain Current o
ID
TC=100 C 5.0* A
(1)
Pulsed Drain Current IDM 40* A
o
TC=25 C 47.7 W
Power Dissipation PD
Derate above 25 oC 0.38 W/oC
Repetitive Avalanche Energy(1) EAR 15 mJ
(3)
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns
(4)
Single Pulse Avalanche Energy EAS 212 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
* Id limited by maximum junction temperature

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 2.62

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 MDF10N65B N-channel MOSFET 650V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
o
MDF10N65BTH -55~150 C TO-220F Tube Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 650 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V - - 1 μA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 4A 0.85 1.0 Ω
Forward Transconductance gfs VDS = 30V, ID = 4A - 10.6 - S
Dynamic Characteristics
Total Gate Charge Qg - 29.3 -
(3)
Gate-Source Charge Qgs VDS = 520V, ID = 8.0A, VGS = 10V - 7.0 - nC
Gate-Drain Charge Qgd - 11.2 -
Input Capacitance Ciss - 1202 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 7.08 - pF
Output Capacitance Coss - 128.3 -
Turn-On Delay Time td(on) - 19.4 -
Rise Time tr VGS = 10V, VDS = 325V, ID = 8.0A, - 48 -
Ns
Turn-Off Delay Time td(off) RG = 25Ω(3) - 96.5 -
Fall Time tf - 49 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 8 - A
Source Diode Forward Current
Source-Drain Diode Forward Voltage VSD IS = 8.0A, VGS = 0V - - 1.4 V
Body Diode Reverse Recovery Time trr - 326 - ns
IF = 8.0A, dl/dt = 100A/μs(3)
Body Diode Reverse Recovery Charge Qrr - 5.9 - μC

Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤8.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=7.0mH, IAS=8.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,

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 MDF10N65B N-channel MOSFET 650V
18
Vgs=5.0V
16 =5.5V
=6.0V
14 =6.5V
=7.0V
ID,Drain Current [A]

12 =8.0V VGS=10.0V
1.0
=10.0V

RDS(ON) [Ω ]
=15.0V VGS=20V
10

4 0.8
Notes
2 1. 250㎲ Pulse Test
2. TC=25
℃

0
0 5 10 15 2 4 6 8 10 12 14 16 18
VDS,Drain-Source Voltage [V] ID,Drain Current [A]
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.20

※ Notes : ※ Notes :
Drain-Source Breakdown Voltage 1.15 1. VGS = 0 V
1. VGS = 10 V
2.5 2. ID = 250㎂
2. ID = 4A
Drain-Source On-Resistance

1.10
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0
1.05

1.5 1.00

0.95
1.0

0.90

0.5
0.85

0.0 0.80
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

* Notes ; ※ Notes :
1. VGS = 0 V
1. Vds=30V
2.250s Pulse test
Reverse Drain Current [A]

10
10
ID(A)

IDR

150
℃ 25 ℃

150 ℃
25 ℃
-55 ℃

1 1
2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

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 MDF10N65B N-channel MOSFET 650V
Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 8.0A 2500 Coss = Cds + Cgd
Crss = Cgd
Coss
130V
VGS, Gate-Source Voltage [V]

8 2000
325V

520V

Capacitance [pF]
Ciss
6 1500

4 1000

Crss ※ Notes ;
1. VGS = 0 V
2 500 2. f = 1 MHz

0 0

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
Operation in This Area
is Limited by R DS(on) 10 s

10
1 100 s
1 ms
ID, Drain Current [A]

D=0.5
0
10 ms 10
1s 100 ms
Thermal Response

0.2
0
10 DC 0.1
Zθ JC(t),

0.05
-1
10 0.02
-1
10
※ Notes :
0.01
Single Pulse Duty Factor, D=t1/t2
TJ=Max rated PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
TC=25 ℃
RΘ JC=2.62 /W
℃

-2
single pulse
10
-1 0 1 2 -2
10 10 10 10 10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
VDS, Drain-Source Voltage [V] t1, Rectangular Pulse Duration [sec]

Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve

14000
8
single Pulse
12000 RthJC = 2.62 /W ℃

7
TC = 25 ℃

10000 6
ID, Drain Current [A]
Power (W)

8000 5

4
6000

3
4000
2

2000
1

0 0
1E-5 1E-4 1E-3 0.01 0.1 1 10 25 50 75 100 125 150

Pulse Width (s) TC, Case Temperature [ ] ℃

Fig.11 Single Pulse Maximum Power Fig.12 Maximum Drain Current vs. Case
Dissipation Temperature

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 MDF10N65B N-channel MOSFET 650V
Physical Dimensions

3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified

Symbol Min Nom Max

A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55

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 MDF10N65B N-channel MOSFET 650V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jun. 2010 Version 1.2 6 MagnaChip Semiconductor Ltd.