STB10N60M2, STD10N60M2, STP10N60M2

Datasheet

N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET

in a D²PAK, DPAK and TO-220 packages

TAB Features
TAB

2 2 3 Order codes VDS @ TJ max. RDS(on) max. ID Package

3 1

1 DPAK STB10N60M2 D²PAK

D²PAK

TAB STD10N60M2 650 V 0.60 Ω 7.5 A DPAK

STP10N60M2 TO-220

• Extremely low gate charge

3
1
2 • Excellent output capacitance (Coss) profile
TO-220 • 100% avalanche tested
D(2, TAB) • Zener-protected

G(1)
Applications
• Switching applications

S(3) Description
AM01476v1_tab

These devices are N-channel Power MOSFETs developed using the MDmesh M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.

Product status links

STB10N60M2
STD10N60M2
STP10N60M2

DS9703 - Rev 4 - January 2021 www.st.com

For further information contact your local STMicroelectronics sales office.
 STB10N60M2, STD10N60M2, STP10N60M2
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ±25 V

Drain current (continuous) at TC = 25 °C 7.5

ID A
Drain current (continuous) at TC = 100 °C 4.9

IDM(1) Drain current (pulsed) 30 A

PTOT Total power dissipation at TC = 25 °C 85 W

dv/dt(2) Peak diode recovery voltage slope 15

V/ns
dv/dt(3) MOSFET dv/dt ruggedness 50

Tstg Storage temperature range °C

-55 to 150
TJ Operating junction temperature range °C

1. Pulse limited by safe operating area.

2. ISD ≤ 7.5 A, di/dt ≤ 400 A/μs, VDS peak < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 480 V.

Table 2. Thermal data

Value
Symbol Parameter Unit
D2PAK DPAK TO-220

RthJC Thermal resistance, junction-to-case 1.47 °C/W

RthJB (1)
Thermal resistance, junction-to-board 30 50 °C/W

RthJA Thermal resistance, junction-to-ambient 62.5 °C/W

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR(1)
Avalanche current, repetitive or not repetitive 1.5 A

EAS(2) Single pulse avalanche energy 110 mJ

1. Pulse width limited by TJ max.

2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V.

DS9703 - Rev 4 page 2/27

 STB10N60M2, STD10N60M2, STP10N60M2
Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V

VGS = 0 V, VDS = 600 V 1

IDSS Zero gate voltage drain current µA
VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100

IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 3 A 0.55 0.60 Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 400 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 22 - pF

Crss Reverse transfer capacitance - 0.84 - pF

Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 83 - pF

RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 6.4 - Ω

Qg Total gate charge - 13.5 - nC

VDD = 480 V, ID = 7.5 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 16. Test circuit for gate - 2.1 - nC

Qgd charge behavior)

Gate-drain charge - 7.2 - nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 300 V, ID = 3.75 A, - 8.8 - ns

tr Rise time RG = 4.7 Ω, VGS = 10 V - 8 - ns

td(off) Turn-off delay time (see Figure 15. Test circuit for - 32.5 - ns
resistive load switching times and
tf Fall time Figure 20. Switching time waveform) - 13.2 - ns

DS9703 - Rev 4 page 3/27

 STB10N60M2, STD10N60M2, STP10N60M2
Electrical characteristics

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 7.5 A

ISDM (1)
Source-drain current (pulsed) - 30 A

VSD (2) Forward on voltage VGS = 0 V, ISD = 7.5 A - 1.6 V

trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs, - 270 ns

Qrr Reverse recovery charge VDD = 60 V - 2 µC

(see Figure 17. Test circuit for inductive
IRRM Reverse recovery current - 14.4 A
load switching and diode recovery times)
trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs, - 376 ns

Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 2.8 µC

(see Figure 17. Test circuit for inductive
IRRM Reverse recovery current - 15 A
load switching and diode recovery times)

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

DS9703 - Rev 4 page 4/27

 STB10N60M2, STD10N60M2, STP10N60M2
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 2. Maximum transient thermal impedance for

Figure 1. Safe operating area for D²PAK and TO-220
D²PAK and TO-220
ID GADG150120210825SOA
(A) IDM ZthJC GADG150120210847ZTH
(°C/W)
tp =1µs
10 1 ea 0.4 0.3 0.2
ar
is n) tp =10µs duty=0.5
th S(o
in R D 10 0
n y
tio b tp =100µs
ra ted
10 0 pe limi
Os RDS(on) max.
i tp =1ms
tp =10ms
10 -1 0.1
10 -1 V(BR)DSS
RthJC = 1.47 °C/W
duty = ton / T
TJ = 150 °C 0.05
TC = 25 °C Single pulse ton
Single pulse
10 -2 T
10 -1 10 0 10 1 10 2 VDS (V) 10 -2
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s)

Figure 3. Safe operating area for DPAK Figure 4. Maximum transient thermal impedance for DPAK
ID GADG150120210932SOA
ZthJC GADG150120211138ZTH
(A) IDM (°C/W)

tp =1µs
ea 0.4 0.3 0.2
10 1 ar
is n) tp =10µs duty=0.5
th S(o 10 0
in R D
n y
tio b tp =100µs
ra ted
10 0 pe limi
Os RDS(on) max.
i tp =1ms
tp =10ms 10 -1 0.1 RthJC = 1.47 °C/W
duty = ton / T
10 -1 V(BR)DSS 0.05
TJ = 150 °C Single pulse ton
TC = 25 °C T
Single pulse 10 -2
10 -2 tp (s)
VDS (V) 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 -1 10 0 10 1 10 2

Figure 5. Output characteristics Figure 6. Transfer characteristics

AM15823v1 AM15824v1
ID ID (A)
(A) VGS=7, 8, 9, 10V
VDS=18V
14 14
6V
12 12

10 10

8 8

6 6
5V
4 4

2 2
4V
0 0
0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)

DS9703 - Rev 4 page 5/27

 STB10N60M2, STD10N60M2, STP10N60M2
Electrical characteristics (curves)

Figure 7. Gate charge vs gate-source voltage Figure 8. Static drain-source on-resistance

AM15825v1 AM15826v1
VGS VDS RDS(on)
(V) (Ω)
(V)
12 VDS VDD=480V VGS=10 V
ID=7.5A 500 0.58

10
400 0.57
8
300 0.56
6
200 0.55
4

100 0.54
2

0 0 0.53
0 2 4 6 8 10 12 Qg(nC) 1 2 3 4 5 6 7 ID(A)

Figure 10. Normalized gate threshold voltage vs

Figure 9. Capacitance variations
temperature
C AM15827v1
VGS(th) AM15828v1
(pF) (norm)

ID=250 µA
1000
1.1
Ciss

100
1.0

Coss
10 f = 1 MHz 0.9

1 Crss
0.8

0.1
0.1 1 10 100 VDS (V) 0.7
-50 -25 0 25 50 75 100 125 TJ(°C)

Figure 11. Normalized on-resistance vs temperature Figure 12. Normalized V(BR)DSS vs temperature

RDS(on) AM15829v1 AM15831v1

V(BR)DSS
(norm) norm
2.5 1.11 ID =1mA
VGS=10 V
2.3 1.09
2.1
1.07
1.9
1.05
1.7
1.03
1.5
1.3 1.01

1.1 0.99
0.9 0.97
0.7 0.95
0.5 0.93
-50 -25 0 25 50 75 100 125 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C)

DS9703 - Rev 4 page 6/27

 STB10N60M2, STD10N60M2, STP10N60M2
Electrical characteristics (curves)

Figure 13. Source-drain diode forward characteristics Figure 14. Output capacitance stored energy
AM15830v1 AM15832v1
VSD(V) Eoss
(µJ)
1.4

1.2 3
TJ=-50°C
1.0

0.8 2

0.6 TJ=25°C
TJ=150°C
0.4 1

0.2

0.0 0
0 1 2 3 4 5 6 7 ISD(A) 0 100 200 300 400 500 600 VDS(V)

DS9703 - Rev 4 page 7/27

 STB10N60M2, STD10N60M2, STP10N60M2
Test circuits

3 Test circuits

Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 17. Test circuit for inductive load switching and

Figure 18. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 20. Switching time waveform

Figure 19. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD
VGS 90%

AM01472v1 0 10%
AM01473v1

DS9703 - Rev 4 page 8/27

 STB10N60M2, STD10N60M2, STP10N60M2
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 D²PAK (TO-263) type A package information

Figure 21. D²PAK (TO-263) type A package outline

0079457_26

DS9703 - Rev 4 page 9/27

 STB10N60M2, STD10N60M2, STP10N60M2
D²PAK (TO-263) type A package information

Table 8. D²PAK (TO-263) type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.30 8.50 8.70
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°

DS9703 - Rev 4 page 10/27

 STB10N60M2, STD10N60M2, STP10N60M2
D²PAK (TO-263) type A package information

Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm)

12.20

9.75

16.90
2.54
1.60

2.54

5.08

Footprint_26

DS9703 - Rev 4 page 11/27

 STB10N60M2, STD10N60M2, STP10N60M2
DPAK (TO-252) type A package information

4.2 DPAK (TO-252) type A package information

Figure 23. DPAK (TO-252) type A package outline

0068772_A_30

DS9703 - Rev 4 page 12/27

 STB10N60M2, STD10N60M2, STP10N60M2
DPAK (TO-252) type A package information

Table 9. DPAK (TO-252) type A mechanical data

mm
Dim.
Min. Typ. Max.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 4.60 4.70 4.80
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
(L1) 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°

DS9703 - Rev 4 page 13/27

 STB10N60M2, STD10N60M2, STP10N60M2
DPAK (TO-252) type C package information

4.3 DPAK (TO-252) type C package information

Figure 24. DPAK (TO-252) type C package outline

0068772_C_30

DS9703 - Rev 4 page 14/27

 STB10N60M2, STD10N60M2, STP10N60M2
DPAK (TO-252) type C package information

Table 10. DPAK (TO-252) type C mechanical data

mm
Dim.
Min. Typ. Max.

A 2.20 2.30 2.38

A1 0.90 1.01 1.10
A2 0.00 0.10
b 0.72 0.85
b4 5.13 5.33 5.46
c 0.47 0.60
c2 0.47 0.60
D 6.00 6.10 6.20
D1 5.25
E 6.50 6.60 6.70
E1 4.70
e 2.186 2.286 2.386
H 9.80 10.10 10.40
L 1.40 1.50 1.70
L1 2.90 REF
L2 0.90 1.25
L3 0.51 BSC
L4 0.60 0.80 1.00
L6 1.80 BSC
θ1 5° 7° 9°
θ2 5° 7° 9°
V2 0° 8°

DS9703 - Rev 4 page 15/27

 STB10N60M2, STD10N60M2, STP10N60M2
DPAK (TO-252) type E package information

4.4 DPAK (TO-252) type E package information

Figure 25. DPAK (TO-252) type E package outline

0068772_typeE_rev.30

DS9703 - Rev 4 page 16/27

 STB10N60M2, STD10N60M2, STP10N60M2
DPAK (TO-252) type E package information

Table 11. DPAK (TO-252) type E mechanical data

mm
Dim.
Min. Typ. Max.

A 2.18 2.39
A2 0.13
b 0.65 0.884
b4 4.95 5.46
c 0.46 0.61
c2 0.46 0.60
D 5.97 6.22
D1 5.21
E 6.35 6.73
E1 4.32
e 2.286
e1 4.572
H 9.94 10.34
L 1.50 1.78
L1 2.74
L2 0.89 1.27
L4 1.02

DS9703 - Rev 4 page 17/27

 STB10N60M2, STD10N60M2, STP10N60M2
DPAK (TO-252) type E package information

Figure 26. DPAK (TO-252) recommended footprint (dimensions are in mm)

FP_0068772_30

DS9703 - Rev 4 page 18/27

 STB10N60M2, STD10N60M2, STP10N60M2
TO-220 type A package information

4.5 TO-220 type A package information

Figure 27. TO-220 type A package outline

0015988_typeA_Rev_23

DS9703 - Rev 4 page 19/27

 STB10N60M2, STD10N60M2, STP10N60M2
TO-220 type A package information

Table 12. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Slug flatness 0.03 0.10

DS9703 - Rev 4 page 20/27

 STB10N60M2, STD10N60M2, STP10N60M2
D²PAK and DPAK packing information

4.6 D²PAK and DPAK packing information

Figure 28. Tape outline

DS9703 - Rev 4 page 21/27

 STB10N60M2, STD10N60M2, STP10N60M2
D²PAK and DPAK packing information

Figure 29. Reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 13. D²PAK tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS9703 - Rev 4 page 22/27

 STB10N60M2, STD10N60M2, STP10N60M2
D²PAK and DPAK packing information

Table 14. DPAK tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3

DS9703 - Rev 4 page 23/27

 STB10N60M2, STD10N60M2, STP10N60M2
Order codes

5 Order codes

Table 15. Device summary

Order code Marking Package Packing

STB10N60M2 D²PAK
Tape and reel
STD10N60M2 10N60M2 DPAK
STP10N60M2 TO-220 Tube

DS9703 - Rev 4 page 24/27

 STB10N60M2, STD10N60M2, STP10N60M2

Revision history

Table 16. Document revision history

Date Version Changes

29-May-2013 1 First release.

– Added: D²PAK package
– Modified: title and RDS(on) values in cover page
– Modified: RDS(on) values in Table 5
– Modified: RG value in Table 6
06-Dec-2013 2
– Modified: Figure 9 and ID value in Figure 12
– Added: Table 9, 13, Figure 22 and 23
– Updated: Table 10, 11, Figure 24, 25 and 26
Minor text changes.
Updated the title and the description in cover page.
Updated Table 4: "Avalanche characteristics".
Updated Section 4.2: "DPAK (TO-252) type A package information".
08-Mar-2017 3
Added Section 4.4: "DPAK (TO-252) type E package information", and Section 4.7: "IPAK
(TO-251) type C package information".
Minor text changes.
The part number STU10N60M2 have been removed and the document has been updated
accordingly.
Updated Figure 1. Safe operating area for D²PAK and TO-220, Figure 2. Maximum transient
19-Jan-2021 4
thermal impedance for D²PAK and TO-220, Figure 3. Safe operating area for DPAK and
Figure 4. Maximum transient thermal impedance for DPAK.
Minor text changes.

DS9703 - Rev 4 page 25/27

 STB10N60M2, STD10N60M2, STP10N60M2
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.4 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.6 D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25

DS9703 - Rev 4 page 26/27

 STB10N60M2, STD10N60M2, STP10N60M2

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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© 2021 STMicroelectronics – All rights reserved

DS9703 - Rev 4 page 27/27