Small Signal Diode: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode

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1N4148/1N4448/1N914B

500mW High Speed Switching Diode


Small Signal Diode

DO-35 Axial Lead


HERMETICALLY SEALED GLASS

D
Features C
—Fast switching device(Trr<4.0nS)
—Through-hole device type mounting A
—Moisture sensitivity level 1
—Solder hot dip Tin(Sn) lead finish
B
—Pb free version and RoHS compliant
—All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
Unit (mm) Unit (inch)
Dimensions
Mechanical Data Min Max Min Max
—Case : DO-35 package (SOD-27) A 0.45 0.55 0.018 0.022
—High temperature soldering guaranteed : 260°C/10s B 3.05 5.08 0.120 0.200
—Polarity : Indicated by cathode band C 25.4 38.1 1.000 1.500
—Weight : 109 ± 4 mg D 1.53 2.28 0.060 0.090

Ordering Information

Part No. Package Packing


1Nxxxx A0 DO-35 5Kpcs / Ammo
1Nxxxx R0 DO-35 10Kpcs / 14" Reel

Maximum Ratings and Electrical Characteristics


Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings
Type Number Symbol Value Units
Power Dissipation PD 500 mW
Repetitive Peak Reverse Voltage VRRM 100 V
Non-Repetitive Peak Forward Surge Current
IFSM A
Pulse Width 8.3ms 2.0
Non-Repetitive Peak Forward Current IFM 450 mA
Mean Forward Current IO 150 mA
Thermal Resistance (Junction to Ambient) (Note 1) RθJA 240 °C/W
Junction and Storage Temperature Range TJ, TSTG -65 to + 150 °C

Electrical Characteristics
Type Number Symbol Min Max Units
IR=100uA 100
Reverse Breakdown Voltage V(BR) V
IR=5uA 75
Forward Voltage
1N4448, 1N914B IF=5.0mA 0.62 0.72
VF
1N4148 IF=10.0mA 1.0 V
1N4448, 1N914B IF=100.0mA 1.0
VR=20V 25 nA
Reverse Leakage Current IR
VR=75V 5.0 μA
Junction Capacitance VR=0, f=1.0MHz CJ 4.0 pF
Reverse Recovery Time (Note 2) Trr 4.0 ns

Notes:1. Valid provided that electrodes are kept at ambient temperature


Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=60mA, RL=100Ω, IRR=1mA

Version : C09
1N4148/1N4448/1N914B
500mW High Speed Switching Diode
Small Signal Diode

Rating and Sharacteristic Curves

FIG 1 Typical Forward Characteristics FIG 2 Reverse Current vs Reverse Voltage


1 100

Reverse Current (uA)


Forward Current (A)

10 Ta=25°C
0.1

1
Ta=25°C
0.01
0.1

0.001 0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120
Forward Voltage (V) Reverse Voltage (V)

FIG 3 Admissible Power Dissipation Curve FIG 4 Typical Junction Capacitance


500 1.5
Junction Capacitance (pF)
Power Dissipation (mW)

400 1.2

300 0.9

200 0.6

100 0.3

0 0
0 25 50 75 100 125 150 175 200 0 5 10 15 20 25 30
Ambient Temperature (°C) Reverse Voltage (V)

FIG 5 Forward Resistance vs. Forward Current


10000
Dynamic Forward Resistance (Ώ)

1000

100

10

1
0 0 1 10 100
Forward Current (mA)

Version : C09

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