APW7073

Synchronous Buck PWM Controller

Features General Description

• Single 12V Power Supply Required The APW7073 is a voltage mode, synchronous PWM
controller which drives dual N-channel MOSFETs. The
• 0.6V Reference with 1% Accuracy
device integrates all of the control, monitoring and
• Shutdown and Soft-Start Function protecting functions into a single package, provides
• Programmable Frequency Range from 50 kHz to one controlled power output with under-voltage and
1000kHz over-current protections.
• Voltage Mode PWM Control Design The APW7073 provides excellent regulation for output
• Up to 100% Duty Cycle load variation. The internal 0.6V temperature-compensated
reference voltage is designed to meet the requirement
• Under-Voltage Protection (UVP)
of low output voltage applications. The device includes a
• Over-Current Protection (OCP) 200kHz free-running triangle-wave oscillator that is
• SOP-14 Package adjustable from 50kHz to 1000kHz.
• Lead Free and Green Devices Available The APW7073 has been equipped with excellent protec-
tion functions: POR, OCP, and UVP. The Power-On-Re-
(RoHS Compliant)
set (POR) circuit can monitor the VCC, EN, and OCSET
Typical Application Circuit voltage to make sure the supply voltage exceeds their
threshold voltage while the controller is running. The
12V Over-Current Protection (OCP) monitors the output cur-
VIN
ROCSET rent by using the voltage drop across the upper MOSFET’s
RDS(ON). When the output current reaches the trip point, the
RFS
controller will run the soft-start function until the fault
APW7073 L VOUT
events are removed. The Under-Voltage Protection (UVP)
monitors the voltage at FB pin (V FB ) for short-circuit
protection. When the VFB is less than 50% of VREF, the
CSS controller will shutdown the IC directly.

Applications
• Graphic Cards

Ordering and Marking Information

APW7073 Package Code
K : SOP - 14
Operating Ambient Temperature Range
Assembly Material E : -20 to 70° C
Handling Code Handling Code
TR : Tape & Reel
Temperature Range Assembly Material
Package Code L : Lead Free Device G : Halogen and Lead Free Device

APW7073
APW7073 K : XXXXX - Date Code
XXXXX

Note : ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish;
which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-
020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and
halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed
1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

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Rev. A.6 - Oct., 2008
APW7073

Pin Configuration

RT 1 14 VCC
OCSET 2 13 PVCC
SS 3 12 LGATE
COMP 4 SOP-14 11 PGND
FB 5 10 BOOT
EN 6 9 UGATE
GND 7 8 PHASE

Absolute Maximum Ratings (Note 1)

Symbol Parameter Rating Unit

VCC, VPVCC VCC, PVCC to GND -0.3 to +16 V
VBOOT BOOT to PHASE -0.3 to +16 V
UGATE to PHASE <400ns pulse width -5 to VBOOT +5
VUGATE V
>400ns pulse width -0.3 to VBOOT +0.3
LGATE to PGND <400ns pulse width -5 to VPVCC +5
VLGATE V
>400ns pulse width -0.3 to VPVCC +0.3
PHASE to GND <400ns pulse width -10 to +30
VPHASE V
>400ns pulse width -0.3 to 16
VRT, VOCSET RT, OCSET to GND VCC+0.3 V
VFB, VCOMP FB, COMP to GND -0.3 to 7 V
VPGND PGND to GND -0.3 to +0.3 V
TJ Junction Temperature Range -20 to 150 °C
TSTG Storage Temperature -65 to 150 °C
TSDR Maximum Lead Soldering Temperature, 10 Seconds 260 °C
Note 1 : Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

Thermal Characteristics (Note 2)

Symbol Parameter Typical Value Unit

Junction-to-Ambient Thermal Resistance in Free Air
θJA
o
C/W
SOP-14 160
Note2: θJA is measured with the component mounted on a high effective the thermal conductivity test board in free air. The
exposed pad of package is soldered directly on the PCB.

Recommended Operating Conditions

Symbol Parameter Rating Unit
VCC, VPVCC IC Supply Voltage 10.8 to 13.2 V
VIN Converter Input Voltage 2.2 to 13.2 V
VOUT Converter Output Voltage 0.6 to 5 V
IOUT Converter Output Current 0 to 30 A
TA Ambient Temperature Range -20 to 70 °C
TJ Junction Temperature Range -20 to 125 °C

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Rev. A.6 - Oct., 2008
APW7073

Electrical Characteristics
Unless otherwise specified, these specifications apply over VCC=12V, and TA =-20~70°C. Typical values are at TA=25°C.
APW7073
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
INPUT SUPPLY CURRENT
VCC Supply Current (Shutdown Mode) UGATE, LGATE and EN = GND - 0.5 1 mA
ICC
VCC Supply Current UGATE and LGATE Open - 5 10 mA
POWER-ON-RESET
Rising VCC Threshold 9 9.5 10.0 V
Falling VCC Threshold 7.5 8 8.5 V
Rising VOCSET Threshold - 1.3 - V
VOCSET Hysteresis Voltage - 0.1 - V
Rising EN threshold Voltage - 1.3 - V
EN Hysteresis Voltage - 0.1 - V
OSCILLATOR
Accuracy -15 - +15 %
FOSC Free Running Frequency RT = open - 200 - kHz
RT pin: resistor to GND;
Adjustment Range 50 - 1000 kHz
Resistor to VCC
VOSC Ramp Amplitude (nominal 1.35V to 2.95V) - 1.6 - V
Duty Duty Cycle Range 0 - 100 %
REFERENCE
VREF Reference Voltage - 0.60 - V
Reference Voltage Tolerance -1 - +1 %
PWM ERROR AMPLIFIER
Gain Open Loop Gain RL = 10k, CL = 10pF (Note 3) - 88 - dB
GBWP Open Loop Bandwidth RL = 10k, CL = 10pF (Note 3) - 15 - MHz
SR Slew Rate RL = 10k, CL = 10pF (Note 3) - 6 - V/us
FB Input Current VFB = 0.6V - 0.1 1 µA
VCOMP COMP High Voltage - 5.5 - V
VCOMP COMP Low Voltage - 0 - V
ICOMP COMP Source Current VCOMP = 2V - 5 - mA
ICOMP COMP Sink Current VCOMP = 2V - 5 - mA
GATE DRIVERS
IUGATE Upper Gate Source Current VBOOT = 12V, VUGATE -VPHASE = 2V - 2.6 - A
RUGATE Upper Gate Sink Impedance VBOOT = 12V, IUGATE = 0.1A - 1.6 2.4 Ω
ILGATE Lower Gate Source Current VPVCC = 12V, VLGATE = 2V - 4.9 - A
RLGATE Lower Gate Sink Impedance VPVCC = 12V, ILGATE = 0.1A - 1.25 1.88 Ω
TD Dead Time - 20 - nS
PROTECTION
FB Under Voltage Level Percent of VREF 45 50 55 %
IOCSET OCSET Source Current VOCSET = 11.5V 170 200 250 µA
ENABLE/SOFT-START
ISS Soft-Start Charge Current 24 30 36 µA
Note 3 : Guaranteed by design

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Rev. A.6 - Oct., 2008
APW7073

Typical Operating Characteristics

UGATE Source Current vs. UGATE Voltage UGATE Sink Current vs. UGATE Voltage
3.5 3
VBOOT =12V VBOOT =12V
3 VPHASE=0V VPHASE=0V
2.5
UGATE Source Current (A)

UGATE Sink Current (A)

2.5
2
2
1.5
1.5
1
1

0.5
0.5

0 0
0 2 4 6 8 10 12 0 2 4 6 8 10 12
UGATE Voltage (V) UGATE Voltage (V)

LGATE Source Current vs. LGATE Voltage LGATE Sink Current vs. LGATE Voltage
6 3.5

3
5 V PVCC=12V VPVCC=12V
LGATE Source Current (A)

LGATE Sink Current (A)

2.5
4
2
3
1.5

2
1

1 0.5

0 0
0 2 4 6 8 10 12 0 2 4 6 8 10 12
LGATE Voltage (V) LGATE Voltage(V)
Switching Frequency vs.
Reference Voltage vs. Junction Temperature
Junction Temperature
205 0.602

0.601
Switching Frequency(KHz)

200
0.6
Reference Voltage(V)

0.599
195
0.598

190 0.597

0.596
185
0.595

180 0.594
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Junction Temperature (°C) Junction Temperature (°C)

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Rev. A.6 - Oct., 2008
APW7073

Operating Waveforms

Power On Power Off

Vcc =12V, Vin=12V

VOUT =1.5V, L=1uH
Vcc =12V, Vin=12V
VOUT =1.5V, L=1uH

1 1

2 2

3 3

CH1: VCC (5V/div) CH1: VCC (5V/div)

CH2: VSS (2V/div) CH2: VSS (2V/div)
CH3: VOUT (1V/div) CH3: VOUT (1V/div)
Time: 10ms/div Time: 2ms/div

EN (VEN=VCC) Shutdown (VEN=VGND)

Vcc =12V, Vin=12V Vcc =12V, Vin=12V

VOUT =1.5V, L=1uH VOUT =1.5V, L=1uH

1 1

2 2

3 3

CH1: VEN (5V/div) CH1: VEN (5V/div)

CH2: VSS (5V/div) CH2: VSS (5V/div)
CH3: VOUT (1V/div) CH3: VOUT (1V/div)
Time: 10ms/div Time: 10ms/div

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Rev. A.6 - Oct., 2008
APW7073

Operating Waveforms (Cont.)

UGATE Rising UGATE Falling

Vcc =12V, Vin=12V Vcc =12V, Vin=12V

VOUT =1.5V, L=1uH VOUT =1.5V, L=1uH
1 1

2 2

3 3

CH1: VUGATE (20V/div) CH1: VUGATE (20V/div)

CH2: VLGATE (5V/div) CH2: VLGATE (5V/div)
CH3: VPHASE (10V/div) CH3: VPHASE (10V/div)
Time: 50ns/div Time: 50ns/div

Load Transient Response Under Voltage Protection

Vcc =12V, Vin=12V Vcc =12V, Vin=12V

VOUT =1.5V, L=1uH VOUT =1.5V, L=1uH

1 1

4
CH1: VOUT (500mV/div) CH1: VSS (5V/div)
CH4: IOUT (5A/div) CH2: IOUT (5A/div)
Time: 200us/div CH3: VOUT (1V/div)
CH4: VUGATE (10V/div)
Time: 10ms/div

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Rev. A.6 - Oct., 2008
APW7073

Operating Waveforms (Cont.)

Over Current Protection Short Test

Vcc =12V, Vin=12V

1
VOUT =1.5V, L=1uH
1
Vcc =12V, Vin=12V, VOUT =1.5V, L=1uH
R OCSET =1KΩ , R DS(ON)=8mΩ

3 3

4 4
CH1: VSS (5V/div) CH1: VSS (5V/div)
CH2: IL (10A/div) CH2: IL (10A/div)
CH3: VOUT (1V/div) CH3: VOUT (1V/div)
CH4: VUGATE (20V/div) CH4: VUGATE (20V/div)
Time: 10ms/div Time: 10ms/div

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Rev. A.6 - Oct., 2008
APW7073

Function Pin Description

VCC LGATE
Power supply input pin. Connect a nominal 12V power This pin is the gate driver for the lower MOSFET of PWM
supply to this pin. The power-on-reset function monitors output.
the input voltage by this pin. It is recommended that a SS
decoupling capacitor (1 to 10µF) be connected to the
Connect a capacitor to the GND and a 30µA current source
GND for noise decoupling.
charges this capacitor to set the soft-start time.
PVCC
OCSET
This pin provides a supply voltage for the lower gate
This pin serves two functions: a shutdown control and
drive, connect this pin to the VCC pin in normal use.
the setting of over current limit threshold. Pulling this pin
BOOT below 1.3V will shutdown the controller, forcing the
This pin provides the bootstrap voltage to the upper gate UGATE and LGATE signals to be low.
driver for driving the N-channel MOSFET.
A resistor (Rocset) connected between this pin and the
PHASE drain of the high side MOSFET will determine the over
This pin is the return path for the upper gate driver. current limit. An internal 200µA current source will flow
Connect this pin to the upper MOSFET source. This pin through this resistor, creating a voltage drop, which will
is also used to monitor the voltage drop across the be compared with the voltage across the high side
MOSFET for over-current protection. MOSFET. The threshold of the over current limit is
therefore given by:
GND
IOCSET ( 200uA ) × ROCSET
This pin is the signal ground pin. Connect the GND pin IPEAK =
RDS(ON)
to a good ground plane.
EN
PGND
Pull this pin above 1.3V to enable the device and pull
This pin is the power ground pin for the lower gate driver.
this pin below 1.2V to disable the device. In shutdown,
It should be tied to the GND pin on the board.
the SS is discharged and the UGATE and LGATE pins
COMP are held low. Note that don’t leave this pin open.
This pin is the output of PWM error amplifier. It is used to RT
set the compensation components.
This pin allows adjusting the switching frequency.
FB Connect a resistor from RT pin to the ground to increase
This pin is the inverting input of the PWM error amplifier. the switching frequency. Conversely, connect a resistor
It is used to set the output voltage and the compensation from RT to the VCC to decrease the switching frequency.
components. This pin is also monitored for under-
voltage protection. If the FB voltage is under 50% of
reference voltage, the device will be shut down.
UGATE
This pin is the gate driver for the upper MOSFET of PWM
output.

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Rev. A.6 - Oct., 2008
APW7073

Block Diagram
VCC OCSET GND

Power-On-
EN Reset

IOCSET
200µA BOOT

UGATE
ISS
30µA Soft Start O.C.P 15kΩ
Comparator
SS PHASE

50%VREF U.V.P
:2 Comparator

PVCC
PWM
Comparator Gate
Control LGATE
VREF
Error Amp 15kΩ

PGND

Sawtooth
Oscillator
Wave

FB COMP RT

Typical Application Circuit

12V 5.1 1µF

1N4148 VIN
Zener
15V PVCC VCC 1nF
OCSET
NC 2.2 3K 1µF 10µF 10µF 1500µFx2
BOOT
NC
RT 0.1µF

ON 2.2
UGATE
APM2510 APM2510
7.2µH VOUT
EN
PHASE
OFF
SS 1nF
2.2 1µF
0.1µF 2200µFx2
LGATE
APM2556 APM2556 2.2
COMP
10nF PGND
1nF FB
GND

3.3k

8.2k

1.8k
3.3k 10nF

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Rev. A.6 - Oct., 2008
APW7073

Function Description
Power-On-Reset (POR) Voltage

The Power-On-Reset (POR) function of APW7073 continually

monitors the input supply voltage (VCC), the enable (EN)
pin, and OCSET pin. The supply voltage (VCC) must exceed V SS

its rising POR threshold voltage. The voltage at OCSET 4.2V

pin is equal to V IN less a fixed voltage drop (V OCSET =
VIN- VROCSET). EN pin can be pulled high with connecting
a resistor to VCC. The POR function initiates soft-start
operation after VCC, EN, and OCSET voltages exceed V OUT

their POR thresholds. For operation with a single +12V 1.8V

power source, VIN and Vcc are equivalent and the +12V
power source must exceed the rising VCC threshold.
The POR function inhibits operation at disabled status Time
t0 t1 t2
(EN pin low). With both input supplies above their POR
Figure 1. Soft-Start Internal
thresholds, the device initiates a soft-start interval.
Soft-Start/EN Over-Current Protection (monitor upper MOSFET)

The SS/EN pins control the soft-start and enable or The APW7073 monitors the voltage across the upper
disable the controller. Connect a soft-start capacitor MOSFET and uses the OCSET pin to set the over-current
from SS pin to GND to set the soft-start interval. Figure1. trip point.
shows the soft-start interval. When VCC reaches its Power- A resistor (ROCSET) connected between OCSET pin and
On-Reset threshold (9.5V), internal 30µA current source the drain of the upper MOSFET will determine the over
starts to charge the capacitor. When the VSS reaches the current limit. An internal 200µA current source will flow
enabled threshold about 1.8V, the internal 0.6V reference through this resistor, creating a voltage drop, which will
starts to rise and follow the VSS ; the error amplifier be compared with the voltage across the upper MOSFET.
output (VCOMP) suddenly raises to 1.35V, which is the When the voltage across the upper MOSFET exceeds the
valley of the triangle wave of the oscillator, leads the voltage drop across the ROCSET, an over-current will be
VOUT to start-up. Until the VSS reaches about 4.2V, the detected. The threshold of the over current limit is
internal reference completes the soft-start interval and therefore given by:
reaches to 0.6V; and then the VOUT is in regulation. The IOCSET × R OCSET
SS still rises to 5.5V and then stops. ILIMIT =
RDS (ON )
C
TSoft − Start = t 2 − t1 = SS ⋅ 2.4 V For the over-current is never occurred in the normal
ISS
Where: operating load range; the variation of all parameters in
the above equation should be determined.
CSS = external Soft-Start capacitor
ISS = Soft-Start current=30µA - The MOSFET’s RDS(ON) is varied by temperature and
gate to source voltage, the user should determine
the maximum RDS(ON) in manufacturer’s datasheet.
- The minimum IOCSET (170µA) and minimum ROCSET
should be used in the above equation.
- Note that the ILIMIT is the current flow through the
upper MOSFET; ILIMIT must be greater than maximum
output current add the half of inductor ripple current.

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Rev. A.6 - Oct., 2008
APW7073

Function Description (Cont.)

Over-Current Protection (Cont.) 1000

An over current condition will shut down the device and 900

discharge the CSS with a 30µA sink current and then 800

RT Resistance (KΩ)
initiates the soft-start sequence. If the over current condi- 700

tion is not removed during the soft-start interval, the de- 600

vice will be shut down while the over current is detected 500
and the VSS still rises to 4V to complete its cycle. The 400
soft-start function will be cycled until the over current condi- 300
tion is removed. Both over-current protections have the 200
same behavior while an over current condition is 100
detected. 0
10 1000
Under-Voltage Protection Frequency (kHz)

The FB pin is monitored during converter operation by Figure2. Oscillator Frequency vs. RT Resistance
their own Under Voltage (UV) comparator. If the FB 1000
voltage drops below 50% of the reference voltage (50% 900
of 0.6V = 0.3V), a fault signal is internally generated, and 800
RT Resistance (KΩ)

the device turns off both high-side and low-side MOSFET 700
and the converter’s output is latched to be floating. 600
Switching Frequency 500
400
The APW7073 provides the oscillator switching frequency
adjustment. The device includes a 200kHz free-running 300

triangle wave oscillator. If operating in higher frequency 200

than 200kHz, connect a resistor from RT pin to the ground 100

to increase the switching frequency. Conversely, if oper- 0

200 300 400 500 600 700 800 900 1000
ating in lower frequency than 200kHz, connect a resistor
Frequency (kHz)
from RT to the VCC to decrease the switching frequency.
Figure3. Oscillator Frequency vs. RT Resistance
Figure 2. shows how to select the resistor for the desired (High Frequency)
frequency. Figure 3. shows more detail for the higher 1000
frequencies and Figure 4 shows the lower frequency
900
detail.
800
RT Resistance (KΩ)

700

600

500

400

300

200
50 70 90 110 130 150 170

Frequency (kHz)
Figure4. Oscillator Frequency vs. RT Resistance
(Low Frequency)

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Rev. A.6 - Oct., 2008
APW7073

Application Information
Output Voltage Selection Output Capacitor Selection
The output voltage can be programmed with a resistive Higher capacitor value and lower ESR reduce the output
divider. Use 1% or better resistors for the resistive divider ripple and the load transient drop. Therefore, selecting high
is recommended. The FB pin is the inverter input of the performance low ESR capacitors is intended for switch-
error amplifier, and the reference voltage is 0.6V. The ing regulator applications. In some applications, mul-
output voltage is determined by: tiple capacitors have to be parallel to achieve the de-
 R  sired ESR value. A small decoupling capacitor in par-
VOUT = 0.6 × 1 + OUT 
 R GND  allel for bypassing the noise is also recommended, and
the voltage rating of the output capacitors also must
Where ROUT is the resistor connected from VOUT to FB and be considered. If tantalum capacitors are used, make
RGND is the resistor connected from FB to the GND. sure they are surge tested by the manufactures. If in doubt,
consult the capacitors manufacturer.
Output Inductor Selection
Input Capacitor Selection
The inductor value determines the inductor ripple current
and affects the load transient response. Higher inductor The input capacitor is chosen based on the voltage rating
value reduces the inductor’s ripple current and induces and the RMS current rating. For reliable operation, select
lower output ripple voltage. The ripple current and ripple the capacitor voltage rating to be at least 1.3 times higher
voltage can be approximated by: than the maximum input voltage. The maximum RMS
VIN − VOUT VOUT current rating requirement is approximately I OUT/2,
IRIPPLE = × where IOUT is the load current. During power up, the input
FS × L VIN
capacitors have to handle large amount of surge current.
∆VOUT = IRIPPLE × ESR
If tantalum capacitors are used, make sure they are surge
where Fs is the switching frequency of the regulator. tested by the manufactures. If in doubt, consult the
capacitors manufacturer. For high frequency decoupling,
Although increase of the inductor value and frequency
a ceramic capacitor 1µF can be connected between the
reduces the ripple current and voltage, a tradeoff will
drain of upper MOSFET and the source of lower MOSFET.
exist between the inductor’s ripple current and the
regulator load transient response time. MOSFET Selection

A smaller inductor will give the regulator a faster load The selection of the N-channel power MOSFETs are
transient response at the expense of higher ripple current. determined by the RDS(ON), reverse transfer capacitance
Increasing the switching frequency (FS) also reduces the (CRSS) and maximum output current requirement. There
ripple current and voltage, but it will increase the are two components of loss in the MOSFETs: conduction
switching loss of the MOSFET and the power dissipation loss and transition loss. For the upper and lower
of the converter. The maximum ripple current occurs at MOSFET, the losses are approximately given by the fol-
the maximum input voltage. A good starting point is to lowing equations:
choose the ripple current to be approximately 30% of 2
PUPPER = IOUT ( 1+ TC)(RDS(ON))D + (0.5)( IOUT)(VIN)( tSW)FS
the maximum output current. Once the inductance value 2
PLOWER = IOUT (1+ TC)(RDS(ON))(1-D)
has been chosen, select an inductor is capable of carry-
ing the required peak current without going into Where IOUT is the load current
saturation. In some types of inductors, especially core TC is the temperature dependency of RDS(ON)
that is made of ferrite, the ripple current will increase FS is the switching frequency
abruptly when it saturates. This will result in a larger tSW is the switching interval
output ripple voltage. D is the duty cycle

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Rev. A.6 - Oct., 2008
APW7073

Application Information (Cont.)

MOSFET Selection (Cont.) The PWM modulator is shown in Figure 7. The input is
Note that both MOSFETs have conduction loss while the the output of the error amplifier and the output is the
upper MOSFET includes an additional transition loss. PHASE node. The transfer function of the PWM modulator
The switching internal, tSW , is the function of the reverse is given by:
transfer capacitance C RSS. The (1+TC) term is to factor VIN
GAINPWM =
in the temperature dependency of the RDS(ON) and can be ∆VOSC
extracted from the “RDS(ON) vs Temperature” curve of the V IN
power MOSFET. Driver
OSC
PWM Compensation PWM
ΔV OSC Comparator
The output LC filter of a step down converter introduces a
PHASE
double pole, which contributes with -40dB/decade gain Output of
Error Amplifier
slope and 180 degrees phase shift in the control loop. A
compensation network among COMP, FB, and V OUT Driver
should be added. The compensation network is shown in
Figure 8. The output LC filter consists of the output induc- Figure 7. The PWM Modulator
tor and output capacitors. The transfer function of the LC The compensation network is shown in Figure 8. It
filter is given by: provides a close loop transfer function with the highest
1 zero crossover frequency and sufficient phase margin.
FESR =
2 × π × ESR × COUT The transfer function of error amplifier is given by:
The FLC is the double poles of the LC filter, and FESR is the 1  1 
//  R2 + 
VCOMP sC1  sC2 
zero introduced by the ESR of the output capacitor. GAINAMP = =
VOUT  1 
V PHASE L V OUT R1//  R3 + 
 sC3 
 1   1 
s +  ×  s + 
C OUT =
R1 + R3
×
 R2 × C2   (R1 + R3 ) × C3 
R1× R3 × C1  C1 + C2   1 
s s + × s + 
 R2 × C1× C2   R3 × C3 
ESR
The poles and zeros of the transfer function are:
1
Figure 5. The Output LC Filter FZ1 =
2 × π × R2 × C2
FLC 1
FZ2 =
2 × π × (R1 + R3) × C3
-40dB/dec 1
FP1 =
 C1× C2 
2 × π × R2 ×  
 C1 + C2 
GAIN (dB)

1
FESR FP2 =
2 × π × R3 × C3
C1
-20dB/dec
R3 C3 R2 C2

V OUT

R1 FB V COMP
Frequency(Hz)
V REF
Figure 6. The LC Filter GAIN and Frequency Figure 8. Compensation Network

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Rev. A.6 - Oct., 2008
APW7073

Application Information (Cont.)

PWM Compensation (Cont.) The poles and zero of this transfer functions are:
The closed loop gain of the converter can be written as: 1
FLC =
GAINLC X GAINPWM X GAINAMP 2 × π × L × COUT
R1
Figure 9. shows the asymptotic plot of the closed loop R3 =
FS
converter gain, and the following guidelines will help to −1
2 × FLC
design the compensation network. Using the below
1
guidelines should give a compensation similar to the C3 =
π × R3 × FS
curve plotted. A stable closed loop has a -20dB/ decade
slope and a phase margin greater than 45 degree.
1. Choose a value for R1, usually between 1K and 5K.
FZ1 FZ2 FP1 FP2
2. Select the desired zero crossover frequency
FO: (1/5 ~ 1/10) X FS >FO>FESR
GAIN (dB)
Use the following equation to calculate R2: 20log Compensation
∆VOSC FO (R2/R1) Gain
R2 = × × R1 20log
VIN FLC (VIN/ΔVOSC)
3. Place the first zero FZ1 before the output LC filter double
pole frequency FLC.
FLC
FZ1 = 0.75 X FLC FESR Converter
Gain
Calculate the C2 by the equation: PWM & Filter
1 Gain
C2 =
2 × π × R2 × FLC × 0.75 Frequency(Hz)

4. Set the pole at the ESR zero frequency FESR: Figure 9. Converter Gain and Frequency

FP1 = FESR
Calculate the C1 by the equation:
C2
C1 =
2 × π × R2 × C2 × FESR − 1

5. Set the second pole FP2 at the half of the switching

frequency and also set the second zero FZ2 at the output LC
filter double pole FLC. The compensation gain should not
exceed the error amplifier open loop gain, check the
compensation gain at FP2 with the capabilities of the error
amplifier.
FP2 = 0.5 X FS
FZ2 = FLC
Combine the two equations will get the following component
calculations:
1 + s × ESR × COUT
GAINLC = 2
s × L × COUT + s × ESR × COUT + 1

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Rev. A.6 - Oct., 2008
APW7073

Layout Consideration
Layout Consideration the loads. The input capacitor GND should be close
In any high switching frequency converter, a correct layout to the output capacitor GND and the lower MOSFET
is important to ensure proper operation of the regulator. GND.
With power devices switching at 300kHz,the resulting cur- - The drain of the MOSFETs (VIN and PHASE nodes)
rent transient will cause voltage spike across the should be a large plane for heat sinking.
i n t e r c o n n e c t i n g impedance and parasitic circuit
elements. As an example, consider the turn-off transition APW7073
of the PWM MOSFET. Before turn-off, the MOSFET is VIN

carrying the full load current. During turn-off, current VCC

stops flowing in the MOSFET and is free-wheeling by PVCC
the lower MOSFET and parasitic diode. Any parasitic BOOT
inductance of the circuit generates a large voltage spike L
O
during the switching interval. In general, using short and UGATE A
D
wide printed circuit traces should minimize interconnect- PHASE
ing impedances and the magnitude of voltage spike.
LGATE VOUT
And signal and power grounds are to be kept separating
till combined using the ground plane construction or
single point grounding. Figure 10 illustrates the layout, Figure 10. Layout Guidelines
with bold lines indicating high current paths; these
traces must be short and wide. Components along the
bold lines should be placed lose together. Below is a
checklist for your layout:
- Keep the switching nodes (UGATE, LGATE, and
PHASE) away from sensitive small signal nodes
since these nodes are fast moving signals. Therefore,
keep traces to these nodes as short as possible.
- The traces from the gate drivers to the MOSFETs
(UGATE, LGATE) should be short and wide.
- Place the source of the high-side MOSFET and the
drain of the low-side MOSFET as close as possible.
Minimizing the impedance with wide layout plane
between the two pads reduces the voltage bounce of
the node.
- Decoupling capacitor, compensation component,
the resistor dividers, boot capacitors, and SS capacitors
should be close their pins. (For example, place the
decoupling ceramic capacitor near the drain of the
high-side MOSFET as close as possible. The bulk
capacitors are also placed near the drain).
- The input capacitor should be near the drain of the
upper MOSFET; the output capacitor should be near

Copyright  ANPEC Electronics Corp. 15 www.anpec.com.tw

Rev. A.6 - Oct., 2008
APW7073

Package Information
SOP–14

SEE VIEW A

E1
E °

h X 45
e b c
A2

0.25
GAUGE PLANE
A1

SEATING PLANE
L
VIEW A

S SOP-14
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 1.75 0.069
A1 0.10 0.25 0.004 0.010
A2 1.25 0.049
b 0.31 0.51 0.012 0.020
c 0.17 0.25 0.007 0.010
D 8.55 8.75 0.337 0.344
E 5.80 6.20 0.228 0.244
E1 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
0 0° 8° 0° 8°

Note: 1. Follow JEDEC MS-012 AB.

2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

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Rev. A.6 - Oct., 2008
APW7073

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 OD1 B A
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F

330.0±2.00 50 MIN. 16.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.10
-0.00 -0.20
SOP-14 P0 P1 P2 D0 D1 T A0 B0 K0
1.5+0.10 0.6+0.00
4.0±0.10 8.0±0.10 2.0±0.10 -0.00 1.5 MIN. -0.40 6.40±0.20 9.00±0.20 2.10±0.20

(mm)

Devices Per Unit

Package Type Unit Quantity

SOP- 14 Tape & Reel 2500

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Rev. A.6 - Oct., 2008
APW7073

Taping Direction Information

SOP–14

USER DIRECTION OF FEED

Reflow Condition (IR/Convection or VPR Reflow)

TP tp
Critical Zone
TL to TP
Ramp-up

TL
Temperature

tL
Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25°C to Peak
25

Time
Reliability Test Program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles
ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V
Latch-Up JESD 78 10ms, 1tr > 100mA

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Rev. A.6 - Oct., 2008
APW7073

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
- Temperature Max (Tsmax) 150°C 200°C
60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183°C 217°C
- Temperature (TL)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classification Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3 3
Package Thickness Volume mm Volume mm
<350 ≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3 3 3
Package Thickness Volume mm Volume mm Volume mm
<350 350-2000 >2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.

Customer Service

Anpec Electronics Corp.

Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan
Tel : 886-3-5642000
Fax : 886-3-5642050

Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Copyright  ANPEC Electronics Corp. 19 www.anpec.com.tw

Rev. A.6 - Oct., 2008