1

Introduction
Power Electronics is defined as the application of
solid state electronics for the control and conversion
of electric power.
 Power Electronics combines power, electronics
and control.

Fig 1 . Relationship of power electronics to power, electronics and control

2
 Introduction
Power :-Static and rotating power equipment for
the generation,transmiision and distribution of electric
energy.
Electronics:-Solid state devices and circuits for
signal processing to meet the desired control
objectives.
Control :-Steady state and dynamic characteristics
of closed loop systems.

3
 History

Fig 3.History of Power Electronics

4
 Application of Power Electronics
1) Commercial :-Cooking Equipments, Air Conditioners,
Refigeration,Lighting Computers and Office Equipments, Uninterruptible
Power Supply(UPS).
2) Residential :-Cooking Equipments,
Lighting,Heating,Refigeration,Freezers.
3) Industrial :-Pumps,Compressors,Blowers,Welding equipments, Industrial
Lasers, rolling mills, textile mills, excavators.
4) Aerospace :-Space shuttle, power supplies, satellite power supplies,
aircraft power systems.
5) Telecommunications :-Battery Chargers, Power Supplies(DC&UPS),cell
phone chargers.
6) Transportation :-Traction control of electric vehicles, battery chargers for
electric vehicles, electric locomotives, street cars, automobile electronics
including engine controls.

5
6
 Power Semiconductor Devices
 Used as ON/OFF switches in power control circuits

Fig 4.Classifiaction of Power Semiconductor Devices

7
A. Power Diodes
 Two Terminal Device,Annode and Cathode.
 FB when anode is made positive with respect to the cathode.
Diode conducts when the diode voltage >cut-in voltage (0.7 V for Si).
 Small forward voltage across it (0.2-3V)
RB a negligibly small leakage current (uA to mA) flows till reverse breakdown
RB is greater than reverse breakdown voltage, anode current starts rising rapidly.
Hence large power dissipation takes place.

Fig 5 .Diode Symbol and V-I Characteristics

8
Reverse Recovery
 When a diode is switched quickly from forward to reverse bias, it continues to
conduct due to the minority carriers which remains in the p-n junction.
The minority carriers require finite time, i.e, trr (reverse recovery time) to
recombine with opposite charge and neutralise.

Fig 6. Off Characteristics of a Diode

9
Power Diodes Types
 Power diodes can be classified as.
a) General Purpose Diodes
b)High Speed(Fast Recovery) Diodes.
c)Schottky Diodes.
a) General Purpose Diodes
 Large Reverse Recovery Time trr of about 25us
 Used in low speed (frequency) applications. e.g. line commutated converters
 Current ratings less than 1 A to several thousand amps (2000 A)
 Voltage ratings from 50 V to 5 KV.

Fig 6 .Stud type & Hockey Type Diodes 10

b) Fast Recovery Diodes
 Very low Reverse Recovery Time trr < 5us
 Used in free-wheeling ac-dc and dc-ac converter circuits, High Frequency
Switching.
 Current ratings from 1 A to Hundreds of amps .
 Voltage ratings from 50 V to 3 KV.
c) Schottky Diodes
Very low Reverse Recovery Time
Low forward voltage drop.
 Used in low voltage and high current dc power supplies.
 Current ratings from 1 A to 300 A only .
 Voltage ratings are limited to 100V
Operating frequency is high 100-300KHz.

11
B. Thyristors
 Three Terminal Device,Annode ,Cathode and Gate.
 Thyristor conducts when a small gate current is passed through the gate
terminal & provided it is FB.
The Thyristors can be subdivided into different types
Forced-commutated Thyristors (Inverter grade Thyristors)
Line Commutated Thyristors(Converter Grade Thyristors)
Gate-turn off Thyristors(GTO)
Reverse Conducting Thyristors(RCT’s)
Static Induction Thyristors(SITH)
Gate Assisted Turn-off Thyristors(GATT)
Light activated silicon controlled rectifier (LASCR) or Photo SCR’s
MOS-Controlled Thyristors (MCT’s).

12
B. Thyristors
 If the forward breakover voltage (Vbo) is exceeded, the SCR “self-triggers” into
the conducting state.
The presence of gate current will reduce Vbo.
“Normal” conditions for Thyristors to turn on: the device is in forward blocking
state (i.e Vak is positive),a positive gate current (Ig) is applied at the gate
Once conducting, the anode current is latched. Vak collapses to normal forward
volt-drop
In reverse -biased mode, the SCR behaves like a diode.

Fig 7 .SCR Symbol and V-I Characteristics

13
C. Transistors
 Power Transistors- high voltage & high current ratings.
Power transistors used as switching elements, are operated in saturation region
resulting in a low - on state voltage drop.
Switching speed of transistors is much higher than the Thyristors.
 Used in dc-dc and dc-ac converters.
Voltage and current ratings lower than the Thyristors.
Transistors are used in low to medium power applications.
Transistors are current controlled device .
Power transistors are classified as follows
• Bi-Polar Junction Transistors (BJTs) Fig 8. IGBT
• Metal-Oxide Semi-Conductor Field Effect Transistors (MOSFETs)
• Insulated Gate Bi-Polar Transistors (IGBTs)
• Static Induction Transistors (SITs)

14
Power Ratings of Power Semiconductor
Devices
1GW
Thyristor
10MW

10MW GTO/IGCT

1MW

100kW IGBT

10k
W
MOSFET
1kW

100W

10Hz 1kHz 100kHz 1MHz 10MHz

Fig 9. Power and Switching Frequency of Power Semiconductor Devices
15
 Control Characteristics of Power Devices
The power semiconductor devices are used as switches. Depending on power
requirements, ratings, fastness & control circuits for different devices can be
selected. The required outputs obtained by varying conduction time of these
switching devices.

Fig 10. Thyristor Family 16

17
Control Characteristics of Power Devices

Fig 11. Transistor Family

18
 Types of Power Electronic Circuits
Control of electric power supplied to the load or the
equipment/machinery
Conversion of electric power from one form to other
Types of Power Electronic Circuit
1) AC to DC
2) AC to AC
3) DC to DC
4) DC to AC
5) Static Switches

19
1) AC to DC Converters(Rectifiers)
 convert a fixed voltage, fixed frequency AC power supply to obtain a variable DC
output voltage

Fig 12 AC TO DC Converters (Rectifiers)

• Uncontrolled Rectifier
•Controlled Rectifier

Fig 13. A Single Phase Full Wave Uncontrolled Rectifier Circuit

20
(Diode Full Wave Rectifier) using a Center Tapped Transformer.
1) AC to DC Converters(Rectifiers)
•Controlled Rectifier

Fig 14 . A Single Phase Full Wave Controlled Rectifier Circuit (using SCRs)
using a Center Tapped Transformer.
Applications
 Speed control of DC motor in DC drives
 UPS.
HVDC transmission.
 Battery Chargers.
21
2) AC to AC Converters(AC Voltage Controllers/ Cycloconverters)
• AC Voltage Controller
 convert a fixed voltage, fixed frequency AC power supply to obtain a variable AC
output voltage but at same frequency

Fig 15 . AC TO AC Converters or AC regulators.

•Cyclo Converter(Low Output Frequency)

convert a fixed voltage, fixed frequency AC power supply to obtain a variable AC
output voltage and variable frequency

Fig 16 AC Converters with Low Output Frequency or CYCLO CONVERTERS 22

2) AC to AC Converters(AC Voltage Controllers/ Cycloconverters)

Fig 17 A Single Phase AC voltage Controller Circuit (AC-AC Converter using a TRIAC)

Applications
 Speed control of AC motor
 Speed Control of AC Fans
 AC Pumps

23
3) DC to DC Converters(Chopper)
 convert a fixed voltage DC power supply to obtain a variable DC output voltage

Fig 18 CHOPPERS or DC TO DC Converters

Fig 4 CHOPPERS or DC TO DC Converters

Fig 19 A DC Chopper Circuit (DC-DC Converter) using IGBT

Applications
 Speed control of DC motor
 Switched Mode Power Supply(SMPS)
24
4) DC to AC Converters(Inverters)
 convert a fixed voltage DC power supply to obtain a AC output voltage

Fig 20 INVERTERS or DC TO AC Converters

Fig 21 Single Phase DC-AC Converter (Inverter) using MOSFETS

25
4) DC to AC Converters(Inverters)
 M1 & M2 conducts for one Half cycle
 M3 & M4 conducts for another half cycle
Applications
 UPS
 Electric Vehicles

26
 Peripheral Effects
 Power converters work on switching of power semiconductor devices.
Harmonics are produced .
Output Voltage gets distorted
Interference with communication and signaling circuits
 Input and Output Filters are added into the system

Fig 22 A General Power Converter System

27
 Peripheral Effects
 Quality of waveforms are measured by
Total Harmonic Distortion(THD)
Distortion Factor(DF)
Input Power Factor(IPF)
Control strategies plays in harmonics
Remedies
Suitable control strategies are selected.
Input and Output Filters are introduced
Isolation & Grounding

28
 Merits of Power Electronics
 High Efficiency.
High Reliability
 Fast Dynamic Response due to static devices.
Low Power Loss
Less maintenance and Long life
Compact, Less weight, Low Cost

29
 Demerits of Power Electronics
 Harmonics generation.
Low Power Factor
 Electromagnetic Interference.
Large Heat Sinks & Large filters.
Low frequency are bulky and costly.
Simple conversion its costly.
Low overload capacity.

30
31
1
 Introduction
 Used as switches

Conventional Thyristors do not have Gate

Controlled Turn Off characteristics
Gate Turn Off Thyristors(GTO) have both
Controlled turn on and turn off capability
Compared to transistors, thyristors have low
on state conduction losses & higher power
handling capability
Less switching speeds and higher switching
losses than Transistors 2
 Thyristor Characteristics
 Thyristor is a 4 Layer PNPN structure with 3
Junctions
3 Terminal Device:Gate,Anode & Cathode

3
 Thyristor Characteristics


Cross Sectional View of a Thyristor

4
Anode Positive With respect to Cathode
 J1 & J3 Junctions are Forward Biased
J2 is Reverse Biased and a small leakage current
will flow from Anode to Cathode
Thyristor is said to be in OFF state or Forward
Blocking Condition and leakage current is called Off
State current
If Anode to cathode voltage is increased to a large
value J2 will break
This is called Avalanche Breakdown & the
corresponding voltage is Forward Breakdown
Voltage, VBO
5
Anode Positive With respect to Cathode
 J1 & J3 Junctions are already Forward Biased
 Free movement of carriers across all the three
junctions occurs & resulting in a large forward current
Thyristor is said to be in ON state or Conducting
State
The voltage drop is very small typically 1V
Anode current must be greater than latching
current IL to maintain the required amount of carrier
flow across the junction
Otherwise device reverts to the blocking condition
as the VAK is reduced.
6
Anode Positive With respect to Cathode
 Latching Current (IL):- Minimum anode current
required to maintain the thyristor in the on state
immediately after the thyristor is turned ON & Gate
signal has been removed.
Once the thyristor conducts it behaves like a
conducting diode and there is no control over the
device
Device conducts because there is no depletion
layer on the junction J2 due to free movement of
charge carriers.

7
Anode Positive With respect to Cathode
 If forward current is reduced below a holding
current a depletion region develops around J2
due to reduced number of carriers
Thyristor goes to Blocking State
Holding Current (IH):- Minimum anode current
required to maintain the thyristor in the on state
IL> IH

8
Cathode Positive With respect to Cathode
 J1 & J3 Junctions are Reverse Biased
J2 is Forward Biased
It is like two series connected diodes with reverse
voltage across them
Thyristor is in reverse blocking state and a reverse
leakage current, known as reverse current IR flows
through the device .

9
Thyristor can be turned on by increasing Forward
voltage (VAK) beyond VBO.
 Such a turn on could be destructive
In practice the forward voltage is maintained less
than below VBO
Thyristor is turned on by applying a positive voltage
between Gate and Cathode
Once a thyristor is turned on by a gating signal and
its anode current>Holding Current, the device
continues to conduct due to positive feedback, even
if the gate is removed
A thyristor is a latching Device.
10
V-I CHARACTERISTICS
11
 Two Transistor Model of Thyristor
 Thyristorcan be considered as two
complementary transistors
One PNP, Q1 & another NPN, Q2

12
(a) Basic Structure (b) Equivalent Circuit

13
14
 𝑰𝑪𝑩𝑶𝟏 +𝑰𝑪𝑩𝑶𝟐
𝑰𝑨 =
𝟏−(α𝟏+α𝟐)

15
 Two Transistor Model of Thyristor
 α1 varies with emitter current IA=IE

 α2 varies with IK=IA+IG

 If gate current Ig is suddenly increased
 IA also increases
 α1 and α2 increases
So IA increases further
If α1+ α2 =1, IA is very large and thyristor
turns on with a small Gate current
16
17
 Two Transistor Model of Thyristor
 Under transient conditions the capacitances of the
pn junctions influence the characteristics of thyristor
If a thyristor is in a blocking state ,a rapidly rising
voltage applied across the device would cause high
current to flow through the junction capacitance
High values of ICBO1 & ICBO2 may cause α1+ α2 =1
Resulting in undesirable turn on
Large current through the junction capacitors may
also damage the device

18
 Turn on Methods of Thyristor
 Thyristor can be turned on by increasing the
anode current .
Different methods to turn on thyristor are
1.Thermal or High Temperature
2.Light Triggering
3.High Voltage or Forward Voltage Triggering
4.dv/dt triggering
5. Gate current

19
1) Thermal or High Temperature
 Increase in temperature causes increase in
electron hole pairs.
So leakage current increases and this
causes α1 and α2 increases
 α1+ α2 may tend to unity and the thyristor
may be turned on.
This type of turn on causes thermal runaway
& is normally avoided.

20
2) Light Triggering
 If light is allowed to strike the junctions of a
thyristor the electron hole pairs increase & the
thyristor may be turned on.
Light activated thyristors(LASCRs) are
turned on by allowing light to strike the silicon
wafers

21
3) High Voltage(Forward Voltage Triggering
 If the forward anode to cathode voltage is
greater than Forward Breakdown Voltage
(Vak>VBO) sufficient leakage current flows to
initiate the turn on.
This type is destructive and should be
avoided

22
4) dv/dt Triggering
 If the rate of rise of anode to cathode
voltage is high , the charging current of
capacitive junctions may be sufficient enough
to turn on the thyristor.
High value of charging current may damage
the device
Devices must be protected against the high
dv/dt

23
5) Gate Current
 If a thyristor is forward biased ,the injection
of Gate current by applying positive gate
voltage between Gate and cathode terminals
turns on the thyristor.
If gate current is increased the forward
blocking voltage is decreased as shown in
figure

24
25
Thyristor Turn On Characteristics

26
Thyristor Turn On Characteristics

27
Thyristor Turn On Characteristics

28
Designing of Gate control Circuit

29
Thyristor Turn OFF Characteristics

30
Thyristor Turn OFF Characteristics

31
32
33
 THYRISTOR COMMUTATION TECHNIQUES

Natural Commutation
This type of commutation takes place when supply
voltage is AC, because a negative voltage will appear
across the SCR in the negative half cycle of the supply
voltage and the SCR turns off by itself. Hence no special
circuits are required to turn off the SCR. That is the reason
that this type of commutation is called Natural or Line
Commutation

34
This type of commutation is applied in ac voltage controllers,
phase controlled rectifiers and cyclo converters.

35
Forced Commutation
When supply is DC, natural commutation is not possible
because the polarity of the supply remains unchanged.
Hence special methods must be used to reduce the SCR
current below the holding value or to apply a negative
voltage across the SCR for a time interval greater than the
turn off time of the SCR. This technique is called
FORCED COMMUTATION and is applied in all circuits
where the supply voltage is DC – namely Choppers (fixed
DC to variable DC), inverters (DC to AC).

36
Forced commutation techniques are as follows:

37
Self Commutation or Load Commutation or Class A
Commutation: (Commutation By Resonating The Load)

38
39
40
41
42
43
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45
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50
51
52
53
54
55
56
 SINGLE PHASE
SEMICONVERTER
(R-L LOAD)
 INTRODUCTION
 Converter

 Rectifier circuit
Uncontrolled Rectifier circuit

Controlled Rectifier circuit

CLASSIFICATION OF RECTIFIERS
 SEMI CONVERTER
 It is a single quadrant converter.
 It has only one polarity of output
voltage and current.
 Here two SCRs and two diodes are
connected in bridge configuration.
 They can be arranged in two confg.
namely symmetrically & asymmetrical.
Principle of Phase Controlled Rectifier Operation
Single Phase Half-Wave Thyristor Converter with a Resistive
Load
To Derive an Expression for Average (DC) Load Voltage of a Single
Half Wave Controlled Rectifier with RL Load
Single Phase Half Wave Controlled Rectifier with RL Load & Free
Wheeling Diode
Symmetrical configuration of
semiconverter
Asymmetrical configuration of
semiconverter
OPERATION WITH R-L LOAD
 MODE 1
 Here when SCR 1 is turned on.
 OBSERVATION OF MODE 1
 Diode D1 is forward biased,
 Conduction will take place through
SCR1 & D1,
 Load voltage is Vo=Vm sin ωt

 Here inductive load will store the

energy in this mode of operation.
 Flow of power is from source to load.
 MODE 2
 Here at freewheeling occurs.
 OBSERVATION OF MODE 2
 Here AC vltg goes to zero & after ∏ it
becomes negative.
 Hence SCR 1 and diode D1 will turn off.

 Since load is inductive it will try to oppose

the change in current. Flowing through it.
 Self induced voltage is induced.

 This load voltage is negative.

 Hence diode Dfw starts conducting due to

freewheeling.
 MODE 3
 Here at SCR 2 & D 2 is ON.
 OBSERVATION OF MODE 3

Load voltage is positive =

instantaneous voltage.
Supply current is negative.

Hence load voltage & current both

being negative it will store energy.
 MODE 4
 Here at freewheeling occurs.
 OBSERVATION OF MODE 4

 Here AC supply voltage reverses its

polarity & becomes positive.
 Here also hence freewheeling starts
through Dfw.
 Load voltage is zero.

 Supply current is zero.

SUMMARY
 To Derive an Expression
For The DC Output Voltage of A
Single Phase Semi-Converter With
R,L, & E Load & FWD
For Continuous, Ripple Free Load
Current Operation
 
1
vO .d  t 
 
VO dc   Vdc 
t 0

1
 VO dc   Vdc   V sin  t.d  t 
 m


Vm  
VO dc   Vdc    cos  t 
  

Vm
VO dc   Vdc    cos   cos   ; cos   1

Vm
 VO dc   Vdc  1  cos  

Vdc can be varied from a max.
2Vm
value of to 0 by varying  from 0 to  .

For   0, The max. dc o/p voltage obtained is
2Vm
Vdc max   Vdm 

Normalized dc o/p voltage is
Vm
Vdc  
1  cos  
1
Vdcn  Vn    1  cos  
Vdn  2Vm  2
 
  
 1

 2  2
VO RMS     Vm sin  t.d  t  
2 2

 2  
1

 Vm2  2
VO RMS  
 2
 1  cos 2t  .d t 
1
Vm  1  sin 2   2
VO RMS         2 
2  
Single Phase Full Wave
Full Converter
(Fully Controlled Bridge
Converter)
With R,L, & E Load
 iO Constant Load Current
iO=Ia
Ia
t
 
iT1 Ia Ia
& iT2 t
  
iT3 Ia
& iT4 t
  
 To Derive
An Expression For
The Average DC Output Voltage
of a Single Phase Full Converter
assuming
Continuous & Constant Load
Current
The average dc output voltage
can be determined by using the expression
2
1  
VO dc   Vdc    vO .d  t   ;
2  0 
The o/p voltage waveform consists of two o/p
pulses during the input supply time period of
0 to 2 radians. Hence the Average or dc
o/p voltage can be calculated as
  
2  
VO dc   Vdc    Vm sin  t.d  t  
2   
2Vm
  cos t 
 
VO dc   Vdc 
2
2Vm
VO dc   Vdc  cos 

Maximum average dc output voltage is
calculated for a trigger angle   0 0

and is obtained as
2Vm 2Vm
Vdc max   Vdm   cos  0  
 
2Vm
Vdc max   Vdm 

The normalized average output voltage is given by
VO dc  Vdc
Vdcn  Vn  
Vdc max  Vdm
2Vm
cos 
Vdcn  Vn    cos 
2Vm

• During the period from t =  to  the
input voltage vS and the input current iS
are both positive and the power flows
from the supply to the load.
• The converter is said to be operated in
the rectification mode
Controlled Rectifier Operation
for 0 <  < 900
• During the period from t =  to (+),
the input voltage vS is negative and the
input current iS is positive and the output
power becomes negative and there will be
reverse power flow from the load circuit to
the supply.
• The converter is said to be operated in the
inversion mode.
Line Commutated Inverter Operation
for 900 <  < 1800
TWO QUADRANT OPERATION
OF A SINGLE PHASE FULL CONVERTER
0< < 900
Controlled Rectifier Operation

900< <1800
Line Commutated
Inverter Operation
50
TO DERIVE AN
EXPRESSION FOR THE
RMS VALUE OF THE OUTPUT VOLTAGE
The rms value of the output voltage
is calculated as
2
1  2 
VO RMS     vO .d  t  
2  0 
51
The single phase full converter gives two
output voltage pulses during the input supply
time period and hence the single phase full
converter is referred to as a two pulse converter.
The rms output voltage can be calculated as
 
2  
   vO .d  t  
2
VO RMS 
2   
  
1  
   Vm sin  t.d  t  
2 2
VO RMS 
 
 
V 2

   sin  t.d  t  
m 2
VO RMS 
  
V 2 
1  cos 2 t  
.d  t  
  
m
VO RMS 
  2 
   
V  2

   d  t    cos 2 t.d  t  
m
VO RMS 
2    
    
V  2
 sin 2 t  
   t   
m
VO RMS  
2    2   
V 2
  sin 2      sin 2  
          
m
VO RMS 
2   2  

V 2
  sin  2  2   sin 2  
       ;
m
VO RMS 
2   2  
sin  2  2   sin 2
 V   sin 2  sin 2  
2
VO RMS   m
     
2   2 
2 2
V V Vm
VO RMS      0 
m
 m

2 2 2
Vm
VO RMS    VS
2
Hence the rms output voltage is same as the
rms input supply voltage
SINGLE PHASE DUAL CONVERTER
 The average dc output voltage of converter 1 is
2Vm
Vdc1  cos 1

The average dc output voltage of converter 2 is
2Vm
Vdc 2  cos  2

In the dual converter operation one
converter is operated as a controlled rectifier
with  90 & the second converter is
0

operated as a line commutated inverter

in the inversion mode with   90 0

 Vdc1  Vdc 2
2Vm 2Vm 2Vm
cos 1  cos  2    cos  2 
  
 cos 1   cos  2
or
cos  2   cos 1  cos   1 
  2    1  or
1   2    radians
Which gives
 2     1 
To Obtain an Expression
for the
Instantaneous Circulating
Current
• vO1 = Instantaneous o/p voltage of converter 1.
• vO2 = Instantaneous o/p voltage of converter 2.
• The circulating current ir can be determined by
integrating the instantaneous voltage difference
(which is the voltage drop across the circulating
current reactor Lr), starting from t = (2 - 1).
• As the two average output voltages during the
interval t = (+1) to (2 - 1) are equal and
opposite their contribution to the instantaneous
circulating current ir is zero.
 1  t 
ir    vr .d  t   ; vr   vO1  vO 2 
 Lr  2 1  
As the o/p voltage vO 2 is negative
vr   vO1  vO 2 

1  t 
 ir     vO1  vO 2  .d  t   ;
 Lr  2 1  
vO1  Vm sin  t for  2  1  to  t
 Vm  t t 
ir     sin  t.d  t    sin  t.d  t  
 Lr  2 1   2 1  
2Vm
ir   cos  t  cos 1 
 Lr
The instantaneous value of the circulating current
depends on the delay angle.
For trigger angle (delay angle) 1  0,
the magnitude of circulating current becomes min.
when  t  n , n  0, 2, 4,.... & magnitude becomes
max. when  t  n , n  1, 3, 5,....
If the peak load current is I p , one of the
converters that controls the power flow
may carry a peak current of
 4Vm 
 Ip  ,
where   Lr 
Vm
I p  I L max   ,
RL
&
4Vm
ir  max    max. circulating current
 Lr
 THE DUAL CONVERTER
CAN BE OPERATED
IN TWO DIFFERENT MODES OF
OPERATION

 Non-circulating current (circulating current

free) mode of operation.
 Circulating current mode of operation.
NON-CIRCULATING
CURRENT MODE OF OPERATION
 In this mode only one converter is operated
at a time.
 When converter 1 is ON, 0 < 1 < 900

 Vdc is positive and Idc is positive.

 When converter 2 is ON, 0 < 2 < 900

 Vdc is negative and Idc is negative.

CIRCULATING
CURRENT MODE OF OPERATION

 In this mode, both the converters are

switched ON and operated at the same time.
 The trigger angles 1 and 2 are adjusted
such that (1 + 2) = 1800 ; 2 = (1800 - 1).
 When 0 <1 <900, converter 1 operates as a
controlled rectifier and converter 2 operates
as an inverter with 900 <2<1800.
 In this case Vdc and Idc, both are positive.
 When 900 <1 <1800, converter 1 operates
as an Inverter and converter 2 operated as a
controlled rectifier by adjusting its trigger
angle 2 such that 0 <2<900.
 In this case Vdc and Idc, both are negative.
69
 FOUR QUADRANT OPERATION
Conv. 2 Conv. 1
Inverting Rectifying
1 < 900
2 > 900

Conv. 2
Rectifying Conv. 1
2 < 900 Inverting
1 > 900
ADVANTAGES OF CIRCULATING
CURRENT MODE OF OPERATION
 The circulating current maintains continuous
conduction of both the converters over the complete
control range, independent of the load.
 One converter always operates as a rectifier and the
other converter operates as an inverter, the power flow
in either direction at any time is possible.
 As both the converters are in continuous conduction we
obtain faster dynamic response. i.e., the time response
for changing from one quadrant operation to another is
faster.
DISADVANTAGES OF CIRCULATING CURRENT
MODE OF OPERATION
 There is always a circulating current flowing
between the converters.
 When the load current falls to zero, there will be a
circulating current flowing between the converters
so we need to connect circulating current reactors
in order to limit the peak circulating current to
safe level.
 The converter thyristors should be rated to carry a
peak current much greater than the peak load
current.
Half-wave AC phase controller
(Unidirectional Controller)
 SINGLE PHASE FULL WAVE AC VOLTAGE CONTROLLER
(AC REGULATOR) OR RMS VOLTAGE CONTROLLER WITH
RESISTIVE LOAD
 Voltage Control of Single-Phase Inverters

1) Variation of DC input voltage

2) to regulate voltage of inverter
3) to satisfy the constant voltage and frequency control
requirement
• Commonly-used Techniques
– Single-Pulse-Width-Modulation
– Multiple-Pulse-Width-Modulation
– Sinusoidal-Pulse-Width-Modulation
– Modified-Sinusoidal-Pulse-Width-Modulation
– Phase-Displacement Control

29
Single-Pulse-Width-Modulation

30
 One Pulse per Half-Cycle
Pulse Width Controls the Output Voltage

31
 Carrier and Reference Signals

Gate Pulse
Gate Pulse

• Compare the Reference Signal with the Carrier

• Frequency of the Reference Signal determines the
frequency of the Output Voltage
• Modulation Index = M = Ar/Ac
32
Gate Signals and Output

33
rms value of the Output Voltage

1
 
  2

 2 
2
Vo    
2
V d ( t ) 
2
s
 
 2


Vo  Vs

0    180
0  Vo  Vs
34
Fourier Series for the Output Voltage


4Vs n
vo (t )   sin sin nt
n 1,3,5,... n 2

35
Times and angles of the intersections

1 TS
t1   (1  M )
 2
2 TS
t2   (1  M )
 2
Pulse width d (or pulse angle δ)
TS = T/2

d   t2  t1  MTS

36
Multiple-Pulse-Width-Modulation

37
Multiple Pulses per Half-Cycle of
Output Voltage

38
 Gate Signal Generation

• Compare the Reference Signal with the Carrier

• Frequency of the Reference Signal determines the Output
Voltage Frequency
• Frequency of the Carrier determines the number of pulses
per half-cycle
• Modulation Index controls the Output Voltage

39
 Gate Signals and Output Voltage

Number of pulses per half cycle = p = fc/2fo = mf /2

where mf = frequency modulation ratio
40
rms Value of the Output Voltage
1
 ( p  ) / 2  2

2p 
Vo    
2

2
Vs d ( t ) 
 (   ) / 2 
 p 
p
Vo  Vs

0  M 1
T
0 
2p

0 
p
0  Vo  Vs
41
 Fourier Series of the Output Voltage


vo (t )  
n 1,3,5,...
Bn sin nt
2p
4Vs n  3 
Bn   sin sin n( m  4 )  sin n(   m  4 
m 1 n 4
42
 Sinusoidal Pulse-Width Modulation

• In multiple-pulse modulation, all pulses are

the same width
• Vary the pulse width according to the
amplitude of a sine wave evaluated at the
center of the same pulse

43
 Sinusoidal Pulse Modulation
• In this method, several pulses per half cycle are used as in
the case of multiple pulse modulation.
• But width of each pulse is modulated proportional to the
amplitude of sine wave.
• Gate pulses are generated by comparing sinusoidal
reference signal with triangular carrier signal.
• Frequency of reference signal (fr) decides the frequency of
output voltage.
• The ratio of Vr/Vc is called the modulation index which
controls the output voltage.
• Number of pulses per half cycle depends on the carrier
frequency (fc).
Generate the gating signal

2 Reference Signals, vr, -vr

45
 Comparing the carrier and reference signals
• Generate g1 signal by comparison with vr
• Generate g4 signal by comparison with -vr

46
Comparing the carrier and reference signals

47
 rms output voltage

• Depends on the modulation index, M

p 
V V V
2p

 m
o S
 S

m 1

Where δm is the width of the mth pulse

48
 Fourier coefficients of the output voltage

B 
n
2p4V
n
m 1
S
sin
n 
m

4  
sin n  
m
3
4
m

 
 sin n    
m
 
m


4  
n  1, 3, 5,..

49
Current Source Inverters
• CSI has a constant current at its input
terminals.

• Its output current does not depend on load.

• Its output voltage depends on the type of

load.
Voltage Source Current Source
Inverters Inverters

Input voltage is Input current is

constant constant

Output voltage Output current

does not depend does not depend
on load on load

Magnitude of Magnitude of
load current & its load voltage & its
shape depends shape depends
on load on load
Single Phase Current
Source Inverter
 Voltage Control of Single-Phase Inverters

1) Variation of DC input voltage

2) to regulate voltage of inverter
3) to satisfy the constant voltage and frequency control
requirement
• Commonly-used Techniques
– Single-Pulse-Width-Modulation
– Multiple-Pulse-Width-Modulation
– Sinusoidal-Pulse-Width-Modulation
– Modified-Sinusoidal-Pulse-Width-Modulation
– Phase-Displacement Control

1
Sinusoidal-Pulse-Width-Modulation
(Bipolar)
Sinusoidal-Pulse-Width-Modulation
(Unipolar)
Voltage Source Current Source
Inverters Inverters

Input voltage is Input current is

constant constant

Output voltage Output current

does not depend does not depend
on load on load

Magnitude of Magnitude of
load current & its load voltage & its
shape depends shape depends
on load on load
Current Source Inverters
• CSI has a constant current at its input
terminals.

• Its output current does not depend on load.

• Its output voltage depends on the type of

load.