11/9/21, 1:01 PM 🔑M4| Formative Assessment: Electronics Devices & Circuits

🔑M4| Formative Assessment

Due
No due date
Points
15
Questions
15
Time Limit
None
Allowed Attempts
Unlimited

Instructions

Read the questions carefully and answer each correctly. You must have at least 11 correct answers to
unlock the next topic. God bless and enjoy learning...

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KEPT Attempt 3
11 minutes 10 out of 15

LATEST Attempt 12
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Attempt 6
less than 1 minute 1 out of 15

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Attempt 3
11 minutes 10 out of 15

Attempt 2
1 minute 0 out of 15

Attempt 1
22 minutes 5 out of 15

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Submitted Nov 9 at 1pm

Question 1 1
/ 1 pts

Always handle MOSFETs with additional care due to the static electricity
that exists

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in places we might least suspect. Do not remove any shorting mechanism

between the

leads of the device until it is installed.

 
True

 
False

Question 2 1
/ 1 pts

The relationship between the drain current and the gate-to-source voltage
of a JFET is a nonlinear one defined by Shockley’s equation. As the
current level approaches IDSS , the sensitivity of ID to changes in VGS
increases significantly.

 
True

 
False

Question 3 1
/ 1 pts

MOSFETs are available in one of two types: depletion and

_______________ .

enhancement

Question 4 1
/ 1 pts

A current-controlled device is one in which a current defines the operating

conditions

of the device, whereas a voltage-controlled device is one in which a

particular

voltage defines the operating conditions.

 
True

 
False

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Question 5 1
/ 1 pts

The maximum current for a JFET occurs at pinch-off defined by VGS = VP.

 
True

 
False

Question 6 1
/ 1 pts

In a certain FET circuit, VGS = 0 V, VDD = 15 V, IDSS = 15 mA, and RD =

470 Ω. If RD is decreased to 330 Ω, IDSS is

 
15 mA

 
19.5 mA

 
1 mA

 
10.5 mA

Question 7 1
/ 1 pts

The name of the barrier established by depositing a metal on the channel

of a transistor.

Schottky barrier

Question 8 1
/ 1 pts

It is the terminal of an FET analogous to the emitter of a BJT.

source

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Incorrect 0
/ 1 pts
Question 9

It is a type of FET that operates with a reverse-biased pn junction to

control current in a channel. (Acronyms/Symbols are not permitted.)

junction

Incorrect 0
/ 1 pts
Question 10

It is the only type of extrinsic material used for the channel of the FET with
a deposited metal on the channel.

undoping

Incorrect 0
/ 1 pts
Question 11

It is an FET produced by depositing a metal on the channel.

(Acronyms/Symbols are not permitted.)

metal oxide

Incorrect 0
/ 1 pts
Question 12

Generally, it is an FET with no physical channel but with an oxide at the

gate. (Acronyms are not permitted.)

metal oxide

Incorrect
Question 13 0
/ 1 pts

A MOSFET differs from a JFET mainly because

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the JFET has a pn junction.

 
of the power rating.

 
MOSFETs do not have a physical channel.

 
the MOSFET has two gates.

Incorrect
Question 14 0
/ 1 pts

In JFETs, IDSS is

 
the drain current with the source shorted.

 
the midpoint drain current.

 
the maximum possible drain current.

 
the drain current at cutoff.

Question 15 1
/ 1 pts

It is the terminal of an FET analogous to the base of a BJT.

gate

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