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    Mosfet & Igbt: Ee3147 Power Electronics

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    Hoàng Tú
    This document provides information on MOSFETs and IGBTs. It describes their structure, operating characteristics such as turn-on and turn-off conditions, and important parameters. These include threshold voltage, conduction loss, switching loss, parasitic capacitances, and gate drive design considerations. Snubber circuits and gate drive circuits are also discussed. Key aspects like extracting parameters from datasheets and choosing between MOSFETs and IGBTs are highlighted.

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    Mosfet & Igbt: Ee3147 Power Electronics

    Uploaded by

    Hoàng Tú
    59 views16 pages
    This document provides information on MOSFETs and IGBTs. It describes their structure, operating characteristics such as turn-on and turn-off conditions, and important parameters. These include threshold voltage, conduction loss, switching loss, parasitic capacitances, and gate drive design considerations. Snubber circuits and gate drive circuits are also discussed. Key aspects like extracting parameters from datasheets and choosing between MOSFETs and IGBTs are highlighted.

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    Lecture 4 - MOSFET & IGBT

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    This document provides information on MOSFETs and IGBTs. It describes their structure, operating characteristics such as turn-on and turn-off conditions, and important parameters. These include threshold voltage, conduction loss, switching loss, parasitic capacitances, and gate drive design considerations. Snubber circuits and gate drive circuits are also discussed. Key aspects like extracting parameters from datasheets and choosing between MOSFETs and IGBTs are highlighted.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    59 views16 pages

    Mosfet & Igbt: Ee3147 Power Electronics

    Uploaded by

    Hoàng Tú
    This document provides information on MOSFETs and IGBTs. It describes their structure, operating characteristics such as turn-on and turn-off conditions, and important parameters. These include threshold voltage, conduction loss, switching loss, parasitic capacitances, and gate drive design considerations. Snubber circuits and gate drive circuits are also discussed. Key aspects like extracting parameters from datasheets and choosing between MOSFETs and IGBTs are highlighted.

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    EE3147 POWER ELECTRONICS

    MOSFET & IGBT


    MOSFET
    • MOSFET = Metal Oxide Semiconductor
    Field Effect Transistor
    • Turn-ON condition:
    𝑉𝑔𝑠 > 𝑉𝑔𝑠,𝑡ℎ IPW60R017C7
    • Turn-OFF condition:
    𝑉𝑔𝑠 > 𝑉𝑔𝑠,𝑡ℎ
    Saturation
    region

    N-Channel P-Channel N-Channel P-Channel


    Structure Symbol I-V Characteristics
    MOSFET: static characteristics
    • Ohmic region → MOSFET ≡ (dynamic) resistor
    • 𝑅𝑑𝑠,𝑂𝑁 depends on Gate voltage, Temp., and Drain current
    • Conduction loss:
    2
    Δ𝑃𝑐𝑜𝑛𝑑 = 𝑅𝑑𝑠,𝑂𝑁 𝐼𝑑𝑠,𝑅𝑀𝑆

    NTBL070N65S3-D

    NTBL070N65S3-D

    Rds,ON versus Drain current Rds,ON versus Temperature


    and Gate voltage
    MOSFET: Switching characteristics
    • Important parameters
    • 𝑉𝑔𝑠,𝑡ℎ [V] : Threshold voltage
    • 𝑉𝑔𝑠,𝑝𝑙 [V] : Plateau voltage
    • 𝑡𝑑,𝑂𝑁 [ns] : Turn-ON delay
    • 𝑡𝑟 [ns] : Rise time
    • 𝑡𝑑,𝑂𝐹𝐹 [ns] : Turn-OFF delay
    Turn-ON process
    • 𝑡𝑓 [ns] : Fall time

    Simplified switching waveform Turn-OFF process


    MOSFET: Hard- vs Soft-Switching
    • Switching loss due to
    overlapping of voltage and
    current
    1
    Δ𝑃𝑠𝑤,𝑜𝑛 = 𝑉𝐷𝑆 𝐼𝐷 𝑡𝑟𝑖 + 𝑡𝑓𝑢 𝑓𝑠𝑤 (W)
    2
    1
    Δ𝑃𝑠𝑤,𝑜𝑓𝑓 = 𝑉𝐷𝑆 𝐼𝐷 𝑡𝑟𝑢 + 𝑡𝑓𝑖 𝑓𝑠𝑤 (W) Hard-switching waveform
    2
    • If 𝑉𝐷𝑆 = 0 before turning-on →
    Zero-Voltage Switching (ZVS)
    • If 𝐼𝐷 = 0 before turning-off →
    Zero-Current Switching (ZCS)

    Soft-switching waveform
    MOSFET: parasitics
    • Parasitics capacitance (given in datasheet)
    • Feedback Capacitance 𝐶𝑟𝑠𝑠 = 𝐶𝑔𝑑
    • Input Capacitance 𝐶𝑖𝑠𝑠 = 𝐶𝑔𝑠 + 𝐶𝑔𝑑 (almost constant)
    • Output Capacitance 𝐶𝑜𝑠𝑠 = 𝐶𝑑𝑠 + 𝐶𝑔𝑑 (highly nonlinear)

    • Stray inductance (due to packaging) → 1 inch length ~ 22 nH


    • Effect:
    • Crosstalk or Miller turn-on or Self turn-on
    • Voltage and current spikes
    • More switching loss and EMI noise

    Typical voltage spike at turn-off Equivalent circuit of MOSFET


    MOSFET: Gate drive circuit
    • Two main types of drivers: isolated and nonisolated

    Transformer-based driver Isolated driver IC Non-isolated driver


    • Isolated • Expensive • Cheap
    • Low cost • Short propagation delay • Compact
    • Reliable • Low dV/dt immunity • Non isolated → required
    • Short propagation delay • Required isolated PSU an isolation stage
    • High parasitic capacitor • Suitable for high voltage • High propagation delay
    • Bulky applications • Small parasitic cap.
    • Overshoot • Bootstrap can be used at • Required a bootstrap
    • Narrow duty cycle range low voltage circuit
    • Suitable for low voltage
    applications
    MOSFET: Gate drive design
    • Key parameters:
    • 𝑅𝑔 [Ω] : Gate resistor
    • 𝑉𝐺𝑆 [V] : Gate drive voltage
    • 𝑄𝑔 [nC] : Gate charge
    • Simplified key equations:
    • Gate resistance [Ω]
    𝑉𝐺𝑆
    𝑅𝑔 = − 𝑅𝑔,𝑖𝑛𝑡 − 𝑅𝑑𝑟𝑣 Gate current path during turn-on
    𝐼𝑔
    • Gate power loss
    2
    𝑉𝐺𝑆
    Δ𝑃𝑔 = 𝑡 𝑓
    𝑅𝑔,𝑡𝑜𝑡 𝑔 𝑠𝑤
    • Gate current
    𝑄𝑔
    𝐼𝑔 =
    𝑡𝑔

    Gate charge Gate current path during turn-off


    IGBT
    • IGBT = Insulated Gate Bipolar Transistor
    • Turn-ON condition:
    𝑉𝑔𝑒 > 𝑉𝑔𝑒,𝑡ℎ CM600HA-5F

    • Turn-OFF condition:
    𝑉𝑔𝑒 > 𝑉𝑔𝑒,𝑡ℎ

    Volt-ampere characteristics

    Structure Symbol Equivalent circuit


    IGBT: static characteristics
    • Voltage drop on Collector – Emitter channel:
    𝑉𝑐𝑒 = 𝑉𝑐𝑒0 + 𝑅𝑐𝑒 𝐼𝑐
    • Conduction loss: Δ𝑃𝑐𝑜𝑛𝑑 = 𝑉𝑐𝑒0 𝐼𝑐,𝑎𝑣𝑔 + 𝑅𝑐𝑒 𝐼𝑐,𝑟𝑚𝑠
    2

    IXGH50N120C3

    Δ𝐼𝑐𝑒
    Δ𝑉𝑐𝑒
    𝑅𝑐𝑒 ≈
    Δ𝐼𝑐𝑒
    Δ𝑉𝑐𝑒
    𝑉𝑐𝑒0

    Desat circuit for overcurrent/short


    Volt-Ampere characteristics at 25oC circuit protection
    https://www.ti.com/lit/ml/slyp764/slyp764.pdf?ts=1634664448993&ref_url=https%253A%252F%252Fwww.google.com%252F
    IGBT: Switching characteristics
    • Important parameters
    • 𝑡𝑑,𝑂𝑁 [ns] : Turn-ON delay
    • 𝑡𝑟 [ns] : Rise time
    • 𝑡𝑑,𝑂𝐹𝐹 [ns] : Turn-OFF delay
    • 𝑡𝑓 [ns] : Fall time
    • 𝐸𝑜𝑛 [mJ] : Turn-ON energy
    • 𝐸𝑜𝑓𝑓 [mJ] : Turn-OFF energy

    Voltage turn-on and turn-off waveforms


    (*)https://www.st.com/resource/en/application_note/dm00122
    Double pulse test circuit 161-igbt-datasheet-tutorial-stmicroelectronics.pdf
    IGBT: parasitics
    • Parasitics capacitance (given in datasheet)
    • Feedback Capacitance 𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐
    • Input Capacitance 𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑒 + 𝐶𝑔𝑐 (almost constant)
    • Output Capacitance 𝐶𝑜𝑒𝑠 = 𝐶𝑐𝑒 + 𝐶𝑔𝑐 (highly nonlinear)

    • Stray inductance (due to packaging) → 1 inch length ~ 22 nH


    • Effect:
    • Crosstalk or Miller turn-on or Self turn-on
    • Voltage and current spikes
    • More switching loss and EMI noise

    • Workaround:
    • RC/RCD snubber
    • Miller-clamp driver
    • Negative bias

    Equivalent circuit with parasitics


    IGBT: Gate drive circuit
    • Similar to MOSFET gate drive circuit
    • Typical gate drive voltage
    Si MOSFET SiC MOSFET GaN FET IGBT
    0~12 V -5 ~ 20 V -2 ~ 6 V -5 ~ 15 V

    • Typical gate drive circuit design

    Typical IGBT drive circuit with soft-shutdown


    MOSFET & IGBT: remaining questions
    • Connecting in parallel?
    • Design of snubber circuit?
    • Effect of gate resistance on dynamic performance?
    • Design of DESAT circuit?
    • Design of gate drive circuit?
    • Extract parameters from datasheet?
    • How to achieve ZVS? ZCS? Or both?
    • What to choose? IGBT or MOSFET?
    Summary
    • Discriminate semiconductor devices
    • Working principle of Diode, Thyristor, MOSFET
    and IGBT
    • Understanding the effect of parasitic components
    • Basic parameters of devices
    • Calculate the conduction loss and switching loss
    • Calculate the temperature rise of devices
    • Basic gate drive circuit design
    THANKS
    FOR
    ATTENTIONS

    10/20/2021 49

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