STP5NK80Z

STP5NK80ZFP
N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP
Zener-protected SuperMESH™ Power MOSFET

General features

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VDSS
Type RDS(on) ID
(@Tjmax)
STP5NK80Z 800 V < 2.4 Ω 4.3 A
STP5NK80ZFP 800 V < 2.4 Ω 4.3 A
3
■ 100% avalanche tested 1
2

■ Gate charge minimized TO-220 TO-220FP

■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility

Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established Internal schematic diagram
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
STP5NK80Z P5NK80Z TO-220 Tube
STP5NK80ZFP P5NK80ZFP TO-220FP Tube

August 2006 Rev 4 1/15

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 Contents STP5NK80Z - STP5NK80ZFP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7

3
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Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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 STP5NK80Z - STP5NK80ZFP Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

TO-220 TO-220FP

VDS Drain-source voltage (VGS = 0) 800 V

VGS Gate-source voltage ± 30 V
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ID Drain current (continuous) at TC = 25°C 4.3 4.3 (1) A

ID Drain current (continuous) at TC=100°C 2.7 2.7 (1) A

IDM(2) Drain current (pulsed) 17.2 17.2 (1) A

PTOT Total dissipation at TC = 25°C 110 30 W

Derating factor 0.88 0.24 W/°C
Gate source ESD
VESD(G-S) 3500 V
(HBM-C=100pF, R=1.5ΚΩ)
dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand voltage (RMS) from all
VISO three leads to external heat sink - 2500 V
(t=1s; Tc= 25°C)
TJ Operating junction temperature
-55 to 150 °C
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤4.3A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Table 2. Thermal data

Symbol Parameter Value Unit

TO-220 TO-220FP

Rthj-case Thermal resistance junction-case max 1.14 4.2 °C/W

Rthj-a Thermal resistance junction-ambient max 62.5 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

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 Electrical ratings STP5NK80Z - STP5NK80ZFP

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAR 4.3 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 190 mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)

Table 4. Gate-source zener diode

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Symbol Parameter Test conditions Min. Typ. Max. Unit

BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V

1.1 Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

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 STP5NK80Z - STP5NK80ZFP Electrical characteristics

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1mA, VGS= 0 800 V
voltage

www.DataSheet4U.com VDS = Max rating,

Zero gate voltage drain 1 µA
IDSS VDS = Max rating,
current (VGS = 0) 50 µA
Tc = 125°C
Gate body leakage current
IGSS VGS = ± 20V ±10 µA
(VGS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 100µA 3 3.75 4.5 V
Static drain-source on
RDS(on) VGS = 10V, ID = 2.15 A 1.9 2.4 Ω
resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =15V, ID = 2.15A 4.25 S

Input capacitance
Ciss 910 pF
Output capacitance
Coss VDS =25V, f=1 MHz, VGS=0 98 pF
Reverse transfer
Crss 20 pF
capacitance
Equivalent output
Cosseq(2). VGS=0, VDS =0V to 400V 40 pF
capacitance
td(on) Turn-on delay time 18 ns
VDD=400 V, ID= 2 A,
tr Rise time 25 ns
RG=4.7Ω, VGS=10V
td(off) Turn-on delay time 45 ns
(see Figure 18)
tr fall time 30 ns
Qg Total gate charge 32.4 45.5 nC
VDD=640V, ID = 4.3A
Qgs Gate-source charge 5 nC
VGS =10V
Qgd Gate-drain charge 18.5 nC
Off-voltage rise time VDD=640 V, ID= 4.3 A, 22 ns
td(Voff)
Fall time RG=4.7Ω, VGS=10V 10 ns
tr
Cross-over time (see Figure 20) 32 ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS

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 Electrical characteristics STP5NK80Z - STP5NK80ZFP

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 4.3 A

(1)
ISDM Source-drain current (pulsed) 17.2 A
VSD (2) Forward on voltage ISD= 4.3 A, VGS=0 1.6 V
ISD= 4.3 A,
trr Reverse recovery time 500 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 3 µC
VDD=40 V, Tj = 150°C
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IRRM Reverse recovery current 12 A
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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 STP5NK80Z - STP5NK80ZFP Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

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Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
(HV11720)

Figure 5. Output characterisics Figure 6. Transfer characteristics

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 Electrical characteristics STP5NK80Z - STP5NK80ZFP

Figure 7. Transconductance Figure 8. Static drain-source on resistance

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Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations

Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature

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 STP5NK80Z - STP5NK80ZFP Electrical characteristics

Figure 13. Source-drain diode forward Figure 14. Normalized BVdss vs temperature
characteristics

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Figure 15. Avalanche energy vs temperature

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 Test circuit STP5NK80Z - STP5NK80ZFP

3 Test circuit

Figure 16. Unclamped Inductive load test Figure 17. Unclamped Inductive waveform
circuit

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Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit
resistive load

Figure 20. Test circuit for inductive load

switching and diode recovery times

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 STP5NK80Z - STP5NK80ZFP Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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 Package mechanical data STP5NK80Z - STP5NK80ZFP

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
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D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

G1

G
H

F2

1 2 3
L5
L2 L4

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 STP5NK80Z - STP5NK80ZFP Package mechanical data

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
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E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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 Revision history STP5NK80Z - STP5NK80ZFP

5 Revision history

Table 8. Revision history

Date Revision Changes

09-Sep-2004 2 Preliminary version

06-Sep-2005 3 Final version
16-Aug-2006 4 New template, no content change
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 STP5NK80Z - STP5NK80ZFP

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