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    Experiment 7 PN Junction

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    Drogar
    This experiment aims to draw the I-V characteristic curve of a p-n junction diode in both forward and reverse bias. The apparatus needed is a p-n junction diode. In forward bias, the current increases slowly at first as the voltage increases, then rapidly increases at or above the cut-in or threshold voltage. In reverse bias, the current remains small as the voltage increases until the reverse breakdown voltage is reached, at which point the current suddenly increases greatly. The procedure details taking voltage and current readings in both bias configurations to obtain the I-V curves.

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    © All Rights Reserved
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    Experiment 7 PN Junction

    Uploaded by

    Drogar
    175 views4 pages
    This experiment aims to draw the I-V characteristic curve of a p-n junction diode in both forward and reverse bias. The apparatus needed is a p-n junction diode. In forward bias, the current increases slowly at first as the voltage increases, then rapidly increases at or above the cut-in or threshold voltage. In reverse bias, the current remains small as the voltage increases until the reverse breakdown voltage is reached, at which point the current suddenly increases greatly. The procedure details taking voltage and current readings in both bias configurations to obtain the I-V curves.

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    Experiment 7 Pn Junction

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    This experiment aims to draw the I-V characteristic curve of a p-n junction diode in both forward and reverse bias. The apparatus needed is a p-n junction diode. In forward bias, the current increases slowly at first as the voltage increases, then rapidly increases at or above the cut-in or threshold voltage. In reverse bias, the current remains small as the voltage increases until the reverse breakdown voltage is reached, at which point the current suddenly increases greatly. The procedure details taking voltage and current readings in both bias configurations to obtain the I-V curves.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    175 views4 pages

    Experiment 7 PN Junction

    Uploaded by

    Drogar
    This experiment aims to draw the I-V characteristic curve of a p-n junction diode in both forward and reverse bias. The apparatus needed is a p-n junction diode. In forward bias, the current increases slowly at first as the voltage increases, then rapidly increases at or above the cut-in or threshold voltage. In reverse bias, the current remains small as the voltage increases until the reverse breakdown voltage is reached, at which point the current suddenly increases greatly. The procedure details taking voltage and current readings in both bias configurations to obtain the I-V curves.

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    Physics Class 12

    Experiment 7
    Aim
    To draw the I-V characteristic curve of a p-n junction in forward bias and
    reverse
    bias.
    Apparatus
    A p-n junction (semi-conductor) diode apparatus.

    Theory
    Forward bias characteristics. When the p -section of the diode is
    connected to positive terminal of a battery and n-section is connected to
    negative terminal of the battery then junction is said to be forward
    biased. With increase in bias voltage, the forward current increases
    slowly in the beginning and then rapidly. At about 0.7 V for Si diode (0.2
    V for Ge), the current increases suddenly. The value of forward bias
    voltage, at which the forward current increases rapidly, is called cut in
    voltage or threshold voltage.
    Reverse bias characteristics. When the p -section of the diode is
    connected to negative terminal of high voltage battery and n-section of
    the diode is connected to positive terminal of the same battery, then
    junction is said to be reverse biased.
    When reverse bias voltage increases, initially there is a very small reverse
    current flow, which remains almost constant with bias. But when reverse
    bias voltage increases to sufficiently high value, the reverse current
    suddenly increases to a large value. This voltage at which breakdown of
    junction diode occurs (suddenly large current flow) is called zener
    breakdown voltage or inverse voltage. The breakdown voltage may^tarts
    from one volt to several hundred volts, depending upon dopant density
    and the depletion layer.

    Diagram
    Procedure

    For forward-bias

    1. Make circuit diagram as shown in diagram.


    2. Note least count and zero error of voltmeter (V) and milli-ammeter
    (mA).
    3. Increase the forward-bias voltage upto 0.3 V for Ge diode. Current
    remains zero, (It is due to junction potential barrier of 0.3 V).
    4. Increase VF to 0.4 V. Milli-ammeter records a small current.
    5. Increase VF in steps and note the corresponding current. Current
    increases first slowly and then rapidly
    6. Record your observations.

    For reverse-bias

    7. Make circuit diagram as shown in diagram.


    8. Note least count and zero error of voltmeter (V) and micro-
    ammeter (μA).
    9. Increase VR in steps of 0.2 V. Current increases first slowly and then
    rapidly. Note the current.
    10. Record your observations..

    Observations

    Forward bias

    Reverse bias

    Calculations

    Result

    Precautions
    1. All connections should be neat, clean and tight.
    2. Key should be used in circuit and opened when the circuit is not
    being used.
    3. Forward-bias voltage beyond breakdown should not be applied.
    4. Reverse-bias voltage beyond breakdown should not be applied.

    Sources of error
    The junction diode supplied may be faulty.

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