Data Sheet No.

PD60195-D

IR2010(S) & (PbF)

Features HIGH AND LOW SIDE DRIVER
• Floating channel designed for bootstrap operation Product Summary
Fully operational to 200V
Tolerant to negative transient voltage, dV/dt immune VOFFSET 200V max.
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible IO+/- 3.0A / 3.0A typ.
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset VOUT 10 - 20V
• CMOS Schmitt-triggered inputs with pull-down
• Shut down input turns off both channels
ton/off 95 & 65 ns typ.
• Matched propagation delay for both channels
• Outputs in phase with inputs
• Also available LEAD-FREE
Delay Matching 15 ns max.

Applications Packages
• Audio Class D amplifiers
• High power DC-DC SMPS converters
• Other high frequency applications
Description
The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT
drivers with independent high and low side referenced output channels, ideal for Audio 14-Lead PDIP
Class D and DC-DC converter applications. Logic inputs are compatible with standard
CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation de-
lays are matched to simplify use in high frequency applications. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the high side configura-
tion which operates up to 200 volts. Proprietary HVIC and latch immune CMOS tech-
16-Lead SOIC
nologies enable ruggedized monolithic construction.

Typical Connection 


  


 

  


  
  
 

(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com 1
IR2010(S) & (PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.

Symbol Definition Min. Max. Units

VB High side floating supply voltage -0.3 225
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side fixed supply voltage -0.3 25 V
VLO Low side output voltage -0.3 VCC + 0.3
VDD Logic supply voltage -0.3 VSS + 25
VSS Logic supply offset voltage VCC - 25 VCC + 0.3
VIN Logic input voltage (HIN, LIN & SD) VSS - 0.3 VDD + 0.3
dVs/dt Allowable offset supply voltage transient (figure 2) — 50 V/ns
PD Package power dissipation @ TA ≤ +25°C (14 lead DIP) — 1.6
W
(16 lead SOIC) — 1.25
RTHJA Thermal resistance, junction to ambient (14 lead DIP) — 75
°C/W
(16 lead SOIC) — 100
TJ Junction temperature — 150
TS Storage temperature -55 150 °C
TL Lead temperature (soldering, 10 seconds) — 300

Recommended Operating Conditions

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in figures 24 and 25.
Symbol Definition Min. Max. Units
VB High side floating supply absolute voltage VS + 10 VS + 20
VS High side floating supply offset voltage Note 1 200
VHO High side floating output voltage VS VB
VCC Low side fixed supply voltage 10 20
V
VLO Low side output voltage 0 VCC
VDD Logic supply voltage VSS + 3 VSS + 20
VSS Logic supply offset voltage -5 (Note 2) 5
VIN Logic input voltage (HIN, LIN & SD) VSS VDD
TA Ambient temperature -40 125 °C

Note 1: Logic operational for VS of -4 to +200V. Logic state held for VS of -4V to -VBS.
Note 2: When VDD < 5V, the minimum VSS offset is limited to -VDD.
(Please refer to the Design Tip DT97-3 for more details).

2 www.irf.com
 IR2010(S) & (PbF)

Dynamic Electrical Characteristics

VBIAS (VCC, VBS, VDD) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.

Symbol Definition Figure Min. Typ. Max. Units Test Conditions

ton Turn-on propagation delay 7 50 95 135 VS = 0V
toff Turn-off propagation delay 8 30 65 105 VS = 200V
tsd Shutdown propagation delay 9 35 70 105 VS = 200V
ns
tr Turn-on rise time 10 — 10 20
tf Turn-off fall time 11 — 15 25
MT Delay matching, HS & LS turn-on/off 6 — — 15

Static Electrical Characteristics

VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters
are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.

Symbol Definition Figure Min. Typ. Max. Units Test Conditions

VIH Logic “1” input voltage 12 9.5 — —
VDD = 15V
VIL Logic “0” input voltage 13 — — 6.0
VIH Logic “1” input voltage 12 2 — —
VDD = 3.3V
VIL Logic “0” input voltage 13 — — 1 V

VOH High level output voltage, VBIAS - VO 14 — — 1.0 IO = 0A

VOL Low level output voltage, VO 15 — — 0.1 IO = 0A
ILK Offset supply leakage current 16 — — 50 VB=VS = 200V
IQBS Quiescent VBS supply current 17 — 70 210 VIN = 0V or VDD
IQCC Quiescent VCC supply current 18 — 100 230 VIN = 0V or VDD
µA
IQDD Quiescent VDD supply current 19 — 1 5 VIN = 0V or VDD
IIN+ Logic “1” input bias current 20 — 20 40 VIN = VDD
IIN- Logic “0” input bias current 21 — — 1.0 VIN = 0V
VBSUV+ VBS supply undervoltage positive going 22 7.5 8.6 9.7
threshold
VBSUV- VBS supply undervoltage negative going 23 7.0 8.2 9.4 V
threshold
VCCUV+ VCC supply undervoltage positive going 24 7.5 8.6 9.7
threshold
VCCUV- VCC supply undervoltage negative going 25 7.0 8.2 9.4
threshold
IO+ Output high short circuit pulsed current 26 2.5 3.0 — VO = 0V, VIN = VDD
PW ≤ 10 µs
A
IO- Output low short circuit pulsed current 27 2.5 3.0 — VO = 15V, VIN = 0V
PW ≤ 10 µs

www.irf.com 3
IR2010(S) & (PbF)
Functional Block Diagram



 
  



   

 

 





 
  





 

Lead Definitions
Symbol Description
VDD Logic supply
HIN Logic input for high side gate driver output (HO), in phase
SD Logic input for shutdown
LIN Logic input for low side gate driver output (LO), in phase
VSS Logic ground
VB High side floating supply
HO High side gate drive output
VS High side floating supply return
VCC Low side supply
LO Low side gate drive output
COM Low side return

Lead Assignments

14 Lead PDIP 16 Lead SOIC (Wide Body)

IR2010 IR2010S
Part Number

4 www.irf.com
 IR2010(S) & (PbF)

HV =10 to 200V

HIN
LIN

SD
<50 V/ns

HO
LO

Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit

  


(0 to 200V)
   

 


  

Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition

  



 


!" 

   






Figure 5. Shutdown Waveform Definitions Figure 6. Delay Matching Waveform Definitions

www.irf.com 5
IR2010(S) & (PbF)

250 250

200 m ax 200

Turn-on Time (nS)

Turn-on Time (nS)

m ax
150 150

typ
100 100
typ

50 50

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (C) VCC/VBS Supply Voltage (V)

Figure 7A. Turn-on Time vs. Temperature Figure 7B. Turn-on Time vs. VCC/VBS Voltage

300 250

250
200
Turn-off Time (nS)
Turn-on Time (nS)

200 max
m ax 150
150
100
100
typ typ
50 50

0 0
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125

VDD Supply Voltage (V) Temperature (C)

Figure 7C. Turn-on Time vs VDD Voltage Figure 8A. Turn-off Time vs. Temperature

250 300

250
200
Turn-off Time (nS)

Turn-off Time (nS)

200
150
m ax 150
max
100
100

50
typ 50
typ

0 0
10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20

VCC/VBS Supply Voltage (V) Vdd Supply Voltage (V)

Figure 8B. Turn-off Time vs. VCC/VBS Voltage Figure 8C. Turn-off Time vs. VDD Voltage

6 www.irf.com
 IR2010(S) & (PbF)

250 2 50

200 2 00

Shutdown Time (nS)

Shutdown Time (nS)

max
150 1 50 m ax

100 1 00

typ
50 50
typ

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20

Temperature (C) VCC/VBS Supply Voltage (V)

Figure 9A. Shutdown Time vs. Temperature Figure 9B. Shutdown Time vs. VCC/VBSVoltage

300 40

250
Turn-on Rise Time (nS)
Shutdown Time (nS)

30
200

max
150 20

100
10
50 typ

0 0
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
VDD Supply Voltage (V) Temperature (C)

Figure 9C. Shutdown Time vs VDD Voltage Figure 10A. Turn-on Rise Time vs. Temperature
40
40
Turn-on Rise Time (nS)

30 max
Turn-off Fall Time (nS)
S)

30
max
20
20

10 typ
typ 10

0
10 12 14 16 18 20
0
VBIAS Supply Voltage (V) -50 -25 0 25 50 75 100 125
Temperature (C)
Figure 10B. Turn-on Rise Time
vs. VBIAS (VCC=VBS=VDD) Voltage Figure 11A. Turn-off Fall Time vs. Temperature

www.irf.com 7
IR2010(S) & (PbF)

40 15

Logic '1' Input Threshold (V)

Turn-off Fall Time (nS)

12
30
max
9
min
20

6
typ
10
3

0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125

VBIAS Supply Voltage (V) Temperature (C)

Figure 11B. Turn-Off Fall Time Figure 12A. Logic “1” Input Threshold vs. Temperature
vs. VBIAS (VCC=VBS=VDD) Voltage
15
15
Logic '1' Input Threshold (V )

Logic '0' Input Threshold (V)

12 12

9 9

max
6 6

3 3
min

0 0
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125

VDD Logic Supply Voltage (V) Temperature (C)

Figure 12B. Logic “1” Input Threshold vs. VDD Voltage Figure 13A. Logic “0” Input Threshold vs. Temperature

15 5
Logic '0' Input Threshold (V)

12 4
High Level Output (V)

9 3

6 2

max
max
3 1

0 0
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
VDD Logic Supply Voltage (V) Temperature (C)

Figure 13B. Logic “0” Input Threshold vs. VDD Voltage Figure 14A. High Level Output vs. Temperature

8 www.irf.com
 IR2010(S) & (PbF)

5 1.0

4 0.8
High Level Output (V)

Low Level Output (V)

3 0.6

2 0.4

max
1 0.2
m ax

0 0.0
10 12 14 16 18 20 -50 -25 0 25 50 75 10 0 12 5
VBIAS Supply Voltage (V) Temperature (C)

Figure 14B. High Level Output vs. VBIAS Voltage Figure 15A. Low Level Output vs. Temperature

1.0 300
Offset Supply Current (uA)

0.8
Low Level Output (V)

200
0.6

0.4 m ax
100

0.2
max

0.0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125

VBIAS Supply Voltage (V) Temperature (C)

Figure 15B. Low Level Output vs. VBIAS Voltage Figure 16A. Offset Supply Current vs. Temperature

100 500
Offset Supply Current (uA)

80 400
VBS Supply Current (uA)

60 max
300
m ax

40
200

20
100
typ
0
0 20 40 60 80 100 120 140 160 180 200 0
-50 -25 0 25 50 75 100 125
Offset Supply Voltage (V) Temperature (C)

Figure 16B. Offset Supply Current vs. Offset Voltage Figure 17A. Vbs Supply Current vs. Temperature

www.irf.com 9
IR2010(S) & (PbF)

500 500

400 400
VBS Supply Current (uA)

VCC Supply Current (uA)

300 300

max
200 max 200

100 100

typ typ
0
0
-50 -25 0 25 50 75 100 125
10 12 14 16 18 20
VBS Floating Supply Voltage (V) Temperature (C)

Figure 17B. Vbs Supply Current vs. VBS Voltage Figure 18A. Vcc Supply Current vs. Temperature

500 20
VDD Supply Current (uA)

400
VCC Supply Current (uA)

15

300
10
max
200
max
5
100

typ typ
0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
Temperature (C)
VCC Voltage (V)

Figure 18B. Vcc Supply Current vs. VCC Voltage Figure 19A. Vdd Supply Current vs. Temperature

10 100
Logic '1' Input Current (uA)

8 80
VDD Supply Current (uA)

6 60
max
max
4 40

2 20
typ
typ
0 0
2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125

VDD Voltage (V) Temperature (C)

Figure 19B. Vdd Supply Current vs. VDD Voltage Figure 20A. Logic “1” Input Current vs. Temperature

10 www.irf.com
 IR2010(S) & (PbF)

100 5.0

Logic '0' Input Current (uA)

80 4.0
Logic “1” Input Current (uA)

60 3.0

40 2.0
max
max
20 1.0

typ
0 0.0
2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
V DD Voltage (V) Temperature (C)
Figure 20B. Logic “1” Input Current vs. VDD Voltage Figure 21A. Logic “0” Input Current vs. Temperature

5 .0 11.0

4 .0 10.0
Logic “0” Input Current (uA)

VBS Undervoltage Lockout + (V)

Max.

3 .0 9.0
Typ.

2 .0 8.0

m ax Min.

1 .0 7.0

0 .0 6.0
2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
VDD Voltage (V) Temperature (°C)

Figure 21B. Logic “0” Input Current vs. VDD Voltage Figure 22. VBS Undervoltage (+) vs. Temperature

11.0 11.0

10.0 10.0
VCC Undervoltage Lockout + (V)
VBS Undervoltage Lockout - (V)

Max.
Max.

9.0 9.0

Typ.
Typ.
8.0 8.0

Min.

7.0 Min. 7.0

6.0 6.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Temperature (°C) Temperature (°C)

Figure 23. VBS Undervoltage (-) vs. Temperature Figure 24. VCC Undervoltage (+) vs. Temperature

www.irf.com 11
IR2010(S) & (PbF)

11.0 5.0

Output Source Current (uA)

Vcc Undervoltage Lockout - (V)

10.0 4.0

Max.
typ
9.0 3.0

Typ. min
8.0 2.0

7.0 Min. 1.0

6.0 0.0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 10 0 12 5

Temperature (°C) Temperature (C)

Figure 25. VCC Undervoltage (-) vs. Temperature Figure 26A. Output Source Current vs. Temperature

5.0 5.0
Output Source Current (uA)

Output Sink Current (uA)

4.0 4.0

typ
3.0 3.0
typ

min
2.0 2.0
min

1.0 1.0

0.0 0.0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
Vbias Supply Voltage (V) Temperature (C)
Figure 26B. Output Source Current vs. VBIAS Voltage Figure 27A. Output Sink Current vs. Temperature
200V
5.0 1 5 0 .0 0

100V
1 2 5 .0 0
Output Sink Current (uA)

Junction Temperature (C)

4.0

1 0 0 .0 0
3.0 10V
typ
7 5 .00

2.0
min 5 0 .00

1.0 2 5 .00

0 .0 0
0.0 1.E + 0 3 1.E + 0 4 1.E + 0 5 1.E + 0 6
10 12 14 16 18 20 F re q u e n cy (H z)
Vbias Supply Voltage (V)
Figure 28. IR2010 Tj vs Frequency
Figure 27B. Output Sink Current vs. VBIAS Voltage RGATE = 10 Ohm, Vcc = 15V with IRFPE50

12 www.irf.com
 IR2010(S) & (PbF)

150.00 150.00

125.00 125.00
200V

Ju nctio n T em perature (C )
Ju nctio n Tem perature (C )

200V
100.00 100V 100.00
100V
10V
75.00 75.00
10V

50.00 50.00

25.00 25.00

0.00 0.00
1.E + 03 1.E + 04 1.E + 05 1.E + 06 1.E + 03 1.E + 04 1.E + 05 1.E + 06

Frequ ency (H z) Frequ ency (H z)

Figure 29. IR2010 Tj vs Frequency Figure 30. IR2010 Tj vs Frequency

RGATE = 16 Ohm, Vcc = 15V with IRFBC40 RGATE = 22 Ohm, Vcc = 15V with IRFBC30

200V
150.00 1 5 0 .0 0 100V

125.00 1 2 5 .0 0
Ju nction Tem perature (C )

10V
Ju nction Tem perature (C )

100.00 200V 1 0 0 .0 0
100V
75.00 7 5 .0 0
10V
50.00 5 0 .0 0

25.00 2 5 .0 0

0.00 0 .0 0
1.E + 03 1.E + 04 1.E + 05 1.E + 06 1.E + 03 1.E + 04 1.E + 05 1.E + 06
Frequ ency (H z) Freq uen cy (H z)

Figure 31. IR2010 Tj vs Frequency Figure 32. IR2010S Tj vs Frequency

RGATE = 33 Ohm, Vcc = 15V with IRFBC20 RGATE = 10 Ohm, Vcc = 15V with IRFPE50

www.irf.com 13
IR2010(S) & (PbF)

1 5 0 .0 0
150.00
200V 200V
1 2 5 .0 0 125.00
Junction Temperature (C)

100V

Junction Temperature (C)

1 0 0 .0 0 100V
10V 100.00
10V
7 5 .0 0 75.00

5 0 .0 0 50.00

2 5 .0 0 25.00

0 .0 0 0.00
1.E + 03 1.E + 04 1.E + 05 1.E + 06 1.E + 03 1.E + 04 1.E + 05 1.E + 06
Frequency (Hz) Frequency (Hz)

Figure 33. IR2010S Tj vs Frequency Figure 34. IR2010S Tj vs Frequency

RGATE = 16 Ohm, Vcc = 15V with IRFBC40 RGATE = 22 Ohm, Vcc = 15V with IRFBC30

150.00

125.00
200V
Junction Temperature (C)

100.00
100V

75.00
10V

50.00

25.00

0.00
1.E + 03 1.E + 04 1.E + 05 1.E + 06
Frequency (Hz)

Figure 35. IR2010S Tj vs Frequency

RGATE = 33 Ohm, Vcc = 15V with IRFBC20

14 www.irf.com
 IR2010(S) & (PbF)

Case Outlines

01-6010
14 Lead PDIP 01-3002 03 (MS-001AC)

01 6012
16 Lead SOIC (wide body) 01-3014 03 (MS-013AA)

www.irf.com 15
IR2010(S) & (PbF)

LEADFREE PART MARKING INFORMATION

Part number IRxxxxxx

Date code YWW? IR logo

Pin 1 ?XXXX
Identifier
Lot Code
? MARKING CODE (Prod mode - 4 digit SPN code)
P Lead Free Released
Non-Lead Free
Released
Assembly site code
Per SCOP 200-002

ORDER INFORMATION

Basic Part (Non-Lead Free) Leadfree Part

14-Lead PDIP IR2010 order IR2010 14-Lead PDIP IR2010 order IR2010PbF
16-Lead SOIC IR2010S order IR2010S 16-Lead SOIC IR2010S order IR2010SPbF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
This product has been qualified per industrial level
Data and specifications subject to change without notice. 9/12/2004

16 www.irf.com