ZXGD3005E6

25V 10A GATE DRIVER IN SOT26

Description and Applications Features and Benefits


ADVANCE INFORMATION

The ZXGD3005E6 is a high-speed non-inverting single gate driver Emitter-Follower Configuration for Ultra-Fast Switching
capable of driving up to 10A into a MOSFET or IGBT gate capacitive  <10ns Propagation Delay Time
load from supply voltages up to 25V. With propagation delay times  <20ns Rise/Fall Time
down to <10ns and correspondingly rise/fall times of <20ns.  Non-Inverting Voltage Buffer Stage
 Wide Supply Voltage Up to 25V to Minimize On-Losses
This gate driver ensures rapid switching of the MOSFET or IGBT to  10A Peak Current Drive into Capacitive Loads
minimize power losses and distortion in high current switching  Low Input Current of 1mA to Deliver 4A Output Current
applications. It is ideally suited to act as a voltage buffer between the  Separate Source and Sink Outputs for Independent Control of
typically high output impedances of a controller IC and the effectively Rise and Fall Time
low impedance on the gate of a power MOSFET or IGBT during  Optimized Pin-Out to Ease Board Layout and Minimize Parasitic
switching. Its low input voltage requirement and high current gain Inductance of Traces
allows high current driving from low voltage controller ICs.  Rugged Design That Avoids Latch-Up or Shoot-Through Issues
 Near - Zero Quiescent Supply Current
The ZXGD3005E6 has separate source and sink outputs that enables  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
the turn-on and turn-off times of the MOSFET or IGBT to be  Halogen and Antimony Free. “Green” Device (Note 3)
independently controlled. In addition, the wide supply voltage range  For automotive applications requiring specific change
allows full enhancement of the MOSFET or IGBT to minimize on-state control (i.e. parts qualified to AEC-Q100/101/200, PPAP
losses and permits +15V to -5V gate drive voltage to prevent dV/dt capable, and manufactured in IATF 16949 certified
induced false triggering of IGBTs. The ZXGD3005E6 has been facilities), please contact us or your local Diodes
designed to be inherently rugged to latch-up and shoot-through issues. representative.
The optimized pin-out SOT26 package eases board layout, enabling https://www.diodes.com/quality/product-definitions/
reduced parasitic inductance of traces.
Mechanical Data
Power MOSFET and IGBT Gate Driving in:
 Synchronous Switch-Mode Power Supplies  Case: SOT26
 Power Factor Correction (PFC) in Power Supplies  Case Material: Molded Plastic, “Green” Molding Compound
 Secondary Side Synchronous Rectification UL Flammability Classification Rating 94V-0
 Plasma Display Panel Power Modules  Moisture Sensitivity: Level 1 per J-STD-020
 1, 2 and 3-Phase Motor Control Circuits  Terminals: Finish – Matte Tin Plated Leads, Solderable per
 Audio Switching Amplifier Power Output Stages MIL-STD-202, Method 208
 Solar Inverters  Weight: 0.018 grams (Approximate)

Pin Name Pin Function

SOT26 V CC Source
VCC Supply Voltage High
IN Do Not Connect IN Driver Input Pin
1
VEE Supply Voltage Low
V EE Sink
SOURCE Source Current Output

Top View SINK Sink Current Output

Top View Pin-Out

Ordering Information (Note 4)

Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
ZXGD3005E6TA 3005 7 8 3000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

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Marking Information
ADVANCE INFORMATION

3005 = Product Type Marking Code

YM = Date Code Marking

YM
3005 Y = Year (ex: I = 2021)
M = Month (ex: 9 = September)

Date Code Key

Year 2010 … 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030
Code X … I J K L M N O P R S

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

Typical Application Circuit

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Supply Voltage, with Respect to VEE VCC 25 V
Input Voltage, with Respect to VEE VIN 25 V
Output Difference Voltage (Source – Sink) V(SOURCE-SINK) ±7.5 V
Peak Output Current IPK ±10 A
Input Current IIN ±100 mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Power Dissipation (Notes 5 & 6) 1.1 W
PD
Linear Derating Factor 8.8 mW/C
Thermal Resistance, Junction to Ambient (Notes 5 & 6) RθJA 113
C/W
Thermal Resistance, Junction to Lead (Note 7) RθJL 105
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Notes: 5. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (VCC) and pin 3 (VEE) connected separately to each half.
6. For device with two active die running at equal power.
7. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (VEE).

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
Output Voltage, High VOH — VCC - 0.8 — VIN = VCC
ADVANCE INFORMATION

V
Output Voltage, Low VOL — VEE + 0.2 VEE + 0.5 VIN = VEE
25 — — IQ = 100μA, VIN = VCC
Supply Breakdown Voltage BVCC V
25 — — IQ = 100μA, VIN = VEE = 0V
— — 50 VCC = 20V, VIN = VCC
Quiescent Supply Current IQ nA
— — 50 VCC = 20V, VIN = VEE = 0V
Source Current I(SOURCE) — 4.0 — VCC = 5V, IIN = 1mA, VOUT = 0V
A
Sink Current I(SINK) — 3.8 — VCC = 5V, IIN=-1mA, VOUT = 5V
6.4 RIN = 200Ω
VCC = 15V, VEE = 0V
5.5 RIN = 1kΩ
Source Current VIN = 15V
I(SOURCE) — 3.9 — A RIN = 10kΩ
with Varying Input Resistances
2.2 CL = 100nF, RL = 0.18Ω
RIN = 100kΩ
0.44 RSOURCE = 0Ω, RSINK = 0Ω
RIN = 1000kΩ
7.7 RIN = 200Ω
VCC = 15V, VEE = 0V
6.5 RIN = 1kΩ
Sink Current VIN = 15V
I(SINK) — 4.4 — A RIN = 10kΩ
with Varying Input Resistances
2.3 CL = 100nF, RL = 0.18Ω
RIN = 100kΩ
0.46 RSOURCE = 0Ω, RSINK = 0Ω
RIN = 1000kΩ
VCC = 15V, VEE = 0V
td(rise) 8 VIN = 0V to 15V
Switching Times tr 48
— — ns RIN = 1kΩ
with Low Load Capacitance CL = 10nF td(fall) 16
35 CL = 10nF, RL = 0.18Ω
tf
RSOURCE = 0Ω, RSINK = 0Ω
VCC = 15V, VEE = 0V
td(rise) 46 VIN = 0V to 15V
Switching Times tr 419
— — ns RIN = 1kΩ
with High Load Capacitance CL = 100nF td(fall) 47
467 CL = 100nF, RL = 0.18Ω
tf
RSOURCE = 0Ω, RSINK = 0Ω
VCC = 15V, VEE = -5V
td(rise) 24 VIN = -5 to 15V
Switching Times tr 133
— — ns RIN = 1kΩ
with Asymmetric Source and Sink Resistors td(fall) 16
37 CL = 10nF, RL = 0.18Ω
tf
RSOURCE = 4.7Ω, RSINK = 0Ω

Switching Test Circuit and Timing Diagram

VCC
90%

VIN
VCC VIN
VOUT
RSOURCE
SOURCE
50Ω RIN
IN 10%
ZXGD3005E6
SINK td(rise) td(fall)
V RSINK CL

VEE 90% 90%

50Ω
RL
VOUT

10% 10%

tr tf

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Typical Switching Characteristics (@TA = +25°C, unless otherwise specified.)

ADVANCE INFORMATION

VIN = 0 to 15V VIN = 0 to 15V

15 VCC= 15V
15 VCC= 15V
VEE= 0V VEE= 0V

Voltage (V)
RIN = 1k RIN = 1k
Voltage (V)

10 10
CL = 10nF CL = 100nF
VOUT RL = 0.18 VOUT RL = 0.18
RSOURCE= 0 RSOURCE= 0
5 5
RSINK = 0 RSINK = 0
VIN VIN

0 0

0 100 200 300 400 500 600 700 800 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Time (ns) (s)
Time (μs)
Switching Speed Switching Speed
Low Load Capacitance CL = 10nF High Load Capacitance CL = 100nF

10
15 VIN = -5 to 15V VIN = 0 to 15V CL= 100nF
Supply Current (A)

VCC= 15V VCC= 15V

1
VEE= -5V VEE= 0V
10
Voltage (V)

RIN = 1k Square Wave

VOUT CL = 10nF 0.1
5 RL = 0.18
RSOURCE= 4.7 0.01 CL= 1F
0 VIN RSINK = 0
CL= 1nF
1E-3
-5 CL= 10nF
1E-4
0 100 200 300 400 500 600 700 800 10 100 1k 10k 100k 1M
Time (ns) Frequency (Hz)
Switching Speed Supply Current
Asymmetric Source and Sink Resistors

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Typical Switching Characteristics (@TA = +25°C, unless otherwise specified.)

ADVANCE INFORMATION

10 10
Peak Source Current (A)

Peak Sink Current (A)

1 1μF
CL=1uF 1 1μF
CL=1uF

CL=100nF CL=100nF

VIN = 15V VIN = 15V

0.1 CL=10nF 0.1 CL=10nF
VCC= 15V VCC= 15V
VEE= 0V VEE= 0V
RL = 0.18 RL = 0.18
0.01 CL=1nF CL=1nF
0.01
1k 10k 100k 1M 10M 1k 10k 100k 1M 10M
RIN Input Resistance () RIN Input Resistance ()
Source Current vs. Input Resistance Sink Current vs. Input Resistance

RIN=1M RIN=1M
1000 1000

RIN=100k RIN=100k
td(fall) (ns)
td(rise) (ns)

100 100

V
VIN = 15V
IN = 15V VIN = 15V
10 V
VCC== 15V
15V
10
VCC= 15V
RIN=10k CC
RIN=10k
RIN=1k V
VEE = 0V
EE= 0V
RIN=1k VEE= 0V
RIN=200 R 0.18
RL == 0.18 
RIN=200
L RL = 0.18
1 1
1 10 100 1k 1 10 100 1k
CL Load Capacitance (nF) CL Load Capacitance (nF)
Turn-On Delay Time Turn-Off Delay Time

10000 RIN=1M 10000 RIN=1M

RIN=100k RIN=100k
1000 1000
tf (ns)
tr (ns)

100 RIN=10k VIN = 15V 100 RIN=10k VIN = 15V

VCC= 15V VCC= 15V
RIN=1k VEE= 0V RIN=1k
VEE= 0V
10 RIN=200 RL = 0.18 10 RIN=200
RL = 0.18

1 10 100 1k 1 10 100 1k
CL Load Capacitance (nF) CL Load Capacitance (nF)
Turn-On Rise Time Turn-Off Fall Time

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Application Notes
ADVANCE INFORMATION

Independent Control of Rise and Fall

Load
Time
DESAT

An application may require the turn-on (tON) and turn-off (tOFF) time +15V
to be independently controlled, which can be achieved by setting
VCC
different RSOURCE and RSINK values. With asymmetric RSOURCE Isolated RSOURCE
SOURCE
and RSINK resistors, then a potential difference will occur between IN+
driver IC
OUT RIN IN
the SOURCE and SINK pins during the switching transition. If the with ZXGD3005E6
ZXGD3005
protection
potential difference across the SOURCE and SINK pins is greater SINK RSINK
than 7.5V, then it could damage the ZXGD3005E6.
VEE
GND
In this circuit example of driving an IGBT, a blocking diode is
added in series with RSINK to protect against excess reverse -5V
current being induced into the SINK pin.

Circuit Example of Driving A MOSFET Circuit Example of Driving An IGBT

Application example of gate driving a MOSFET from 0V to 15V with Application example of gate driving an IGBT with independent tON and
RSOURCE = RSINK = 0Ω tOFF using asymmetric RSOURCE and RSINK. In addition, the gate is
driven from -5 to +15V to prevent dV/dt induced false triggering.
Load
Load
DESAT
+15V
+15V

VCC
VCC
SOURCE RSOURCE
Isolated SOURCE RSOURCE
DRV RIN IN driver IC
Power ZXGD3005 IN+ OUT RIN IN
ZXGD3005E6 with ZXGD3005
Supply ZXGD3005E6
SINK protection
Controller RSINK SINK RSINK
IC
VEE VEE
GND GND

-5V

Switching Time Characteristic Switching Time Characteristic

VIN = 0 to 15V VIN = -5 to 15V
15 15
VCC= 15V VCC= 15V
VEE= 0V VEE= -5V
10
Voltage (V)

RIN = 1k RIN = 1k

Voltage (V)

10 VOUT
CL = 10nF CL = 10nF
VOUT RL = 0.18 5 RL = 0.18
RSOURCE= 0 RSOURCE= 4.7
5
RSINK = 0 0 VIN RSINK = 0
VIN

0 -5

0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800
Time (ns) Time (ns)
Symmetric Source and Sink Resistors Asymmetric Source and Sink Resistors

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Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.
ADVANCE INFORMATION

SOT26
D

SOT26
Dim Min Max Typ
A1 0.013 0.10 0.05
E1 E A2 1.00 1.30 1.10
A3 0.70 0.80 0.75
b 0.35 0.50 0.38
c 0.10 0.20 0.15
D 2.90 3.10 3.00
b
e - - 0.95
a1 e1 - - 1.90
e1 E 2.70 3.00 2.80
E1 1.50 1.70 1.60
L 0.35 0.55 0.40
a - - 8°
A2 a1 - - 7°
A3 A1
All Dimensions in mm
S eating Plane a
L
e c

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT26

C1

Dimensions Value (in mm)

C 2.40
C1 0.95
G 1.60
Y1 G C
X 0.55
Y 0.80
Y1 3.20
Y

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IMPORTANT NOTICE

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
ADVANCE INFORMATION

REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
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2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product
described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products.
Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting
the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring
their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-
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