19-1248; Rev 1; 5/98

KIT
ATION
EVALU B L E
AVAILA
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
_________________General Description ____________________________Features

MAX2620
The MAX2620 combines a low-noise oscillator with two ♦ Low-Phase-Noise Oscillator: -110dBc/Hz
output buffers in a low-cost, plastic surface-mount, (25kHz offset from carrier) Attainable
ultra-small µMAX package. This device integrates func-
tions typically achieved with discrete components. The ♦ Operates from Single +2.7V to +5.25V Supply
oscillator exhibits low phase noise when properly ♦ Low-Cost Silicon Bipolar Design
mated with an external varactor-tuned resonant tank
circuit. Two buffered outputs are provided for driving ♦ Two Output Buffers Provide Load Isolation
mixers or prescalers. The buffers provide load isolation ♦ Insensitive to Supply Variations
to the oscillator and prevent frequency pulling due to
load-impedance changes. Power consumption is typi- ♦ Low, 27mW Power Consumption (VCC = 3.0V)
cally just 27mW in operating mode (VCC = 3.0V), and ♦ Low-Current Shutdown Mode: 0.1µA (typ)
drops to less than 0.3µW in standby mode. The MAX2620
operates from a single +2.7V to +5.25V supply.
________________________Applications _______________Ordering Information
Analog Cellular Phones PART TEMP. RANGE PIN-PACKAGE
Digital Cellular Phones MAX2620EUA -40°C to +85°C 8 µMAX
900MHz Cordless Phones MAX2620E/D -40°C to +85°C Dice*
900MHz ISM-Band Applications *Dice are tested at TA = +25°C, DC parameters only.

Land Mobile Radio

Pin Configuration appears at end of data sheet.
Narrowband PCS (NPCS)

____________________________________________________Typical Operating Circuit

VCC VCC

10Ω
1000pF
10nH
1000pF 1.5pF
1 VCC1 OUT 8
C17 C5 OUT TO MIXER
MAX2620
1.5pF 1.5pF VCC
VTUNE 2 TANK VCC2 7
C3
1k 0.1µF
2.7pF 3 FDBK 6
CERAMIC GND
C6
D1 RESONATOR C4 1000pF
L1 4 SHDN BIAS OUT 5
ALPHA 1pF OUT TO SYNTHESIZER
SMV1204-34 SUPPLY

51Ω

SHDN VCC

1000pF

900MHz BAND OSCILLATOR

________________________________________________________________ Maxim Integrated Products 1

For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800.
For small orders, phone 408-737-7600 ext. 3468.
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
ABSOLUTE MAXIMUM RATINGS
MAX2620

VCC1, VCC2 to GND................................................-0.3V to +6V Operating Temperature Range

TANK, SHDN to GND .................................-0.3V to (VCC + 0.3V) MAX2620EUA .................................................-40°C to +85°C
OUT, OUT to GND...........................(VCC - 0.6V) to (VCC + 0.3V) Junction Temperature ......................................................+150°C
FDBK to GND ..................................(VCC - 2.0V) to (VCC + 0.3V) Storage Temperature Range .............................-65°C to +165°C
Continuous Power Dissipation (TA = +70°C) Lead Temperature (soldering, 10sec) .............................+300°C
µMAX (derate 5.7mW/°C above +70°C) .....................457mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS
(VCC1, VCC2 = +2.7V to +5.25V, FDBK = open, TANK = open, OUT and OUT connected to VCC through 50Ω, SHDN = 2V,
TA = -40°C to +85°C, unless otherwise noted. Typical values measured at VCC1 = VCC2 = 3.0V, TA = +25°C.) (Note 1)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Supply Current 9.0 12.5 mA
Shutdown Current SHDN = 0.6V 0.1 2 µA
Shutdown Input Voltage High 2.0 V
Shutdown Input Voltage Low 0.6 V
Shutdown Bias Current High SHDN = 2.0V 5.5 20 µA
Shutdown Bias Current Low SHDN = 0.6V 0.5 µA
Note 1: Specifications are production tested and guaranteed at TA = +25°C and TA = +85°C. Specifications are guaranteed by
design and characterization at TA = -40°C.

AC ELECTRICAL CHARACTERISTICS
(Per Test Circuit of Figure 1, VCC = +3.0V, SHDN = VCC, ZLOAD = ZSOURCE = 50Ω, PIN = -20dBm (50Ω), fTEST = 900MHz,
TA = +25°C, unless otherwise noted.)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Frequency Range TA = -40°C to +85°C (Note 2) 10 1050 MHz
Reverse Isolation OUT or OUT to TANK; OUT, OUT driven at P = -20dBm 50 dB
Output Isolation OUT to OUT 33 dB
Note 2: Guaranteed by design and characterization at 10MHz, 650MHz, 900MHz, and 1050MHz. Over this frequency range, the
magnitude of the negative real impedance measured at TANK is greater than one-tenth the magnitude of the reactive
impedances at TANK. This implies proper oscillator start-up when using an external resonator tank circuit with Q > 10. C3
and C4 must be tuned for operation at the desired frequency.

2 _______________________________________________________________________________________
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
TYPICAL OPERATING CIRCUIT PERFORMANCE—900MHz Band Ceramic-

MAX2620
Resonator-Based Tank
(Per Typical Operating Circuit, VCC = +3.0V, VTUNE = 1.5V, SHDN = VCC, load at OUT = 50Ω, load at OUT = 50Ω, L1 = coaxial
ceramic resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, TA = +25°C, unless otherwise noted.)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Tuning Range VTUNE = 0.5V to 3.0V ±13 MHz
SSB @ ∆f = 25kHz -110
Phase Noise dBc/Hz
SSB @ ∆f = 300kHz -132
At OUT (Note 2) -6 -2
At OUT, per test circuit of Figure 1; TA = -40°C to +85°C
Output Power (single-ended) -11 -8 dBm
(Note 3)
At OUT (Note 3) -16 -12.5
Noise Power fO ± >10MHz -147 dBm/Hz
Average Tuning Gain 11 MHz/V
Second-Harmonic Output -29 dBc
Load Pull VSWR = 1.75:1, all phases 163 kHzp-p
Supply Pushing VCC stepped from 3V to 4V 71 kHz/V
Note 3: Guaranteed by design and characterization.

TYPICAL OPERATING CIRCUIT PERFORMANCE—900MHz Band Inductor-Based Tank

(Per Typical Operating Circuit, VCC = +3.0V, VTUNE = 1.5V, SHDN = VCC, load at OUT = 50Ω, load at OUT = 50Ω, L1 = 5nH
(Coilcraft A02T), C6 = 1.5pF, TA = +25°C, unless otherwise noted.)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Tuning Range VTUNE = 0.5V to 3.0V ±15 MHz
SSB @ ∆f = 25kHz -107
Phase Noise dBc/Hz
SSB @ ∆f = 300kHz -127
At OUT (Note 2) -6 -2
At OUT, per test circuit of Figure 1; TA = -40°C to +85°C
Output Power (single-ended) -11 -8 dBm
(Note 3)
At OUT (Note 3) -16 -12.5
Noise Power fO ± >10MHz -147 dBm/Hz
Average Tuning Gain 13 MHz/V
Second-Harmonic Output -29 dBc
Load Pull VSWR = 1.75:1, all phase angles 340 kHzp-p
Supply Pushing VCC stepped from 3V to 4V 150 kHz/V
Note 3: Guaranteed by design and characterization.

_______________________________________________________________________________________ 3
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
__________________________________________Typical Operating Characteristics
MAX2620

(Per test circuit of Figure 1, VCC = +3.0V, SHDN = VCC, ZLOAD = ZSOURCE = 50Ω, PIN = -20dBm/50Ω, fTEST = 900MHz, TA = +25°C,
unless otherwise noted.)

OUT OUTPUT POWER vs. FREQUENCY OUT OUTPUT POWER vs. FREQUENCY
OVER VCC AND TEMPERATURE OVER VCC AND TEMPERATURE
MAX2620-01 MAX2620-02
-5 -11.0

C TA = +85°C VCC = 5.25V TA = +85°C

VCC = 5.25V TA = +25°C
-11.5
-6 TA = -40°C
VCC = 5.25V
TA = +25°C
POWER (dBm)

POWER (dBm)
-12.0
-7 TA = -40°C
VCC = 2.7V
-12.5
A B VCC = 2.7V
-8
VCC = 2.7V -13.0

-9 -13.5
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
FREQUENCY (MHz) FREQUENCY (MHz)
A: 10MHz BAND CIRCUIT
B: NOT CHARACTERIZED FOR THIS FREQUENCY BAND.
EXPECTED PERFORMANCE SHOWN.
C: 900MHz BAND CIRCUIT

Table 1. Recommended Load Impedance at OUT or OUT for

Optimum Power Transfer

FREQUENCY REAL COMPONENT IMAGINARY COMPONENT

(MHz) (R in Ω) (X in Ω)
250 106 163
350 68 102
450 60 96
550 35 79
650 17.5 62.3
750 17.2 50.6
850 10.9 33.1
950 7.3 26.3
1050 6.5 22.7

4 _______________________________________________________________________________________
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs

MAX2620
_____________________________Typical Operating Characteristics (continued)
(Per Typical Operating Circuit, VCC = +3.0V, VTUNE = 1.5V, SHDN = VCC, load at OUT = 50Ω, load at OUT = 50Ω, L1 = coaxial
ceramic resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, TA = +25°C, unless otherwise noted.)

900MHz BAND CIRCUIT*

REVERSE ISOLATION vs. FREQUENCY TYPICAL 1/S11 vs. FREQUENCY
MEASURED AT TEST PORT

MAX2620-03
0 VCC = 2.7V TO 5.25V MAX2620-04

C3, C4 REMOVED
-10
1050MHz
REVERSE ISOLATION (dB)

-20 21 + j78
-30 900MHz
-40 36 + j90

-50 650MHz
800MHz 84 + j142
-60 49 + j105
-70
-80
-90
50 250 450 650 850 1050
FREQUENCY (MHz) *SEE FIGURE 1

10MHz BAND CIRCUIT SUPPLY CURRENT

TYPICAL 1/S11 vs. FREQUENCY vs. TEMPERATURE
MEASURED AT TEST PORT 10.0

MAX2620-06
MAX2620-05

9.5
VCC = 5.25V
SUPPLY CURRENT (mA)

15MHz 9.0
28 + j79.8
VCC = 2.7V
8.5
10MHz
63.6 + j121.5
8.0
5MHz
262 + j261
7.5

7.0
-40 -20 0 20 40 60 80 100
C3 = C4 = 270pF TEMPERATURE (°C)
L3 = 10µH
C2 = C10 = C13 = 0.01µF

_______________________________________________________________________________________ 5
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
_____________________________Typical Operating Characteristics (continued)
MAX2620

(Per Typical Operating Circuit, VCC = +3.0V, VTUNE = 1.5V, SHDN = VCC, load at OUT = 50Ω, load at OUT = 50Ω, L1 = coaxial
ceramic resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, TA = +25°C, unless otherwise noted.)

OUTPUT SPECTRUM
PHASE NOISE vs. TEMPERATURE FUNDAMENTAL NORMALIZED TO 0dB SINGLE SIDEBAND PHASE NOISE
-104 0 -40

MAX2620-08
MAX2620-07

MAX2620-09
SSB @ ∆f = 25kHz
-10 -50
L1 = 5nH INDUCTOR
-106 RELATIVE OUTPUT LEVEL (dBc) -20 -60 C6 = 1.5pF
SSB PHASE NOISE (dBc/Hz)

SSB PHASE NOISE (dBc/Hz)

-30 -70
-80
-108 -40
L1 = 5nH INDUCTOR -90
C6 = 1.5pF -50
-100
-110 -60
-110
-70 L1 = COAXIAL
L1 = COAXIAL CERAMIC RESONATOR -120 CERAMIC RESONATOR
-112 (TRANS-TECH SR8800LPQ1357BY) -80 -130 (TRANS-TECH
C6 = 1pF SR8800LPQ1357BY)
-90 -140
C6 = 1pF
-114 -100 -150
-40 -20 0 20 40 60 80 0 1.3 2.6 3.9 5.2 6.5 0.1 1 10 100 1000
TEMPERATURE (°C) FREQUENCY (GHz) OFFSET FREQUENCY (kHz)

_______________________________________________________________Pin Description
PIN NAME FUNCTION
Oscillator DC Supply Voltage. Decouple VCC1 with 1000pF capacitor to ground. Use a capacitor with low
series inductance (size 0805 or smaller). Further power-supply decoupling can be achieved by adding a
1 VCC1
10Ω resistor in series from VCC1 to the supply. Proper power-supply decoupling is critical to the low noise
and spurious performance of any oscillator.
2 TANK Oscillator Tank Circuit Connection. Refer to the Applications Information section.
Oscillator Feedback Circuit Connection. Connecting capacitors of the appropriate value between FDBK and
3 FDBK TANK and between FDBK and GND tunes the oscillator’s reflection gain (negative resistance) to peak at the
desired oscillation frequency. Refer to the Applications Information section.
Logic-Controlled Input. A low level turns off the entire circuitry such that the IC will draw only leakage current
4 SHDN
at its supply pins. This is a high-impedance input.
Open-Collector Output Buffer (complement). Requires external pull-up to the voltage supply. Pull-up can be
resistor, choke, or inductor (which is part of a matching network). The matching-circuit approach provides
5 OUT
the highest-power output and greatest efficiency. Refer to Table 1 and the Applications Information section.
OUT may be used with OUT in a differential output configuration.
6 GND Ground Connection. Provide a low-inductance connection to the circuit ground plane.
Output Buffer DC Supply Voltage. Decouple VCC2 with a 1000pF capacitor to ground. Use a capacitor with
7 VCC2
low series inductance (size 0805 or smaller).
Open-Collector Output Buffer. Requires external pull-up to the voltage supply. Pull-up can be resistor,
choke, or inductor (which is part of a matching network). The matching-circuit approach provides the high-
8 OUT
est-power output and greatest efficiency. Refer to Table 1 and the Applications Information section. OUT
may be used with OUT in a differential output configuration.

6 _______________________________________________________________________________________
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs

MAX2620
VCC

10Ω
VCC 1000pF
L3*
220nH
C13*
1000pF 1000pF OUT
1 VCC1 OUT 8
MAX2620 ZO = 50Ω
TEST PORT VCC
2 TANK VCC2 7
C3*
C2* 2.7pF 1000pF
3 FDBK GND 6 C10*
1000pF
C4* 1000pF OUT
VCC 1pF 4 SHDN BIAS OUT 5
ZO = 50Ω
SUPPLY

ON 51Ω
OFF
VCC
*AT 10MHz, CHANGE TO:
C3 = C4 = 270pF
10Ω 1000pF 1000pF L3 = 10µH
C2 = C10 = C13 = 0.01µF

Figure 1. 900MHz Test Circuit

_______________Detailed Description __________Applications Information

Oscillator Design Principles
The oscillator is a common-collector, negative- At the frequency of interest, the MAX2620 portion of
resistance type that uses the IC’s internal parasitic ele- Figure 2 shows the one-port circuit model for the TANK
ments to create a negative resistance at the base- pin (test port in Figure 1).
emitter port. The transistor oscillator has been opti- For the circuit to oscillate at a desired frequency, the res-
mized for low-noise operation. Base and emitter leads onant tank circuit connected to TANK must present an
are provided as external connections for a feedback impedance that is a complement to the network
capacitor and resonator. A resonant circuit, tuned to (Figure 2). This resonant tank circuit must have a positive
the appropriate frequency and connected to the base real component that is a maximum of one-half the magni-
lead, will cause oscillation. Varactor diodes may be tude of the negative real part of the oscillator device, as
used in the resonant circuit to create a voltage-con- well as a reactive component that is opposite in sign to
trolled oscillator (VCO). The oscillator is internally the reactive component of the oscillator device.
biased to an optimal operating point, and the base and
emitter leads need to be capacitively coupled due to
the bias voltages present.
Output Buffers
The output buffers (OUT and OUT) are an open-
collector, differential-pair configuration and provide
load isolation to the oscillator. The outputs can be used TANK
differentially to drive an integrated circuit mixer. jXL -jXT -Rn
LESS THAN 1/2
Alternatively, isolation is provided between the buffer TIMES RL
outputs when one output drives a mixer (either upcon- RESONANT OSCILLATOR
version or downconversion) and the other output drives TANK DEVICE
a prescaler. The isolation in this configuration prevents
prescaler noise from corrupting the oscillator signal’s
spectral purity.
A logic-controlled SHDN pin turns off all bias to the IC
when pulled low. Figure 2. Simplified Oscillator Circuit Model

_______________________________________________________________________________________ 7
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
Keeping the resonant tank circuit’s real component less The negative resistance of the MAX2620 TANK pin can
MAX2620

than one-half the magnitude of the negative real com- be optimized at the desired oscillator frequency by
ponent ensures that oscillations will start. After start-up, proper selection of feedback capacitors C3 and C4.
the oscillator’s negative resistance decreases, primarily For example, the one-port characteristics of the device
due to gain compression, and reaches equilibrium with are given as a plot of 1/S11 in the Typical Operating
the real component (the circuit losses) in the resonant Characteristics. 1/S11 is used because it maps inside
tank circuit. Making the resonant tank circuit reactance the unit circle Smith chart when the device exhibits
tunable (e.g., through use of a varactor diode) allows negative resistance (reflection gain).
for tuneability of the oscillation frequency, as long as
the oscillator exhibits negative resistance over the
desired tuning range. See Figures 3 and 4.

VCC VCC

1000pF

10Ω

1000pF
10µH 27pF

0.01µF
VTUNE 1 8 OUT TO
VCC1 OUT
MIXER
C5 VCC
150pF MAX2620
2 7
1k TANK VCC2
C17 C3
33pF 270pF 3 6 1000pF
FDBK GND
C6 L1
33pH 2.2µH
C4 0.01µF
270pF 4 5 OUT TO
SHDN OUT
D1 SYNTHESIZER

SHDN 51Ω

1000pF

D1 = SMV1200-155 DUAL VARACTOR VCC

Figure 3. 10MHz VCO LC Resonator

8 _______________________________________________________________________________________
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
Rn, the negative real impedance, is set by C3 and C4

MAX2620
VCC VCC and is approximately:
0.01µF
[Equation 2]
 1  1 
R n = gm   
10Ω  2πfC 3   2πfC4 
0.01µF where gm = 0.018mS.
10µH 27pF
Using the circuit model of Figure 5, the following exam-
ple describes the design of an oscillator centered at
0.01µF
1 8
900MHz.
VCC1 OUT OUT
VCC Choose: L1 = 5nH ±10%
30pF
2 7 Q = 140
TANK VCC2
Calculate Rp = Q x 2π x f x L1
0.01µF
3 MAX2620 6 Using Equation 1, solve for varactor capacitance (CD1).
120pF FDBK GND
CD1 is the capacitance of the varactor when the volt-
0.01µF
4 5 age applied to the varactor is approximately at half-
120pF SHDN OUT OUT supply (the center of the varactor’s capacitance range).
Assume the following values:
51Ω
CSTRAY = 2.7pF, C17 = 1.5pF, C6 = 1.5pF, C5 = 1.5pF,
0.01µF
SHDN C3 = 2.7pF, and C4 = 1pF.
The value of CSTRAY was based on approximate perfor-
mance of the MAX2620 EV kit. Values of C3 and C4 are
VCC chosen to minimize Rn (Equation 2) while not loading
X = STATEK AT-3004 10MHz
FUNDAMENTAL MODE CRYSTAL SURFACE MOUNT
the resonant circuit with excessive capacitance.
CLOAD = 20pF The varactor’s capacitance range should allow for the
desired tuning range. Across the tuning frequency
Figure 4. 10MHz Crystal Oscillator range, ensure that Rp < 1/2 Rn.
The MAX2620’s oscillator is optimized for low-phase-
Example Calculation noise operation. Achieving lowest phase-noise charac-
According to the electrical model shown in Figure 5, the teristics requires the use of high-Q (quality factor)
resonance frequency can be calculated as: components such as ceramic transmission-line type
[Equation 1] resonators or high-Q inductors. Also, keep C5 and C17

1
fO =
 C x CD1
2π L1 CSTRAY + 17 + C6 +
C 3 + C 03 C4 + C 04 ( )( ) 
 C17 + CD1 C 3 + C 03 + C4 + C 04 
 

_______________________________________________________________________________________ 9
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
MAX2620

TEST PORT
MEASUREMENT
(FIGURE 1)
C5 MAX2620

C3 C03
C17 Rn
2.4pF
CSTRAY L1 Rp C6
CD1 C04
C4 2.4pF

PCB VARACTOR+ INDUCTOR

PARASITICS COUPLING OR
CERAMIC
RESONATOR

RESONANT TANK MODEL MAX2620 PACKAGE MODEL

Figure 5. Electrical Model of MAX2620 Circuit

(see Typical Operating Circuit) as small a value as pos- __________________Pin Configuration

sible while still maintaining desired frequency and tun-
ing range to maximize loaded Q.
There are many good references on the topic of oscilla- TOP VIEW
tor design. An excellent reference is “The Oscillator
as a Reflection Amplifier, an Intuitive Approach to
Oscillator Design,” by John W. Boyles, Microwave
Journal, June 1986, pp. 83–98. VCC1 1 8 OUT
TANK 2 7 VCC2
Output Matching Configuration MAX2620
GND
FDBK 3 6
Both of the MAX2620’s outputs (OUT and OUT) are
SHDN 4 5 OUT
open collectors. They need to be pulled up to the sup-
ply by external components. An easy approach to this µMAX
pull-up is a resistor. A 50Ω resistor value would inher-
ently match the output to a 50Ω system. The Typical
Operating Circuit shows OUT configured this way.
Alternatively, a choke pull-up (Figure 1), yields greater
output power (approximately -8dBm at 900MHz).
for maximum power transfer. Using this data and stan-
When maximum power is required, use an inductor as dard matching-network synthesis techniques, a match-
the supply pull-up, and match the inductor’s output ing network can be constructed that will optimize power
impedance to the desired system impedance. Table 1 output into most load impedances. The value of the
in the Typical Operating Characteristics shows recom- inductor used for pull-up should be used in the synthe-
mended load impedance presented to OUT and OUT sis of the matching network.

10 ______________________________________________________________________________________
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs

MAX2620
________________________________________________________Package Information

8LUMAXD.EPS

______________________________________________________________________________________ 11
 10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
MAX2620

NOTES

12 ______________________________________________________________________________________