Department of Electrical Engineering

Riphah International University, Faisalabad Campus,

Faisalabad, Pakistan

Program: B.Sc. Electrical engineering & Technology Semester: 6th

Subject: ETL-319 Industrial Electronics Date: …………….

Experiment # 2: Explain the characteristics of SCR, RC phase control

circuit DIAC &TRIAC characteristic.
Objectives
We will learn followings…

 Understanding the construction and characteristics of an SCR.

 Understanding the operation of an SCR.
 Understanding and measuring the characteristics of TRIAC.
 Understanding and measuring the characteristics of DIAC.
 Performing the DIAC-TRIAC phase control circuit.

Name: …………………………

Rubrics

Performance Lab Report

Total Marks Total Marks
Description Description
Marks Obtained Marks Obtained
Experiment
related 10 Organization/Structure
Knowledge 10
Data analysis 10
Data Presentation 10
Individual &
Team behavior 10
Total Marks obtained

Name & Signature of faculty: …………………………………

 (a)Understand SCR and RC Phase Control circuit.
Objectives
We will learn followings…
 Understanding the construction and characteristics of an SCR.
 Understanding the operation of an SCR.

Apparatus:
 1 – Power Supply Unit IT9000
 1 – Module IT-9003
 1 – Analog Multimeter
 1 – Dual-Trace Oscilloscope
Theory:
Discussion
The silicon-controlled rectifier (SCR) is the most important thyristor in the family of PNPN devices.
It was developed by General Electric in 1957. The SCR acts as a switch in an AC power control
circuit.

Fig. 2-1 SCR (a) circuit symbol (b) PNPN structure SCR Operation

The SCR is a PNPN four-layer semiconductor device having three terminals: anode (A), cathode (K),
and gate (G). The symbol and construction for an SCR are shown in Fig. 2-1. In most control
applications, the control signal is applied between the gate and the cathode while the load is
connected to either the anode or the cathode in series. The circuit symbol of the SCR is illustrated in
Fig. 2-1(a). The direction of arrow refers the direction of anode current. The PNPN four-layer
structure for the SCR, shown in Fig. 2-1(b), can be considered as PNP and NPN transistor connected
as the manner of Fig. 2-2- We will discuss the operation of an SCR by referring to this equivalent
two-transistor circuit.

Fig. 2-2 Two-transistor analogy of PNPN structure

When the gate is open and a forward voltage is applied between the anode and cathode (terminal A is
positive with respect to terminal K), the SCR is in off state due to the absence of base currents of
transistors Q1 and Q2- Such a situation only a small leakage current flows through the SCR.

If a positive potential is applied to the SCR gate, the potential VG will produce a gate current IG to turn
Q2 on (IG=IB2). The collector current of Q2 will then rise to a value sufficiently large to turn Q1 on
(IB1=IC2). As Q1 turns on, IC1 will increase, resulting in a corresponding increase in I B2- The increase in
base current for Q2 will result in a further increase in I C2- The net result is a regenerative increase in the
collector current of each transistor. Transistors Q1 and Q2 will conduct into saturation in a very short
time. The resulting anode-to-cathode resistance of an SCR is then very small so that a very large current
flows from the anode to cathode. Thus the SCR is turned on. Obviously, removal of the gate signal will not
result in the SCR turning off as long as there is sufficient forward anode-to-cathode voltage to maintain a
holding current IH. In other words, once conduction has been initiated, the gate signal serves no useful
purpose and may be removed. The methods used to turn off the SCR will be introduced later.

SCR Characteristic Curves

The basic anode characteristic of the SCR is provided in Fig. 2-3 for I G = 0. The reverse characteristic
in quadrant III (the anode to the negative, the cathode to the positive) is similar to the characteristic of
a diode operating in reverse bias. The peak reverse breakdown voltage (PRV) is defined as the
maximum instantaneous negative voltage that should ever be applied at the anode under any
conditions. The value of PRV depends on the coefficient of resistance of semiconductor and the
thickness of base of PNP transistor. When the applied reverse voltage is smaller than the PRV value,
the SCR is in off state and only small leakage current flows in the anode. If the reverse voltage is
greater than PRV, a large amount of current will flow and result in the damage to the SCR.

Fig. 2-3 SCR characteristics

The characteristic of the SCR operating in the forward region is shown in quadrant I of Fig. 2-3. When a
small voltage is applied between the anode and cathode, the SCR is not turned on and only small leakage
current flows in the anode. As the voltage between the anode and cathode (V AK) is increased to a specified
value called VBO, the SCR is turned on and a large amount of current flows in the anode. The V BO is known
as the forward break over voltage of the SCR at IG = 0.

The value of VBO depending n the  values of internal transistors and PRV value is given by

VBO = PRV(1 - 1 - 2)1/n ……………………… (2-1)

Where n is constant and lies between 2 and 3 for a silicon material. From Eq. (2-1), it is seen that the
magnitude of VBO should be slightly smaller than the PRV rating for an ideal SCR. In practical
applications, these two values are usually considered as the same.
Consider the SCR conducting in its forward conduction region. A decrease in the anode voltage V AK will
cause the anode current to decrease, as indicated on the line a of Fig. 2-3. When the anode current is
smaller than the current value at point P, the SCR is therefore turned off. The current value at P is called
the holding current, IHO, which is the minimum anode current to maintain the SCR in on state.

Fig. 2-4 SCR output characteristics with variable gate current

The SCR characteristic curve in Fig. 2-4is plotted with the gate open. If the external signal is applied to the
gate, the gate current will change the forward break over voltage of the SCR. As shown in Fig. 2-4, an
increase in IG will cause the VBO to decrease. That is, the greater the I G, the smaller the VBO. In other
words, the magnitude of gate current determines the voltage to fire the SCR.

Figure 2-5

Figure 2-7
 Figure 2-7

(b) DIAC AND TRIAC CHARACTERISTICS

Objectives
We will learn followings…
 Understanding and measuring the characteristics of TRIAC.
 Understanding and measuring the characteristics of DIAC.
 Performing the DIAC-TRIAC phase control circuit.

Apparatus:
 1 – Power Supply Unit IT9000
 1 – Module IT-9003
 1 – Analog Multi-meter
 1 – Dual-Trace Oscilloscope

Theory:
TRIAC Characteristics
The triode AC switch (TRIAC), sometimes called triggering bi-directional thyristor, is a three-
terminal semiconductor device used in AC power control applications. The operation of the
TRIAC in AC circuits can be considered as inverse parallel SCRs in AC circuits. Either positive
or negative voltage is applied to MT2 terminal, the TRIAC can be turned on by applying the gate
triggering signal. There are many types of TRIAC available in market such as low power type of
RCA 2N5754 (2-4A, 100V) and high power type of RCA 40924 (80A, 600V).
The TRIAC device was developed by General Electric. Fig. 2-7 (a) shows the cross section of
TRIAC. The region between terminals MT2 and MT1 is a PNPN switch in parallel with an NPNP
switch. The circuit symbol of TRIAC is shown in Fig. 2-7(b). Its terminals are main terminal #2
(MT2) or anode 2, main terminal #1 (MT1) or anode 1, and gate. A practical structure of TRIAC
is shown in Fig. 2-8.
 Fig. 2-8 TRIAC (a) structure, (b) circuit symbol

Fig. 2-8 Typical TRIAC structure

(a) MT2 positive or negative, gate circuit open In this mode the junction P1-N1 and N1-P2 re
reverse-biased. The TRIAC is turned off.
(b) MT2 positive, positive gate current In this mode the TRIAC behaves strictly like an SCR.
Active parts are P1-N1- P2-N2 and the gate current flows through G-P2-N2-MT1.
(c) MT2 positive, negative gate current Operation is analogous to the junction gate thyristor.
P1-N1-P2-N2 is the main structure, with N3 acting as the junction gate region
(d) MT2 negative, positive gate current P2-N2 is forward biased and injects electrons, which
are collected by P2-N1. P2-N1 becomes more forward biased. Current through the P2-N1-P1-
N4 portion increases and this section switches on. This mode, too, is also analogous to remote
gate operation.
(e) MT2 negative, negative gate current Remote gate mode, P2-N1-P1-N4 is the main
structure, with junction P2-N3 injecting electrons, which are collected by the P2-N1 junction.

TRIAC Characteristics
The TRIAC performs the function of the inverse parallel SCRs configuration. Fig. 2- 9(a)
shows the anode characteristic of the TRIAC under zero gate current condition. The TRIAC
will block voltage of either polarity so long as the magnitude of the voltage is less the
forward break over voltage, VBOR or VFOM. The anode current is limited to a very low
leakage level, usually less than a few milli amperes under forward blocking conditions. There
is no reverse voltage specification for the TRIAC.
Parameters VFOM, PFV, VDRM, and VBR are defined exactly the same as SCR
pacifications.

Fig. 2-9 TRIAC anode characteristics

Fig 2-10
Fig 2-11

Fig 2-12

Fig 2-13
Fig 2-14

Fig 2-15
 Department of Electrical Engineering
Riphah International University, Faisalabad Campus,
Faisalabad, Pakistan

Procedure:
 Department of Electrical Engineering
Riphah International University, Faisalabad Campus,
Faisalabad, Pakistan

Observations:

Department of Electrical Engineering

Riphah International University, Faisalabad Campus,
Faisalabad, Pakistan
Observations:

Conclusion: