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    Tranzitor J3Y

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    Lu Hoa
    This document provides specifications for an NPN transistor in an SOT-23 package. It lists the transistor's key electrical ratings and characteristics, including a maximum collector current of 0.5A, storage temperature range of -55°C to 150°C, and typical DC current gain values between 120-350. The transistor's part number is marked as J3Y.

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    Tranzitor J3Y

    Uploaded by

    Lu Hoa
    108 views2 pages
    This document provides specifications for an NPN transistor in an SOT-23 package. It lists the transistor's key electrical ratings and characteristics, including a maximum collector current of 0.5A, storage temperature range of -55°C to 150°C, and typical DC current gain values between 120-350. The transistor's part number is marked as J3Y.

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    This document provides specifications for an NPN transistor in an SOT-23 package. It lists the transistor's key electrical ratings and characteristics, including a maximum collector current of 0.5A, storage temperature range of -55°C to 150°C, and typical DC current gain values between 120-350. The transistor's part number is marked as J3Y.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    108 views2 pages

    Tranzitor J3Y

    Uploaded by

    Lu Hoa
    This document provides specifications for an NPN transistor in an SOT-23 package. It lists the transistor's key electrical ratings and characteristics, including a maximum collector current of 0.5A, storage temperature range of -55°C to 150°C, and typical DC current gain values between 120-350. The transistor's part number is marked as J3Y.

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    S8050 TRANSISTOR (NPN) SOT-23

    FEATURES
    1. BASE
    z Complimentary to S8550 2. EMITTER
    z Collector Current: IC=0.5A 3. COLLECTOR

    MARKING: J3Y

    MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Symbol Parameter Value Units
    VCBO Collector-Base Voltage 40 V
    VCEO Collector-Emitter Voltage 25 V
    VEBO Emitter-Base Voltage 5 V
    IC Collector Current -Continuous 0.5 A
    PC Collector Dissipation 0.3 W
    Tj Junction Temperature 150 ℃
    Tstg Storage Temperature -55-150 ℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V

    Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V

    Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V

    Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA

    Collector cut-off current ICEO VCB=20V , IE=0 0.1 μA

    Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA

    HFE(1) VCE=1V, IC= 50mA 120 350


    DC current gain
    HFE(2) VCE=1V, IC= 500mA 50

    Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V

    Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V

    VCE=6V, IC= 20mA


    Transition frequency fT 150 MHz
    f=30MHz
    CLASSIFICATION OF hFE(1)
    Rank L H
    Range 120-200 200-350
    Typical Characteristics S8050

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