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    Transistor (NPN) : 1. Emitter

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    Natalia Kuklina
    This document provides specifications for an NPN transistor. It lists maximum ratings for voltage, current, power and temperature. It also lists typical electrical characteristics including breakdown voltages, current gains and cutoff currents. Finally, it provides a classification of current gain ranges.

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    © All Rights Reserved
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    Transistor (NPN) : 1. Emitter

    Uploaded by

    Natalia Kuklina
    76 views2 pages
    This document provides specifications for an NPN transistor. It lists maximum ratings for voltage, current, power and temperature. It also lists typical electrical characteristics including breakdown voltages, current gains and cutoff currents. Finally, it provides a classification of current gain ranges.

    Original Title

    D882

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    This document provides specifications for an NPN transistor. It lists maximum ratings for voltage, current, power and temperature. It also lists typical electrical characteristics including breakdown voltages, current gains and cutoff currents. Finally, it provides a classification of current gain ranges.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    76 views2 pages

    Transistor (NPN) : 1. Emitter

    Uploaded by

    Natalia Kuklina
    This document provides specifications for an NPN transistor. It lists maximum ratings for voltage, current, power and temperature. It also lists typical electrical characteristics including breakdown voltages, current gains and cutoff currents. Finally, it provides a classification of current gain ranges.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    D882 TRANSISTOR ( NPN )

    TO-126

    1. EMITTER

    2. COLLECTOR

    3. BASE 123

    MAXIMUM RATINGS* TA=25℃ unless otherwise noted

    Symbol Parameter Value Units


    VCBO Collector-Base Voltage 40 V
    VCEO Collector-Emitter Voltage 30 V
    VEBO Emitter-Base Voltage 6 V
    IC Collector Current -Continuous 3 A
    PD Total Device Dissipation 1.25 W
    TJ Junction Temperature 150 ℃
    Tstg Junction and Storage Temperature -55-150 ℃

    *These ratings are limiting values above which the serviceability of any semiconductor device may be
    impaired.
    ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO Ic=100uA ,IE=0 40 V

    Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 30 V

    Emitter-base breakdown voltage V(BR)EBO IE= 100 mA ,IC=0 6 V

    Collector cut-off current ICBO VCB=40 V , IE=0 1 uA

    Collector cut-off current ICEO VCE=30 V , IB=0 10 uA

    Emitter cut-off current IEBO VEB=6V , IC=0 1 uA

    hFE(1) VCE= 2V, IC= 1A 60 400


    DC current gain
    hFE(2) VCE=2V, IC= 100mA 32

    Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V

    Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V


    VCE=5 V, IC=0.1mA
    Transition frequency fT 50 MHz
    f = 10MHz

    CLASSIFICATION OF hFE(1)

    Rank R O Y GR

    Range 60-120 100-200 160-320 200-400

    Web Site: WWW.PS-PFS.COM


    D882 TRANSISTOR ( NPN )

    Rank R O Y GR

    Range 60-120 100-200 160-320 200-400

    Web Site: WWW.PS-PFS.COM

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