www.osram-os.

com

Application Note No. AN040

Comparison of simple LED circuits for low power LEDs

Application Note
Valid for:
visible LEDs; Infrared Emitters

Abstract
Light emitting diodes (LEDs) are used in a broad array of applications such as cars, mobile
devices, medical applications and illumination. To combine more LEDs in an application is
not uncommon. In general, operation with a constant power source (or with a LED driver) is
recommended. For low power LEDs sometimes more cost-efficient implementations are
chosen. Hence this application note compares different LED circuits, explains the
advantages, gives examples and recommendations.

Authors: Retsch Stefanie / Hofmann Markus

2020-06-02 | Document No.: AN040 1 / 13

www.osram-os.com

Table of contents
A. Basic electrical LED information .............................................................................2
Electrical characteristics of the LED ...................................................................2
Forward voltage grouping ...................................................................................3
B. LED circuits .............................................................................................................4
Simulation parameters ........................................................................................5
Circuit topology 1: serial circuit ..........................................................................5
Circuit topology 2: matrix circuit .........................................................................7
Advantages and disadvantages of the different circuit topologies ....................9
LED circuits recommendation ..........................................................................10
C. Thermal considerations ........................................................................................12
D. Conclusion ............................................................................................................12

A. Basic electrical LED information

Electrical characteristics of the LED

LEDs are optoelectronic semiconductors with an pn-junction that converts
electrical energy into light when forward voltage is applied. The color of the light
depends on the semiconductor materials used. The characteristics of the LED
forward voltage have the following properties:
• A forward voltage threshold must be reached before the diode will start
conducting
• LEDs show a negative temperature coefficient (NTC) behavior
• The LED is non-conductive in reverse
• LEDs have a nonlinear I-V characteristic (Figure 1)

2020-06-02 | Document No.: AN040 2 / 13

www.osram-os.com

Figure 1: Sketched example for LEDs nonlinear I-V characteristic

IF [mA]

IR

Red

Yellow

Green

Blue

1V VF [V]

LEDs are very sensitive to a high forward current. Therefore, an LED should never
be connected directly to the supply voltage. They should always be connected
in series within a current controlled or current limited circuit. Figure 2 shows an
example of a simple basic circuit.

Figure 2: Example of a simple basic circuit with a LED

IF

VR RV
+

V
-
VF LED

Forward voltage grouping

In order to meet the required standards of light-output it may be necessary to
segregate the forward voltage of the LEDs into groups (binning). Most LEDs are
usually binned at a certain grouping current. The binning always refers to a
certain junction temperature of the chip. By tightly controlling the parameter of
voltage in such a way, a better uniformity in appearance is achieved in the end
application.
The list below shows exemplary the voltage groups and values of the Power
TOPLED® LA E6xF:
• 3A: Vf = 1.90 V – 2.05 V, (Vf typ = 1.975 V)

• 3B: Vf = 2.05 V – 2.20 V, (Vf typ = 2.125 V)

• 4A: Vf = 2.20 V – 2.35 V, (Vf typ = 2.275 V)

• 4B: Vf = 2.35 V – 2.50 V, (Vf typ = 2.425 V)

2020-06-02 | Document No.: AN040 3 / 13

www.osram-os.com

But even LEDs with identical binning values can have different I-V
characteristics. Figure 3 shows an example with a binning current of 150 mA. As
can be seen, all three LEDs have the identical binning values, but show a
different I-V characteristic.

Figure 3: Sketched example same binning values but different I-V characteristic
IF [mA]

Binning current

VF [V]

B. LED circuits
There are different possibilities to operate LEDs in applications.
It is recommended to operate LEDs with constant current and pulse width
modulation (PWM), as shown in Figure 4.Constant power sources ensure a
constant operating current at a defined operating point. LED drivers offer the
constant power source as an integrated solution. For more information on
operating LEDs with pulse width modulation (PWM), please refer to Application
Note: “Dimming InGaN LEDs”.

Figure 4: LED circuit with constant power source

VCC

constant power
source

D1 Dn

D6 Dn+5

2020-06-02 | Document No.: AN040 4 / 13

www.osram-os.com

In practice, for low-cost applications and using low power LEDs, circuits without
a constant power source are often implemented. In the following two circuit
topologies are presented:
• Circuit topology 1: Serial Circuit with different LED strings in parallel
• Circuit topology 2: Matrix Circuit with one resistor for the complete circuit
To demonstrate LED performance in a circuit, for each topology two simulations
have been performed:
• a typical simulation with all LEDs performing normally
• a simulation with one failed LED in the circuit from a string with typical
forward voltage

Simulation parameters
For each circuit simulation constant proceeding parameters are considered:

1. Sixteen Power TOPLED® (LA E6xF) LEDs with a voltage group 3B

(Vf = 2.125 V @ 50 mA) have been used, wherein four strings are arranged
in series and of those four LEDs are in parallel.
2. The LED strings for each circuit have been arranged from left to right in a
minimum, typical (definition: mid), maximum arrangement of forward
voltage. This equates to the following forward voltages:
• left most string: 2.05 V @ 50 mA
• middle two strings: 2.125 V @ 50 mA
• right most string: 2.20 V @ 50 mA
3. The LEDs have been driven by a voltage source of 12 V DC.
4. The resistors have been chosen so that for the typical voltage bin of 3B
(Vf = 2.125 V @ 50 mA), a current of 35 mA flows for every LED. (The
resistor values are theoretically calculated.)
5. The simulations have been carried out at an ambient temperature of 25 °C.
6. The simulation results were recorded instantaneously, after having had
current applied directly from a power supply.
Please note that thermal effects, though not been taken into consideration for the
individual simulations, are discussed, generally, at chapter "C. Thermal
considerations".

Circuit topology 1: serial circuit

A serial circuit provides a lot of advantages but has also one disadvantage that
should be considered when decided for a serial design.
Serial circuit simulation. Figure 5 shows the simulation of a serial circuit. The
forward current of the simulated LEDs is 34.9 mA (~ 35 mA) at the middle two

2020-06-02 | Document No.: AN040 5 / 13

www.osram-os.com

strings. For the LEDs from the lower forward voltage group, the forward current
is 36.5 mA. For the LEDs from the upper limit of the forward voltage group, the
forward current is 33.4 mA. In the worst case, the overall current variation in this
circuit is 35 mA ± ~ 5 %.
The subsequent effect of temperature on appearance is less profound in this
circuit than in circuit topology 2 (matrix circuit) due to less variation in the forward
current of the LEDs.

Figure 5: Simulation of a serial circuit

VCC

36.5 mA R1 34.9 mA R2 34.9 mA R3 33.4 mA R4

100 100 100 100

36.5 mA 34.9 mA 34.9 mA 33.4 mA

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

36.5 mA 34.9 mA 34.9 mA 33.4 mA

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

36.5 mA 34.9 mA 34.9 mA 33.4 mA

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

36.5 mA 34.9 mA 34.9 mA 33.4 mA

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

Serial circuit, one LED failed. The simulation in Figure 6 shows that the failure
of one LED causes the remaining LEDs in that string to fail. As a result, the total
current drops from 140 mA to 105 mA, approximately, but the current of the
LEDs in the remaining strings is unaffected.

2020-06-02 | Document No.: AN040 6 / 13

www.osram-os.com

Figure 6: Simulation of a serial circuit, one LED failed

VCC

36.5 mA R1 34.9 mA R2 0 mA R3 33.4 mA R4

100 100 100 100

36.5 mA 34.9 mA 33.4 mA

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

36.5 mA 34.9 mA 0 mA 33.4 mA

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

36.5 mA 34.9 mA 0 mA 33.4 mA

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

36.5 mA 34.9 mA 0 mA 33.4 mA

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

Circuit topology 2: matrix circuit

Matrix connections are the easiest way to design redundant and reliable
systems. It works quite well for low and mid power LEDs with tight VF-Binning
e.g. 100 mV or even lower. It is beneficial to design circuits between three and
six strings.
Before connecting high power LEDs in a certain matrix combination, a closer
look to the I-V characteristics has to be done. Also worst case simulations can
help to estimate the circuit behavior in terms of current distribution and resulting
module homogeneity.
Matrix circuit with one resistor for the complete circuit. As the simulation in
Figure 7 shows the forward current for the LEDs with the typical forward voltage
is 35.3 mA (~ 35 mA). For the LEDs from the lower forward voltage group, the
forward current is 48.3 mA. For the LEDs from the upper limit of the voltage
group, the forward current is 28.2 mA. In the worst case, the overall current
variation in this circuit is 35 mA ± ~ 40 %. This leads to a variation of the
brightness which could be seen by the customer.
The forward voltages of the LEDs have a negative temperature coefficient.
Accordingly, as the temperature increases, the forward voltage decreases while
the forward current increases. In the case of this simulation, the current for the
LEDs with 48.3 mA would increase more than for the LEDs with 28.2 mA. The
variation of current within the complete circuit would therefore increase.

2020-06-02 | Document No.: AN040 7 / 13

www.osram-os.com

Figure 7: Simulation of a matrix circuit with one resistor for the complete circuit
VCC
147.1 mA
R1
26

48.3 mA 35.3 mA 35.3 mA 28.2 mA

D1 D5 D9 D13

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

48.3 mA 35.3 mA 35.3 mA 28.2 mA

D2 D6 D10 D14

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

48.3 mA 35.3 mA 35.3 mA 28.2 mA

D3 D7 D11 D15

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

48.3 mA 35.3 mA 35.3 mA 28.2 mA

D4 D8 D12 D16

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

Matrix circuit with one resistor for the complete circuit, one LED failed.
When one LED fails like in simulation in Figure 8, two effects can be observed:
• First, the total current flowing through the complete matrix drops slightly as
the equivalent resistance of the circuit increases.
• Second, and more significantly, the three LEDs that are parallel to the failed
LED pull more current. In the worst case this means that a LED from the
lower limit of the voltage group will pull 63.6 mA.
Due to the small change in current registered by the failure of a single LED, the
failure can not be easily or economically detected by current sense; only the
failure of the complete circuit can be detected.

2020-06-02 | Document No.: AN040 8 / 13

www.osram-os.com

Figure 8: Simulation of a matrix circuit with one resistor for the complete circuit, one
LED failed
VCC
145.2 mA
R1
26

63.6 mA 45.6 mA 36.0 mA

D1 D5 D13

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

47.7 mA 34.9 mA 34.9 mA 27.8 mA

D2 D6 D10 D14

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

47.7 mA 34.9 mA 34.9 mA 27.8 mA

D3 D7 D11 D15

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

47.7 mA 34.9 mA 34.9 mA 27.8 mA

D4 D8 D12 D16

LA_E6xF-typ-3B-min LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-mid LA_E6xF-typ-3B-max

Advantages and disadvantages of the different circuit topologies

As the two topologies shows, each has its advantages and disadvantage.
Accordance with the requirements of the application, the appropriate solution
should be selected. Table 1 gives an overview of the advantage and
disadvantages of each topology.

Table 1: Advantages and disadvantages of the different circuit topologies

Serial circuit Matrix circuit

The current for each string can be If one LED fails, the remaining LEDs still
adjusted very accurately by the resistors operate

Simple circuit design, comparatively low Simple circuit design, comparatively low
Advantages

cost for resistors cost for the resistors

The failure of one LED string will not affect

the current of the remaining LED strings

Due to the significant change in current

registered by the failure of a complete
string of LEDs, complex failure detection
using current sense is made possible

2020-06-02 | Document No.: AN040 9 / 13

www.osram-os.com

Table 1: Advantages and disadvantages of the different circuit topologies

Serial circuit Matrix circuit

The failure of a single LED will cause the In the worst case the current distribution
remaining LEDs in that string to fail can be very unsymmetrical. Because of the
differences in current, the LEDs do not
experience a consistent rise in temperature
across the circuit

The failure of one LED leads to an

Disadvantages

overdriving of the remaining LEDs to which

it was in parallel. This effect is increased
when fewer diodes are in parallel, and,
when combined with the effects of
temperature referenced above, will
compromise uniformity to the rest of the
circuit and shortened overall life

Due to the small change in current

registered by the failure of a single LED, the
failure can not be easily or economically
detected by current sense; only the failure
of the complete circuit can be detected

LED circuits recommendation

To connect LEDs in parallel, the following design rules should be considered:
1. Use always LEDs of the same type and same manufacturer
2. Use Vf-binned LEDs
• out of simulation and experience a 100 mV binning per chip is mandatory
to ensure parallel operation for low and mid power LEDs.
• for high power LEDs the same rules have to be followed but it is
advisable to double check the design by our Application-Engineering-
Team
3. Try to connect several LEDs in series and than the resulting strings in
parallel
• the serial LED connection will improve the statistical string voltage
• more than 6 LEDs in series will not further improve the string voltage
averaging
4. Try to have so many strings parallel to ensure the max. allowed LED current
will not be exceed in case you lose one string

2020-06-02 | Document No.: AN040 10 / 13

www.osram-os.com

5. to minimize the voltage mismatch operate the LEDs around the binning
current
6. Do not exceed the operation current per LED to have enough buffer
IOP < 0.7 Imax

7. To avoid current hogging an appropriate thermal design is needed. Try to

get parallel connected LEDs or string close to each other. In case there is
an mismatch the one LED or the one string will heat up the other one.
Recommended combinations for this topology (Figure 9) would be a two string
solution for a application with focus on efficacy or a 4 strings solution for a well
balanced setting. More than 4 strings are possible but not recommended.

Figure 9: Recommended combinations for LEDs in parallel

RV RV RV RV RV RV RV RV

D1 D7 D1 D7 D13 D19 D1 Dn

D6 D12 D6 D12 D18 D24 D6 Dn+5

2-strings in parallel: 4-strings in parallel: More than 4 strings in

Very common for Very well balanced combi- parallel:
moderate current nation possible but not necessarily
with focus on recommended
efficacy

2020-06-02 | Document No.: AN040 11 / 13

www.osram-os.com

C. Thermal considerations
The thermal design must be considered for all LED circuits. The higher the
junction temperature Tj rises, the lower the forward voltage VF gets, causing the
current in the circuit to increase. The change in forward voltage VF as a function
of the junction temperature Tj can be seen in the data sheet (Figure 10 shows an
example of the data sheet entry of the LA E6xF).

Figure 10: Example of the forward voltage characteristic curve

D. Conclusion
Essentially, there are two ways to design a cluster of LEDs, a serial circuit or a
matrix circuit with one resistor for the entire circuit. Each of these possibilities
has advantages and disadvantages (see Table 1) that will be dependent upon the
end application and the respective requirements therein. For each circuit
topology, especially so for the matrix circuit (Figures 7 and 8), the distribution of
current within the circuit is critical. The circuit must be designed that the LEDs
do not get overdriven and that the LEDs do not overheat: increasing current
results in increasing temperature and this again results in increasing current until
such an equilibrium is reached. It is exacerbated in matrix circuits by having just
the single resistor for the entire circuit.

2020-06-02 | Document No.: AN040 12 / 13

www.osram-os.com

Don't forget: LED Light for you is your place to

be whenever you are looking for information or
worldwide partners for your LED Lighting
project.

www.ledlightforyou.com

ABOUT OSRAM OPTO SEMICONDUCTORS

OSRAM, Munich, Germany is one of the two leading light manufacturers in the world. Its subsidiary, OSRAM
Opto Semiconductors GmbH in Regensburg (Germany), offers its customers solutions based on semiconduc-
tor technology for lighting, sensor and visualization applications. OSRAM Opto Semiconductors has produc-
tion sites in Regensburg (Germany), Penang (Malaysia) and Wuxi (China). Its headquarters for North America
is in Sunnyvale (USA), and for Asia in Hong Kong. OSRAM Opto Semiconductors also has sales offices th-
roughout the world. For more information go to www.osram-os.com.

DISCLAIMER
PLEASE CAREFULLY READ THE BELOW TERMS AND CONDITIONS BEFORE USING THE INFORMA-
TION SHOWN HEREIN. IF YOU DO NOT AGREE WITH ANY OF THESE TERMS AND CONDITIONS, DO
NOT USE THE INFORMATION.
The information provided in this general information document was formulated using the utmost care; howe-
ver, it is provided by OSRAM Opto Semiconductors GmbH on an “as is” basis. Thus, OSRAM Opto Semicon-
ductors GmbH does not expressly or implicitly assume any warranty or liability whatsoever in relation to this
information, including – but not limited to – warranties for correctness, completeness, marketability, fitness
for any specific purpose, title, or non-infringement of rights. In no event shall OSRAM Opto Semiconductors
GmbH be liable – regardless of the legal theory – for any direct, indirect, special, incidental, exemplary, con-
sequential, or punitive damages arising from the use of this information. This limitation shall apply even if
OSRAM Opto Semiconductors GmbH has been advised of possible damages. As some jurisdictions do not
allow the exclusion of certain warranties or limitations of liabilities, the above limitations and exclusions might
not apply. In such cases, the liability of OSRAM Opto Semiconductors GmbH is limited to the greatest extent
permitted in law.
OSRAM Opto Semiconductors GmbH may change the provided information at any time without giving notice
to users and is not obliged to provide any maintenance or support related to the provided information. The
provided information is based on special conditions, which means that the possibility of changes cannot be
precluded.
Any rights not expressly granted herein are reserved. Other than the right to use the information provided in
this document, no other rights are granted nor shall any obligations requiring the granting of further rights be
inferred. Any and all rights and licenses regarding patents and patent applications are expressly excluded.
It is prohibited to reproduce, transfer, distribute, or store all or part of the content of this document in any form
without the prior written permission of OSRAM Opto Semiconductors GmbH unless required to do so in ac-
cordance with applicable law.

OSRAM Opto Semiconductors GmbH

Head office:

Leibnizstr. 4
93055 Regensburg
Germany
www.osram-os.com

2020-06-02 | Document No.: AN040 13 / 13