PD - 91503D

IRFP150N
HEXFET Power MOSFET
l l l l l

Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated

VDSS = 100V
RDS(on) = 0.036W

G S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

ID = 42A

TO-247AC

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Max.
42 30 140 160 1.1 20 420 22 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)

Units
A W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RCS RJA
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Typ.
0.24

Max.
0.95 40

Units
C/W

Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

07/15/02

IRFP150N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

RDS(on) VGS(th) gfs

IDSS IGSS

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-to-Source Leakage Current

Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss

Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min. 100 2.0 14

Typ. 0.11 11 56 45 40
5.0 13

1900 450 230

Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.036 VGS = 10V, ID = 23A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V, See Fig. 6 and 13 VDD = 50V ID = 22A ns RG = 3.6W RD = 2.9W See Fig. 10 , Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD trr Qrr ton Notes:

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol 42 showing the A G integral reverse 140 S p-n junction diode. 1.3 V TJ = 25C, IS =23A, VGS = 0V 180 270 ns TJ = 25C, IF = 22A 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Pulse width 300s; duty cycle 2%.

Uses IRF1310N data and test conditions Uses IRF1310N data and test conditions.

Starting TJ = 25C, L = 1.7mH

RG = 25W , IAS = 22A. (See Figure 12)

ISD 22A, di/dt 180A/s, VDD V(BR)DSS,

TJ 175C

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1000

100

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

1000

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

100

10

10

4.5V

4.5V
20us PULSE WIDTH TJ = 25 oC
1 10 100

1 0.1

1 0.1

20us PULSE WIDTH TJ = 175 o C

1 10 100

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

3.0

R DS(on) , Drain-to-Source On Resistance (Normalized)

ID = 36A

I D , Drain-to-Source Current (A)

2.5

100

TJ = 25 o C TJ = 175 o C

2.0

1.5

10

1.0

0.5

1 4.0

5.0

6.0

7.0

8.0

9.0

10.0

0.0 -60 -40 -20

VGS = 10V
0 20 40 60 80 100 120 140 160 180

VGS , Gate-to-Source Voltage (V)

TJ , Junction Temperature (o C)

Fig 3. Typical Transfer Characteristics

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Fig 4. Normalized On-Resistance Vs. Temperature

3

IRFP150N

3500

3000

VGS , Gate-to-Source Voltage (V)

VGS = Ciss = Crss = Coss =

0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd

20

ID = 22A VDS = 80V VDS = 50V VDS = 20V

16

C, Capacitance (pF)

2500

Ciss
2000

12

1500

1000

Coss Crss

500

0 1 10 100

0 0 20 40 60

FOR TEST CIRCUIT SEE FIGURE 13

80 100 120

VDS , Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

1000

ISD , Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED BY RDS(on)

I D , Drain Current (A)

100

100

10us

10

100us

10

1ms

0.1 0.2

V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6

1 1

TC = 25 o C TJ = 175 o C Single Pulse

10

10ms

100

1000

VSD ,Source-to-Drain Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

4

Fig 8. Maximum Safe Operating Area

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IRFP150N

50

VDS
40

RD

VGS RG

D.U.T.
+

I D , Drain Current (A)

-VDD

30

10V
20
Pulse Width 1 s Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

10

VDS 90%
0 25 50 75 100 125 150 175

TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Case Temperature

Fig 10b. Switching Time Waveforms

10

Thermal Response (Z thJC )

1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1

0.01 0.00001

0.0001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP150N
1000

EAS , Single Pulse Avalanche Energy (mJ)

15V

800

ID 9.0A 16A BOTTOM 22A TOP

VDS

D R IVE R

600

RG
20V

D .U .T
IA S tp

+ V - DD

400

0 .01

200

Fig 12a. Unclamped Inductive Test Circuit

0 25 50 75 100 125 150 175

V (B R )D S S tp

Starting TJTj, Junction Temperature (C) ( Starting , Junction Temperature o C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F .3F

10 V
QGS VG QGD
VGS
3mA

D.U.T.

+ V - DS

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

6

Fig 13b. Gate Charge Test Circuit

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IRFP150N

Peak Diode Recovery dv/dt Test Circuit

D.U.T

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFP150N Package Outline

TO-247AC Outline Dimensions are shown in millimeters (inches)
15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) 0.25 (.010) M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C 14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145)
LE A D A S S IG N M E N TS 1 2 3 4 G A TE D R A IN SOURCE D R A IN

-D D B M 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4

2X

5.50 (.217) 4.50 (.177)

NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TLIN E T O -247-A C .

2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X

1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C A S

0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087)

Part Marking Information

TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0 W ITH A S S E M B L Y LOT CODE 3A1Q
A

IN TE R N A TIO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE

PART NUMBER IR F P E 3 0 3A 1 Q 9 3 0 2 D A TE C O D E (Y YW W ) YY = YEAR W W W EEK

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/02

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