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    Nte 56049

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    alfredo cedeño
    The document describes two TRIAC components - the NTE56049 and NTE56050. They are low logic level TRIACs in a TO-220 package for bidirectional switching and phase control applications. They can interface directly with microcontrollers. The document provides maximum ratings and electrical characteristics for the components.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Nte 56049

    Uploaded by

    alfredo cedeño
    9 views2 pages
    The document describes two TRIAC components - the NTE56049 and NTE56050. They are low logic level TRIACs in a TO-220 package for bidirectional switching and phase control applications. They can interface directly with microcontrollers. The document provides maximum ratings and electrical characteristics for the components.

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    Nte56049

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    nte56049

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    The document describes two TRIAC components - the NTE56049 and NTE56050. They are low logic level TRIACs in a TO-220 package for bidirectional switching and phase control applications. They can interface directly with microcontrollers. The document provides maximum ratings and electrical characteristics for the components.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views2 pages

    Nte 56049

    Uploaded by

    alfredo cedeño
    The document describes two TRIAC components - the NTE56049 and NTE56050. They are low logic level TRIACs in a TO-220 package for bidirectional switching and phase control applications. They can interface directly with microcontrollers. The document provides maximum ratings and electrical characteristics for the components.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    NTE56049 & NTE56050

    TRIAC, 4A Low Logic Level

    Description:
    The NTE56049 and NTE56050 are glass passivated, Low Logic Level TRIACs in a TO220 type pack-
    age designed for use in general purpose bidirectional switching and phase control applications.
    These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and
    other low power gate trigger circuits.

    Absolute Maximum Ratings:


    Repetitive Peak Off–Sate Voltage (Note 1), VDRM
    NTE56049 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
    NTE56050 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
    RMS On–State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
    Non–Repetitive Peak On–State Current, ITSM
    (Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
    t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
    t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A
    I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec
    Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
    (ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/µs)
    MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
    MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
    MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
    MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
    Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
    Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
    Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
    Thermal Resistance, Junction–to–Mounting Base, RthJMB
    Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W
    Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W
    Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
    Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
    but the TRIAC may switch to the on–State. The rate–of–rise of current should not exceed
    3A/µs.
    Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Static Characteristics
    Gate Trigger Current
    MT2 (+), G (+) IGT VD = 12V, IT = 0.1A – 2.0 5 mA
    MT2 (+), G (–) – 2.5 5 mA
    MT2 (–), G (–) – 2.5 5 mA
    MT2 (–), G (+) – 5 10 mA
    Latching Current
    MT2 (+), G (+) IL VD = 12V, IT = 0.1A – 1.6 10 mA
    MT2 (+), G (–) – 4.5 15 mA
    MT2 (–), G (–) – 1.2 10 mA
    MT2 (–), G (+) – 2.2 15 mA
    Holding Current IH VD = 12V, IT = 0.1A – 1.2 10 mA
    On–State Voltage VT IT = 5A – 1.4 1.7 V
    Gate Trigger Voltage VGT VD = 12V, IT = 0.1A – 0.7 1.5 V
    VD = 400V, IT = 0.1A, TJ = +125°C 0.25 0.4 – V
    Off–State Leakage Current ID VD = VDRMmax, TJ = +125°C – 0.1 0.5 mA
    Dynamic Characteristics
    Critical Rate–of–Rise of dVD/dt VDM = 67% VDRMmax, TJ = +125°C, – 5 – V/µs
    Off–State Voltage Exponential Waveform, RGK = 1kΩ
    Gate Controlled Turn–On Time tgt ITM = 6A, VD = VDRMmax, IG = 0.1A, – 2 – µs
    dIG/dt = 5A/µs

    .420 (10.67)
    Max

    .110 (2.79)

    MT2
    .147 (3.75) .500
    Dia Max (12.7)
    Max

    .250 (6.35)
    Max

    .500
    (12.7)
    Min
    .070 (1.78) Max

    MT1 Gate
    .100 (2.54) MT2

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