Nte 5461 - 68

NTE5461 thru NTE5468
Silicon Controlled Rectifier (SCR)

10 Amp
Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–
wave AC control applications such as motor controls, heating controls, and power supplies; or wher-
ever half–wave silicon gate–controlled, solid–state devices are needed. These devices are supplied
in a TO220 type package.
Features;
D Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation,
and Durability
D Blocking Voltage to 800 Volts
Absolute Maximum Ratings:

Peak Repetitive Reverse Voltage; Peak Repetitive Off–State Voltage (Note 1), VRRM, VDRM
NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Non–Repetitive Peak Reverse Voltage; Non–Repetitive Off–State Voltage, VRSM, VDSM
NTE5461 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
NTE5462 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125V
NTE5463 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5466 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5468 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
RMS Forward Current (All Conducting Angles, TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, TC = +80°C), ITSM . . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (TJ = –65° to +100°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . 40A2s
Forward Peak gate Power (t ≤ 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Note 1. VDRM and VRRM for all types can be applied on a continuous DC basis without incurring dam-
age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Reverse Blocking IDRM, Rated VDRM or VRRM TC = +25°C – – 10 µA
Current IRRM
TC = +100°C – – 2 mA
Instantaneous On–State Voltage VT ITM = 30A(Peak), Pulse Width ≤ 1ms, – 1.7 2.0 V
Duty Cycle ≤ 2%
Gate Trigger Current (Continuous DC) IGT VD = 12V, RL = 30Ω – 8 15 mA
Gate Trigger Voltage (Continuous DC) VGT VD = 12V, RL = 30Ω – 0.9 1.5 V
Holding Current IH Gate Open, VD = 12V, IT = 150mA – 10 20 mA
Gate Controlled Turn–On Time tgt VD = Rated VDRM, ITM = 2A, IGR = 80mA – 1.6 – µs
Circuit Commutated Turn–Off Time tq VD = VDRM, ITM = 2A, Pulse Width = 50µs, – 25 – µs
dv/dt = 200V/µs, di/dt = 10A/µs,
TC = +75°C
Critical Rate–of–Rise of Off–State dv/dt VD = Rated VDRM, Exponential Rise, – 100 – V/µs
Voltage TC = +100°C
.420 (10.67)
Max
.110 (2.79)
Anode
.147 (3.75) .500
Dia Max (12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode Gate
.100 (2.54) Anode

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Nte 5461 - 68

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NTE5461 thru NTE5468

Silicon Controlled Rectifier (SCR)

Absolute Maximum Ratings:

.100 (2.54) Anode

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