Ecd LR - 5

AIR UNIVERSITY
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
EXPERIMENT NO 5
Lab Title: (BJT) current mirror
Student Name: FAARAN AHMED Reg. No: 190424
Objective: To build and investigate the functionality of BJT current mirror.
LAB ASSESSMENT:
Excellent Good Average Satisfactory Unsatisfactory

Attributes
(5) (4) (3) (2) (1)
Objective and
implementation
Troubleshooting and
measurement
conclusion
Total Marks: Obtained Marks:
LAB REPORT ASSESSMENT:
Excellent Good Average Satisfactory Unsatisfactory

Attributes
(5) (4) (3) (2) (1)
Data presentation
Experimental results
Conclusion
Total Marks: Obtained Marks:
Date: 26/04/2021 Signature:

Experiment#05
BJT Current Mirror
Objectives:
 To build and investigate the functionality of BJT current mirror.
Equipment:
 Power Supply
 Digital Multimeter
 Transistor
 Resistors
Discussion:
A current mirror is a circuit designed to copy a current through one active device by
controlling the current in another active device of a circuit, keeping the output current constant
regardless of loading. The current being 'copied' can be, and sometimes is, a varying signal current.
Conceptually, an ideal current mirror is simply an ideal current amplifier. The current mirror is
used to provide bias currents and active loads to circuits.
Biasing in integrated circuit design is based on the use of constant current sources. On an
IC chip with a number of amplifier stages a constant DC current (called a reference current) is
generated at one location and is then replicated at various other locations for biasing the various
amplifier stages through a process known as current steering. This approach has the advantage that
the effort expended on generating a predictable and stable reference current usually utilizing a
precision resistor external to the chip need not be repeated for every amplifier stage furthermore
the bias currents of the various stages track each other in case of changes in powersupplies voltage
or in temperature.
Basic BJT Current Mirror:

In BJTs:
(1) The non-zero base current of BJT (or, equivalently, the finite β) causes an error in the current
transfer ratio of the bipolar ratio.
(2) The current transfer ratio is determined by the relative areas of emitter- base junction of
Q1 and Q2.
Let us first consider the case when β is sufficiently high so that we can neglect the base
currents. The reference current IREF is passed through the diode connected transistor Q1 and thus
establishes a corresponding voltage VBE, which in turn is applied between base and emitter of Q2.
Now if Q2 is matched to Q1 or more specifically, if the EBJ area of Q2 is the same as that
of Q1 and thus Q2 has the same scale current Is as Q1, then the collector current of Q2 will be
equal to that of Q1. That is:
Io = IREF
For this to happen, however, Q2 must be operating in the active mode, which in turn is
achieved so long as the collector voltage Vo is 0.3 V or so higher than that of the emitter.
To obtain a current transfer ratio other than unity, say m, we simply arrange that the area
of the EBJ of Q2 is m times that of Q1. In this case,
Io = mIREF
Basic BJT current mirror
In general, the current transfer ratio is given by:
Alternatively, if the area ratio m is an integer, one can think of Q 2 as equivalent to m

transistors, each matched to Q1 and connected in parallel.
Next we consider the effect of finite transistor β on the current transfer ratio. The key point
here is that since Q1 and Q2 are matched and have the same VBE, their collective currents will be
equal. The rest of the analysis is straight forward. A node equation at the collector of Q 1 yields:
Finally, since Io = Ic, the current transfer ratio can be found as:
Note that as β approaches infinity, Io/IREF approaches the nominal value of unity. For
typical value of β, however, the error in the current transfer ratio can be significant. For instance,
β = 100 results in a two percent error in the current ratio. Furthermore, the error due to the finite β
increases as the nominal current transfer ratio is increased.
The BJT mirror has a finite output resistance Ro:
LM394 Supermatch Pair:

The LM194 and LM394 are junction isolated ultra-well matched monolithic NPN transistor
pairs with an order of magnitude improvement in matching over conventional transistor pairs. The
pin diagram of metal can package is shown in figure below.
Pin diagram of LM394
Procedure:
(i) Make the connections on the bread board as shown in figure.
(ii) Apply VCC = 12 V
(iii) Use the supermatched pair LM394.
(iv) Now with the help of DMM, measure the output current and output voltage.
(v) Fill in the required values.



Circuit Diagram:
MIRROR VALUES OF CURRENT:
WHERE:
VCC = 12V
RREF = 1kΩ
RL= 1kΩ
At R = 1k:
• Iref = 10.9mA, Imir = 11.2mA

At R = 2k:
• Iref = 5.59mA, Imir = 5.48Ma
Required Parameters
I(ref) = 10.9mA
I(mir) = 11.2 mA
V(ce) = 725 mV
V(rl) = MAX
CONCLUSION:
In this lab we studied about BJT mirrors and their use. we observed that the
output and input both are same.

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AIR UNIVERSITY

DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING

Lab Title: (BJT) current mirror

Student Name: FAARAN AHMED Reg. No: 190424

Objective: To build and investigate the functionality of BJT current mirror.

Excellent Good Average Satisfactory Unsatisfactory

Total Marks: Obtained Marks:

LAB REPORT ASSESSMENT:

Excellent Good Average Satisfactory Unsatisfactory

Total Marks: Obtained Marks:

Date: 26/04/2021 Signature:

Basic BJT Current Mirror:

Basic BJT current mirror

In general, the current transfer ratio is given by:

Alternatively, if the area ratio m is an integer, one can think of Q 2 as equivalent to m

The BJT mirror has a finite output resistance Ro:

LM394 Supermatch Pair:

Pin diagram of LM394

MIRROR VALUES OF CURRENT:

• Iref = 10.9mA, Imir = 11.2mA

• Iref = 5.59mA, Imir = 5.48Ma

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