Stm32h725ae PDF

STM32H725xE/G
Arm® Cortex®-M7 32-bit 550 MHz MCU, up to 1 MB Flash, 564 KB

RAM, Ethernet, USB, 3x FD-CAN, Graphics, 2x 16-bit ADCs
Datasheet - production data
Features
Includes ST state-of-the-art patented
technology
LQFP100 (14 x 14 mm)
VFQFPN 68
LQFP144 (20 x 20 mm)
Core LQFP176 (24 x 24 mm)
(8x8 mm)
• 32-bit Arm® Cortex®-M7 CPU with DP-FPU, L1

cache: 32-Kbyte data cache and 32-Kbyte FBGA FBGA
instruction cache allowing 0-wait state

execution from embedded Flash memory and
external memories, frequency up to 550 MHz, TFBGA100 UFBGA 169 (7 x 7 mm)
MPU, 1177 DMIPS/2.14 DMIPS/MHz (8x8 mm) UFBGA 176+25 (10 x 10 mm)
(Dhrystone 2.1), and DSP instructions
Memories
• Up to 1 Mbyte of embedded Flash memory with
WLCSP 115
ECC 0.35 mm pitch
• SRAM: total 564 Kbytes all with ECC, including
128 Kbytes of data TCM RAM for critical real-
time data + 432 Kbytes of system RAM (up to Clock, reset and supply management
256 Kbytes can remap on instruction TCM • 1.62 V to 3.6 V application supply and I/O
RAM for critical real time instructions) +
4 Kbytes of backup SRAM (available in the • POR, PDR, PVD and BOR
lowest-power modes) • Dedicated USB power
• Flexible external memory controller with up to • Embedded DCDC and LDO regulator
24-bit data bus: SRAM, PSRAM, (*)VFQFPN68 variant is DCDC only
SDRAM/LPSDR SDRAM, NOR/NAND • Internal oscillators: 64 MHz HSI, 48 MHz
memories HSI48, 4 MHz CSI, 32 kHz LSI
• 2 x Octo-SPI interface with XiP • External oscillators: 4-50 MHz HSE,
• 2 x SD/SDIO/MMC interface 32.768 kHz LSE
• Bootloader
Low power
Graphics • Sleep, Stop and Standby modes
• Chrom-ART Accelerator graphical hardware • VBAT supply for RTC, 32×32-bit backup
accelerator enabling enhanced graphical user registers
interface to reduce CPU load
• LCD-TFT controller supporting up to XGA Analog
resolution • 2×16-bit ADC, up to 3.6 MSPS in 16-bit: up to
22 channels and 7.2 MSPS in double-
interleaved mode
December 2021 DS13311 Rev 3 1/282

www.st.com
STM32H725xE/G
• 1 x 12-bit ADC, up to 5 MSPS in 12-bit, up to 12 external clock and up to 5 x SPI (from 5 x

channels USART when configured in synchronous
• 2 x comparators mode)
• 2 x operational amplifier GBW = 8 MHz • 2x SAI (serial audio interface)
• 2× 12-bit D/A converters • 1× FD/TT-CAN and 2x FD-CAN

• 8- to 14-bit camera interface
Digital filters for sigma delta modulator • 16-bit parallel slave synchronous interface
(DFSDM)
• SPDIF-IN interface
• 8 channels/4 filters
• HDMI-CEC
4 DMA controllers to offload the CPU • Ethernet MAC interface with DMA controller
• 1 × MDMA with linked list support • USB 2.0 high-speed/full-speed
device/host/OTG controller with dedicated
• 2 × dual-port DMAs with FIFO DMA, on-chip FS PHY and ULPI for external
• 1 × basic DMA with request router capabilities HS PHY
• SWPMI single-wire protocol master I/F
24 timers
• MDIO slave interface
• Seventeen 16-bit (including 5 x low power
16-bit timer available in stop mode) and four Mathematical acceleration
32-bit timers, each with up to 4 IC/OC/PWM or
pulse counter and quadrature (incremental) • CORDIC for trigonometric functions
encoder input acceleration
• 2x watchdogs, 1x SysTick timer • FMAC: Filter mathematical accelerator
Debug mode Digital temperature sensor

• SWD and JTAG interfaces True random number generator
• 2-Kbyte embedded trace buffer
CRC calculation unit
Up to 128 I/O ports with interrupt
capability RTC with sub-second accuracy and
hardware calendar
Up to 35 communication interfaces
• Up to 5 × I2C FM+ interfaces
ROP, PC-ROP, tamper detection
(SMBus/PMBus™)
96-bit unique ID
• Up to 5 USARTs/5 UARTs (ISO7816 interface,
LIN, IrDA, modem control) and 1 x LPUART All packages are ECOPACK2 compliant
• Up to 6 SPIs with 4 with muxed duplex I2S for
audio class accuracy via internal audio PLL or
Table 1. Device summary
Reference Part number
STM32H725ZE, STM32H725VE, STM32H725RE, STM32H725IE,

STM32H725xE
STM32H725AE
STM32H725ZG, STM32H725VG, STM32H725RG, STM32H725IG,
STM32H725xG
STM32H725AG
2/282 DS13311 Rev 3

STM32H725xE/G Contents
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.1 Arm® Cortex®-M7 with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.2 Memory protection unit (MPU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.3 Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.1 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.2 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Error code correction (ECC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
3.4 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

3.5 CORDIC co-processor (CORDIC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
CORDIC features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
3.6 Filter mathematical accelerator (FMAC) . . . . . . . . . . . . . . . . . . . . . . . . . . 26

FMAC features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
3.7 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

3.7.1 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.7.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.7.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.8 Low-power strategy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.9 Reset and clock controller (RCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.9.1 Clock management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.9.2 System reset sources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.10 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.11 Bus-interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.12 DMA controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.13 Chrom-ART Accelerator (DMA2D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.14 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 34
3.15 Extended interrupt and event controller (EXTI) . . . . . . . . . . . . . . . . . . . . 34
3.16 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 34
3.17 Flexible memory controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.18 Octo-SPI memory interface (OCTOSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 35
DS13311 Rev 3 3/282

8
Contents STM32H725xE/G
3.19 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

3.20 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.21 Digital temperature sensor (DTS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.22 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.23 Digital-to-analog converters (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.24 Ultra-low-power comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.25 Operational amplifiers (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.26 Digital filter for sigma-delta modulators (DFSDM) . . . . . . . . . . . . . . . . . . 39
3.27 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.28 PSSI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.29 LCD-TFT controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.30 True random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.31 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.31.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.31.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.31.3 Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.31.4 Low-power timers (LPTIM1, LPTIM2, LPTIM3, LPTIM4, LPTIM5) . . . . 46
3.31.5 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.31.6 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.31.7 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.32 Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . . . 47
3.33 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.34 Universal synchronous/asynchronous receiver transmitter (USART) . . . 48
3.35 Low-power universal asynchronous receiver transmitter (LPUART) . . . . 49
3.36 Serial peripheral interface (SPI)/inter- integrated sound interfaces (I2S) . 50
3.37 Serial audio interfaces (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
3.38 SPDIFRX Receiver Interface (SPDIFRX) . . . . . . . . . . . . . . . . . . . . . . . . . 51
3.39 Single wire protocol master interface (SWPMI) . . . . . . . . . . . . . . . . . . . . 51
3.40 Management data input/output (MDIO) slaves . . . . . . . . . . . . . . . . . . . . . 52
3.41 SD/SDIO/MMC card host interfaces (SDMMC) . . . . . . . . . . . . . . . . . . . . 52
3.42 Controller area network (FDCAN1, FDCAN2, FDCAN3) . . . . . . . . . . . . . 52
3.43 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 53
3.44 Ethernet MAC interface with dedicated DMA controller (ETH) . . . . . . . . . 53
4/282 DS13311 Rev 3

3.45 High-definition multimedia interface (HDMI)

- consumer electronics control (CEC) . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
3.46 Debug infrastructure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
4 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
5 Pinouts, pin descriptions and alternate functions . . . . . . . . . . . . . . . . 56
6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . 115
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .115
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .117
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
6.3.2 VCAP external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
6.3.3 SMPS step-down converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
6.3.4 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . 124
6.3.5 Embedded reset and power control block characteristics . . . . . . . . . . 125
6.3.6 Embedded reference voltage characteristics . . . . . . . . . . . . . . . . . . . . 126
6.3.7 Embedded USB regulator characteristics . . . . . . . . . . . . . . . . . . . . . . 127
6.3.8 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Typical and maximum current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . .128
Typical SMPS efficiency versus load current and temperature . . . . . . . . . . . . .135
I/O system current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .137
On-chip peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .138
6.3.9 Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . 144
6.3.10 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 145
High-speed external user clock generated from an external source . . . . . . . . .145
Low-speed external user clock generated from an external source . . . . . . . . . .146
High-speed external clock generated from a crystal/ceramic resonator. . . . . . .147
Low-speed external clock generated from a crystal/ceramic resonator . . . . . . .148
6.3.11 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 149
DS13311 Rev 3 5/282

8
48 MHz high-speed internal RC oscillator (HSI48) . . . . . . . . . . . . . . . . . . . . . . .149

64 MHz high-speed internal RC oscillator (HSI) . . . . . . . . . . . . . . . . . . . . . . . . .150
4 MHz low-power internal RC oscillator (CSI) . . . . . . . . . . . . . . . . . . . . . . . . . .151
Low-speed internal (LSI) RC oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .151
6.3.12 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
6.3.13 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .156
6.3.14 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Functional EMS (electromagnetic susceptibility) . . . . . . . . . . . . . . . . . . . . . . . .157
Designing hardened software to avoid noise problems . . . . . . . . . . . . . . . . . . .157
Electromagnetic Interference (EMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .158
6.3.15 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 158
Electrostatic discharge (ESD). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .158
Static latchup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .159
6.3.16 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Functional susceptibility to I/O current injection . . . . . . . . . . . . . . . . . . . . . . . . .159
6.3.17 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
General input/output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .160
Output driving current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .162
Output voltage levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .163
Output buffer timing characteristics (HSLV option disabled) . . . . . . . . . . . . . . .165
Output buffer timing characteristics (HSLV option enabled). . . . . . . . . . . . . . . .167
Analog switch between ports Pxy_C and Pxy . . . . . . . . . . . . . . . . . . . . . . . . . .168
6.3.18 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
6.3.19 FMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Asynchronous waveforms and timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .169
Synchronous waveforms and timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .177
NAND controller waveforms and timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .185
SDRAM waveforms and timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .188
6.3.20 Octo-SPI interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
6.3.21 Delay block (DLYB) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
6.3.22 16-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
General PCB design guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .204
6.3.23 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
6.3.24 DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
6.3.25 Voltage reference buffer characteristics . . . . . . . . . . . . . . . . . . . . . . . 216
6.3.26 Analog temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . 217
6.3.27 Digital temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . 218
6.3.28 Temperature and VBAT monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218
6.3.29 Voltage booster for analog switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
6/282 DS13311 Rev 3

6.3.30 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219

6.3.31 Operational amplifier characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 220
6.3.32 Digital filter for Sigma-Delta Modulators (DFSDM) characteristics . . . 223
6.3.33 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 225
6.3.34 Parallel synchronous slave interface (PSSI) characteristics . . . . . . . . 226
6.3.35 LCD-TFT controller (LTDC) characteristics . . . . . . . . . . . . . . . . . . . . . 227
6.3.36 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229
6.3.37 Low-power timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229
6.3.38 Communication interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
I2C interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .230
USART interface characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .231
SPI interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .233
I2S Interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .236
SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .238
MDIO characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .240
SD/SDIO MMC card host interface (SDMMC) characteristics . . . . . . . . . . . . . .241
USB OTG_FS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .243
USB OTG_HS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .244
Ethernet interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .245
JTAG/SWD interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .247
7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250

7.1 VFQFPN68 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250
Device marking for VFQFPN68 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .252
7.2 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253

Device marking for LQFP100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .256
7.3 TFBGA100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257

Device marking for TFBGA100. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .259
7.4 WLCSP115 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260

Device marking for WLSCP115 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .262

7.6 UFBGA169 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267

Device marking for UFBGA169 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .269

7.8 UFBGA176+25 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 274

Device marking for UFBGA176+25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .276
DS13311 Rev 3 7/282

8
7.9 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277

7.9.1 Reference documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278
8 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 279
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280
8/282 DS13311 Rev 3

STM32H725xE/G List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table 2. STM32H725xE/G features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 3. System versus domain low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 4. DFSDM implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 5. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 6. USART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 7. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 8. STM32H725 pin and ball descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 9. STM32H725 pin alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 10. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 11. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 12. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 13. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 14. Supply voltage and maximum temperature configuration. . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 15. VCAP operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 16. Characteristics of SMPS step-down converter external components . . . . . . . . . . . . . . . . 121
Table 17. SMPS step-down converter characteristics for external usage . . . . . . . . . . . . . . . . . . . . 121
Table 18. Inrush current and inrush electric charge characteristics for LDO and SMPS . . . . . . . . . 122
Table 19. Operating conditions at power-up/power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 20. Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 21. Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 22. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 23. USB regulator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 24. Typical and maximum current consumption in Run mode,
code with data processing running from ITCM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 25. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory, cache ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
code with data processing running from Flash memory, cache OFF. . . . . . . . . . . . . . . . 131
Table 27. Typical consumption in Run mode and corresponding performance
versus code position . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 28. Typical current consumption in Autonomous mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 29. Typical and maximum current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . 132
Table 30. Typical and maximum current consumption in System Stop mode . . . . . . . . . . . . . . . . . 133
Table 31. Typical and maximum current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . 134
Table 32. Typical and maximum current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . 134
Table 33. Peripheral current consumption in Run mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 34. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Table 35. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 36. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Table 37. 4-50 MHz HSE oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 38. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 39. HSI48 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Table 40. HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Table 41. CSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 42. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 43. PLL1 characteristics (wide VCO frequency range) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 44. PLL1 characteristics (medium VCO frequency range) . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
DS13311 Rev 3 9/282

11
List of tables STM32H725xE/G
Table 45. PLL2 and PLL3 characteristics (wide VCO frequency range) . . . . . . . . . . . . . . . . . . . . . 154
Table 46. PLL2 and PLL3 characteristics (medium VCO frequency range) . . . . . . . . . . . . . . . . . . . 155
Table 47. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 48. Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 49. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 50. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Table 51. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Table 52. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Table 53. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 54. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 55. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Table 56. Output voltage characteristics for all I/Os except PC13, PC14 and PC15 . . . . . . . . . . . . 163
Table 57. Output voltage characteristics for PC13, PC14 and PC15 . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 58. Output timing characteristics (HSLV OFF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 59. Output timing characteristics (HSLV ON) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Table 60. Pxy_C and Pxy analog switch characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 61. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 62. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . 171
Table 63. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings . . . . . . . . . . . 171
Table 64. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 173
Table 65. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings. . . . . . . . . . . 173
Table 66. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Table 67. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 175
Table 68. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 176
Table 69. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 176
Table 70. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Table 71. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Table 72. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 182
Table 73. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Table 74. Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Table 75. Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Table 76. SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Table 77. LPSDR SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Table 78. SDRAM Write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Table 79. LPSDR SDRAM Write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 80. OCTOSPI characteristics in SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 81. OCTOSPI characteristics in DTR mode (no DQS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Table 82. OCTOSPI characteristics in DTR mode (with DQS)/Octal and Hyperbus . . . . . . . . . . . . 194
Table 83. Delay Block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Table 84. 16-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Table 85. Minimum sampling time vs RAIN (16-bit ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
Table 86. 16-bit ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Table 87. 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Table 88. Minimum sampling time vs RAIN (12-bit ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208
Table 89. 12-bit ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
Table 90. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
Table 91. DAC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Table 92. VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216
Table 93. Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Table 94. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Table 95. Digital temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218
Table 96. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218
10/282 DS13311 Rev 3

STM32H725xE/G List of tables
Table 97. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218

Table 98. Temperature monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
Table 99. Voltage booster for analog switch characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
Table 100. COMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219
Table 101. Operational amplifier characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
Table 102. DFSDM measured timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
Table 103. DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225
Table 104. PSSI transmit characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
Table 105. PSSI receive characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
Table 106. LTDC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227
Table 107. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229
Table 108. LPTIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 229
Table 109. Minimum i2c_ker_ck frequency in all I2C modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
Table 110. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
Table 111. USART characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231
Table 112. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233
Table 113. I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 236
Table 114. SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 238
Table 115. MDIO Slave timing parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
Table 116. Dynamics characteristics: SD / MMC characteristics, VDD = 2.7 to 3.6 V . . . . . . . . . . . . 241
Table 117. Dynamics characteristics: eMMC characteristics VDD = 1.71V to 1.9V . . . . . . . . . . . . . . 242
Table 118. USB OTG_FS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244
Table 119. Dynamics characteristics: USB ULPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244
Table 120. Dynamics characteristics: Ethernet MAC signals for SMI . . . . . . . . . . . . . . . . . . . . . . . . 245
Table 121. Dynamics characteristics: Ethernet MAC signals for RMII . . . . . . . . . . . . . . . . . . . . . . . . 246
Table 122. Dynamics characteristics: Ethernet MAC signals for MII . . . . . . . . . . . . . . . . . . . . . . . . . 247
Table 123. Dynamics JTAG characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Table 124. Dynamics SWD characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Table 125. VFQFPN68 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 251
Table 126. LQFP100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254
Table 127. TFBGA100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
Table 128. TFBGA100 - Recommended PCB design rules (0.8 mm pitch BGA) . . . . . . . . . . . . . . . . 259
Table 129. WLCSP115 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261
Table 130. WLCSP115 - Recommended PCB design rules. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 262
Table 132. UFBGA169 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267
Table 133. UFBGA169 - Recommended PCB design rules (0.5 mm pitch BGA). . . . . . . . . . . . . . . . 268
Table 135. UFBGA176+25 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 274
Table 136. UFBGA176+25 - Recommended PCB design rules (0.65 mm pitch BGA) . . . . . . . . . . . 275
Table 137. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277
Table 138. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280
DS13311 Rev 3 11/282

11
List of figures STM32H725xE/G
List of figures
Figure 1. STM32H725xE/G block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Figure 2. Power-up/power-down sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 3. STM32H725xE/G bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 4. VFQFPN68 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 5. TFBGA100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 6. LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 7. WLCSP115 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 10. UFBGA169 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 11. UFBGA176+25 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 12. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 13. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 14. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Figure 15. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Figure 16. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 17. External components for SMPS step-down converter . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 18. Typical SMPS efficiency (%) vs load current (A) in Run mode at TJ = 30 °C. . . . . . . . . . 135
Figure 19. Typical SMPS efficiency (%) vs load current (A) in Run mode at TJ = TJmax . . . . . . . . . 135
Figure 20. Typical SMPS efficiency (%) vs load current (A) in Stop and
DStop modes at TJ = 30 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Figure 21. Typical SMPS efficiency (%) vs load current (A) in low-power mode at TJ = TJmax . . . 136
Figure 22. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Figure 23. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 24. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Figure 25. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Figure 26. VIL/VIH for all I/Os except BOOT0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 27. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Figure 28. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 170
Figure 29. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 172
Figure 30. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 31. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Figure 32. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Figure 33. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 181
Figure 34. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
Figure 35. NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Figure 36. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Figure 37. NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 186
Figure 38. NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 187
Figure 39. SDRAM read access waveforms (CL = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 40. SDRAM write access waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Figure 41. OCTOSPI SDR read/write timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Figure 42. OCTOSPI DTR mode timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Figure 43. OCTOSPI Hyperbus clock timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
Figure 44. OCTOSPI Hyperbus read timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
Figure 45. OCTOSPI Hyperbus write timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Figure 46. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
Figure 47. Typical connection diagram when using the ADC with FT/TT pins
12/282 DS13311 Rev 3

STM32H725xE/G List of figures
featuring analog switch function203

Figure 48. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 204
Figure 49. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 204
Figure 50. 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Figure 51. Channel transceiver timing diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
Figure 52. DCMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225
Figure 53. LCD-TFT horizontal timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
Figure 54. LCD-TFT vertical timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
Figure 55. USART timing diagram in Master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232
Figure 56. USART timing diagram in Slave mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232
Figure 57. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 234
Figure 58. SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235
Figure 59. SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235
Figure 60. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 237
Figure 61. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 237
Figure 62. SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 239
Figure 63. SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
Figure 64. MDIO Slave timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 241
Figure 65. SD high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
Figure 66. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
Figure 67. SDMMC DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
Figure 68. ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 245
Figure 69. Ethernet SMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246
Figure 70. Ethernet RMII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246
Figure 71. Ethernet MII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247
Figure 72. JTAG timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
Figure 73. SWD timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
Figure 74. VFQFPN68 - Outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250
Figure 75. VFQFPN68 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 251
Figure 76. VFQFPN68 marking example (package top view . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252
Figure 77. LQFP100- Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253
LQFP100 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255
Figure 78. LQFP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 256
Figure 79. TFBGA100 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257
Figure 80. TFBGA100 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
Figure 81. TFBGA100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259
Figure 82. WLCSP115 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
Figure 83. WLCSP115 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261
Figure 84. WLCSP115 marking example (package top view. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 262
Figure 85. LQFP144 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 263
Figure 86. LQFP144 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265
Figure 87. LQFP144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 266
Figure 88. UFBGA169 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267
Figure 89. UFBGA169 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 268
Figure 90. UFBGA169 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269
Figure 91. LQFP176 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270
Figure 92. LQFP176 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272
Figure 93. LQFP176 marking example (package top view . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 273
Figure 94. UFBGA176+25 - Outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 274
Figure 95. UFBGA176+25 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275
Figure 96. UFBGA176+25 marking example (package top view . . . . . . . . . . . . . . . . . . . . . . . . . . . 276
DS13311 Rev 3 13/282

13
Introduction STM32H725xE/G
1 Introduction
This document provides information on STM32H725xE/G microcontrollers, such as

description, functional overview, pin assignment and definition, packaging, and ordering
information.
This document should be read in conjunction with the STM32H725xE/G reference manual
(RM0468), available from the STMicroelectronics website www.st.com.
For information on the device errata with respect to the datasheet and reference manual,
refer to the STM32H725 errata sheet (ES0491) available on the STMicroelectronics website
www.st.com.
For information on the Arm®(a) Cortex®-M7 core, refer to the Cortex®-M7 Technical
Reference Manual, available from the http://www.arm.com website.
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
14/282 DS13311 Rev 3

STM32H725xE/G Description
2 Description
STM32H725xE/G devices are based on the high-performance Arm® Cortex®-M7 32-bit

RISC core operating at up to 550 MHz. The Cortex® -M7 core features a floating point unit
(FPU) which supports Arm® double-precision (IEEE 754 compliant) and single-precision
data-processing instructions and data types. The Cortex -M7 core includes 32 Kbytes of
instruction cache and 32 Kbytes of data cache. STM32H725xE/G devices support a full set
of DSP instructions and a memory protection unit (MPU) to enhance application security.
STM32H725xE/G devices incorporate high-speed embedded memories with up to 1 Mbyte
of Flash memory, up to 564 Kbytes of RAM (including 192 Kbytes that can be shared
between ITCM and AXI, plus 64 Kbytes exclusively ITCM, plus 128 Kbytes exclusively AXI,
128 Kbyte DTCM, 48 Kbytes AHB and 4 Kbytes of backup RAM), as well as an extensive
range of enhanced I/Os and peripherals connected to APB buses, AHB buses, 2x32-bit
multi-AHB bus matrix and a multi layer AXI interconnect supporting internal and external
memory access. To improve application robustness, all memories feature error code
correction (one error correction, two error detections).
The devices embed peripherals allowing mathematical/arithmetic function acceleration
(CORDIC coprocessor for trigonometric functions and FMAC unit for filter functions). All the
devices offer three ADCs, two DACs, two operational amplifiers, two ultra-low power
comparators, a low-power RTC, 4 general-purpose 32-bit timers, 12 general-purpose 16-bit
timers including two PWM timers for motor control, five low-power timers, a true random
number generator (RNG). The devices support four digital filters for external sigma-delta
modulators (DFSDM). They also feature standard and advanced communication interfaces.
• Standard peripherals
– Five I2Cs
– Five USARTs, five UARTs and one LPUART
– Six SPIs, four I2Ss in Half-duplex mode. To achieve audio class accuracy, the I2S
peripherals can be clocked by a dedicated internal audio PLL or by an external
clock to allow synchronization (note that the five USARTs also provide SPI slave
capability).
– Two SAI serial audio interfaces
– One SPDIFRX interface with four inputs
– One SWPMI (Single Wire Protocol Master Interface)
– Management Data Input/Output (MDIO) slaves
– Two SDMMC interfaces
– A USB OTG high-speed interface with full-speed capability (with the ULPI)
– Two FDCANs plus one TT-FDCAN interface
– An Ethernet interface
– Chrom-ART Accelerator
– HDMI-CEC
DS13311 Rev 3 15/282

55
Description STM32H725xE/G
• Advanced peripherals including

– A flexible memory control (FMC) interface
– Two Octo-SPI memory interfaces
– A camera interface for CMOS sensors
– An LCD-TFT display controller
Refer to Table 2: STM32H725xE/G features and peripheral counts for the list of peripherals
available on each part number.
To reduce the power consumption the STM32H725xE/G include an optional step-down
converter that can be used either for internal or external supply, or both.
STM32H725xE/G devices operate in the –40 to +125 °C ambient temperature range from a
1.62 to 3.6 V power supply. The supply voltage can drop down to 1.62 V by using an
external power supervisor (see Section 3.7.2: Power supply supervisor) and connecting the
PDR_ON pin to VSS. Otherwise the supply voltage must stay above 1.71 V with the
embedded power voltage detector enabled.
Dedicated supply inputs for USB are available to allow a greater power supply choice.
A comprehensive set of power-saving modes allows the design of low-power applications.
STM32H725xE/G devices are offered in several packages ranging from 68 to 176
pins/balls. The set of included peripherals changes with the device chosen.
These features make STM32H725xE/G microcontrollers suitable for a wide range of
applications:
• Motor drive and application control
• Medical equipment
• Industrial applications: PLC, inverters, circuit breakers
• Printers, and scanners
• Alarm systems, video intercom, and HVAC
• Home audio appliances
• Mobile applications, Internet of Things
• Wearable devices: smart watches.
Figure 1 shows the device block diagram.
16/282 DS13311 Rev 3

Figure 1. STM32H725xE/G block diagram

D[7:0],DP, DM, STP,
MII / RMII D123DIR, NXT,ULPI:CK
To APB1-2 MDIO
peripherals D0DIR, , D[7:0], DIR,
as AF
CMD, CKas AF ID, VBUS
AHB1 (275MHz)
D-TCM D-TCM
64KB 64KB PHY
I-TCM 64KB
ETHER
Shared AXI
DMA1 DMA2 SDMMC2 OTG_HS
MAC
I-TCM 192KB
AHBP
128 KB AXI
8 Stream 8 Stream DMA/ DMA/
NJTRST, JTDI, SRAM FIFO
Arm CPU FIFOs FIFOs FIFO FIFO
JTCK/SWCLK JTAG/SW AXI/AHB12 (275MHz)
Cortex-M7
JTDO/SWDIO, JTDO AXIM
550 MHz Up to 1 MB
TRACECLK ETM FLASH 32-bit AHB BUS-MATRIX
TRACED[3:0] I-Cache D-Cache FMC
AHB1 (275MHz)
32KB 32KB DMA
FMC_signals
AHBS
OCTOSPI1
Mux1 SRAM1 SRAM2
OCTOSPI1
16 KB 16 KB
AHB2 (275MHz)
16 Streams signals
MDMA
64-bit AXI BUS-MATRIX

FIFO RNG ADC1
OCTOSPIM
CORDIC Up to 20 analog inputs Most
CHROM-ART ADC2 are common to ADC1 & 2
FIFO
(DMA2D) FMAC AHB/APB
OCTOSPI2
LCD_R[7:0], LCD_G[7:0], LCD-TFT FIFO 32b TIM2 CH[4;1], ETR as AF
APB3 (138MHz)
OCTOSPI2
LCD_B[7:0], LCD_HSYNC,
signals 16b TIM3 CH[4;1], ETR as AF
LCD_VSYNC, LCD_DE, LCD_CLK
WWDG 16b TIM4 CH[4;1], ETR as AF

DLYBOS1-2
AHB/APB 32b TIM5 CH[4;1], ETR as AF
DLYBSD1
AHB3
TIM6 32b TIM23 CH[4;1], ETR as AF
16b
D[7:0], D123DIR, D0DIR, 32b TIM24 CH[4;1], ETR as AF
CMD, CKas AF SDMMC1 FIFO AXI/AHB34 (275MHz) TIM7 16b
16b TIM12 CH[2;1] as AF
DLYBSD2 AHB2 (275MHz) SWPMI 16b TIM13 CH1 as AF
AHB4
DCMI 16b TIM14 CH1 as AF

HSYNC, VSYNC, PIXCLK, D[13:0]
PDCK, DE, RDY, D[15:0] PSSI AHB/APB USART2 RX, TX, CK, CTS, RTS, DE as AF
USART3 RX, TX, CK, CTS, RTS, DE as AF
UART4 RX, TX, CTS, RTS, DE as AF

CKOUT, DATIN[7:0], CKIN[7:0] DFSDM
FIFO
SD_[A;B], SCK_[A;B], FS_[A;B], SAI1 UART7 RX, TX, CTS, RTS, DE as AF

MCLK_[A;B], D[3:1], CK[2:1] as AF
MOSI, MISO, SCK, NSS as AF SPI5
SPI2/I2S2 MOSI, MISO, SCK, NSS /
1 compl. chan.(TIM17_CH1N), SDO, SDI, CK, WS, MCK, as AF
1 chan. (TIM17_CH1, BKIN as AF
TIM17 A P B 10 MHz
3
SPI3/I2S3 MOSI, MISO, SCK, NSS /
1 compl. chan.(TIM16_CH1N), SDO, SDI, CK, WS, MCK, as AF
1 chan. (TIM16_CH1, BKIN as AF TIM16
I2C1/SMBUS SCL, SDA, SMBA as AF
AHB4_MEMD3 (275MHz)
APB2 138 MHz (max)
2 compl. chan.(TIM15_CH1[1:2]N), TIM15
Digital filter
2 chan. (TIM_CH15[1:2], BKIN as AF
I2C2/SMBUS SCL, SDA, SMBA as AF
APB1 138 MHz (max)
MOSI, MISO, SCK, NSS as AF SPI4

MOSI, MISO, SCK, NSS / I2C3/SMBUS SCL, SDA, SMBA as AF
SPI1/I2S1
10 KB SRAM
SDO, SDI, CK, WS, MCK, as AF DMA

AHB4
Mux2 I2C5/SMBUS SCL, SDA, SMBA as AF

AHB4
RX, TX, CTS, RTS, DE as AF UART9

AHB4 DAP USBCR
BDMA
RX, TX, CK, CTS, RTS, DE as AF USART10
MDIOS MDC, MDIO as AF
AHB4
RX, TX, CK, CTS, RTS, DE as AF USART6

32-bit AHB BUS-MATRIX RAM TT-FDCAN1 TX, RX, RXFD_MODE,
RX, TX, CK, CTS, RTS, DE as AF USART1 I/F TXFD_MODE as AF
FIFO
FDCAN2 TX, RX, RXFD_MODE,

TXFD_MODE as AF
AHB4 (275MHz)
CH[1:4]N, CH[1:4], ETR, BKIN, BKIN2 TIM1/PWM

as AF 16b FDCAN3 TX, RX, RXFD_MODE,
HSEM TXFD_MODE as AF
CH[1:4]N, CH[1:4], ETR, BKIN, BKIN2
TIM8/PWM 16 KB SRAM 4 KB BKP SPDIFRX1 IN[1:4] as AF
as AF 16b CRC RAM
Up to 17 analog inputs HDMI-CEC CEC as AF
Some common to ADC1 and 2 ADC3
DAC OUT1, OUT2 as AF
AHB4
PA..H[15:0] GPIO PORTA.. H

LPTIM1 IN1, IN2, ETR, OUT as AF
16b
PJ,PK[11:0] GPIO PORTJ,K RCC OPAMP1 VINM, VINP, VOUT as AF
Reset &
AHB4 (275MHz)
OPAMP2 VINM, VINP, VOUT as AF

control
@VDD
SD_[A;B], SCK_[A;B], FS_[A;B],
MCLK_[A;B], D[3:1], CK[2:1] as AF
SAI4 VCORE BBgen + POWER MNGT
VDD
PWRCTRL
COMPx_INP, COMPx_INM, COMP1&2 Voltage VSS

COMPx_OUT as AF regulator VCAP, VDDLDO
VDDSMPS, VSSSMPS,
OUT as AF LPTIM5 16b
3.3 to 1.2V VLXSMPS, VFBSMPS
VREF AHB/APB
OUT as AF LPTIM4 VBAT
16b @VSW
SYSCFG
APB4 138 MHz (max)
LPTIM3 XTAL 32 kHz OSC32_IN

OUT as AF 16b OSC32_OUT
EXTI WKUP
LS
SCL, SDA, SMBA as AF I2C4 RTC

(max)
IWDG @VDD
MHz (max)
MOSI, MISO, SCK, NSS / Backup registers TS, TAMP1, TAMP3,

SPI6/I2S6 AWU OUT, REFIN
138138MHz
SDO, SDI, CK, WS, MCK, as AF HSI RC

LS
HSI
Temperature
RX, TX, CK, CTS, RTS as AF LPUART1 sensor HSI48 HSI48 RC
APB4
LPTIM2 CSI CSI RC

IN1, IN2, ETR, OUT as AF 16b
APB4
@VDD
LSI LSI RC
XTAL OSC OSC_IN
PLL1+PLL2+PLL3 4- 48 MHz OSC_OUT
@VDD
SUPPLY SUPERVISION
POR VDDA, VSSA
reset POR/PDR/BOR NRESET
Int PVD WKUP[1;2;4;6]
MSv52562V4
DS13311 Rev 3 17/282

55
Table 2. STM32H725xE/G features and peripheral counts

STM32H STM32H STM32H STM32H STM32 STM32H STM32H STM32H
Peripherals 725REV/ 725VET/ 725VEH/ 725ZET/ H725V 725AEI/ 725IEK/ 725IET/
RGV VGT VGH ZGT GY AGI IGK IGT
512/ 512/ 512/ 512/ 512/ 512/ 512/

Flash memory (Kbytes) 1024
1024 1024 1024 1024 1024 1024 1024
SRAM
mapped onto 128
AXI bus
SRAM1
SRAM 16
(D2 domain)
(Kbytes)
SRAM2
16
(D2 domain)
SRAM4
16
(D3 domain)
RAM shared between ITCM
192
and AXI (Kbytes)
ITCM RAM
64
TCM RAM in (instruction)
Kbytes DTCM RAM
128
(data)
Backup SRAM (Kbytes) 4
Interface 1
NOR Flash
memory/
- - - - - yes yes yes
RAM
controller
Multiplexed
I/O
- yes yes yes - yes yes yes
FMC NOR Flash
memory
16-bit NAND
- yes yes yes yes yes yes yes
Flash memory
16-bit SDRAM
- - - - - yes yes yes
controller
24-bit SDRAM
- - - - - - yes -
controller(1)
GPIO 46 67 74 97 67 121 128 119
1 Quad- 1 Quad- 2 Quad-
Octo-SPI interface 1 1 2 2 2
SPI SPI SPI
OTFDEC no
Cordic yes
FMAC yes
18/282 DS13311 Rev 3

Table 2. STM32H725xE/G features and peripheral counts (continued)

General
purpose 32 4 4 4 4 4 4 4 4
bits
General
purpose 16 10 10 10 10 10 10 10 10
bits
Advanced
control 2(2) 2 2(2) 2 2 2 2 2
Timers (PWM)
Basic 2 2 2 2 2 2 2 2
Low-power 5 5 5 5 5 5 5 5
RTC 1 1 1 1 1 1 1 1
Window
watchdog /
2 2 2 2 2 2 2 2
independent
watchdog
Wakeup pins 3 4 4 4 4 4 4 4
Tamper pins 1 2 2 2 2 2 2 2
Random number generator yes
Cryptographic accelerator no
(2)
SPI / I2S 4/4 5/4 5/4 6/4 4/4 6/4 6/4 6/4
I2C 4 5 5 5 5 5 5 5
USART/
UART/ 3/4/1 4/4/1 4/6/1 5/5/1 4/4/1 5/5/1 5/5/1 5/5/1
LPUART
SAI/PDM 1/0(2) 2/1(2) 2/1(2) 2/1 1/1(2) 2/1 2/1 2/1
SPDIFRX 1
HDMI-CEC 1
Commu- SWPMI 1
nication
interfaces MDIO 1
SDMMC 2
FDCAN/
1/1 2/1 2/1 2/1 2/1 2/1 2/1 2/1
TT-FDCAN
USB
[OTG_HS
1 [0/1] 1 [1/1] 1 [1/1] 1 [1/1] 1 [0/1] 1 [1/1] 1 [1/1] 1 [1/1]
(ULPI)/FS(PH
Y)]
Ethernet
- 1 [1/1] 1 [1/1] 1 [1/1] 1 [0/1] 1 [1/1] 1 [1/1] 1 [1/1]
[MII/RMII]
DS13311 Rev 3 19/282

55

Camera interface/PSSI yes

(2) (2) (2)
LCD-TFT yes yes yes yes yes yes yes yes
Chrom-ART Accelerator
yes
(DMA2D)
Number of
2
ADCs
Number of
Direct
0 0 2/2 0 2/2 2/2 2/2 0
channels
ADC1/ADC2
16-bit ADCs
Number of
Fast channels 3/2 3/2 3/2 4/2 3/2 6/5 6/5 4/3
ADC1/ADC2
Number of
Slow channels 11/10 11/10 9/8 11/11 9/8 12/11 12/11 12/11
ADC1/ADC2
Number of
1
ADCs
Number of
Direct 0 2 2 2 2 2 2 2
12-bit ADCs channels
Number of
0 2 6 4 6 6 6 6
Fast channels
Number of
2 0 9 3 9 9 9 4
Slow channels
Present in IC yes
12-bit DAC Number of
2
channels
Comparators 2
Operational amplifiers 2
DFSDM Present in IC yes
Maximum CPU frequency 550 MHz
USB separate supply pad - yes yes yes yes yes yes yes
USB internal regulator - - - yes yes yes yes yes
LDO - yes yes yes
SMPS step-down converter yes
20/282 DS13311 Rev 3


1.62 to 3.6 V
Operating voltage 1.71 to 3.6 V
1.62 to 3.6 V
Ambient
-40°C to +85°C
Operating temperature
temperatures Junction
-40°C to +125°C
temperature
Extended Ambient
-40°C to +125°C
operating temperature
temperatures Junction
(3) -40°C to +140°C
temperature
VFQFPN LQFP TFBGA LQFP WLCSP UFBGA UFBGA LQFP17
Package
68 100 100 144 115 169 176+25 6
1. The 24-bit SDRAM controller is a 32-bit controller with only a 24-bit data bus and without NBL2-3. It can be used for graphical
purposes to access aligned 32-bit words ignoring upper 8 bits.
2. For limitations on peripheral features depending on packages, check the available pins/balls in Table 8: STM32H725 pin and
ball descriptions.
3. The extended temperature range is not available on WLCSP115 package.
DS13311 Rev 3 21/282

55
Functional overview STM32H725xE/G
3 Functional overview
3.1 Arm® Cortex®-M7 with FPU

The Arm® Cortex®-M7 with double-precision FPU processor is the latest generation of Arm
processors for embedded systems. It was developed to provide a low-cost platform that
meets the needs of MCU implementation, with a reduced pin count and optimized power
consumption, while delivering outstanding computational performance and low interrupt
latency.
The Cortex®-M7 processor is a highly efficient high-performance featuring:
• Six-stage dual-issue pipeline
• Dynamic branch prediction
• Harvard architecture with L1 caches (32 Kbytes of I-cache and 32 Kbytes of D-cache)
• 64-bit AXI interface
• 64-bit ITCM interface
• 2x32-bit DTCM interfaces
The following memory interfaces are supported:
• Separate Instruction and Data buses (Harvard Architecture) to optimize CPU latency
• Tightly Coupled Memory (TCM) interface designed for fast and deterministic SRAM
accesses
• AXI Bus interface to optimize Burst transfers
• Dedicated low-latency AHB-Lite peripheral bus (AHBP) to connect to peripherals.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
It also supports single and double precision FPU (floating point unit) speeds up software
development by using metalanguage development tools, while avoiding saturation.
Figure 1 shows the general block diagram of the STM32H725xE/G family.
3.2 Memory protection unit (MPU)

The memory protection unit (MPU) manages the CPU access rights and the attributes of the
system resources. It has to be programmed and enabled before use. Its main purposes are
to prevent an untrusted user program to accidentally corrupt data used by the OS and/or by
a privileged task, but also to protect data processes or read-protect memory regions.
The MPU defines access rules for privileged accesses and user program accesses. It
allows defining up to 16 protected regions that can in turn be divided into up to 8
independent subregions, where region address, size, and attributes can be configured. The
protection area ranges from 32 bytes to 4 Gbytes of addressable memory.
When an unauthorized access is performed, a memory management exception is
generated.
22/282 DS13311 Rev 3

STM32H725xE/G Functional overview
3.3 Memories
3.3.1 Embedded Flash memory

The STM32H725xE/G devices embed up to 1 Mbyte of Flash memory that can be used for
storing programs and data.
The Flash memory is organized as 266-bit Flash words memory that can be used for storing
both code and data constants. Each word consists of:
• one Flash word (8 words, 32 bytes or 256 bits)
• 10 ECC bits (single-error correction and double-error detection).
The Flash memory is organized as follows:
• up to 1 Mbyte of user Flash memory block containing eight user sectors of 128 Kbytes
(4 K Flash memory words)
• 128 Kbytes of system Flash memory from which the device can boot
• 2 Kbytes (64 Flash words) of user option bytes for user configuration
3.3.2 Embedded SRAM

All devices feature:
• from 128 to 320 Kbytes of AXI-SRAM mapped onto the AXI bus on D1 domain
• SRAM1 mapped on D2 domain: 16 Kbytes
• 4 Kbytes of backup SRAM
The content of this area is protected against possible unwanted write accesses, and
can be retained in Standby or VBAT mode.
• RAM mapped to TCM interface (ITCM and DTCM):
Both ITCM and DTCM RAMs are 0 wait state memories. They can be accessed either
from the CPU or the MDMA (even in Sleep mode) through a specific AHB slave of the
Cortex®-M7CPU(AHBSAHBP):
– 64 to 256 Kbytes of ITCM-RAM (instruction RAM)
This RAM is connected to ITCM 64-bit interface designed for execution of critical
real-times routines by the CPU.
– 128 Kbytes of DTCM-RAM (2x 64-Kbyte DTCM-RAMs on 2x32-bit DTCM ports)
The DTCM-RAM could be used for critical real-time data, such as interrupt service
routines or stack/heap memory. Both DTCM-RAMs can be used in parallel (for
load/store operations) thanks to the Cortex®-M7 dual issue capability.
The MDMA can be used to load code or data in ITCM or DTCM RAMs. As reflected
above, 192 Kbyte of RAM can be used either for AXI SRAM or ITCM, with a 64Kbyte
granularity.
DS13311 Rev 3 23/282

55
Error code correction (ECC)

Over the product lifetime, and/or due to external events such as radiations, invalid bits in
memories may occur. They can be detected and corrected by ECC. This is an expected
behavior that has to be managed at final-application software level in order to ensure data
integrity through ECC algorithms implementation.
SRAM data are protected by ECC:
• 7 ECC bits are added per 32-bit word.
• 8 ECC bits are added per 64-bit word for AXI-SRAM and ITCM-RAM.
The ECC mechanism is based on the SECDED algorithm. It supports single-error correction
and double-error detection.
24/282 DS13311 Rev 3

3.4 Boot modes

At startup, the boot memory space is selected by the BOOT pin and BOOT_ADDx option
bytes, allowing to program any boot memory address from 0x0000 0000 to 0x3FFF FFFF
which includes:
• All Flash address space
• All RAM address space: ITCM, DTCM RAMs and SRAMs
• The System memory bootloader
The boot loader is located in non-user System memory. It is used to reprogram the Flash
memory through a serial interface (USART, I2C, SPI, FDCAN, USB-DFU). Refer to
application note AN2606 “STM32 microcontroller System memory Boot mode” for details.
3.5 CORDIC co-processor (CORDIC)

The CORDIC co-processor provides hardware acceleration of certain mathematical
functions, notably trigonometric, commonly used in motor control, metering, signal
processing and many other applications.
It speeds up the calculation of these functions compared to a software implementation,
allowing a lower operating frequency, or freeing up processor cycles in order to perform
other tasks.
The filter mathematical accelerator unit performs arithmetic operations on vectors. It
comprises a multiplier/accumulator (MAC) unit, together with address generation logic,
which allows it to index vector elements held in local memory.
The unit includes support for circular buffers on input and output, which allows digital filters
to be implemented. Both finite and infinite impulse response filters can be realized.
The unit allows frequent or lengthy filtering operations to be offloaded from the CPU, freeing
up the processor for other tasks. In many cases it can accelerate such calculations
compared to a software implementation, resulting in a speed-up of time critical tasks.
CORDIC features
• 24-bit CORDIC rotation engine
• Circular and Hyperbolic modes
• Rotation and Vectoring modes
• Functions: Sine, Cosine, Sinh, Cosh, Atan, Atan2, Atanh, Modulus, Square root,
Natural logarithm
• Programmable precision up to 20-bit
• Fast convergence: 4 bits per clock cycle
• Supports 16-bit and 32-bit fixed point input and output formats
• Low latency AHB slave interface
• Results can be read as soon as ready without polling or interrupt
• DMA read and write channels
DS13311 Rev 3 25/282

55
3.6 Filter mathematical accelerator (FMAC)

The filter mathematical accelerator unit performs arithmetic operations on vectors. It
comprises a multiplier/accumulator (MAC) unit, together with address generation logic,
which allows it to index vector elements held in local memory.
The unit includes support for circular buffers on input and output, which allows digital filters
to be implemented. Both finite and infinite impulse response filters can be realized.
The unit allows frequent or lengthy filtering operations to be offloaded from the CPU, freeing
up the processor for other tasks. In many cases it can accelerate such calculations
compared to a software implementation, resulting in a speed-up of time critical tasks.
FMAC features
• 16 x 16-bit multiplier
• 24+2-bit accumulator with addition and subtraction
• 16-bit input and output data
• 256 x 16-bit local memory
• Up to three areas can be defined in memory for data buffers (two input, one output),
defined by programmable base address pointers and associated size registers
• Input and output sample buffers can be circular
• Buffer “watermark” feature reduces overhead in interrupt mode
• Filter functions: FIR, IIR (direct form 1)
• AHB slave interface
• DMA read and write data channels
3.7 Power supply management
3.7.1 Power supply scheme

STM32H725xE/G power supply voltages are the following:
• VDD = 1.62 to 3.6 V: external power supply for I/Os, provided externally through VDD
pins.
• VDDLDO = 1.62 to 3.6 V: supply voltage for the internal regulator supplying VCORE
• VDDA = 1.62 to 3.6 V: external analog power supplies for ADC, DAC, COMP and
OPAMP.
• VDD33USB: allows the support of a VDD supply different from 3.3 V while powering the
USB transceiver with 3.3V on VDD33USB.
• VDD50USB can be supplied through the USB cable to generate the VDD33USB via the
USB internal regulator. This allows support of a VDD supply different to 3.3 V.
The USB regulator can be bypassed to supply directly VDD33USB if VDD = 3.3 V.
• VBAT = 1.2 to 3.6 V: power supply for the VSW domain when VDD is not present.
• VCAP: VCORE supply voltage, which values depend on voltage scaling (1.0 V, 1.1 V,
1.2 V or 1.35 V). They are configured through VOS bits in PWR_D3CR register. The
26/282 DS13311 Rev 3

VCORE domain is split into the following power domains that can be independently
switch off.
– D1 domain containing some peripherals and the Cortex®-M7 core
– D2 domain containing a large part of the peripherals
– D3 domain containing some peripherals and the system control
• VDDSMPS= 1.62 V to 3.6 V: SMPS step-down converter power supply VDDSMPS
must be kept at the same voltage level as VDD
• VLXSMPS = SMPS step-down converter output coupled to an inductor
• VFBSMPS = VCORE or 1.8 V or 2.5 V external SMPS step-down converter feedback
voltage sense input.
During power-up and power-down phases, the following power sequence requirements
must be respected (see Figure 2):
• When VDD is below VDDmin, other power supplies (VDDA, VDD33USB, VDD50USB) must
remain below VDD + 300 mV.
• When VDD is above VDDmin, all power supplies are independent.
During the power-down phase, VDD can temporarily become lower than other supplies only
if the energy provided to the microcontroller remains below 1 mJ. This allows external
decoupling capacitors to be discharged with different time constants during the power-down
transient phase.
Figure 2. Power-up/power-down sequence
3.6
VDDX(1)
VDD
VBOR0
0.3
Power-on Operating mode Power-down time
Invalid supply area VDDX < VDD + 300 mV VDDX independent from VDD
MSv47490V1
1. VDDx refers to any power supply among VDDA, VDD33USB, VDD50USB.
DS13311 Rev 3 27/282

55
3.7.2 Power supply supervisor

The devices have an integrated power-on reset (POR)/ power-down reset (PDR) circuitry
coupled with a Brownout reset (BOR) circuitry:
• Power-on reset (POR)
The POR supervisor monitors VDD power supply and compares it to a fixed threshold.
The devices remain in Reset mode when VDD is below this threshold,
• Power-down reset (PDR)
The PDR supervisor monitors VDD power supply. A reset is generated when VDD drops
below a fixed threshold.
The PDR supervisor can be enabled/disabled through PDR_ON pin.
• Brownout reset (BOR)
The BOR supervisor monitors VDD power supply. Three BOR thresholds (from 2.1 to
2.7 V) can be configured through option bytes. A reset is generated when VDD drops
below this threshold.
28/282 DS13311 Rev 3

3.7.3 Voltage regulator

The same voltage regulator supplies the 3 power domains (D1, D2 and D3). D1 and D2 can
be independently switched off.
Voltage regulator output can be adjusted according to application needs through 6 power
supply levels:
• Run mode (VOS0 to VOS3)
– Scale 0: boosted performance
– Scale 1: high performance
– Scale 2: medium performance and consumption
– Scale 3: optimized performance and low-power consumption
• Stop mode (SVOS3 to SVOS5)
– Scale 3: peripheral with wakeup from Stop mode capabilities (UART, SPI, I2C,
LPTIM) are operational
– Scale 4 and 5 where the peripheral with wakeup from Stop mode is disabled. The
peripheral functionality is disabled but wakeup from Stop mode is possible through
GPIO or asynchronous interrupt.
3.8 Low-power strategy

There are several ways to reduce power consumption on STM32H725xE/G:
• Decrease the dynamic power consumption by slowing down the system clocks even in
Run mode and by individually clock gating the peripherals that are not used.
• Save power when the CPU is idle, by selecting among the available low-power modes
according to the user application needs. This allows the best compromise between
short startup time and low power consumption to be achieved, according to the
available wakeup sources.
The devices feature several low-power modes:
• CSleep (CPU clock stopped)
• CStop (CPU sub-system clock stopped)
• DStop (Domain bus matrix clock stopped)
• Stop (System clock stopped)
• DStandby (Domain powered down)
• Standby (System powered down)
CSleep and CStop low-power modes are entered by the MCU when executing the WFI
(Wait for Interrupt) or WFE (Wait for Event) instructions, or when the SLEEPONEXIT bit of
the Cortex®-Mx core is set after returning from an interrupt service routine.
A domain can enter low-power mode (DStop or DStandby) when the processor, its
subsystem and the peripherals allocated in the domain enter low-power mode.
If part of the domain is not in low-power mode, the domain remains in the current mode.
Finally the system can enter Stop or Standby when all EXTI wakeup sources are cleared
and the power domains are in DStop or DStandby mode.
DS13311 Rev 3 29/282

55
Table 3. System versus domain low-power mode

System power mode D1 domain power mode D2 domain power mode D3 domain power mode
Run DRun/DStop/DStandby DRun/DStop/DStandby DRun

Stop DStop/DStandby DStop/DStandby DStop
Standby DStandby DStandby DStandby
3.9 Reset and clock controller (RCC)

The clock and reset controller is located in D3 domain. The RCC manages the generation of
all the clocks, as well as the clock gating and the control of the system and peripheral
resets. It provides a high flexibility in the choice of clock sources and allows to apply clock
ratios to improve the power consumption. In addition, on some communication peripherals
that are capable to work with two different clock domains (either a bus interface clock or a
kernel peripheral clock), thus the system frequency can be changed without modifying the
baudrate.
3.9.1 Clock management

The devices embed four internal oscillators, two oscillators with external crystal or
resonator, two internal oscillators with fast startup time and three PLLs.
The RCC receives the following clock source inputs:
• Internal oscillators:
– 64 MHz HSI clock
– 48 MHz RC oscillator
– 4 MHz CSI clock
– 32 kHz LSI clock
• External oscillators:
– HSE clock: 4-50 MHz (generated from an external source) or 4-48 MHz(generated
from a crystal/ceramic resonator)
– LSE clock: 32.768 kHz
The RCC provides three PLLs: one for system clock, two for kernel clocks.
The system starts on the HSI clock. The user application can then select the clock
configuration.
30/282 DS13311 Rev 3

3.9.2 System reset sources

Power-on reset initializes all registers while system reset reinitializes the system except for
the debug, part of the RCC and power controller status registers, as well as the backup
power domain.
A system reset is generated in the following cases:
• Power-on reset (pwr_por_rst)
• Brownout reset
• Low level on NRST pin (external reset)
• Window watchdog
• Independent watchdog
• Software reset
• Low-power mode security reset
• Exit from Standby
3.10 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
After reset, all GPIOs (except debug pins) are in Analog mode to reduce power
consumption (refer to GPIOs register reset values in the device reference manual).
The I/O configuration can be locked if needed by following a specific sequence in order to
avoid spurious writing to the I/Os registers.
3.11 Bus-interconnect matrix

The devices feature an AXI bus matrix, two AHB bus matrices and bus bridges that allow
the interconnection of bus masters with bus slaves (see Figure 3).
DS13311 Rev 3 31/282

55
Figure 3. STM32H725xE/G bus matrix
32/282
Functional overview
AHBS
ITCM
CPU 64 Kbyte
Cortex-M7 OR
ITCM
I$ D$ 192 Kbyte
Ethernet
32KB 32KB DTCM DMA1 DMA2 MAC SDMMC2 USBHS1
128 Kbyte
AXIM
AHBP
DMA1_PERIPH
DMA2_PERIPH
DMA1_MEM
DMA2_MEM
SDMMC1 MDMA DMA2D LTDC
D1-to-D2 AHB
AXI SRAM
192K byte SRAM1 16
Kbyte
SRAM2 16
Kbyte
Flash A
Up to 1 Mbyte
AHB1
AXI SRAM
128 Kbyte
DS13311 Rev 3
AHB2
OCTOSPI1
OCTOSPI2 APB1
FMC APB2
AHB3 APB3
64-bit AXI bus matrix 32-bit AHB bus matrix

D1 domain D2 domain
D2-to-D1 AHB
D2-to-D3 AHB
D1-to-D3 AHB
BDMA
32-bit AHB bus matrix
D3 domain
STM32H725xE/G
Legend
AHB4 APB4
TCM AHB
32-bit bus AXI APB SRAM4
64-bit bus Master interface 16 Kbyte
Bus multiplexer Slave interface Backup

SRAM
4 Kbyte
MSv65325V2
3.12 DMA controllers

The devices feature four DMA instances and a DMA request router to unload CPU activity:
• A master direct memory access (MDMA)
The MDMA is a high-speed DMA controller, which is in charge of all types of memory
transfers (peripheral to memory, memory to memory, memory to peripheral), without
any CPU action. It features a master AXI interface and a dedicated AHB interface to
access Cortex®-M7 TCM memories.
The MDMA is located in D1 domain. It is able to interface with the other DMA
controllers located in D2 domain to extend the standard DMA capabilities, or can
manage peripheral DMA requests directly.
Each of the 16 channels can perform single block transfers, repeated block transfers
and linked list transfers.
• Two dual-port DMAs (DMA1, DMA2) located in D2 domain, with FIFO and request
router capabilities.
• One basic DMA (BDMA) located in D3 domain, with request router capabilities.
• A DMA request multiplexer (DMAMUX)
The DMA request router could be considered as an extension of the DMA controller. It
routes the DMA peripheral requests to the DMA controller itself. This allowing
managing the DMA requests with a high flexibility, maximizing the number of DMA
requests that run concurrently, as well as generating DMA requests from peripheral
output trigger or DMA event.
3.13 Chrom-ART Accelerator (DMA2D)

The Chrom-Art Accelerator (DMA2D) is a specialized DMA dedicated to image manipulation.
It can perform the following operations:
• Filling a part or the whole of a destination image with a specific color
• Copying a part or the whole of a source image into a part or the whole of a destination
• image
• Copying a part or the whole of a source image into a part or the whole of a destination
• image with a pixel format conversion
• Blending a part and/or two complete source images with different pixel format and copy
• the result into a part or the whole of a destination image with a different color format.
• All the classical color coding schemes are supported from 4-bit up to 32-bit per pixel
with indexed or direct color mode, including block based YCbCr to handle JPEG
decoder output.
• The DMA2D has its own dedicated memories for CLUTs (color look-up tables).
An interrupt can be generated when an operation is complete or at a programmed
watermark.
All the operations are fully automated and are running independently from the CPU or the
DMAs.
DS13311 Rev 3 33/282

55
3.14 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller which is able to manage 16
priority levels, and handle up to 140 maskable interrupt channels plus the 16 interrupt lines
of the Cortex®-M7 with FPU core.
• Closely coupled NVIC gives low-latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Allows early processing of interrupts
• Processing of late arriving, higher-priority interrupts
• Support tail chaining
• Processor context automatically saved on interrupt entry, and restored on interrupt exit
with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.
3.15 Extended interrupt and event controller (EXTI)

The EXTI controller performs interrupt and event management. In addition, it can wake up
the processor, power domains and/or D3 domain from Stop mode.
The EXTI handles up to 80 independent event/interrupt lines split as 26 configurable events
and 54 direct events.
Configurable events have dedicated pending flags, active edge selection, and software
trigger capable.
Direct events provide interrupts or events from peripherals having a status flag.
3.16 Cyclic redundancy check calculation unit (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
programmable polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at link-
time and stored at a given memory location.
34/282 DS13311 Rev 3

3.17 Flexible memory controller (FMC)

The FMC controller main features are the following:
• Interface with static-memory mapped devices including:
– Static random access memory (SRAM)
– NOR Flash memory/OneNAND Flash memory
– PSRAM (4 memory banks)
– NAND Flash memory with ECC hardware to check up to 8 Kbytes of data
• Interface with synchronous DRAM (SDRAM/Mobile LPSDR SDRAM) memories
• 8-,16-, 24-bit data bus width
• Independent Chip Select control for each memory bank
• Independent configuration for each memory bank
• Write FIFO
• Read FIFO for SDRAM controller
• The maximum FMC_CLK/FMC_SDCLK frequency for synchronous accesses is the
FMC kernel clock divided by 2.
3.18 Octo-SPI memory interface (OCTOSPI)

The OCTOSPI is a specialized communication interface targeting single, dual, quad or octal
SPI memories. The STM32H725xE/G embeds two separate Octo-SPI interfaces.
Each OCTOSPI instance supports single/dual/quad/octal SPI formats. multiplexing of
single/dual/quad/octal SPI over the same bus can be achieved using the integrated Octo-
SPI I/O manager (OCTOSPIM).
The OCTOSPI can operate in any of the three following modes:
• Indirect mode: all the operations are performed using the OCTOSPI registers
• Status-polling mode: the external memory status register is periodically read and an
interrupt can be generated in case of flag setting
• Memory-mapped mode: the external memory is memory mapped and it is seen by the
system as if it was an internal memory supporting both read and write operations.
The OCTOSPI supports two frame formats supported by most external serial memories
such as serial PSRAMs, serial NAND and serial NOR Flash memories, Hyper RAMs and
Hyper Flash memories.
Multi chip package (MCP) combining any of the above mentioned memory types can also
be supported.
• The classical frame format with the command, address, alternate byte, dummy cycles
and data phase
• The HyperBus™ frame format.
DS13311 Rev 3 35/282

55
3.19 Analog-to-digital converters (ADCs)

STM32H725xE/G devices embed three analog-to-digital converters, two of 16-bit resolution,
and the third of 12-bit resolution. The 16-bit resolution ADCs can be configured as 16, 14,
12, 10 or 8 bits. The 12-bit resolution ADC can be configured to 12, 10 or 8 bits.
Each ADC shares up to 20 external channels, performing conversions in Single-shot or
Scan mode. In Scan mode, automatic conversion is performed on a selected group of
analog inputs.
Additional logic functions embedded in the ADC interface allow:
• simultaneous sample and hold
• Interleaved sample and hold
The ADC can be served by the DMA controller, thus allowing automatic transfer of ADC
converted values to a destination location without any software action.
In addition, an analog watchdog feature can accurately monitor the converted voltage of
one, some, or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs can be triggered by any of the TIM1,
TIM2, TIM3, TIM4, TIM6, TIM8, TIM15, TIM23, TIM24, and LPTIM1 timers.
3.20 Temperature sensor

STM32H725xE/G devices embed a temperature sensor that generates a voltage (VTS) that
varies linearly with the temperature. This temperature sensor is internally connected to
ADC3_IN17. The conversion range is between 1.7 V and 3.6 V. It can measure the device
junction temperature ranging from − 40 to +125°C.
The temperature sensor have a good linearity, but it has to be calibrated to obtain a good
overall accuracy of the temperature measurement. As the temperature sensor offset varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only. To improve the accuracy of
the temperature sensor measurement, each device is individually factory-calibrated by ST.
The temperature sensor factory calibration data are stored by ST in the System memory
area, which is accessible in Read-only mode.
3.21 Digital temperature sensor (DTS)

STM32H725xE/G devices embed a sensor that converts the temperature into a square
wave the frequency of which is proportional to the temperature. The PCLK or the LSE clock
can be used as the reference clock for the measurements. A formula given in the product
reference manual allows calculation of the temperature according to the measured
frequency stored in the DTS_DR register.
36/282 DS13311 Rev 3

3.22 VBAT operation

The VBAT power domain contains the RTC, the backup registers and the backup SRAM.
To optimize battery duration, this power domain is supplied by VDD when available or by the
voltage applied on VBAT pin (when VDD supply is not present). VBAT power is switched
when the PDR detects that VDD dropped below the PDR level.
The voltage on the VBAT pin could be provided by an external battery, a supercapacitor or
directly by VDD, in which case, the VBAT mode is not functional.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.
Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
When PDR_ON pin is connected to VSS (Internal Reset OFF), the VBAT functionality is no
more available and VBAT pin should be connected to VDD.
3.23 Digital-to-analog converters (DAC)

The two 12-bit buffered DAC channels can be used to convert two digital signals into two
analog voltage signal outputs.
This dual digital Interface supports the following features:
• two DAC converters: one for each output channel
• 8-bit or 12-bit monotonic output
• left or right data alignment in 12-bit mode
• synchronized update capability
• noise-wave generation
• triangular-wave generation
• dual DAC channel independent or simultaneous conversions
• DMA capability for each channel including DMA underrun error detection
• external triggers for conversion
• input voltage reference VREF+ or internal VREFBUF reference.
The DAC channels are triggered through the timer update outputs that are also connected
to different DMA streams.
DS13311 Rev 3 37/282

55
3.24 Ultra-low-power comparators (COMP)

STM32H725xE/G devices embed two rail-to-rail comparators (COMP1 and COMP2). They
feature programmable reference voltage (internal or external), hysteresis and speed (low
speed for low-power) as well as selectable output polarity.
The reference voltage can be one of the following:
• An external I/O
• A DAC output channel
• An internal reference voltage or submultiple (1/4, 1/2, 3/4).
All comparators can wake up from Stop mode, generate interrupts and breaks for the timers,
and be combined into a window comparator.
3.25 Operational amplifiers (OPAMP)

STM32H725xE/G devices embed two rail-to-rail operational amplifiers (OPAMP1 and
OPAMP2) with external or internal follower routing and PGA capability.
The operational amplifier main features are:
• PGA with a non-inverting gain ranging of 2, 4, 8 or 16 or inverting gain ranging of -1, -3,
-7 or -15
• One positive input connected to DAC
• Output connected to internal ADC
• Low input bias current down to 1 nA
• Low input offset voltage down to 1.5 mV
• Gain bandwidth up to 7.3 MHz
The devices embeds two operational amplifiers (OPAMP1 and OPAMP2) with two inputs
and one output each. These three I/Os can be connected to the external pins, thus enabling
any type of external interconnections. The operational amplifiers can be configured
internally as a follower, as an amplifier with a non-inverting gain ranging from 2 to 16 or with
inverting gain ranging from -1 to -15.
38/282 DS13311 Rev 3

3.26 Digital filter for sigma-delta modulators (DFSDM)

The devices embed one DFSDM with 4 digital filters modules and 8 external input serial
channels (transceivers) or alternately 8 internal parallel inputs support.
The DFSDM peripheral is dedicated to interface the external Σ∆ modulators to
microcontroller and then to perform digital filtering of the received data streams (which
represent analog value on Σ∆ modulators inputs). DFSDM can also interface PDM (Pulse
Density Modulation) microphones and perform PDM to PCM conversion and filtering in
hardware. DFSDM features optional parallel data stream inputs from internal ADC
peripherals or microcontroller memory (through DMA/CPU transfers into DFSDM).
DFSDM transceivers support several serial interface formats (to support various Σ∆
modulators). DFSDM digital filter modules perform digital processing according user
selected filter parameters with up to 24-bit final ADC resolution.
The DFSDM peripheral supports:
• 8 multiplexed input digital serial channels:
– configurable SPI interface to connect various SD modulator(s)
– configurable Manchester coded 1 wire interface support
– PDM (Pulse Density Modulation) microphone input support
– maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)
– clock output for SD modulator(s): 0..20 MHz
• alternative inputs from 8 internal digital parallel channels (up to 16 bit input resolution):
– internal sources: ADC data or memory data streams (DMA)
• 4 digital filter modules with adjustable digital signal processing:
– Sincx filter: filter order/type (1..5), oversampling ratio (up to 1..1024)
– integrator: oversampling ratio (1..256)
• up to 24-bit output data resolution, signed output data format
• automatic data offset correction (offset stored in register by user)
• continuous or single conversion
• start-of-conversion triggered by:
– software trigger
– internal timers
– external events
– start-of-conversion synchronously with first digital filter module (DFSDM0)
• analog watchdog feature:
– low value and high value data threshold registers
– dedicated configurable Sincx digital filter (order = 1..3, oversampling ratio = 1..32)
– input from final output data or from selected input digital serial channels
– continuous monitoring independently from standard conversion
• short circuit detector to detect saturated analog input values (bottom and top range):
– up to 8-bit counter to detect 1..256 consecutive 0’s or 1’s on serial data stream
– monitoring continuously each input serial channel
• break signal generation on analog watchdog event or on short circuit detector event
DS13311 Rev 3 39/282

55
• extremes detector:
– storage of minimum and maximum values of final conversion data
– refreshed by software
• DMA capability to read the final conversion data
• interrupts: end of conversion, overrun, analog watchdog, short circuit, input serial
channel clock absence
• “regular” or “injected” conversions:
– “regular” conversions can be requested at any time or even in Continuous mode
without having any impact on the timing of “injected” conversions
– “injected” conversions for precise timing and with high conversion priority
• Pulse skipper feature to support beamforming applications (delay-line like behavior).
Table 4. DFSDM implementation

DFSDM features DFSDM1
Number of filters 4
Number of input
8
transceivers/channels
Internal ADC parallel input X
Number of external triggers 16
Regular channel information in
X
identification register
40/282 DS13311 Rev 3

3.27 Digital camera interface (DCMI)

The devices embed a camera interface that can connect with camera modules and CMOS
sensors through an 8-bit to 14-bit parallel interface, to receive video data. The camera
interface can achieve a data transfer rate up to 140 Mbyte/s using a 80 MHz pixel clock. It
features:
• Programmable polarity for the input pixel clock and synchronization signals
• Parallel data communication can be 8-, 10-, 12- or 14-bit
• Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2
progressive video, RGB 565 progressive video or compressed data (like JPEG)
• Supports Continuous mode or Snapshot (a single frame) mode
• Capability to automatically crop the image
3.28 PSSI
The PSSI is a generic synchronous 8-/16-bit parallel data input/output slave interface. It
allows the transmitter to send a data valid signal to indicate when the data is valid, and the
receiver to output a flow control signal to indicate when it is ready to sample the data.
The main PSSI features are:
• Slave mode operation
• 8- or 16-bit parallel data input or output
• 8-word (32-byte) FIFO
• Data enable (DE) alternate function input and Ready (RDY) alternate function output.
When enabled, these signals can either allow the transmitter to indicate when the data is
valid or, the receiver to indicate when it is ready to sample the data, or both.
The PSSI shares most of its circuitry with the digital camera interface (DCMI). It therefore
cannot be used simultaneously with the DCMI.
3.29 LCD-TFT controller

The LCD-TFT display controller provides a 24-bit parallel digital RGB (Red, Green, Blue)
and delivers all signals to interface directly to a broad range of LCD and TFT panels up to
XGA (1024 x 768) resolution with the following features:
• 2 display layers with dedicated FIFO (64x64-bit)
• Color Look-Up table (CLUT) up to 256 colors (256x24-bit) per layer
• Up to 8 input color formats selectable per layer
• Flexible blending between two layers using alpha value (per pixel or constant)
• Flexible programmable parameters for each layer
• Color keying (transparency color)
• Up to 4 programmable interrupt events
• AXI master interface with burst of 16 words
DS13311 Rev 3 41/282

55
3.30 True random number generator (RNG)

The RNG is a true random number generator that provides full entropy outputs to the
application as 32-bit samples. It is composed of a live entropy source (analog) and an
internal conditioning component.
The RNG can be used to construct a Non-deterministic Random Bit Generator (NDRBG), as
a NIST SP 800-90B compliant entropy source.
The RNG true random number generator has been tested using German BSI statistical tests
of AIS-31 (T0 to T8), and NIST SP800-90B statistical test suite.
42/282 DS13311 Rev 3

3.31 Timers and watchdogs

The devices include two advanced-control timers, twelve general-purpose timers, two basic
timers, five low-power timers, two watchdogs and a SysTick timer.
All timer counters can be frozen in Debug mode.
Table 5 compares the features of the advanced-control, general-purpose and basic timers.
Table 5. Timer feature comparison

Max
Max
DMA Capture/ Comple- timer
Timer Counter Counter Prescaler interface
Timer request compare mentary clock
type resolution type factor clock
generation channels output (MHz)
(MHz) (1)
Any
Up, integer
Advanced TIM1,
16-bit Down, between 1 Yes 4 Yes 137.5 275
-control TIM8
Up/down and
65536
Any
TIM2,
Up, integer
TIM5,
32-bit Down, between 1 Yes 4 No 137.5 275
TIM23,
Up/down and
TIM24
65536
Any
Up, integer
TIM3,
16-bit Down, between 1 Yes 4 No 137.5 275
TIM4
Up/down and
65536
Any
integer
TIM12 16-bit Up between 1 No 2 No 137.5 275
and
General 65536
purpose Any
integer
TIM13,
16-bit Up between 1 No 1 No 137.5 275
TIM14
and
65536
Any
integer
TIM15 16-bit Up between 1 Yes 2 1 137.5 275
and
65536
Any
integer
TIM16,
16-bit Up between 1 Yes 1 1 137.5 275
TIM17
and
65536
DS13311 Rev 3 43/282

55
Table 5. Timer feature comparison (continued)

Max
Max
DMA Capture/ Comple- timer
Timer Counter Counter Prescaler interface
Timer request compare mentary clock
type resolution type factor clock
generation channels output (MHz)
(MHz) (1)
Any
integer
TIM6,
Basic 16-bit Up between 1 Yes 0 No 137.5 275
TIM7
and
65536
LPTIM1,
Low- LPTIM2, 1, 2, 4, 8,
power LPTIM3, 16-bit Up 16, 32, No 0 No 137.5 275
timer LPTIM4, 64, 128
LPTIM5
1. The maximum timer clock is up to 550 MHz depending on theTIMPRE bit in the RCC_CFGR register and D2PRE1/2 bits in
RCC_D2CFGR register.
44/282 DS13311 Rev 3

3.31.1 Advanced-control timers (TIM1, TIM8)

The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators
multiplexed on 6 channels. They have complementary PWM outputs with programmable
inserted dead times. They can also be considered as complete general-purpose timers.
Their 4 independent channels can be used for:
• Input capture
• Output compare
• PWM generation (Edge- or Center-aligned modes)
• One-pulse mode output
If configured as standard 16-bit timers, they have the same features as the general-purpose
TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0-
100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link
feature for synchronization or event chaining.
TIM1 and TIM8 support independent DMA request generation.
3.31.2 General-purpose timers (TIMx)

There are ten synchronizable general-purpose timers embedded in the STM32H725xE/G
devices (see Table 5: Timer feature comparison for differences).
• TIM2, TIM3, TIM4, TIM5, TIM23, TIM24
The devices include 4 full-featured general-purpose timers: TIM2, TIM3, TIM4, TIM5,
TIM23 and TIM24. TIM2, TIM5, TIM23 and TIM24 are based on a 32-bit auto-reload
up/downcounter and a 16-bit prescaler while TIM3 and TIM4 are based on a 16-bit
auto-reload up/downcounter and a 16-bit prescaler. All timers feature 4 independent
channels for input capture/output compare, PWM or One-pulse mode output. This
gives up to 24 input capture/output compare/PWMs on the largest packages.
TIM2, TIM3, TIM4, TIM5, TIM23 and TIM24 general-purpose timers can work together,
or with the other general-purpose timers and the advanced-control timers TIM1 and
TIM8 via the Timer Link feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5, TIM23, and TIM24 all have independent DMA request
generation. They are capable of handling quadrature (incremental) encoder signals
and the digital outputs from 1 to 4 hall-effect sensors.
• TIM12, TIM13, TIM14, TIM15, TIM16, TIM17
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM13, TIM14, TIM16 and TIM17 feature one independent channel, whereas TIM12
and TIM15 have two independent channels for input capture/output compare, PWM or
One-pulse mode output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5,
TIM23, and TIM24 full-featured general-purpose timers or used as simple time bases.
DS13311 Rev 3 45/282

55
3.31.3 Basic timers TIM6 and TIM7

These timers are mainly used for DAC trigger and waveform generation. They can also be
used as a generic 16-bit time base.
TIM6 and TIM7 support independent DMA request generation.
3.31.4 Low-power timers (LPTIM1, LPTIM2, LPTIM3, LPTIM4, LPTIM5)

The low-power timers have an independent clock and is running also in Stop mode if it is
clocked by LSE, LSI or an external clock. It is able to wakeup the devices from Stop mode.
This low-power timer supports the following features:
• 16-bit up counter with 16-bit autoreload register
• 16-bit compare register
• Configurable output: pulse, PWM
• Continuous / One-shot mode
• Selectable software / hardware input trigger
• Selectable clock source:
• Internal clock source: LSE, LSI, HSI or APB clock
• External clock source over LPTIM input (working even with no internal clock source
running, used by the Pulse Counter Application)
• Programmable digital glitch filter
• Encoder mode
3.31.5 Independent watchdog

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.
A window option allows the device to be reset when a reload operation is made too early
after the previous reload.
3.31.6 Window watchdog

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
Debug mode.
3.31.7 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
• A 24-bit down counter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source.
46/282 DS13311 Rev 3

3.32 Real-time clock (RTC), backup SRAM and backup registers

The RTC is an independent BCD timer/counter. It supports the following features:
• Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
• Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
• Two programmable alarms.
• On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
• Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
• Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy.
• Three anti-tamper detection pins with programmable filter.
• Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to
VBAT mode.
• 17-bit auto-reload wakeup timer (WUT) for periodic events with programmable
resolution and period.
The RTC and the 32 backup registers are supplied through a switch that takes power either
from the VDD supply when present or from the VBAT pin.
The backup registers are 32-bit registers used to store 128 bytes of user application data
when VDD power is not present. They are not reset by a system or power reset, or when the
device wakes up from Standby mode.
The RTC clock sources can be:
• A 32.768 kHz external crystal (LSE)
• An external resonator or oscillator (LSE)
• The internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
• The high-speed external clock (HSE) divided by 32.
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the
LSE. When clocked by the LSI, the RTC is not functional in VBAT mode, but is functional in
all low-power modes.
All RTC events (Alarm, Wakeup Timer, Timestamp or Tamper) can generate an interrupt and
wakeup the device from the low-power modes.
DS13311 Rev 3 47/282

55
3.33 Inter-integrated circuit interface (I2C)

STM32H725xE/G devices embed five I2C interfaces.
The I2C bus interface handles communications between the microcontroller and the serial
I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
• I2C-bus specification and user manual rev. 5 compatibility:
– Slave and Master modes, multimaster capability
– Standard-mode (Sm), with a bitrate up to 100 kbit/s
– Fast-mode (Fm), with a bitrate up to 400 kbit/s
– Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and 20 mA output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– Programmable setup and hold times
– Optional clock stretching
• System Management Bus (SMBus) specification rev 2.0 compatibility:
– Hardware PEC (Packet Error Checking) generation and verification with ACK
control
– Address resolution protocol (ARP) support
– SMBus alert
• Power System Management Protocol (PMBusTM) specification rev 1.1 compatibility
• Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent from the PCLK reprogramming.
• Wakeup from Stop mode on address match
• Programmable analog and digital noise filters
• 1-byte buffer with DMA capability
3.34 Universal synchronous/asynchronous receiver transmitter

(USART)
STM32H725xE/G devices have five embedded universal synchronous receiver transmitters
(USART1, USART2, USART3, USART6, and USART10) and five universal asynchronous
receiver transmitters (UART4, UART5, UART7, UART8, and UART9). Refer to Table 6:
USART features for a summary of USARTx and UARTx features.
These interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire Half-duplex communication mode and
have LIN Master/Slave capability. They provide hardware management of the CTS and RTS
signals, and RS485 Driver Enable. They are able to communicate at speeds of up to
17 Mbit/s.
USART1, USART2, USART3, USART6, and USART10 also provide Smartcard mode (ISO
7816 compliant) and SPI-like communication capability.
The USARTs embed a Transmit FIFO (TXFIFO) and a Receive FIFO (RXFIFO). FIFO mode
is enabled by software and is disabled by default.
48/282 DS13311 Rev 3

All USART have a clock domain independent from the CPU clock, allowing the USARTx to
wake up the MCU from Stop mode.The wakeup from Stop mode is programmable and can
be done on:
• Start bit detection
• Any received data frame
• A specific programmed data frame
• Specific TXFIFO/RXFIFO status when FIFO mode is enabled.
All USART interfaces can be served by the DMA controller.
Table 6. USART features

USART modes/features(1) USART1/2/3/6/10 UART4/5/7/8/9
Hardware flow control for modem X X

Continuous communication using DMA X X
Multiprocessor communication X X
Synchronous mode (Master/Slave) X -
Smartcard mode X -
Single-wire Half-duplex communication X X
IrDA SIR ENDEC block X X
LIN mode X X
Dual clock domain and wakeup from low power mode X X
Receiver timeout interrupt X X
Modbus communication X X
Auto baud rate detection X X
Driver Enable X X
USART data length 7, 8 and 9 bits
Tx/Rx FIFO X X
Tx/Rx FIFO size 16
1. X = supported.
3.35 Low-power universal asynchronous receiver transmitter

(LPUART)
The device embeds one Low-Power UART (LPUART1). The LPUART supports
asynchronous serial communication with minimum power consumption. It supports half
duplex single wire communication and modem operations (CTS/RTS). It allows
multiprocessor communication.
The LPUARTs embed a Transmit FIFO (TXFIFO) and a Receive FIFO (RXFIFO). FIFO
mode is enabled by software and is disabled by default.
DS13311 Rev 3 49/282

55
The LPUART has a clock domain independent from the CPU clock, and can wakeup the
system from Stop mode. The wakeup from Stop mode are programmable and can be done
on:
• Start bit detection
• Any received data frame
• A specific programmed data frame
• Specific TXFIFO/RXFIFO status when FIFO mode is enabled.
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to
9600 baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame
while having an extremely low energy consumption. Higher speed clock can be used to
reach higher baudrates.
LPUART interface can be served by the DMA controller.
3.36 Serial peripheral interface (SPI)/inter- integrated sound

interfaces (I2S)
The devices feature up to six SPIs (SPI2S1, SPI2S2, SPI2S3, SPI4, SPI5 and SPI2S6) that
allow communicating up to 150 Mbits/s in Master and Slave modes, in Half-duplex, Full-
duplex and Simplex modes. The 3-bit prescaler gives 8 master mode frequencies and the
frame is configurable from 4 to 16 bits. All SPI interfaces support NSS pulse mode, TI mode,
Hardware CRC calculation and 8x 8-bit embedded Rx and Tx FIFOs with DMA capability.
Four standard I2S interfaces (multiplexed with SPI1, SPI2, SPI3 and SPI6) are available.
They can be operated in Master or Slave mode, in Simplex communication modes, and can
be configured to operate as a 16-/32-bit resolution input or output channel (except SPI2S6
which is limited to 16 bits). Audio sampling frequencies from 8 kHz up to 192 kHz are
supported. When either or both of the I2S interfaces is/are configured in Master mode, the
master clock can be output to the external DAC/CODEC at 256 times the sampling
frequency. All I2S interfaces support 16x 8-bit embedded Rx and Tx FIFOs with DMA
capability.
3.37 Serial audio interfaces (SAI)

The devices embed 2 SAIs (SAI1, and SAI4) that allow designing many stereo or mono
audio protocols such as I2S, LSB or MSB-justified, PCM/DSP, TDM or AC’97. An SPDIF
output is available when the audio block is configured as a transmitter. To bring this level of
flexibility and reconfigurability, the SAI contains two independent audio sub-blocks. Each
block has it own clock generator and I/O line controller.
Audio sampling frequencies up to 192 kHz are supported.
In addition, up to 8 microphones can be supported thanks to an embedded PDM interface.
The SAI can work in master or slave configuration. The audio sub-blocks can be either
receiver or transmitter and can work synchronously or asynchronously (with respect to the
other one). The SAI can be connected with other SAIs to work synchronously.
50/282 DS13311 Rev 3

3.38 SPDIFRX Receiver Interface (SPDIFRX)

The SPDIFRX peripheral is designed to receive an S/PDIF flow compliant with IEC-60958
and IEC-61937. These standards support simple stereo streams up to high sample rate,
and compressed multi-channel surround sound, such as those defined by Dolby or DTS (up
to 5.1).
The main SPDIFRX features are the following:
• Up to 4 inputs available
• Automatic symbol rate detection
• Maximum symbol rate: 12.288 MHz
• Stereo stream from 32 to 192 kHz supported
• Supports Audio IEC-60958 and IEC-61937, consumer applications
• Parity bit management
• Communication using DMA for audio samples
• Communication using DMA for control and user channel information
• Interrupt capabilities
The SPDIFRX receiver provides all the necessary features to detect the symbol rate, and
decode the incoming data stream. The user can select the wanted SPDIF input, and when a
valid signal will be available, the SPDIFRX will re-sample the incoming signal, decode the
Manchester stream, recognize frames, sub-frames and blocks elements. It delivers to the
CPU decoded data, and associated status flags.
The SPDIFRX also offers a signal named spdif_frame_sync, which toggles at the S/PDIF
sub-frame rate that will be used to compute the exact sample rate for clock drift algorithms.
3.39 Single wire protocol master interface (SWPMI)

The Single wire protocol master interface (SWPMI) is the master interface corresponding to
the Contactless Frontend (CLF) defined in the ETSI TS 102 613 technical specification. The
main features are:
• Full-duplex communication mode
• automatic SWP bus state management (active, suspend, resume)
• configurable bitrate up to 2 Mbit/s
• automatic SOF, EOF and CRC handling
SWPMI can be served by the DMA controller.
DS13311 Rev 3 51/282

55
3.40 Management data input/output (MDIO) slaves

The devices embed an MDIO slave interface it includes the following features:
• 32 MDIO Registers addresses, each of which is managed using separate input and
output data registers:
– 32 x 16-bit firmware read/write, MDIO read-only output data registers
– 32 x 16-bit firmware read-only, MDIO write-only input data registers
• Configurable slave (port) address
• Independently maskable interrupts/events:
– MDIO Register write
– MDIO Register read
– MDIO protocol error
• Able to operate in and wake up from Stop mode
3.41 SD/SDIO/MMC card host interfaces (SDMMC)

Two SDMMC host interfaces are available. They support MultiMediaCard System
Specification Version 4.51 in three different databus modes: 1 bit (default), 4 bits and 8 bits.
Both interfaces support the SD memory card specifications version 4.1. and the SDIO card
specification version 4.0. in two different databus modes: 1 bit (default) and 4 bits.
Each SDMMC host interface supports only one SD/SDIO/MMC card at any one time and a
stack of MMC Version 4.51 or previous.
The SDMMC host interface embeds a dedicated DMA controller allowing high-speed
transfers between the interface and the SRAM.
3.42 Controller area network (FDCAN1, FDCAN2, FDCAN3)

The controller area network (CAN) subsystem consists of two CAN modules, a shared
message RAM memory and a clock calibration unit.
All CAN modules (FDCAN1, FDCAN2, and FDCAN3) are compliant with ISO 11898-1 (CAN
protocol specification version 2.0 part A, B) and CAN FD protocol specification version 1.0.
FDCAN1 supports time triggered CAN (TT-FDCAN) specified in ISO 11898-4, including
event synchronized time-triggered communication, global system time, and clock drift
compensation. The FDCAN1 contains additional registers, specific to the time triggered
feature. The CAN FD option can be used together with event-triggered and time-triggered
CAN communication.
A 10-Kbyte message RAM memory implements filters, receive FIFOs, receive buffers,
transmit event FIFOs, transmit buffers (and triggers for TT-FDCAN). This message RAM is
shared between the three modules - FDCAN1 FDCAN2 and FDCAN3.
The common clock calibration unit is optional. It can be used to generate a calibrated clock
for FDCAN1, FDCAN2 and FDCAN3 from the HSI internal RC oscillator and the PLL, by
evaluating CAN messages received by the FDCAN1.
52/282 DS13311 Rev 3

3.43 Universal serial bus on-the-go high-speed (OTG_HS)

The devices embed an USB OTG high-speed (up to 480 Mbit/s) device/host/OTG peripheral
that supports both full-speed and high-speed operations. It integrates the transceivers for
full-speed operation (12 Mbit/s) and a UTMI low-pin interface (ULPI) for high-speed
operation (480 Mbit/s). When using the USB OTG_HS interface in HS mode, an external
PHY device connected to the ULPI is required.
The USB OTG_HS peripheral is compliant with the USB 2.0 specification and with the OTG
2.0 specification. It features software-configurable endpoint setting and supports
suspend/resume. The USB OTG_HS controller requires a dedicated 48 MHz clock that is
generated by a PLL connected to the HSE oscillator.
The main features are:
• Combined Rx and Tx FIFO size of 4 Kbytes with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 8 bidirectional endpoints
• 16 host channels with periodic OUT support
• Software configurable to OTG1.3 and OTG2.0 modes of operation
• USB 2.0 LPM (Link Power Management) support
• Battery Charging Specification Revision 1.2 support
• Internal FS OTG PHY support
• External HS or HS OTG operation supporting ULPI in SDR mode The OTG PHY is
connected to the microcontroller ULPI port through 12 signals. It can be clocked using
the 60 MHz output.
• Internal USB DMA
• HNP/SNP/IP inside (no need for any external resistor)
• For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
3.44 Ethernet MAC interface with dedicated DMA controller (ETH)

The devices provide an IEEE-802.3-2002-compliant media access controller (MAC) for
ethernet LAN communications through an industry-standard medium-independent interface
(MII) or a reduced medium-independent interface (RMII). The microcontroller requires an
external physical interface device (PHY) to connect to the physical LAN bus (twisted-pair,
fiber, etc.). The PHY is connected to the device MII port using 17 signals for MII or 9 signals
for RMII, and can be clocked using the 25 MHz (MII) from the microcontroller.
DS13311 Rev 3 53/282

55
The devices include the following features:

• Supports 10 and 100 Mbit/s rates
• Dedicated DMA controller allowing high-speed transfers between the dedicated SRAM
and the descriptors
• Tagged MAC frame support (VLAN support)
• Half-duplex (CSMA/CD) and full-duplex operation
• MAC control sublayer (control frames) support
• 32-bit CRC generation and removal
• Several address filtering modes for physical and multicast address (multicast and
group addresses)
• 32-bit status code for each transmitted or received frame
• Internal FIFOs to buffer transmit and receive frames. The transmit FIFO and the
receive FIFO are both 2 Kbytes.
• Supports hardware PTP (precision time protocol) in accordance with IEEE 1588 2008
(PTP V2) with the time stamp comparator connected to the TIM2 input
• Triggers interrupt when system time becomes greater than target time
3.45 High-definition multimedia interface (HDMI)

- consumer electronics control (CEC)
The devices embed a HDMI-CEC controller that provides hardware support for the
Consumer Electronics Control (CEC) protocol (Supplement 1 to the HDMI standard).
This protocol provides high-level control functions between all audiovisual products in an
environment. It is specified to operate at low speeds with minimum processing and memory
overhead. It has a clock domain independent from the CPU clock, allowing the HDMI-CEC
controller to wakeup the MCU from Stop mode on data reception.
3.46 Debug infrastructure

The devices offer a comprehensive set of debug and trace features to support software
development and system integration.
• Breakpoint debugging
• Code execution tracing
• Software instrumentation
• JTAG debug port
• Serial-wire debug port
• Trigger input and output
• Serial-wire trace port
• Trace port
• Arm® CoreSight™ debug and trace components
The debug can be controlled via a JTAG/Serial-wire debug access port, using industry
standard debugging tools. The trace port performs data capture for logging and analysis.
54/282 DS13311 Rev 3

STM32H725xE/G Memory mapping
4 Memory mapping
Refer to the product line reference manual for details on the memory mapping as well as the
boundary addresses for all peripherals.
DS13311 Rev 3 55/282

55
Pinouts, pin descriptions and alternate functions STM32H725xE/G
5 Pinouts, pin descriptions and alternate functions
Figure 4. VFQFPN68 pinout
BOOT0
VCAP
PC12
PC10
PC11
PA15
PA14
VDD
VSS
PD2
PB9
PB8
PB7
PB6
PB5
PB4
PB3
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
VBAT 1 51 VDD
PC14-OSC32_IN 2 50 VSS
PC15-OSC32_OUT 3 49 VCAP
VSSSMPS 4 48 PA13
VLXSMPS 5 47 PA12
VDDSMPS 6 46 PA11
VFBSMPS 7 45 PA10
VSS 8 44 PA9
VDD 9 VFQFPN48 43 PA8
PH0-OSC_IN 10 42 PC9
PH1-OSC_OUT 11 41 PC7
NRST 12 40 PC6
PC0 13 39 PB15
PC1 14 38 PB14
VSSA 15 37 PB13
VDDA 16 Exposed pad 36 PB12
PA0 17 35 VDD
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
VSS
VSS
VDD
PC4
PC5
PB0
PB1
PB2
PB10
VCAP
VSS
PA1
PA2
PA3
PA4
PA5
PA6
PA7
MSv52556V2
1. The above figure shows the package top view.

2. VSS pads are connected to the exposed pad.
Figure 5. TFBGA100 pinout
1 2 3 4 5 6 7 8 9 10
A PE6 PE5 PE2 PB8 BOOT0 PB5 PD6 PD3 PD2 PC12
PC14- PC15-
B PE3 PE0 PB7 PB3 PD4 PD1 PC11 PC10
OSC32_IN OSC32_OUT
C VSS VBAT PE4 PE1 PB4 PD7 PD0 PA15 PA14 PA13
D VSSSMPS VLXSMPS PDR_ON PB6 VSS VDD PD5 VCAP PA12 PA11
E VDDSMPS VFBSMPS PB9 PC13 VDD VDDLDO VSS VDD33USB PA9 PA10
F PC1 NRST PC0 PC2_C VSS VDD VDDLDO PC6 PC9 PA8
PH1-
G PH0-OSC_IN PA0 PC3_C PA3 VCAP PD14 PD15 PC7 PC8
OSC_OUT
H VDDA VSSA PA2 PC4 PE7 PE10 PD11 PD9 PD12 PD13
J VREF+ PA1 PA6 PC5 PB2 PE8 PB11 PB13 PD8 PD10
K PA4 PA5 PA7 PB0 PB1 PE9 PB10 PB12 PB14 PB15
MSv65396V2
56/282 DS13311 Rev 3

STM32H725xE/G Pinouts, pin descriptions and alternate functions
Figure 6. LQFP100 pinout
VDD33USB
VDDLDO
BOOT0
VCAP
PC10
PC12
PC11
PA14
PA15
VDD
VDD
VSS
PD0
PD1
PD2
PD3
PD4
PD5
PB3
PB4
PB5
PB6
PB7
PB8
PB9
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
PE2 1 75 VDD
PE4 2 74 VDDLDO
PE5 3 73 VSS
VDD 4 72 VCAP
VBAT 5 71 PA13
PC13 6 70 PA12
PC14-OSC32_IN 7 69 PA11
PC15-OSC32_OUT 8 68 PA10
VSSSMPS 9 67 PA9
VLXSMPS 10 66 PA8
VDDSMPS 11 65 PC9
VFBSMPS 12 64 PC8
PH0-OSC_IN 13 LQFP100 63 PC7
PH1-OSC_OUT 14 62 PC6
NRST 15 61 PD15
PC0 16 60 PD14
PC1 17 59 VDD
PC2_C 18 58 VSS
PC3_C 19 57 PD13
VDD 20 56 PD12
VSS 21 55 PD11
VSSA 22 54 PD10
VREF+ 23 53 PD9
VDDA 24 52 PD8
PA0 25 51 PB15
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
PB14
PB13
PB12
VDD
VDDLDO
VSS
VCAP
PB10
PE8
PE7
PB2
PB1
PB0
PC5
PC4
VDD
VSS
PB11
PA7
PA6
PA5
PA4
PA3
PA2
PA1
MSv52555V1.
DS13311 Rev 3 57/282

112
Figure 7. WLCSP115 ballout

1 2 3 4 5 6 7 8 9 10 11
A VDD PD2 VDD VDD VSS
B VSS VDD PD3 VSS VCAP PE2
C VDDLDO VSS VSS BOOT0 VDD

PC14-
D VCAP PA14 PD1 PB5 VDDLDO
OSC32_IN
PC15-
E PA11 PC10 PD5 PB8
OSC32_OUT
F VDD PA12 PC12 PB4 PE4 VSS
G VSS PA13 PD4 PB9 VDD
H PC6 PA8 PA15 PB3 PC13 VSSSMPS
J VDD33USB PA9 PD0 PE0 VLXSMPS
K VDD50USB PC7 PA10 PB6 VBAT VDDSMPS
L PD14 PC8 PC11 PDR_ON VFBSMPS
M VDD PD13 PC9 PB7 PC0 VSS
N PD15 PD9 PE7 PA0 VDD
P VSS PD10 PB13 PA3 PC1 PH0-OSC_IN
R PD11 PB14 PA7 PA1 NRST

PH1-
T PD12 PD8 PB10 PA6 VSSA
OSC_OUT
U VSS PB12 PB0 PA5 VSS
V VDD PB15 PE8 VSS PA2 VDD
W VDDLDO PB11 PB1 PC4 VREF+
Y VDD VCAP VSS VDD PA4 VDDA
AA VSS VDD PB2 PC5 VDD
MSv52557V1
58/282 DS13311 Rev 3

VDDLDO
PDR_ON
BOOT0
VCAP
PG14
PG13
PG12
PG10
PC12
PC10
PG11
PC11
VDD
VDD
VDD
VSS
VSS
PG9
VSS
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121
120
109
119
118
117
116
115
114
113
112
110
111
PE2 1 108 PA15
PE3 2 107 PA14
PE4 3 106 VDD
PE5 4 105 VDDLDO
PE6 5 104 VSS
VSS 6 103 VCAP
VDD 7 102 PA13
VBAT 8 101 PA12
PC13 9 100 PA11
PC14-OSC32_IN 10 99 PA10
PC15-OSC32_OUT 11 98 PA9
VSS 12 97 PA8
VDD 13 96 PC9
VSSSMPS 14 95 PC8
VLXSMPS 15 94 PC7
VDDSMPS 16 93 PC6
VFBSMPS 17 92 VDD
VSS 18 91 VDD33USB
VDD 19 LQFP144 90 VDD50USB
PF6 20 89 VSS
PF7 21 88 PG8
PF8 22 87 PG7
PF9 23 86 PG6
PF10 24 85 PD15
PH0-OSC_IN 25 84 PD14
PH1-OSC_OUT 26 83 PD13
NRST 27 82 PD12
PC0 28 81 PD11
PC1 29 80 VSS
PC2_C 30 79 VDD
PC3_C 31 78 PD10
VDD 32 77 PD9
VSS 33 76 PD8
VSSA 34 75 PB15
VREF+ 35 74 PB14
VDDA 36 73 PB13
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
VSS
VDD
PC4
PC5
PB0
PB1
PB2
PF14
PF15
VSS
VDD
PE7
PE8
PE9
PE10
PE12
PE13
PE14
PE15
PB10
VCAP
VSS
VDDLDO
VDD
PB12
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7
PF11
PE11
PB11
MSv52554V1.
DS13311 Rev 3 59/282

112
VDDLDO
PDR_ON
VDDLDO
BOOT0
VCAP
VCAP
PG12
PG10
PG11
PG15
PG14
PG13
PC12
PC10
PC11
PA15
PA14
VDD
VDD
VDD
VDD
VSS
PG9
VSS
PD7
PD6
PD5
PD4
PD3
PD2
VSS
VSS
VSS
PE1
PE0
PB9
PD1
PD0
PB8
PB7
PB6
PB5
PB4
PB3
176
175
174
173
172
171
170
169
168
167
166
165
164
163
162
161
160
159
158
157
156
155
154
153
152
151
150
149
148
147
146
145
144
143
142
141
140
139
138
137
136
135
134
133
PE2 1 132 PA13
PE3 2 131 PA12
PE4 3 130 PA11
PE5 4 129 PA10
PE6 5 128 PA9
VSS 6 127 PA8
VDD 7 126 VDD
VBAT 8 125 PC9
PC13 9 124 PC8
PC14-OSC32_IN 10 123 PC7
PC15-OSC32_OUT 11 122 PC6
VSS 12 121 VDD33USB
VDD 13 120 VDD50USB
VSSSMPS 14 119 VSS
VLXSMPS 15 118 PG8
VDDSMPS 16 117 PG7
VFBSMPS 17 116 PG6
PF0 18 115 PG5
PF1 19 114 PG4
PF2 20 113 VDD
PF3 21 112 VSS
PF4 22 111 PG3
PF5 23 LQFP176 110 PG2
VSS 24 109 PK2
VDD 25 108 PK1
PF6 26 107 PK0
PF7 27 106 VSS
PF8 28 105 VDD
PF9 29 104 PJ11
PF10 30 103 PJ10
PH0-OSC_IN 31 102 PJ9
PH1-OSC_OUT 32 101 PJ8
NRST 33 100 VSS
PC0 34 99 VDD
PC1 35 98 PD15
PC2_C 36 97 PD14
PC3_C 37 96 PD13
VSSA 38 95 PD12
VREF+ 39 94 PD11
VDDA 40 93 VSS
PA0 41 92 VDD
PA1 42 91 PD10
PA2 43 90 PD9
VDD 44 89 PD8
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
VSS
VSS
VDD
PC4
PC5
PB0
PB1
PB2
PF12
PF13
PF14
PF15
PG0
VSS
VDD
PG1
PE7
PE8
PE9
VSS
VDD
PE10
PE12
PE13
PE14
PE15
PB10
VCAP
VSS
VDDLDO
VSS
VDD
PB12
PB13
PB14
PB15
PA3
PA4
PA5
PA6
PA7
PF11
PE11
PB11
MSv52553V1.
60/282 DS13311 Rev 3

Figure 10. UFBGA169 ballout

1 2 3 4 5 6 7 8 9 10 11 12 13
A PE4 PE2 VDD VCAP PB6 VDD VDD PG10 PD5 VDD PC12 PC10 PH14
PC15-
B PE3 VSS VDDLDO PB8 PB4 VSS PG11 PD6 VSS PC11 PA14 PH13
OSC32_OUT
PC14-
C PE6 PE5 PDR_ON PB9 PB5 PG14 PG9 PD4 PD1 PA15 VSS VDD
OSC32_IN
D VDD VSS PC13 PE1 PE0 PB7 PG13 PD7 PD3 PD0 PA13 VDDLDO VCAP
E VLXSMPS VSSSMPS VBAT PF1 PF3 BOOT0 PG15 PG12 PD2 PA10 PA9 PA8 PA12
F VDDSMPS VFBSMPS PF0 PF2 PF5 PF7 PB3 PG4 PC6 PC7 PC9 PC8 PA11
G VDD VSS PF4 PF6 PF9 NRST PF13 PE7 PG6 PG7 PG8 VDD50USB VDD33USB
PH1-
H PH0-OSC_IN PF10 PF8 PC2 PA4 PF14 PE8 PG2 PG3 PG5 VSS VDD
OSC_OUT
J PC0 PC1 VSSA PC3 PA0 PA7 PF15 PE9 PE14 PD11 PD13 PD15 PD14
K PC3_C PC2_C PA0_C PA1 PA6 PC4 PG0 PE13 PH10 PH12 PD9 PD10 PD12
L VDDA VREF+ PA1_C PA5 PB1 PB2 PG1 PE12 PB10 PH11 PB13 VSS VDD
M VDD VSS PH3 VSS PB0 PF11 VSS PE10 PB11 VDDLDO VSS PD8 PB15
N PA2 PH2 PA3 VDD PC5 PF12 VDD PE11 PE15 VCAP VDD PB12 PB14
MSv52551V1.
Figure 11. UFBGA176+25 ballout

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
A VSS PB8 VDDLDO VCAP PB6 PB3 PG11 PG9 PD3 PD1 PA15 PA14 VDDLDO VCAP VSS
B PE4 PE3 PB9 PE0 PB7 PB4 PG13 PD7 PD5 PD2 PC12 PH14 PA13 PA8 PA12
C PC13 VSS PE2 PE1 BOOT0 PB5 PG14 PG10 PD4 PD0 PC11 PC10 PH13 PA10 PA11
PC15- PC14-
D PE5 PDR_ON VDD VSS PG15 PG12 PD6 VSS VDD PH15 PA9 PC8 PC7
OSC32_OUT OSC32_IN
E VSS VBAT PE6 VDD VDD PC9 PC6 VDD50USB
F VLXSMPS VSSSMPS PF1 PF0 VSS VSS VSS VSS VSS VSS VDD33USB PG6 PG5
G VDDSMPS VFBSMPS PF2 VDD VSS VSS VSS VSS VSS PG8 PG7 PG4 PG2
H PF6 PF4 PF5 PF3 VSS VSS VSS VSS VSS VDD PG3 PD14 PD13
J PH0-OSC_IN PF8 PF7 PF9 VSS VSS VSS VSS VSS PD15 PD11 VSS PD12
PH1-
K VSS PF10 VDD VSS VSS VSS VSS VSS VSS PD9 PB15 PB14
OSC_OUT
L NRST PC0 PC1 VREF- VDD PD10 PD8 PB13
M PC2 PC3 VREF+ VDDA VDD VSS PC5 PB1 VDD VSS PH7 PE14 PH11 PH9 PB12
N PC2_C PC3_C VSSA PH2 PA3 PA7 PF11 PE8 PG1 PF15 PF13 PB10 PH8 PH10 PH12
P PA0 PA1 PA1_C PH4 PA4 PA5 PB2 PG0 PE7 PB11 PF12 PE12 PE13 PE15 PH6
R VSS PA2 PA0_C PH3 PH5 PC4 PA6 PB0 PE10 PF14 PE9 PE11 VCAP VDDLDO VSS
MSv52552V1.
DS13311 Rev 3 61/282

112
Table 7. Legend/abbreviations used in the pinout table

Name Abbreviation Definition
Unless otherwise specified in brackets below the pin name, the pin function during
Pin name
and after reset is the same as the actual pin name
S Supply pin
I Input only pin
Pin type
I/O Input / output pin
ANA Analog-only Input
FT 5 V tolerant I/O
TT 3.3 V tolerant I/O
B Dedicated BOOT0 pin
RST Bidirectional reset pin with embedded weak pull-up resistor
I/O structure Option for TT and FT I/Os
_f I2C FM+ option

_a analog option (supplied by VDDA)
_u USB option (supplied by VDD33USB)
_h High-speed low-voltage I/O
Unless otherwise specified by a note, all I/Os are set as floating inputs during and
Notes
after reset.
Alternate
Functions selected through GPIOx_AFR registers
functions
Pin functions
Additional
Functions directly selected/enabled through peripheral registers
functions
62/282 DS13311 Rev 3

Table 8. STM32H725 pin and ball descriptions

Pin number
Pin name (function after reset)
Additional functions
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TRACECLK,
SAI1_CK1,
USART10_RX,
SPI4_SCK,
SAI1_MCLK_A,
- 1 A3 1 B11 A2 C3 1 PE2 I/O FT_h - SAI4_MCLK_A, -
OCTOSPIM_P1_IO2,
SAI4_CK1,
ETH_MII_TXD3,
FMC_A23,
EVENTOUT
TRACED0,
TIM15_BKIN,
SAI1_SD_B,
- - B3 2 - B2 B2 2 PE3 I/O FT_h - SAI4_SD_B, -
USART10_TX,
FMC_A19,
EVENTOUT
TRACED1, SAI1_D2,
DFSDM1_DATIN3,
TIM15_CH1N,
SPI4_NSS,
- 2 C3 3 F9 A1 B1 3 PE4 I/O FT_h - SAI1_FS_A, -
SAI4_FS_A, SAI4_D2,
FMC_A20,
DCMI_D4/PSSI_D4,
LCD_B0, EVENTOUT
TRACED2, SAI1_CK2,
DFSDM1_CKIN3,
TIM15_CH1,
SPI4_MISO,
- 3 A2 4 - C3 D3 4 PE5 I/O FT_h - SAI1_SCK_A, -
SAI4_SCK_A,
SAI4_CK2, FMC_A21,
DCMI_D6/PSSI_D6,
LCD_G0, EVENTOUT
DS13311 Rev 3 63/282

112
Table 8. STM32H725 pin and ball descriptions (continued)

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TRACED3,
TIM1_BKIN2,
SAI1_D1, TIM15_CH2,
SPI4_MOSI,
SAI1_SD_A,
- - A1 5 - C2 E3 5 PE6 I/O FT_h - SAI4_SD_A, SAI4_D1, -
SAI4_MCLK_B,
TIM1_BKIN2_COMP1
2, FMC_A22,
DCMI_D7/PSSI_D7,
LCD_G1, EVENTOUT
- - - 6 - - - 6 VSS S - - - -
- 4 - 7 - - - 7 VDD S - - - -
1 5 C2 8 K9 E3 E2 8 VBAT S - - - -
RTC_TAMP1/
- 6 E4 9 H9 D3 C1 9 PC13 I/O FT - EVENTOUT RTC_TS,
WKUP4
- - - - F11 - - - VSS S - - - -
PC14-
2 7 B1 10 D11 C1 D2 10 I/O FT - EVENTOUT OSC32_IN
OSC32_IN
PC15-
3 8 B2 11 E10 B1 D1 11 OSC32_ I/O FT - EVENTOUT OSC32_OUT
OUT
- - - 12 F11 - - 12 VSS S - - - -
- - - 13 G10 - - 13 VDD S - - - -
4 9 D1 14 H11 E2 F2 14 VSSSMPS S - - - -
5 10 D2 15 J10 E1 F1 15 VLXSMPS S - - - -
6 11 E1 16 K11 F1 G1 16 VDDSMPS S - - - -
7 12 E2 17 L10 F2 G2 17 VFBSMPS S - - - -
I2C2_SDA(boot),
I2C5_SDA,
- - - - - F3 F4 18 PF0 I/O FT_fh - OCTOSPIM_P2_IO0, -
FMC_A0, TIM23_CH1,
EVENTOUT
64/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
I2C2_SCL(boot),
I2C5_SCL,
- - - - - E4 F3 19 PF1 I/O FT_fh - OCTOSPIM_P2_IO1, -
FMC_A1, TIM23_CH2,
EVENTOUT
I2C2_SMBA,
I2C5_SMBA,
- - - - - F4 G3 20 PF2 I/O FT_h - OCTOSPIM_P2_IO2, -
FMC_A2, TIM23_CH3,
EVENTOUT
OCTOSPIM_P2_IO3,
- - - - - E5 H4 21 PF3 I/O FT_ha - FMC_A3, TIM23_CH4, ADC3_INP5
EVENTOUT
OCTOSPIM_P2_CLK, ADC3_INN5,
- - - - - G3 H2 22 PF4 I/O FT_ha -
FMC_A4, EVENTOUT ADC3_INP9
OCTOSPIM_P2_NCL
- - - - - F5 H3 23 PF5 I/O FT_ha - K, FMC_A5, ADC3_INP4
EVENTOUT
8 - - 18 M11 - - 24 VSS S - - - -
9 - - 19 N10 - - 25 VDD S - - - -
TIM16_CH1,
FDCAN3_RX,
SPI5_NSS,
SAI1_SD_B,
ADC3_INN4,
- - - 20 - G4 H1 26 PF6 I/O FT_ha - UART7_RX,
ADC3_INP8
SAI4_SD_B,
OCTOSPIM_P1_IO3,
TIM23_CH1,
EVENTOUT
TIM17_CH1,
FDCAN3_TX,
SPI5_SCK,
SAI1_MCLK_B,
- - - 21 - F6 J3 27 PF7 I/O FT_ha - UART7_TX, ADC3_INP3
SAI4_MCLK_B,
OCTOSPIM_P1_IO2,
TIM23_CH2,
EVENTOUT
DS13311 Rev 3 65/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM16_CH1N,
SPI5_MISO,
SAI1_SCK_B,
UART7_RTS/UART7_
ADC3_INN3,
- - - 22 - H4 J2 28 PF8 I/O FT_ha - DE, SAI4_SCK_B,
ADC3_INP7
TIM13_CH1,
OCTOSPIM_P1_IO0,
TIM23_CH3,
EVENTOUT
TIM17_CH1N,
SPI5_MOSI,
SAI1_FS_B,
UART7_CTS,
- - - 23 - G5 J4 29 PF9 I/O FT_ha - SAI4_FS_B, ADC3_INP2
TIM14_CH1,
OCTOSPIM_P1_IO1,
TIM23_CH4,
EVENTOUT
TIM16_BKIN,
SAI1_D3, PSSI_D15,
OCTOSPIM_P1_CLK, ADC3_INN2,
- - - 24 - H3 K3 30 PF10 I/O FT_ha -
SAI4_D3, ADC3_INP6
DCMI_D11/PSSI_D11,
LCD_DE, EVENTOUT
PH0-
10 13 G1 25 P11 H1 J1 31 I/O FT - EVENTOUT OSC_IN
OSC_IN
PH1-
11 14 G2 26 T11 H2 K1 32 I/O FT - EVENTOUT OSC_OUT
OSC_OUT
12 15 F2 27 R10 G6 L1 33 NRST I/O RST - - -
FMC_D12/FMC_AD12
, DFSDM1_CKIN0,
DFSDM1_DATIN4,
SAI4_FS_B,
13 16 F3 28 M9 J1 L2 34 PC0 I/O FT_ha - FMC_A25, ADC123_INP10
OTG_HS_ULPI_STP,
LCD_G2,
FMC_SDNWE,
LCD_R5, EVENTOUT
66/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TRACED0, SAI4_D1,
SAI1_D1,
DFSDM1_DATIN0,
DFSDM1_CKIN4,
ADC123_INN10
SPI2_MOSI/I2S2_SD
,
O, SAI1_SD_A,
14 17 F1 29 P9 J2 L3 35 PC1 I/O FT_ha - ADC123_INP11
SAI4_SD_A,
, RTC_TAMP3,
SDMMC2_CK,
WKUP6
OCTOSPIM_P1_IO4,
ETH_MDC,
MDIOS_MDC,
LCD_G5, EVENTOUT
PWR_DEEPSLEEP,
DFSDM1_CKIN1,
OCTOSPIM_P1_IO5,
SPI2_MISO/I2S2_SDI,
ADC123_INN11
H5 M1 DFSDM1_CKOUT,
- - - - - (1) (1) - PC2 I/O FT_a - ,
OCTOSPIM_P1_IO2,
ADC123_INP12
OTG_HS_ULPI_DIR,
ETH_MII_TXD2,
FMC_SDNE0,
EVENTOUT
18 F4 30 K2 N1 36 ADC3_INN1,
- (2) (2) (2) - (1) (1) (2) PC2_C ANA TT_a - -
ADC3_INP0
PWR_SLEEP,
DFSDM1_DATIN1,
OCTOSPIM_P1_IO6,
SPI2_MOSI/
J4 M2 I2S2_SDO, ADC12_INN12,
- - - - - (1) (1) - PC3 I/O FT_a -
OCTOSPIM_P1_IO0, ADC12_INP13
OTG_HS_ULPI_NXT,
ETH_MII_TX_CLK,
FMC_SDCKE0,
EVENTOUT
19 G4 31 K1 N2 37
- (2) (2) (2) - (1) (1) (2) PC3_C ANA TT_a - - ADC3_INP1
- 20 - 32 V11 - - - VDD S - - - -
- 21 - 33 U10 - - - VSS S - - - -
15 22 H2 34 T9 J3 N3 38 VSSA S - - - -
DS13311 Rev 3 67/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
- - - - - - L4 - VREF- S - - - -
- 23 J1 35 W10 L2 M3 39 VREF+ S - - - -
16 24 H1 36 Y11 L1 M4 40 VDDA S - - - -
TIM2_CH1/TIM2_ETR,
TIM5_CH1,
TIM8_ETR,
TIM15_BKIN,
SPI6_NSS/I2S6_WS,
J5 P1 USART2_CTS/USART ADC1_INP16,
17 25 G3 37 N8 (1) (1) 41 PA0 I/O FT_ha -
2_NSS, UART4_TX, WKUP1
SDMMC2_CMD,
SAI4_SD_B,
ETH_MII_CRS,
FMC_A19,
EVENTOUT
K3 R3 ADC12_INN1,
- - - - - (1) (1) - PA0_C ANA TT_a - -
ADC12_INP0
TIM2_CH2,
TIM5_CH2,
LPTIM3_OUT,
TIM15_CH1N,
USART2_RTS/USART
K4 P2 2_DE, UART4_RX, ADC1_INN16,
18 26 J2 38 R8 (1) (1) 42 PA1 I/O FT_ha -
OCTOSPIM_P1_IO3, ADC1_INP17
SAI4_MCLK_B,
ETH_MII_RX_CLK/ET
H_RMII_REF_CLK,
OCTOSPIM_P1_DQS,
LCD_R2, EVENTOUT
L3 P3
- - - - - (1) (1) - PA1_C ANA TT_a - - ADC12_INP1
68/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM2_CH3,
TIM5_CH3,
LPTIM4_OUT,
TIM15_CH1,
OCTOSPIM_P1_IO0, ADC12_INP14,
19 27 H3 39 V9 N1 R2 43 PA2 I/O FT_ha -
USART2_TX(boot), WKUP2
SAI4_SCK_B,
ETH_MDIO,
MDIOS_MDIO,
LCD_R1, EVENTOUT
LPTIM1_IN2,
OCTOSPIM_P1_IO4,
SAI4_SCK_B,
- - - - - N2 N4 - PH2 I/O FT_ha - ADC3_INP13
ETH_MII_CRS,
FMC_SDCKE0,
LCD_R0, EVENTOUT
- - - - AA10 - - 44 VDD S - - - -
- - - - - - - 45 VSS S - - - -
OCTOSPIM_P1_IO5,
SAI4_MCLK_B,
ADC3_INN13,
- - - - - M3 R4 - PH3 I/O FT_ha - ETH_MII_COL,
ADC3_INP14
FMC_SDNE0,
LCD_R1, EVENTOUT
I2C2_SCL, LCD_G5,
OTG_HS_ULPI_NXT, ADC3_INN14,
- - - - - - P4 - PH4 I/O FT_fa -
PSSI_D14, LCD_G4, ADC3_INP15
EVENTOUT
I2C2_SDA,
FT_fh SPI5_NSS, ADC3_INN15,
- - - - - - R5 - PH5 I/O -
a FMC_SDNWE, ADC3_INP16
EVENTOUT
DS13311 Rev 3 69/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM2_CH4,
TIM5_CH4,
LPTIM5_OUT,
TIM15_CH2,
I2S6_MCK,
OCTOSPIM_P1_IO2,
20 28 G5 40 P7 N3 N5 46 PA3 I/O FT_ha - ADC12_INP15
USART2_RX(boot),
LCD_B2,
OTG_HS_ULPI_D0,
ETH_MII_COL,
OCTOSPIM_P1_CLK,
LCD_B5, EVENTOUT
21 29 - 41 - - - 47 VSS S - - - -
22 30 - 42 - - - 48 VDD S - - - -
D1PWREN,
TIM5_ETR,
SPI1_NSS(boot)/I2S1
_WS,
SPI3_NSS/I2S3_WS,
ADC12_INP18,
23 31 K1 43 Y9 H6 P5 49 PA4 I/O TT_ha - USART2_CK,
DAC1_OUT1
SPI6_NSS/I2S6_WS,
FMC_D8/FMC_AD8,
DCMI_HSYNC/PSSI_
DE, LCD_VSYNC,
EVENTOUT
D2PWREN,
TIM2_CH1/TIM2_ETR,
TIM8_CH1N,
SPI1_SCK(boot)/I2S1
ADC12_INN18,
_CK,
24 32 K2 44 U8 L4 P6 50 PA5 I/O TT_ha - ADC12_INP19,
SPI6_SCK/I2S6_CK,
DAC1_OUT2
OTG_HS_ULPI_CK,
FMC_D9/FMC_AD9,
PSSI_D14, LCD_R4,
EVENTOUT
70/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM1_BKIN,
TIM3_CH1,
TIM8_BKIN,
SPI1_MISO(boot)/I2S1
_SDI,
OCTOSPIM_P1_IO3,
SPI6_MISO/I2S6_SDI,
25 33 J3 45 T7 K5 R7 51 PA6 I/O FT_ha - ADC12_INP3
TIM13_CH1,
TIM8_BKIN_COMP12,
MDIOS_MDC,
TIM1_BKIN_COMP12,
DCMI_PIXCLK/PSSI_
PDCK, LCD_G2,
EVENTOUT
TIM1_CH1N,
TIM3_CH2,
TIM8_CH1N,
SPI1_MOSI(boot)/I2S1
_SDO,
SPI6_MOSI/I2S6_SD ADC12_INN3,
26 34 K3 46 R6 J6 N6 52 PA7 I/O TT_ha - O, TIM14_CH1, ADC12_INP7,
OCTOSPIM_P1_IO2, OPAMP1_VINM
ETH_MII_RX_DV/ETH
_RMII_CRS_DV,
FMC_SDNWE,
LCD_VSYNC,
EVENTOUT
PWR_DEEPSLEEP,
FMC_A22,
DFSDM1_CKIN2,
I2S1_MCK, ADC12_INP4,
SPDIFRX1_IN3, OPAMP1_
27 35 H4 47 W8 K6 R6 53 PC4 I/O TT_ha -
SDMMC2_CKIN, VOUT,
ETH_MII_RXD0/ETH_ COMP1_INM
RMII_RXD0,
FMC_SDNE0,
LCD_R7, EVENTOUT
DS13311 Rev 3 71/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
PWR_SLEEP,
SAI4_D3, SAI1_D3,
DFSDM1_DATIN2,
PSSI_D15,
SPDIFRX1_IN4, ADC12_INN4,
28 36 J4 48 AA8 N5 M7 54 PC5 I/O TT_ha - OCTOSPIM_P1_DQS, ADC12_INP8,
ETH_MII_RXD1/ETH_ OPAMP1_VINM
RMII_RXD1,
FMC_SDCKE0,
COMP1_OUT,
LCD_DE, EVENTOUT
- - - - V7 - - - VSS S - - - -
- - - - Y7 - - - VDD S - - - -
TIM1_CH2N,
TIM3_CH3,
TIM8_CH2N,
OCTOSPIM_P1_IO1, ADC12_INN5,
DFSDM1_CKOUT, ADC12_INP9,
29 37 K4 49 U6 M5 R8 55 PB0 I/O TT_ha -
UART4_CTS, OPAMP1_VINP,
LCD_R3, COMP1_INP
OTG_HS_ULPI_D1,
ETH_MII_RXD2,
LCD_G1, EVENTOUT
TIM1_CH3N,
TIM3_CH4,
TIM8_CH3N,
OCTOSPIM_P1_IO0,
ADC12_INP5,
30 38 K5 50 W6 L5 M8 56 PB1 I/O FT_ha - DFSDM1_DATIN1,
COMP1_INM
LCD_R6,
OTG_HS_ULPI_D2,
ETH_MII_RXD3,
LCD_G0, EVENTOUT
72/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
RTC_OUT, SAI4_D1,
SAI1_D1,
DFSDM1_CKIN1,
SAI1_SD_A,
SPI3_MOSI/I2S3_SD
31 39 J5 51 AA6 L6 P7 57 PB2 I/O FT_ha - O, SAI4_SD_A, COMP1_INP
OCTOSPIM_P1_CLK,
OCTOSPIM_P1_DQS,
ETH_TX_ER,
TIM23_ETR,
EVENTOUT
SPI5_MOSI,
OCTOSPIM_P1_NCL
K, SAI4_SD_B,
- - - 52 - M6 N7 58 PF11 I/O FT_ha - FMC_NRAS, ADC1_INP2
DCMI_D12/PSSI_D12,
TIM24_CH1,
EVENTOUT
OCTOSPIM_P2_DQS,
ADC1_INN2,
- - - - - N6 P11 59 PF12 I/O FT_ha - FMC_A6, TIM24_CH2,
ADC1_INP6
EVENTOUT
DFSDM1_DATIN6,
I2C4_SMBA, FMC_A7,
- - - - - G7 N11 60 PF13 I/O FT_ha - ADC2_INP2
TIM24_CH3,
EVENTOUT
DFSDM1_CKIN6,
FT_fh I2C4_SCL, FMC_A8, ADC2_INN2,
- - - 53 - H7 R10 61 PF14 I/O -
a TIM24_CH4, ADC2_INP6
EVENTOUT
I2C4_SDA, FMC_A9,
- - - 54 - J7 N10 62 PF15 I/O FT_fh - -
EVENTOUT
OCTOSPIM_P2_IO4,
UART9_RX,
- - - - - K7 P8 63 PG0 I/O FT_h - -
FMC_A10,
EVENTOUT
- - - 55 - - - 64 VSS S - - - -
- - - 56 - - - 65 VDD S - - - -
DS13311 Rev 3 73/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
OCTOSPIM_P2_IO5,
UART9_TX,
- - - - - L7 N9 66 PG1 I/O TT_h - OPAMP2_VINM
FMC_A11,
EVENTOUT
TIM1_ETR,
DFSDM1_DATIN2,
OPAMP2_
UART7_RX,
- 40 H5 57 N6 G8 P9 67 PE7 I/O TT_ha - VOUT,
OCTOSPIM_P1_IO4,
COMP2_INM
FMC_D4/FMC_AD4,
EVENTOUT
TIM1_CH1N,
DFSDM1_CKIN2,
UART7_TX,
- 41 J6 58 V5 H8 N8 68 PE8 I/O TT_ha - OCTOSPIM_P1_IO5, OPAMP2_VINM
FMC_D5/FMC_AD5,
COMP2_OUT,
EVENTOUT
TIM1_CH1,
DFSDM1_CKOUT,
UART7_RTS/UART7_
OPAMP2_VINP,
- - K6 59 - J8 R11 69 PE9 I/O TT_ha - DE,
COMP2_INP
OCTOSPIM_P1_IO6,
FMC_D6/FMC_AD6,
EVENTOUT
- - - - Y5 - - 70 VSS S - - - -
- - - - AA4 - - 71 VDD S - - - -
TIM1_CH2N,
DFSDM1_DATIN4,
UART7_CTS,
- - H6 60 - M8 R9 72 PE10 I/O FT_ha - COMP2_INM
OCTOSPIM_P1_IO7,
FMC_D7/FMC_AD7,
EVENTOUT
TIM1_CH2,
DFSDM1_CKIN4,
SPI4_NSS(boot),
- - - 61 - N8 R12 73 PE11 I/O FT_ha - SAI4_SD_B, COMP2_INP
OCTOSPIM_P1_NCS,
FMC_D8/FMC_AD8,
LCD_G3, EVENTOUT
74/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM1_CH3N,
DFSDM1_DATIN5,
SPI4_SCK(boot),
- - - 62 - L8 P12 74 PE12 I/O FT_h - SAI4_SCK_B, -
FMC_D9/FMC_AD9,
COMP1_OUT,
LCD_B4, EVENTOUT
TIM1_CH3,
DFSDM1_CKIN5,
SPI4_MISO(boot),
- - - 63 - K8 P13 75 PE13 I/O FT_h - SAI4_FS_B, -
FMC_D10/FMC_AD10
, COMP2_OUT,
LCD_DE, EVENTOUT
TIM1_CH4,
SPI4_MOSI(boot),
SAI4_MCLK_B,
- - - 64 - J9 M12 76 PE14 I/O FT_h - -
FMC_D11/FMC_AD11,
LCD_CLK,
EVENTOUT
TIM1_BKIN,
USART10_CK,
FMC_D12/FMC_AD12
- - - 65 - N9 P14 77 PE15 I/O FT_h - -
,
TIM1_BKIN_COMP12,
LCD_R7, EVENTOUT
TIM2_CH3,
LPTIM2_IN1,
I2C2_SCL,
SPI2_SCK/I2S2_CK,
DFSDM1_DATIN7,
32 42 K7 66 T5 L9 N12 78 PB10 I/O FT_fh - -
USART3_TX(boot),
OCTOSPIM_P1_NCS,
OTG_HS_ULPI_D3,
ETH_MII_RX_ER,
LCD_G4, EVENTOUT
DS13311 Rev 3 75/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM2_CH4,
LPTIM2_ETR,
I2C2_SDA,
DFSDM1_CKIN7,
- 43 J7 67 W4 M9 P10 79 PB11 I/O FT_f - USART3_RX(boot), -
OTG_HS_ULPI_D4,
ETH_MII_TX_EN/ETH
_RMII_TX_EN,
LCD_G5, EVENTOUT
33 44 G6 68 Y3 N10 R13 80 VCAP S - - - -
34 45 - 69 AA2 - - 81 VSS S - - - -
- 46 F7 70 W2 M10 R14 82 VDDLDO S - - - -
35 47 - 71 Y1 - - - VDD S - - - -
TIM12_CH1,
I2C2_SMBA,
SPI5_SCK,
- - - - - - P15 - PH6 I/O FT_h - ETH_MII_RXD2, -
FMC_SDNE1,
DCMI_D8/PSSI_D8,
EVENTOUT
I2C3_SCL,
SPI5_MISO,
ETH_MII_RXD3,
- - - - - - M11 - PH7 I/O FT_fh - -
FMC_SDCKE1,
DCMI_D9/PSSI_D9,
EVENTOUT
TIM5_ETR,
I2C3_SDA, FMC_D16,
- - - - - - N13 - PH8 I/O FT_fh - DCMI_HSYNC/PSSI_ -
DE, LCD_R2,
EVENTOUT
TIM12_CH2,
I2C3_SMBA,
- - - - - - M14 - PH9 I/O FT_h - FMC_D17, -
DCMI_D0/PSSI_D0,
LCD_R3, EVENTOUT
76/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM5_CH1,
I2C4_SMBA,
- - - - - K9 N14 - PH10 I/O FT_h - FMC_D18, -
DCMI_D1/PSSI_D1,
LCD_R4, EVENTOUT
TIM5_CH2, I2C4_SCL,
FMC_D19,
- - - - - L10 M13 - PH11 I/O FT_fh - -
DCMI_D2/PSSI_D2,
LCD_R5, EVENTOUT
- - - - - - - 83 VSS S - - - -
- - - - Y1 - - 84 VDD S - - - -
TIM5_CH3,
I2C4_SDA, FMC_D20,
- - - - - K10 N15 - PH12 I/O FT_fh - -
DCMI_D3/PSSI_D3,
LCD_R6, EVENTOUT
TIM1_BKIN,
OCTOSPIM_P1_NCL
K, I2C2_SMBA,
SPI2_NSS/I2S2_WS,
DFSDM1_DATIN1,
USART3_CK,
FDCAN2_RX,
36 48 K8 72 U4 N12 M15 85 PB12 I/O FT_h - -
OTG_HS_ULPI_D5,
ETH_MII_TXD0/ETH_
RMII_TXD0,
OCTOSPIM_P1_IO0,
TIM1_BKIN_COMP12,
UART5_RX,
EVENTOUT
DS13311 Rev 3 77/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM1_CH1N,
LPTIM2_OUT,
OCTOSPIM_P1_IO2,
SPI2_SCK/I2S2_CK,
DFSDM1_CKIN1,
USART3_CTS/USART
3_NSS, FDCAN2_TX,
37 49 J8 73 P5 L11 L15 86 PB13 I/O FT_h - -
OTG_HS_ULPI_D6,
ETH_MII_TXD1/ETH_
RMII_TXD1,
SDMMC1_D0,
DCMI_D2/PSSI_D2,
UART5_TX,
EVENTOUT
TIM1_CH2N,
TIM12_CH1,
TIM8_CH2N,
USART1_TX,
SPI2_MISO/I2S2_SDI,
DFSDM1_DATIN2,
38 50 K9 74 R4 N13 K15 87 PB14 I/O FT_h - USART3_RTS/USART -
3_DE,
UART4_RTS/UART4_
DE, SDMMC2_D0,
FMC_D10/FMC_AD10
, LCD_CLK,
EVENTOUT
RTC_REFIN,
TIM1_CH3N,
TIM12_CH2,
TIM8_CH3N,
USART1_RX,
39 51 K10 75 V3 M13 K14 88 PB15 I/O FT_h - SPI2_MOSI/I2S2_SD -
O, DFSDM1_CKIN2,
UART4_CTS,
SDMMC2_D1,
FMC_D11/FMC_AD11,
LCD_G7, EVENTOUT
78/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
DFSDM1_CKIN3,
USART3_TX(boot),
- 52 J9 76 T3 M12 L14 89 PD8 I/O FT_h - SPDIFRX1_IN2, -
FMC_D13/FMC_AD13
, EVENTOUT
DFSDM1_DATIN3,
USART3_RX(boot),
- 53 H8 77 N4 K11 K13 90 PD9 I/O FT_h - -
FMC_D14/FMC_AD14
, EVENTOUT
DFSDM1_CKOUT,
USART3_CK,
- 54 J10 78 P3 K12 L13 91 PD10 I/O FT_h - -
FMC_D15/FMC_AD15
, LCD_B3, EVENTOUT
- - - 79 V1 - - 92 VDD S - - - -
- - - 80 U2 - - 93 VSS S - - - -
LPTIM2_IN2,
I2C4_SMBA,
USART3_CTS/USART
3_NSS,
- 55 H7 81 R2 J10 J13 94 PD11 I/O FT_h - -
OCTOSPIM_P1_IO0,
SAI4_SD_A,
FMC_A16/FMC_CLE,
EVENTOUT
LPTIM1_IN1,
TIM4_CH1,
LPTIM2_IN1,
I2C4_SCL,
FDCAN3_RX,
USART3_RTS/USART
- 56 H9 82 T1 K13 J15 95 PD12 I/O FT_fh - -
3_DE,
OCTOSPIM_P1_IO1,
SAI4_FS_A,
FMC_A17/FMC_ALE,
DCMI_D12/PSSI_D12,
EVENTOUT
DS13311 Rev 3 79/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
LPTIM1_OUT,
TIM4_CH2,
I2C4_SDA,
FDCAN3_TX,
OCTOSPIM_P1_IO3,
- 57 H10 83 M3 J11 H15 96 PD13 I/O FT_fh - -
SAI4_SCK_A,
UART9_RTS/UART9_
DE, FMC_A18,
DCMI_D13/PSSI_D13,
EVENTOUT
- 58 - - - - - - VSS S - - - -
- 59 - - - - - - VDD S - - - -
TIM4_CH3,
UART8_CTS,
- 60 G7 84 L2 J13 H14 97 PD14 I/O FT_h - UART9_RX, -
FMC_D0/FMC_AD0,
EVENTOUT
TIM4_CH4,
UART8_RTS/UART8_
- 61 G8 85 N2 J12 J12 98 PD15 I/O FT_h - DE, UART9_TX, -
FMC_D1/FMC_AD1,
EVENTOUT
- - - - - - - 99 VDD S - - - -
- - - - P1 - - 100 VSS S - - - -
TIM1_CH3N,
TIM8_CH1,
- - - - - - - 101 PJ8 I/O FT - -
UART8_TX, LCD_G1,
EVENTOUT
TIM1_CH3,
TIM8_CH1N,
- - - - - - - 102 PJ9 I/O FT - -
UART8_RX, LCD_G2,
EVENTOUT
TIM1_CH2N,
TIM8_CH2,
- - - - - - - 103 PJ10 I/O FT - -
SPI5_MOSI, LCD_G3,
EVENTOUT
80/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM1_CH2,
TIM8_CH2N,
- - - - - - - 104 PJ11 I/O FT - -
SPI5_MISO, LCD_G4,
EVENTOUT
- - - - M1 - - 105 VDD S - - - -
- - - - - - - 106 VSS S - - - -
TIM1_CH1N,
TIM8_CH3,
- - - - - - - 107 PK0 I/O FT - -
SPI5_SCK, LCD_G5,
EVENTOUT
TIM1_CH1,
TIM8_CH3N,
- - - - - - - 108 PK1 I/O FT - -
SPI5_NSS, LCD_G6,
EVENTOUT
TIM1_BKIN,
TIM8_BKIN,
- - - - - - - 109 PK2 I/O FT - TIM8_BKIN_COMP12, -
TIM1_BKIN_COMP12,
LCD_G7, EVENTOUT
TIM8_BKIN,
TIM8_BKIN_COMP12,
- - - - - H9 G15 110 PG2 I/O FT_h - FMC_A12, -
TIM24_ETR,
EVENTOUT
TIM8_BKIN2,
TIM8_BKIN2_COMP1
- - - - - H10 H13 111 PG3 I/O FT_h - 2, FMC_A13, -
TIM23_ETR,
EVENTOUT
- - - - - - - 112 VSS S - - - -
- - - - M1 - - 113 VDD S - - - -
TIM1_BKIN2,
TIM1_BKIN2_COMP1
- - - - - F8 G14 114 PG4 I/O FT_h - 2, -
FMC_A14/FMC_BA0,
EVENTOUT
DS13311 Rev 3 81/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM1_ETR,
- - - - - H11 F15 115 PG5 I/O FT_h - FMC_A15/FMC_BA1, -
EVENTOUT
TIM17_BKIN,
OCTOSPIM_P1_NCS,
- - - 86 - G9 F14 116 PG6 I/O FT_h - FMC_NE3, -
DCMI_D12/PSSI_D12,
LCD_R7, EVENTOUT
SAI1_MCLK_A,
USART6_CK,
OCTOSPIM_P2_DQS,
- - - 87 - G10 G13 117 PG7 I/O FT_h - FMC_INT, -
DCMI_D13/PSSI_D13,
LCD_CLK,
EVENTOUT
TIM8_ETR,
SPI6_NSS/I2S6_WS,
USART6_RTS/USART
6_DE,
- - - 88 - G11 G12 118 PG8 I/O FT_h - -
SPDIFRX1_IN3,
ETH_PPS_OUT,
FMC_SDCLK,
LCD_G7, EVENTOUT
- - - 89 P1 - - 119 VSS S - - - -
VDD50
- - - 90 K1 G12 E15 120 S - - - -
USB
VDD33
- - E8 91 J2 G13 F13 121 S - - - -
USB
- - - 92 - - - - VDD S - - - -
82/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM3_CH1,
TIM8_CH1,
DFSDM1_CKIN3,
I2S2_MCK,
USART6_TX,
SDMMC1_D0DIR,
40 62 F8 93 H1 F9 E14 122 PC6 I/O FT_h - SWPMI_IO
FMC_NWAIT,
SDMMC2_D6,
SDMMC1_D6,
DCMI_D0/PSSI_D0,
LCD_HSYNC,
EVENTOUT
DBTRGIO, TIM3_CH2,
TIM8_CH2,
DFSDM1_DATIN3,
I2S3_MCK,
USART6_RX,
SDMMC1_D123DIR,
41 63 G9 94 K3 F10 D15 123 PC7 I/O FT_h - -
FMC_NE1,
SDMMC2_D7,
SWPMI_TX,
SDMMC1_D7,
DCMI_D1/PSSI_D1,
LCD_G6, EVENTOUT
TRACED1,
TIM3_CH3,
TIM8_CH3,
USART6_CK,
UART5_RTS/UART5_
DE,
- 64 G10 95 L4 F12 D14 124 PC8 I/O FT_h - -
FMC_NE2/FMC_NCE,
FMC_INT,
SWPMI_RX,
SDMMC1_D0,
DCMI_D2/PSSI_D2,
EVENTOUT
DS13311 Rev 3 83/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
MCO2, TIM3_CH4,
TIM8_CH4,
I2C3_SDA(boot),
I2S_CKIN, I2C5_SDA,
UART5_CTS,
42 65 F9 96 M5 F11 E13 125 PC9 I/O FT_fh - OCTOSPIM_P1_IO0, -
LCD_G3,
SWPMI_SUSPEND,
SDMMC1_D1,
DCMI_D3/PSSI_D3,
LCD_B2, EVENTOUT
- - - - G2 - - - VSS S - - - -
- - - - F1 - - 126 VDD S - - - -
MCO1, TIM1_CH1,
TIM8_BKIN2,
I2C3_SCL(boot),
I2C5_SCL,
USART1_CK,
43 66 F10 97 H3 E12 B14 127 PA8 I/O FT_fh - -
OTG_HS_SOF,
UART7_RX,
TIM8_BKIN2_COMP1
2, LCD_B3, LCD_R6,
EVENTOUT
TIM1_CH2,
LPUART1_TX,
I2C3_SMBA,
SPI2_SCK/I2S2_CK,
OTG_HS_
44 67 E9 98 J4 E11 D13 128 PA9 I/O FT_u - I2C5_SMBA,
VBUS
USART1_TX(boot),
ETH_TX_ER,
DCMI_D0/PSSI_D0,
LCD_R5, EVENTOUT
TIM1_CH3,
LPUART1_RX,
USART1_RX(boot),
OTG_HS_ID,
45 68 E10 99 K5 E10 C14 129 PA10 I/O FT_u - -
MDIOS_MDIO,
LCD_B4,
DCMI_D1/PSSI_D1,
LCD_B1, EVENTOUT
84/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM1_CH4,
LPUART1_CTS,
SPI2_NSS/I2S2_WS,
OTG_HS_DM
46 69 D10 100 E2 F13 C15 130 PA11 I/O FT_u - UART4_RX,
(boot)
USART1_CTS/USART
1_NSS, FDCAN1_RX,
LCD_R4, EVENTOUT
TIM1_ETR,
LPUART1_RTS/LPUA
RT1_DE,
SPI2_SCK/I2S2_CK,
UART4_TX, OTG_HS_DP
47 70 D9 101 F3 E13 B15 131 PA12 I/O FT_u -
USART1_RTS/USART (boot)
1_DE, SAI4_FS_B,
FDCAN1_TX,
TIM1_BKIN2,
LCD_R5, EVENTOUT
PA13
JTMS/SWDIO,
48 71 C10 102 G4 D11 B13 132 (JTMS/ I/O FT - -
EVENTOUT
SWDIO)
49 72 D8 103 D1 D13 A14 133 VCAP S - - - -
50 73 - 104 B1 - - 134 VSS S - - - -
- 74 E6 105 C2 D12 A13 135 VDDLDO S - - - -
51 75 - 106 A2 - - 136 VDD S - - - -
VDD33
- 76 - - - - - - S - - - -
USB
TIM8_CH1N,
UART4_TX,
- - - - - B13 C13 - PH13 I/O FT_h - FDCAN1_TX(boot), -
FMC_D21, LCD_G2,
EVENTOUT
TIM8_CH2N,
UART4_RX,
FDCAN1_RX(boot),
- - - - - A13 B12 - PH14 I/O FT_h - -
FMC_D22,
DCMI_D4/PSSI_D4,
LCD_G3, EVENTOUT
DS13311 Rev 3 85/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM8_CH3N,
FMC_D23,
- - - - - - D12 - PH15 I/O FT_h - -
DCMI_D11/PSSI_D11,
LCD_G4, EVENTOUT
- - - - - - - 137 VSS S - - - -
- - - - A2 - - - VDD S - - - -
PA14
JTCK/SWCLK,
52 77 C9 107 D3 B12 A12 138 (JTCK/SW I/O FT - -
EVENTOUT
CLK)
JTDI,
TIM2_CH1/TIM2_ETR,
CEC,
SPI1_NSS/I2S1_WS,
SPI3_NSS(boot)/I2S3
53 78 C8 108 H5 C11 A11 139 PA15(JTDI) I/O FT - _WS, -
SPI6_NSS/I2S6_WS,
UART4_RTS/UART4_
DE, LCD_R3,
UART7_TX, LCD_B6,
EVENTOUT
DFSDM1_CKIN5,
I2C5_SDA,
SPI3_SCK(boot)/I2S3
_CK, USART3_TX,
UART4_TX,
54 79 B10 109 E4 A12 C12 140 PC10 I/O FT_fh - -
OCTOSPIM_P1_IO1,
LCD_B1, SWPMI_RX,
SDMMC1_D2,
DCMI_D8/PSSI_D8,
LCD_R2, EVENTOUT
DFSDM1_DATIN5,
I2C5_SCL,
SPI3_MISO(boot)/I2S3
_SDI, USART3_RX,
55 80 B9 110 L6 B11 C11 141 PC11 I/O FT_fh - UART4_RX, -
OCTOSPIM_P1_NCS,
SDMMC1_D3,
DCMI_D4/PSSI_D4,
LCD_B4, EVENTOUT
86/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TRACED3,
FMC_D6/FMC_AD6,
TIM15_CH1,
I2C5_SMBA,
SPI6_SCK/I2S6_CK,
56 81 A10 111 F5 A11 B11 142 PC12 I/O FT_h - SPI3_MOSI(boot)/I2S3 -
_SDO, USART3_CK,
UART5_TX,
SDMMC1_CK,
DCMI_D9/PSSI_D9,
LCD_R6, EVENTOUT
- - - - B3 - - - VDD S - - - -
- - - - C4 - - - VSS S - - - -
DFSDM1_CKIN6,
UART4_RX,
FDCAN1_RX(boot),
- 82 C7 112 J6 D10 C10 143 PD0 I/O FT_h - -
UART9_CTS,
FMC_D2/FMC_AD2,
LCD_B1, EVENTOUT
DFSDM1_DATIN6,
UART4_TX,
- 83 B8 113 D5 C10 A10 144 PD1 I/O FT_h - FDCAN1_TX(boot), -
FMC_D3/FMC_AD3,
EVENTOUT
TRACED2,
FMC_D7/FMC_AD7,
TIM3_ETR,
TIM15_BKIN,
57 84 A9 114 A4 E9 B10 145 PD2 I/O FT_h - -
UART5_RX, LCD_B7,
SDMMC1_CMD,
DCMI_D11/PSSI_D11,
LCD_B2, EVENTOUT
DFSDM1_CKOUT,
SPI2_SCK/I2S2_CK,
USART2_CTS/USART
- 85 A8 115 B5 D9 A9 146 PD3 I/O FT_h - -
2_NSS, FMC_CLK,
DCMI_D5/PSSI_D5,
LCD_G7, EVENTOUT
DS13311 Rev 3 87/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
USART2_RTS/USART
2_DE,
- 86 B7 116 G6 C9 C9 147 PD4 I/O FT_h - OCTOSPIM_P1_IO4, -
FMC_NOE,
EVENTOUT
USART2_TX,
OCTOSPIM_P1_IO5,
- 87 D7 117 E6 A9 B9 148 PD5 I/O FT_h - -
FMC_NWE,
EVENTOUT
- - - 118 - - - - VSS S - - - -
- 88 - 119 - - - - VDD S - - - -
SAI4_D1, SAI1_D1,
DFSDM1_CKIN4,
DFSDM1_DATIN1,
SPI3_MOSI/I2S3_SD
O, SAI1_SD_A,
USART2_RX,
- - A7 120 - B9 D9 149 PD6 I/O FT_h - -
SAI4_SD_A,
OCTOSPIM_P1_IO6,
SDMMC2_CK,
FMC_NWAIT,
DCMI_D10/PSSI_D10,
LCD_B2, EVENTOUT
DFSDM1_DATIN4,
SPI1_MOSI/I2S1_SD
O, DFSDM1_CKIN1,
USART2_CK,
- - C6 121 - D8 B8 150 PD7 I/O FT_h - SPDIFRX1_IN1, -
OCTOSPIM_P1_IO7,
SDMMC2_CMD,
FMC_NE1,
EVENTOUT
- - - - C6 - - 151 VSS S - - - -
- - - - A6 - - 152 VDD S - - - -
88/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
FDCAN3_TX,
SPI1_MISO/I2S1_SDI,
USART6_RX,
SPDIFRX1_IN4,
OCTOSPIM_P1_IO6,
- - - 122 - C8 A8 153 PG9 I/O FT_h - -
SAI4_FS_B,
SDMMC2_D0,
FMC_NE2/FMC_NCE,
DCMI_VSYNC/PSSI_
RDY, EVENTOUT
FDCAN3_RX,
OCTOSPIM_P2_IO6,
SPI1_NSS/I2S1_WS,
LCD_G3, SAI4_SD_B,
- - - 123 - A8 C8 154 PG10 I/O FT_h - -
SDMMC2_D1,
FMC_NE3,
DCMI_D2/PSSI_D2,
LCD_B2, EVENTOUT
LPTIM1_IN2,
USART10_RX,
SPI1_SCK/I2S1_CK,
SPDIFRX1_IN1,
OCTOSPIM_P2_IO7,
- - - 124 - B8 A7 155 PG11 I/O FT_h - -
SDMMC2_D2,
ETH_MII_TX_EN/ETH
_RMII_TX_EN,
DCMI_D3/PSSI_D3,
LCD_B3, EVENTOUT
DS13311 Rev 3 89/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
LPTIM1_IN1,
OCTOSPIM_P2_NCS,
USART10_TX,
SPI6_MISO/I2S6_SDI,
USART6_RTS/USART
6_DE,
SPDIFRX1_IN2,
- - - 125 - E8 D8 156 PG12 I/O FT_h - -
LCD_B4,
SDMMC2_D3,
ETH_MII_TXD1/ETH_
RMII_TXD1,
FMC_NE4,
TIM23_CH1, LCD_B1,
EVENTOUT
TRACED0,
LPTIM1_OUT,
USART10_CTS/USAR
T10_NSS,
SPI6_SCK/I2S6_CK,
USART6_CTS/USART
- - - 126 - D7 B7 157 PG13 I/O FT_h - -
6_NSS, SDMMC2_D6,
ETH_MII_TXD0/ETH_
RMII_TXD0,
FMC_A24,
TIM23_CH2, LCD_R0,
EVENTOUT
TRACED1,
LPTIM1_ETR,
USART10_RTS/USAR
T10_DE,
SPI6_MOSI/I2S6_SD
O, USART6_TX,
- - - 127 - C7 C7 158 PG14 I/O FT_h - OCTOSPIM_P1_IO7, -
SDMMC2_D7,
ETH_MII_TXD1/ETH_
RMII_TXD1,
FMC_A25,
TIM23_CH3, LCD_B0,
EVENTOUT
- - - 128 - - - 159 VSS S - - - -
- - - 129 A6 - - 160 VDD S - - - -
90/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
USART6_CTS/USART
6_NSS,
OCTOSPIM_P2_DQS,
- - - - - E7 D7 161 PG15 I/O FT_h - USART10_CK, -
FMC_NCAS,
DCMI_D13/PSSI_D13,
EVENTOUT
JTDO/TRACESWO,
TIM2_CH2,
SPI1_SCK/I2S1_CK,
SPI3_SCK/I2S3_CK,
PB3(JTDO/
SPI6_SCK/I2S6_CK,
58 89 B6 130 H7 F7 A6 162 TRACES I/O FT_h - -
SDMMC2_D2,
WO)
CRS_SYNC,
UART7_RX,
TIM24_ETR,
EVENTOUT
NJTRST, TIM16_BKIN,
TIM3_CH1,
SPI1_MISO/I2S1_SDI,
SPI3_MISO/I2S3_SDI,
PB4
59 90 C5 131 F7 B6 B6 163 I/O FT_h - SPI2_NSS/I2S2_WS, -
(NJTRST)
SPI6_MISO/I2S6_SDI,
SDMMC2_D3,
UART7_TX,
EVENTOUT
TIM17_BKIN,
TIM3_CH2, LCD_B5,
I2C1_SMBA,
SPI1_MOSI/I2S1_SD
O, I2C4_SMBA,
SPI3_MOSI/I2S3_SD
O,
60 91 A6 132 D7 C6 C6 164 PB5 I/O FT_h - SPI6_MOSI/I2S6_SD -
O, FDCAN2_RX,
OTG_HS_ULPI_D7,
ETH_PPS_OUT,
FMC_SDCKE1,
DCMI_D10/PSSI_D10,
UART5_RX,
EVENTOUT
DS13311 Rev 3 91/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM16_CH1N,
TIM4_CH1,
I2C1_SCL(boot), CEC,
I2C4_SCL,
USART1_TX,
LPUART1_TX,
61 92 D4 133 K7 A5 A5 165 PB6 I/O FT_fh - FDCAN2_TX, -
OCTOSPIM_P1_NCS,
DFSDM1_DATIN5,
FMC_SDNE1,
DCMI_D5/PSSI_D5,
UART5_TX,
EVENTOUT
- - - - B7 - - - VSS S - - - -
- - - - A8 - - - VDD S - - - -
TIM17_CH1N,
TIM4_CH2,
I2C1_SDA, I2C4_SDA,
USART1_RX,
62 93 B5 134 M7 D6 B5 166 PB7 I/O FT_fa - LPUART1_RX, PVD_IN
DFSDM1_CKIN5,
FMC_NL,
DCMI_VSYNC/PSSI_
RDY, EVENTOUT
63 94 A5 135 C8 E6 C5 167 BOOT0 I B - - VPP
TIM16_CH1,
TIM4_CH3,
DFSDM1_CKIN7,
I2C1_SCL, I2C4_SCL,
SDMMC1_CKIN,
UART4_RX,
64 95 A4 136 E8 B5 A2 168 PB8 I/O FT_fh - -
FDCAN1_RX,
SDMMC2_D4,
ETH_MII_TXD3,
SDMMC1_D4,
DCMI_D6/PSSI_D6,
LCD_B6, EVENTOUT
92/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
TIM17_CH1,
TIM4_CH4,
DFSDM1_DATIN7,
I2C1_SDA(boot),
SPI2_NSS/I2S2_WS,
I2C4_SDA,
SDMMC1_CDIR,
65 96 E3 137 G8 C5 B3 169 PB9 I/O FT_fh - -
UART4_TX,
FDCAN1_TX,
SDMMC2_D5,
I2C4_SMBA,
SDMMC1_D5,
DCMI_D7/PSSI_D7,
LCD_B7, EVENTOUT
LPTIM1_ETR,
TIM4_ETR,
LPTIM2_ETR,
UART8_RX,
- - B4 138 J8 D5 B4 170 PE0 I/O FT_h - -
SAI4_MCLK_A,
FMC_NBL0,
DCMI_D2/PSSI_D2,
LCD_R0, EVENTOUT
LPTIM1_IN2,
UART8_TX,
- - C4 139 - D4 C4 171 PE1 I/O FT_h - FMC_NBL1, -
DCMI_D3/PSSI_D3,
LCD_R6, EVENTOUT
66 97 D8 140 B9 A4 A4 172 VCAP S - - - -
67 98 - 141 A10 - - 173 VSS S - - - -
- - D3 142 L8 C4 D4 174 PDR_ON S - - - -
- 99 E6 143 D9 B4 A3 175 VDDLDO S - - - -
68 100 - - C10 - - - VDD S - - - -
- - - 144 C10 - - 176 VDD S - - - -
- - C1 - - B3 A1 - VSS S - - - -
- - D5 - - B7 A15 - VSS S - - - -
- - E7 - - B10 C2 - VSS S - - - -
DS13311 Rev 3 93/282

112

Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
- - F5 - - C12 D10 - VSS S - - - -
- - - - - D2 D6 - VSS S - - - -
- - - - - G2 E1 - VSS S - - - -
- - - - - H12 F10 - VSS S - - - -

- - - - - L12 F12 - VSS S - - - -
- - - - - M2 F6 - VSS S - - - -
- - - - - M4 F7 - VSS S - - - -
- - - - - M7 F8 - VSS S - - - -
- - - - - M11 F9 - VSS S - - - -
- - - - - - G10 - VSS S - - - -
- - - - - - G6 - VSS S - - - -
- - - - - - G7 - VSS S - - - -
- - - - - - G8 - VSS S - - - -
- - - - - - G9 - VSS S - - - -
- - - - - - H10 - VSS S - - - -
- - - - - - H6 - VSS S - - - -
- - - - - - H7 - VSS S - - - -
- - - - - - H8 - VSS S - - - -
- - - - - - H9 - VSS S - - - -
- - - - - - J10 - VSS S - - - -
- - - - - - J14 - VSS S - - - -
- - - - - - J6 - VSS S - - - -
- - - - - - J7 - VSS S - - - -
- - - - - - J8 - VSS S - - - -
- - - - - - J9 - VSS S - - - -
- - - - - - K10 - VSS S - - - -
- - - - - - K12 - VSS S - - - -
94/282 DS13311 Rev 3


Pin number
Alternate functions
UFBGA176+25 SMPS
I/O structure
WLCSP115 SMPS
UFBGA169 SMPS
VFQFPN68 SMPS
TFBGA100 SMPS
LQFP100 SMPS
LQFP144 SMPS
LQFP176 SMPS
Pin type
Notes
- - - - - - K2 - VSS S - - - -
- - - - - - K6 - VSS S - - - -
- - - - - - K7 - VSS S - - - -
- - - - - - K8 - VSS S - - - -
- - - - - - K9 - VSS S - - - -
- - - - - - M10 - VSS S - - - -
- - - - - - M6 - VSS S - - - -
- - - - - - R1 - VSS S - - - -
- - - - - - R15 - VSS S - - - -
- - D6 - - A3 D5 - VDD S - - - -
- - E5 - - A6 D11 - VDD S - - - -
- - F6 - - A7 E4 - VDD S - - - -
- - - - - A10 E12 - VDD S - - - -
- - - - - C13 G4 - VDD S - - - -
- - - - - D1 H12 - VDD S - - - -
- - - - - G1 K4 - VDD S - - - -
- - - - - H13 L12 - VDD S - - - -

- - - - - L13 M5 - VDD S - - - -
- - - - - M1 M9 - VDD S - - - -
- - - - - N4 - - VDD S - - - -
- - - - - N7 - - VDD S - - - -
- - - - - N11 - - VDD S - - - -
1. Pxy_C and Pxy pins/balls are two separate pads (analog switch open). The analog switch is configured through a SYSCFG
register. Refer to the product reference manual for a detailed description of the switch configuration bits.
2. There is a direct path between Pxy_C and Pxy pins/balls, through an analog switch. Pxy alternate functions are available
on Pxy_C when the analog switch is closed. The analog switch is configured through a SYSCFG register. Refer to the
product reference manual for a detailed description of the switch configuration bits.
DS13311 Rev 3 95/282

112
96/282
Pinouts, pin descriptions and alternate functions

Table 9. STM32H725 pin alternate functions
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
DFSDM1
CEC/DC FDCAN1 /ETH/I2C
CRS/FM
DFSDM1 MI/PSSI/ /2/FMC/ 4/LCD/M
CEC/FD DFSDM1 SDMMC LPUART C/LCD/O FMC/LC
/LCD/LP DFSDM1 LCD/OC DIOS/O
FMC/LP FDCAN3 CAN3/S /I2C4/5/ 1/SPI2/I2 1/SAI4/S CTOSPI D/MDIO COMP/D
Port TIM2/3/4 /I2C1/2/3 TOSPIM CTOSPI
TIM1/SA /PDM_S PI1/I2S1/ OCTOS S2/SPI3/ DMMC1/ M_P1/O S/OCTO CMI/PSS LCD/TIM
/5/LPUA /4/5/LPTI _P1/2/S M_P1/S
SYS I4/TIM16 AI1/TIM3 SPI2/I2S PIM_P1/ I2S3/SPI SPDIFR TG1_FS/ SPIM_P I/LCD/TI 24/UAR SYS
RT1/OC M2/OCT AI4/SDM DMMC2/
/17/TIM1 /4/5/12/1 2/SPI3/I2 SAI1/SPI 6/UART X1/SPI6/ OTG1_H 1/SDMM M1x/TIM T5
TOSPIM OSPIM_ MC2/SP SWPMI1
x/TIM2x 5 S3/SPI4/ 3/I2S3/U 7/USAR UART4/ S/SAI4/S C1/TIM1 23
_P1/2/TI P1/TIM1 DIFRX1/ /TIM1x/T
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
M8 5/USAR TIM13/1 IM8/UAR
TIM8
T1/10 4 T7/9/US
ART10
USART2
TIM2_C SPI6_NS
TIM5_C TIM8_ET TIM15_B _CTS/U UART4_ SDMMC SAI4_SD ETH_MII FMC_A1 EVENTO
PA0 - H1/TIM2 S/I2S6_ - - -
H1 R KIN SART2_ TX 2_CMD _B _CRS 9 UT
_ETR WS
NSS
DS13311 Rev 3
ETH_MII
USART2
OCTOS _RX_CL OCTOS
TIM2_C TIM5_C LPTIM3_ TIM15_C _RTS/U UART4_ SAI4_M EVENTO
PA1 - - - PIM_P1_ K/ETH_ PIM_P1_ - LCD_R2
H2 H2 OUT H1N SART2_ RX CLK_B UT
IO3 RMII_RE DQS
DE
F_CLK
OCTOS
TIM2_C TIM5_C LPTIM4_ TIM15_C USART2 SAI4_SC ETH_MD MDIOS_ EVENTO
PA2 - - PIM_P1_ - - - LCD_R1
H3 H3 OUT H1 _TX K_B IO MDIO UT
IO0
Port A OCTOS OTG_HS OCTOS

TIM2_C TIM5_C LPTIM5_ TIM15_C I2S6_M USART2 ETH_MII EVENTO
PA3 - PIM_P1_ - LCD_B2 _ULPI_D PIM_P1_ - LCD_B5
H4 H4 OUT H2 CK _RX _COL UT
IO2 0 CLK
SPI1_NS SPI3_NS SPI6_NS FMC_D8 DCMI_H

TIM5_ET USART2 LCD_VS EVENTO
PA4 D1PWREN - - - S/I2S1_ S/I2S3_ S/I2S6_ - - - /FMC_A SYNC/P
R _CK YNC UT
WS WS WS D8 SSI_DE
TIM2_C SPI1_SC SPI6_SC OTG_HS FMC_D9

TIM8_C PSSI_D1 EVENTO
PA5 D2PWREN H1/TIM2 - - K/I2S1_ - - K/I2S6_ - _ULPI_C - /FMC_A LCD_R4
H1N 4 UT
_ETR CK CK K D9
STM32H725xE/G
DCMI_PI
SPI1_MI OCTOS SPI6_MI TIM8_B TIM1_B
TIM1_B TIM3_C TIM8_B TIM13_C MDIOS_ XCLK/P EVENTO
PA6 - - SO/I2S1 PIM_P1_ - SO/I2S6 KIN_CO KIN_CO LCD_G2
KIN H1 KIN H1 MDC SSI_PD UT
_SDI IO3 _SDI MP12 MP12
CK
Table 9. STM32H725 pin alternate functions (continued)
STM32H725xE/G
DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
ETH_MII
SPI1_M SPI6_M OCTOS _RX_DV
TIM1_C TIM3_C TIM8_C TIM14_C FMC_SD LCD_VS EVENTO
PA7 - - OSI/I2S1 - - OSI/I2S6 PIM_P1_ /ETH_R -
H1N H2 H1N H1 NWE YNC UT
_SDO _SDO IO2 MII_CRS
_DV
TIM8_B
TIM1_C TIM8_B I2C3_SC I2C5_SC USART1 OTG_HS UART7_ EVENTO
PA8 MCO1 - - - - KIN2_C LCD_B3 LCD_R6
DS13311 Rev 3
H1 KIN2 L L _CK _SOF RX UT

OMP12
SPI2_SC DCMI_D
TIM1_C LPUART I2C3_S I2C5_S USART1 ETH_TX EVENTO
PA9 - - K/I2S2_ - - - - 0/PSSI_ LCD_R5

H2 1_TX MBA MBA _TX _ER UT
CK D0
DCMI_D
TIM1_C LPUART USART1 OTG_HS MDIOS_ EVENTO
PA10 - - - - - - - LCD_B4 1/PSSI_ LCD_B1
H3 1_RX _RX _ID MDIO UT
D1
Port A USART1
SPI2_NS
TIM1_C LPUART UART4_ _CTS/U FDCAN1 EVENTO
PA11 - - - S/I2S2_ - - - - - LCD_R4
H4 1_CTS RX SART1_ _RX UT
WS
NSS
LPUART USART1
SPI2_SC
TIM1_ET 1_RTS/L UART4_ _RTS/U SAI4_FS FDCAN1 TIM1_B EVENTO
PA12 - - - K/I2S2_ - - - LCD_R5
R PUART1 TX SART1_ _B _TX KIN2 UT
CK
_DE DE
EVENTO
PA13 JTMS/SWDIO - - - - - - - - - - - - - -
UT
EVENTO
PA14 JTCK/SWCLK - - - - - - - - - - - - - -
UT
TIM2_C SPI1_NS SPI3_NS SPI6_NS UART4_

UART7_ EVENTO
PA15 JTDI H1/TIM2 - - CEC S/I2S1_ S/I2S3_ S/I2S6_ RTS/UA LCD_R3 - - - LCD_B6
TX UT
_ETR WS WS WS RT4_DE
97/282
98/282

DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
OCTOS OTG_HS
TIM1_C TIM3_C TIM8_C DFSDM1 UART4_ ETH_MII EVENTO
PB0 - PIM_P1_ - - LCD_R3 _ULPI_D - - LCD_G1
H2N H3 H2N _CKOUT CTS _RXD2 UT
IO1 1
OCTOS OTG_HS
TIM1_C TIM3_C TIM8_C DFSDM1 ETH_MII EVENTO
PB1 - PIM_P1_ - - - LCD_R6 _ULPI_D - - LCD_G0
H3N H4 H3N _DATIN1 _RXD3 UT
IO0 2
DS13311 Rev 3
SPI3_M OCTOS OCTOS

DFSDM1 SAI1_SD SAI4_SD ETH_TX TIM23_E EVENTO
PB2 RTC_OUT SAI4_D1 SAI1_D1 - - OSI/I2S3 PIM_P1_ PIM_P1_ - -
_CKIN1 _A _A _ER TR UT
_SDO CLK DQS
SPI1_SC SPI3_SC SPI6_SC

JTDO/TRACE TIM2_C SDMMC CRS_SY UART7_ TIM24_E EVENTO
PB3 - - - K/I2S1_ K/I2S3_ - K/I2S6_ - -
SWO H2 2_D2 NC RX TR UT
CK CK CK
SPI1_MI SPI3_MI SPI2_NS SPI6_MI

TIM16_B TIM3_C SDMMC UART7_ EVENTO
PB4 NJTRST - - SO/I2S1 SO/I2S3 S/I2S2_ SO/I2S6 - - - -
KIN H1 2_D3 TX UT
_SDI _SDI WS _SDI
Port B
SPI1_M SPI3_M SPI6_M OTG_HS DCMI_D
TIM17_B TIM3_C I2C1_S I2C4_S FDCAN2 ETH_PP FMC_SD UART5_ EVENTO
PB5 - LCD_B5 OSI/I2S1 OSI/I2S3 OSI/I2S6 _ULPI_D 10/PSSI
KIN H2 MBA MBA _RX S_OUT CKE1 RX UT
_SDO _SDO _SDO 7 _D10
OCTOS DCMI_D
TIM16_C TIM4_C I2C1_SC I2C4_SC USART1 LPUART FDCAN2 DFSDM1 FMC_SD UART5_ EVENTO
PB6 - - CEC PIM_P1_ 5/PSSI_
H1N H1 L L _TX 1_TX _TX _DATIN5 NE1 TX UT
NCS D5
DCMI_V
TIM17_C TIM4_C I2C1_SD I2C4_SD USART1 LPUART DFSDM1 SYNC/P EVENTO
PB7 - - - - - FMC_NL -
H1N H2 A A _RX 1_RX _CKIN5 SSI_RD UT
Y
STM32H725xE/G
DCMI_D
TIM16_C TIM4_C DFSDM1 I2C1_SC I2C4_SC SDMMC UART4_ FDCAN1 SDMMC ETH_MII SDMMC EVENTO
PB8 - - 6/PSSI_ LCD_B6
H1 H3 _CKIN7 L L 1_CKIN RX _RX 2_D4 _TXD3 1_D4 UT
D6
SPI2_NS DCMI_D
TIM17_C TIM4_C DFSDM1 I2C1_SD I2C4_SD SDMMC UART4_ FDCAN1 SDMMC I2C4_S SDMMC EVENTO
PB9 - S/I2S2_ 7/PSSI_ LCD_B7
H1 H4 _DATIN7 A A 1_CDIR TX _TX 2_D5 MBA 1_D5 UT
WS D7
STM32H725xE/G
DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
SPI2_SC OCTOS OTG_HS

TIM2_C LPTIM2_ I2C2_SC DFSDM1 USART3 ETH_MII EVENTO
PB10 - - K/I2S2_ - PIM_P1_ _ULPI_D - - LCD_G4
H3 IN1 L _DATIN7 _TX _RX_ER UT
CK NCS 3
ETH_MII
OTG_HS _TX_EN/
TIM2_C LPTIM2_ I2C2_SD DFSDM1 USART3 EVENTO
PB11 - - - - - _ULPI_D ETH_RM - - LCD_G5
H4 ETR A _CKIN7 _RX UT
4 II_TX_E
DS13311 Rev 3
ETH_MII
OCTOS SPI2_NS OTG_HS OCTOS TIM1_B
TIM1_B I2C2_S DFSDM1 USART3 FDCAN2 _TXD0/E UART5_ EVENTO

PB12 - - PIM_P1_ S/I2S2_ - _ULPI_D PIM_P1_ KIN_CO
KIN MBA _DATIN1 _CK _RX TH_RMII RX UT
NCLK WS 5 IO0 MP12
Port B _TXD0
USART3 ETH_MII
OCTOS SPI2_SC OTG_HS DCMI_D
TIM1_C LPTIM2_ DFSDM1 _CTS/U FDCAN2 _TXD1/E SDMMC UART5_ EVENTO
PB13 - - PIM_P1_ K/I2S2_ - _ULPI_D 2/PSSI_
H1N OUT _CKIN1 SART3_ _TX TH_RMII 1_D0 TX UT
IO2 CK 6 D2
NSS _TXD1
USART3
SPI2_MI UART4_ FMC_D1
TIM1_C TIM12_C TIM8_C USART1 DFSDM1 _RTS/U SDMMC LCD_CL EVENTO
PB14 - SO/I2S2 RTS/UA - - 0/FMC_ -
H2N H1 H2N _TX _DATIN2 SART3_ 2_D0 K UT
_SDI RT4_DE AD10
DE
SPI2_M FMC_D1
TIM1_C TIM12_C TIM8_C USART1 DFSDM1 UART4_ SDMMC EVENTO
PB15 RTC_REFIN OSI/I2S2 - - - 1/FMC_ - LCD_G7
H3N H2 H3N _RX _CKIN2 CTS 2_D1 UT
_SDO AD11
99/282
100/282

DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
FMC_D1 OTG_HS
DFSDM1 DFSDM1 SAI4_FS FMC_A2 FMC_SD EVENTO
PC0 - 2/FMC_ - - - - _ULPI_S LCD_G2 - LCD_R5
_CKIN0 _DATIN4 _B 5 NWE UT
AD12 TP
SPI2_M OCTOS
DFSDM1 DFSDM1 SAI1_SD SAI4_SD SDMMC ETH_MD MDIOS_ EVENTO
PC1 TRACED0 SAI4_D1 SAI1_D1 OSI/I2S2 - PIM_P1_ - LCD_G5
_DATIN0 _CKIN4 _A _A 2_CK C MDC UT
_SDO IO4
DS13311 Rev 3
OCTOS SPI2_MI OCTOS OTG_HS

PWR_DEEPS DFSDM1 DFSDM1 ETH_MII FMC_SD EVENTO
PC2 - - PIM_P1_ SO/I2S2 - - PIM_P1_ _ULPI_D - -
LEEP _CKIN1 _CKOUT _TXD2 NE0 UT
IO5 _SDI IO2 IR
OCTOS SPI2_M OCTOS OTG_HS ETH_MII

DFSDM1 FMC_SD EVENTO
PC3 PWR_SLEEP - - PIM_P1_ OSI/I2S2 - - - PIM_P1_ _ULPI_N _TX_CL - -
_DATIN1 CKE0 UT
IO6 _SDO IO0 XT K
ETH_MII
PWR_DEEPS FMC_A2 DFSDM1 I2S1_M SPDIFR SDMMC _RXD0/ FMC_SD EVENTO
PC4 - - - - - - LCD_R7
Port C LEEP 2 _CKIN2 CK X1_IN3 2_CKIN ETH_RM NE0 UT
II_RXD0
ETH_MII
OCTOS
DFSDM1 PSSI_D1 SPDIFR _RXD1/ FMC_SD COMP1_ EVENTO
PC5 PWR_SLEEP SAI4_D3 SAI1_D3 - - - - PIM_P1_ LCD_DE
_DATIN2 5 X1_IN4 ETH_RM CKE0 OUT UT
DQS
II_RXD1
DCMI_D
TIM3_C TIM8_C DFSDM1 I2S2_M USART6 SDMMC FMC_N SDMMC SDMMC LCD_HS EVENTO
PC6 - - - - 0/PSSI_
H1 H1 _CKIN3 CK _TX 1_D0DIR WAIT 2_D6 1_D6 YNC UT
D0
SDMMC DCMI_D
TIM3_C TIM8_C DFSDM1 I2S3_M USART6 FMC_NE SDMMC SWPMI_ SDMMC EVENTO
PC7 DBTRGIO - - 1_D123 1/PSSI_ LCD_G6
STM32H725xE/G
H2 H2 _DATIN3 CK _RX 1 2_D7 TX 1_D7 UT
DIR D1
UART5_ FMC_NE DCMI_D

TIM3_C TIM8_C USART6 FMC_IN SWPMI_ SDMMC EVENTO
PC8 TRACED1 - - - - RTS/UA 2/FMC_ 2/PSSI_ -
H3 H3 _CK T RX 1_D0 UT
RT5_DE NCE D2
STM32H725xE/G
DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
OCTOS SWPMI_ DCMI_D

TIM3_C TIM8_C I2C3_SD I2S_CKI I2C5_SD UART5_ SDMMC EVENTO
PC9 MCO2 - - PIM_P1_ LCD_G3 SUSPEN 3/PSSI_ LCD_B2
H4 H4 A N A CTS 1_D1 UT
IO0 D D3
SPI3_SC OCTOS DCMI_D

DFSDM1 I2C5_SD USART3 UART4_ SWPMI_ SDMMC EVENTO
PC10 - - - - K/I2S3_ PIM_P1_ LCD_B1 8/PSSI_ LCD_R2
_CKIN5 A _TX TX RX 1_D2 UT
CK IO1 D8
DS13311 Rev 3
SPI3_MI OCTOS DCMI_D

DFSDM1 I2C5_SC USART3 UART4_ SDMMC EVENTO
PC11 - - - - SO/I2S3 PIM_P1_ - - 4/PSSI_ LCD_B4
_DATIN5 L _RX RX 1_D3 UT
_SDI NCS D4

Port C
FMC_D6 SPI6_SC SPI3_M DCMI_D
TIM15_C I2C5_S USART3 UART5_ SDMMC EVENTO
PC12 TRACED3 /FMC_A - K/I2S6_ OSI/I2S3 - - - 9/PSSI_ LCD_R6
H1 MBA _CK TX 1_CK UT
D6 CK _SDO D9
EVENTO
PC13 - - - - - - - - - - - - - - -
UT
EVENTO
PC14 - - - - - - - - - - - - - - -
UT
EVENTO
PC15 - - - - - - - - - - - - - - -
UT
101/282
102/282

DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
FMC_D2
DFSDM1 UART4_ FDCAN1 UART9_ EVENTO
PD0 - - - - - - - - /FMC_A - LCD_B1
_CKIN6 RX _RX CTS UT
D2
FMC_D3
DFSDM1 UART4_ FDCAN1 EVENTO
PD1 - - - - - - - - - /FMC_A - -
_DATIN6 TX _TX UT
D3
DS13311 Rev 3
FMC_D7 DCMI_D
TIM3_ET TIM15_B UART5_ SDMMC EVENTO
PD2 TRACED2 /FMC_A - - - - LCD_B7 - - 11/PSSI_ LCD_B2
R KIN RX 1_CMD UT
D7 D11
USART2
SPI2_SC DCMI_D
DFSDM1 _CTS/U FMC_CL EVENTO
PD3 - - - - K/I2S2_ - - - - - 5/PSSI_ LCD_G7
_CKOUT SART2_ K UT
CK D5
NSS
USART2
OCTOS
Port D _RTS/U FMC_N EVENTO
PD4 - - - - - - - - - PIM_P1_ - - -
SART2_ OE UT
IO4
DE
OCTOS
USART2 FMC_N EVENTO
PD5 - - - - - - - - - PIM_P1_ - - -
_TX WE UT
IO5
SPI3_M OCTOS DCMI_D

DFSDM1 DFSDM1 SAI1_SD USART2 SAI4_SD SDMMC FMC_N EVENTO
PD6 - SAI4_D1 SAI1_D1 OSI/I2S3 - PIM_P1_ 10/PSSI LCD_B2
_CKIN4 _DATIN1 _A _RX _A 2_CK WAIT UT
_SDO IO6 _D10
SPI1_M OCTOS
DFSDM1 DFSDM1 USART2 SPDIFR SDMMC FMC_NE EVENTO
PD7 - - - - OSI/I2S1 - PIM_P1_ - -
STM32H725xE/G
_DATIN4 _CKIN1 _CK X1_IN1 2_CMD 1 UT
_SDO IO7
FMC_D1
DFSDM1 USART3 SPDIFR EVENTO
PD8 - - - - - - - - - 3/FMC_ - -
_CKIN3 _TX X1_IN2 UT
AD13
STM32H725xE/G
DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
FMC_D1
DFSDM1 USART3 EVENTO
PD9 - - - - - - - - - - 4/FMC_ - -
_DATIN3 _RX UT
AD14
FMC_D1
DFSDM1 USART3 EVENTO
PD10 - - - - - - - - - - 5/FMC_ - LCD_B3
_CKOUT _CK UT
AD15
DS13311 Rev 3
USART3
OCTOS FMC_A1
LPTIM2_ I2C4_S _CTS/U SAI4_SD EVENTO
PD11 - - - - - - PIM_P1_ - 6/FMC_ - -
IN2 MBA SART3_ _A UT
IO0 CLE
NSS

USART3
OCTOS FMC_A1 DCMI_D
Port D LPTIM1_ TIM4_C LPTIM2_ I2C4_SC FDCAN3 _RTS/U SAI4_FS EVENTO
PD12 - - - PIM_P1_ - 7/FMC_ 12/PSSI -
IN1 H1 IN1 L _RX SART3_ _A UT
IO1 ALE _D12
DE
OCTOS UART9_ DCMI_D

LPTIM1_ TIM4_C I2C4_SD FDCAN3 SAI4_SC FMC_A1 EVENTO
PD13 - - - - - PIM_P1_ RTS/UA 13/PSSI -
OUT H2 A _TX K_A 8 UT
IO3 RT9_DE _D13
FMC_D0
TIM4_C UART8_ UART9_ EVENTO
PD14 - - - - - - - - - /FMC_A - -
H3 CTS RX UT
D0
UART8_ FMC_D1
TIM4_C UART9_ EVENTO
PD15 - - - - - - - RTS/UA - - /FMC_A - -
H4 TX UT
RT8_DE D1
103/282
104/282

DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
DCMI_D
LPTIM1_ TIM4_ET LPTIM2_ UART8_ SAI4_M FMC_NB EVENTO
PE0 - - - - - - - 2/PSSI_ LCD_R0
ETR R ETR RX CLK_A L0 UT
D2
DCMI_D
LPTIM1_ UART8_ FMC_NB EVENTO
PE1 - - - - - - - - - - 3/PSSI_ LCD_R6
IN2 TX L1 UT
D3
DS13311 Rev 3
OCTOS
SAI1_CK USART1 SPI4_SC SAI1_M SAI4_M SAI4_CK ETH_MII FMC_A2 EVENTO
PE2 TRACECLK - - - PIM_P1_ - -
1 0_RX K CLK_A CLK_A 1 _TXD3 3 UT
IO2
TIM15_B SAI1_SD SAI4_SD USART1 FMC_A1 EVENTO

PE3 TRACED0 - - - - - - - - -
KIN _B _B 0_TX 9 UT
DCMI_D
DFSDM1 TIM15_C SPI4_NS SAI1_FS SAI4_FS FMC_A2 EVENTO
PE4 TRACED1 - SAI1_D2 - - SAI4_D2 - 4/PSSI_ LCD_B0
_DATIN3 H1N S _A _A 0 UT
D4
Port E DCMI_D
SAI1_CK DFSDM1 TIM15_C SPI4_MI SAI1_SC SAI4_SC SAI4_CK FMC_A2 EVENTO
PE5 TRACED2 - - - - 6/PSSI_ LCD_G0
2 _CKIN3 H1 SO K_A K_A 2 1 UT
D6
TIM1_B DCMI_D
TIM1_B TIM15_C SPI4_M SAI1_SD SAI4_SD SAI4_M FMC_A2 EVENTO
PE6 TRACED3 SAI1_D1 - - SAI4_D1 KIN2_C 7/PSSI_ LCD_G1
KIN2 H2 OSI _A _A CLK_B 2 UT
OMP12 D7
OCTOS FMC_D4
TIM1_ET DFSDM1 UART7_ EVENTO
PE7 - - - - - - - PIM_P1_ - /FMC_A - -
R _DATIN2 RX UT
IO4 D4
OCTOS FMC_D5
STM32H725xE/G
TIM1_C DFSDM1 UART7_ COMP2_ EVENTO
PE8 - - - - - - - PIM_P1_ - /FMC_A -
H1N _CKIN2 TX OUT UT
IO5 D5
UART7_ OCTOS FMC_D6

TIM1_C DFSDM1 EVENTO
PE9 - - - - - RTS/UA - - PIM_P1_ - /FMC_A - -
H1 _CKOUT UT
RT7_DE IO6 D6
STM32H725xE/G
DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
OCTOS FMC_D7
TIM1_C DFSDM1 UART7_ EVENTO
PE10 - - - - - - - PIM_P1_ - /FMC_A - -
H2N _DATIN4 CTS UT
IO7 D7
OCTOS FMC_D8
TIM1_C DFSDM1 SPI4_NS SAI4_SD EVENTO
PE11 - - - - - - - PIM_P1_ /FMC_A - LCD_G3
H2 _CKIN4 S _B UT
NCS D8
DS13311 Rev 3
FMC_D9
TIM1_C DFSDM1 SPI4_SC SAI4_SC COMP1_ EVENTO
PE12 - - - - - - - - /FMC_A LCD_B4
H3N _DATIN5 K K_B OUT UT
D9
Port E

FMC_D1
TIM1_C DFSDM1 SPI4_MI SAI4_FS COMP2_ EVENTO
PE13 - - - - - - - - 0/FMC_ LCD_DE
H3 _CKIN5 SO _B OUT UT
AD10
FMC_D1
TIM1_C SPI4_M SAI4_M LCD_CL EVENTO
PE14 - - - - - - - - - 1/FMC_ -
H4 OSI CLK_B K UT
AD11
FMC_D1 TIM1_B
TIM1_B USART1 EVENTO
PE15 - - - - - - - - - - 2/FMC_ KIN_CO LCD_R7
KIN 0_CK UT
AD12 MP12
105/282
106/282

DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
OCTOS
I2C2_SD I2C5_SD TIM23_C EVENTO
PF0 - - - - - - - PIM_P2_ - - FMC_A0 -
A A H1 UT
IO0
OCTOS
I2C2_SC I2C5_SC TIM23_C EVENTO
PF1 - - - - - - - PIM_P2_ - - FMC_A1 -
L L H2 UT
IO1
DS13311 Rev 3
OCTOS
I2C2_S I2C5_S TIM23_C EVENTO
PF2 - - - - - - - PIM_P2_ - - FMC_A2 -
MBA MBA H3 UT
IO2
OCTOS
TIM23_C EVENTO
PF3 - - - - - - - - - PIM_P2_ - - FMC_A3 -
H4 UT
IO3
OCTOS
EVENTO
PF4 - - - - - - - - - PIM_P2_ - - FMC_A4 - -
UT
CLK
Port F
OCTOS
EVENTO
PF5 - - - - - - - - - PIM_P2_ - - FMC_A5 - -
UT
NCLK
OCTOS
TIM16_C FDCAN3 SPI5_NS SAI1_SD UART7_ SAI4_SD TIM23_C EVENTO
PF6 - - - - PIM_P1_ - - -
H1 _RX S _B RX _B H1 UT
IO3
OCTOS
TIM17_C FDCAN3 SPI5_SC SAI1_M UART7_ SAI4_M TIM23_C EVENTO
PF7 - - - - PIM_P1_ - - -
H1 _TX K CLK_B TX CLK_B H2 UT
IO2
STM32H725xE/G
UART7_ OCTOS
TIM16_C SPI5_MI SAI1_SC SAI4_SC TIM13_C TIM23_C EVENTO
PF8 - - - - RTS/UA PIM_P1_ - - -
H1N SO K_B K_B H1 H3 UT
RT7_DE IO0
OCTOS
TIM17_C SPI5_M SAI1_FS UART7_ SAI4_FS TIM14_C TIM23_C EVENTO
PF9 - - - - PIM_P1_ - - -
H1N OSI _B CTS _B H1 H4 UT
IO1
STM32H725xE/G
DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
OCTOS DCMI_D
TIM16_B PSSI_D1 EVENTO
PF10 - SAI1_D3 - - - - - PIM_P1_ SAI4_D3 - - 11/PSSI_ LCD_DE
KIN 5 UT
CLK D11
OCTOS DCMI_D
SPI5_M SAI4_SD FMC_N TIM24_C EVENTO
PF11 - - - - - - - - PIM_P1_ - 12/PSSI
OSI _B RAS H1 UT
NCLK _D12
DS13311 Rev 3
OCTOS
TIM24_C EVENTO
Port F PF12 - - - - - - - - - PIM_P2_ - - FMC_A6 -
H2 UT
DQS

DFSDM1 I2C4_S TIM24_C EVENTO
PF13 - - - - - - - - - - FMC_A7 -
_DATIN6 MBA H3 UT
DFSDM1 I2C4_SC TIM24_C EVENTO

PF14 - - - - - - - - - - FMC_A8 -
_CKIN6 L H4 UT
I2C4_SD EVENTO
PF15 - - - - - - - - - - - FMC_A9 - -
A UT
107/282
108/282

DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
OCTOS
UART9_ FMC_A1 EVENTO
PG0 - - - - - - - - - PIM_P2_ - - -
RX 0 UT
IO4
OCTOS
UART9_ FMC_A1 EVENTO
PG1 - - - - - - - - - PIM_P2_ - - -
TX 1 UT
IO5
DS13311 Rev 3
TIM8_B
TIM8_B FMC_A1 TIM24_E EVENTO
PG2 - - - - - - - - - - KIN_CO -
KIN 2 TR UT
MP12
TIM8_B
TIM8_B FMC_A1 TIM23_E EVENTO
PG3 - - - - - - - - - - KIN2_C -
KIN2 3 TR UT
OMP12
TIM1_B FMC_A1
TIM1_B EVENTO
PG4 - - - - - - - - - - KIN2_C 4/FMC_ - -
Port G KIN2 UT
OMP12 BA0
FMC_A1
TIM1_ET EVENTO
PG5 - - - - - - - - - - - 5/FMC_ - -
R UT
BA1
OCTOS DCMI_D
TIM17_B FMC_NE EVENTO
PG6 - - - - - - - - - PIM_P1_ - 12/PSSI LCD_R7
KIN 3 UT
NCS _D12
OCTOS DCMI_D
SAI1_M USART6 FMC_IN LCD_CL EVENTO
PG7 - - - - - - - PIM_P2_ - - 13/PSSI
CLK_A _CK T K UT
DQS _D13
STM32H725xE/G
USART6
SPI6_NS
TIM8_ET _RTS/U SPDIFR ETH_PP FMC_SD EVENTO
PG8 - - - - S/I2S6_ - - - - LCD_G7
R SART6_ X1_IN3 S_OUT CLK UT
WS
DE
STM32H725xE/G
DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
DCMI_V
SPI1_MI OCTOS FMC_NE
FDCAN3 USART6 SPDIFR SAI4_FS SDMMC SYNC/P EVENTO
PG9 - - - - SO/I2S1 - PIM_P1_ 2/FMC_ -
_TX _RX X1_IN4 _B 2_D0 SSI_RD UT
_SDI IO6 NCE
Y
OCTOS SPI1_NS DCMI_D

FDCAN3 SAI4_SD SDMMC FMC_NE EVENTO
PG10 - - PIM_P2_ - S/I2S1_ - - - LCD_G3 2/PSSI_ LCD_B2
_RX _B 2_D1 3 UT
IO6 WS D2
DS13311 Rev 3
ETH_MII
SPI1_SC OCTOS _TX_EN/ DCMI_D
LPTIM1_ USART1 SPDIFR SDMMC EVENTO
PG11 - - - K/I2S1_ - - PIM_P2_ ETH_RM - 3/PSSI_ LCD_B3

IN2 0_RX X1_IN1 2_D2 UT
CK IO7 II_TX_E D3
N
USART6 ETH_MII
OCTOS SPI6_MI
LPTIM1_ USART1 _RTS/U SPDIFR SDMMC _TXD1/E FMC_NE TIM23_C EVENTO
Port G PG12 - - PIM_P2_ SO/I2S6 - LCD_B4 LCD_B1
IN1 0_TX SART6_ X1_IN2 2_D3 TH_RMII 4 H1 UT
NCS _SDI
DE _TXD1
USART1 USART6 ETH_MII

SPI6_SC
LPTIM1_ 0_CTS/U _CTS/U SDMMC _TXD0/E FMC_A2 TIM23_C EVENTO
PG13 TRACED0 - - K/I2S6_ - - - LCD_R0
OUT SART10 SART6_ 2_D6 TH_RMII 4 H2 UT
CK
_NSS NSS _TXD0
USART1 ETH_MII
SPI6_M OCTOS
LPTIM1_ 0_RTS/U USART6 SDMMC _TXD1/E FMC_A2 TIM23_C EVENTO
PG14 TRACED1 - - OSI/I2S6 - - PIM_P1_ LCD_B0
ETR SART10 _TX 2_D7 TH_RMII 5 H3 UT
_SDO IO7
_DE _TXD1
USART6
OCTOS DCMI_D
_CTS/U USART1 FMC_N EVENTO
PG15 - - - - - - - - PIM_P2_ - 13/PSSI -
SART6_ 0_CK CAS UT
DQS _D13
NSS
109/282
110/282

DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
EVENTO
PH0 - - - - - - - - - - - - - - -
UT
EVENTO
PH1 - - - - - - - - - - - - - - -
UT
OCTOS
LPTIM1_ SAI4_SC ETH_MII FMC_SD EVENTO
PH2 - - - - - - - - PIM_P1_ - LCD_R0
DS13311 Rev 3
IN2 K_B _CRS CKE0 UT

IO4
OCTOS
SAI4_M ETH_MII FMC_SD EVENTO
PH3 - - - - - - - - - PIM_P1_ - LCD_R1
CLK_B _COL NE0 UT
IO5
OTG_HS
I2C2_SC PSSI_D1 EVENTO
PH4 - - - - - - - - LCD_G5 _ULPI_N - - LCD_G4
L 4 UT
XT
I2C2_SD SPI5_NS FMC_SD EVENTO

PH5 - - - - - - - - - - - -
A S NWE UT
Port H
DCMI_D
TIM12_C I2C2_S SPI5_SC ETH_MII FMC_SD EVENTO
PH6 - - - - - - - - 8/PSSI_ -
H1 MBA K _RXD2 NE1 UT
D8
DCMI_D
I2C3_SC SPI5_MI ETH_MII FMC_SD EVENTO
PH7 - - - - - - - - - 9/PSSI_ -
L SO _RXD3 CKE1 UT
D9
DCMI_H
TIM5_ET I2C3_SD FMC_D1 EVENTO
PH8 - - - - - - - - - - SYNC/P LCD_R2
R A 6 UT
SSI_DE
STM32H725xE/G
DCMI_D
TIM12_C I2C3_S FMC_D1 EVENTO
PH9 - - - - - - - - - - 0/PSSI_ LCD_R3
H2 MBA 7 UT
D0
DCMI_D
TIM5_C I2C4_S FMC_D1 EVENTO
PH10 - - - - - - - - - - 1/PSSI_ LCD_R4
H1 MBA 8 UT
D1
STM32H725xE/G
DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
DCMI_D
TIM5_C I2C4_SC FMC_D1 EVENTO
PH11 - - - - - - - - - - 2/PSSI_ LCD_R5
H2 L 9 UT
D2
DCMI_D
TIM5_C I2C4_SD FMC_D2 EVENTO
PH12 - - - - - - - - - - 3/PSSI_ LCD_R6
H3 A 0 UT
D3
DS13311 Rev 3
TIM8_C UART4_ FDCAN1 FMC_D2 EVENTO

Port H PH13 - - - - - - - - - - LCD_G2
H1N TX _TX 1 UT
DCMI_D

TIM8_C UART4_ FDCAN1 FMC_D2 EVENTO
PH14 - - - - - - - - - 4/PSSI_ LCD_G3
H2N RX _RX 2 UT
D4
DCMI_D
TIM8_C FMC_D2 EVENTO
PH15 - - - - - - - - - - - 11/PSSI_ LCD_G4
H3N 3 UT
D11
TIM1_C TIM8_C UART8_ EVENTO

PJ8 - - - - - - - - - - - LCD_G1
H3N H1 TX UT
TIM1_C TIM8_C UART8_ EVENTO

PJ9 - - - - - - - - - - - LCD_G2
H3 H1N RX UT
Port J
TIM1_C TIM8_C SPI5_M EVENTO
PJ10 - - - - - - - - - - - LCD_G3
H2N H2 OSI UT
TIM1_C TIM8_C SPI5_MI EVENTO

PJ11 - - - - - - - - - - - LCD_G4
H2 H2N SO UT
111/282
112/282

DFSDM1
CRS/FM
5/6 ART4 T1/2/3/6 5/8 DMMC2/ x/TIM8
TIM8
T1/10 4 T7/9/US
ART10
TIM1_C TIM8_C SPI5_SC EVENTO

PK0 - - - - - - - - - - - LCD_G5
H1N H3 K UT
TIM1_C TIM8_C SPI5_NS EVENTO

PK1 - - - - - - - - - - - LCD_G6
Port K H1 H3N S UT
TIM8_B TIM1_B
TIM1_B TIM8_B EVENTO
PK2 - - - - - - - - KIN_CO KIN_CO - - LCD_G7
DS13311 Rev 3
KIN KIN UT
MP12 MP12
STM32H725xE/G
STM32H725xE/G Electrical characteristics
6 Electrical characteristics
6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.
6.1.1 Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of junction temperature, supply voltage and frequencies by tests in production on
100% of the devices with an junction temperature at TJ = 25 °C and TJ = TJmax (given by the
selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes. Based on characterization, the minimum and maximum
values refer to sample tests and represent the mean value plus or minus three times the
standard deviation (mean±3σ).
6.1.2 Typical values

Unless otherwise specified, typical data are based on TJ = 25 °C, VDD = 3.3 V (for the
1.7 V ≤ VDD ≤ 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2σ).
6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 12.
6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 13.
Figure 12. Pin loading conditions Figure 13. Pin input voltage
MCU pin MCU pin
C = 50 pF VIN
MS19011V2 MS19010V2
DS13311 Rev 3 113/282

250
Electrical characteristics STM32H725xE/G
6.1.6 Power supply scheme
Figure 14. Power supply scheme
VDDSMPS
VLXSMPS Step
VFBSMPS Down
Converter
VSSSMPS
VCAP
LDO Core domain (VCORE)
VDDLDO voltage
regulator
Power
Power
switch
switch
VSS
D3 domain
(System
Level shifter
logic, D1 domain
IO EXTI, D2 domain (CPU, peripherals,
IOs (peripherals, RAM)
logic Peripherals,
RAM) RAM) Flash
VSS
VDD domain
LSI, HSI,
VDD CSI, HSI48, Power
VBAT HSE, PLLs switch
Backup domain
charging
VSW Backup VBKP
VBAT regulator
Power switch
LSE, RTC,
Wakeup logic, Backup
BKUP IO backup RAM
IOs logic registers, Reset
VSS
VSS
VDD50USB USB regulator VSS
VDD33USB
USB
FS IOs
VDDA Analog domain
REF_BUF ADC, DAC

VREF+ OPAMP,
VREF+
Comparator
VREF- VREF-
VSSA
MSv63814V5
1. Refer to application note AN5419 “Getting started with STM32H723/733, STM32H725/735 and
STM32H730 Value Line hardware development“ for the possible power scheme and connected capacitors.
114/282 DS13311 Rev 3

6.1.7 Current consumption measurement
Figure 15. Current consumption measurement scheme

LDO ON SMPS ON
IDD_VBAT IDD_VBAT
VBAT VBAT
IDD IDD
VDD VDD
VDDLDO VDDSMPS
VDDA VDDA
6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 10: Voltage characteristics,
Table 11: Current characteristics, and Table 12: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and the functional operation
of the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability. Device mission profile (application conditions)
is compliant with JEDEC JESD47 Qualification Standard, extended mission profiles are
available on demand.
Table 10. Voltage characteristics

Symbols Ratings Min Max Unit
External main supply voltage (including VDD,

VDDX - VSS(1) −0.3 4.0 V
VDDLDO, VDDSMPS, VDDA, VDD33USB, VBAT)
Min(VDD, VDDA,
Input voltage on FT_xxx pins VSS−0.3 VDD33USB, VBAT) V
+4.0(3)(4)
VIN(2) Input voltage on TT_xx pins VSS−0.3 4.0 V
Input voltage on BOOT0 pin VSS 9.0 V
Input voltage on any other pins VSS-0.3 4.0 V
Variations between different VDDX power
|∆VDDX| - 50 mV
pins of the same domain
Variations between all the different ground
|VSSx-VSS| - 50 mV
pins
1. All main power (VDD, VDDA, VDD33USB, VDDSMPS, VBAT) and ground (VSS, VSSA) pins must always be
connected to the external power supply, in the permitted range.
2. VIN maximum must always be respected.
3. This formula has to be applied on power supplies related to the IO structure described by the pin definition
table.
DS13311 Rev 3 115/282

250
4. To sustain a voltage higher than 4V the internal pull-up/pull-down resistors must be disabled.
Table 11. Current characteristics

Symbols Ratings Max Unit
ΣIVDD (1)
Total current into sum of all VDD power lines (source) 620
ΣIVSS Total current out of sum of all VSS ground lines (sink)(1) 620
IVDD Maximum current into each VDD power pin (source)(1) 100
(1)
IVSS Maximum current out of each VSS ground pin (sink) 100
Output current sunk by any I/O and control pin, except Px_C 20
IIO
Output current sunk by Px_C pins 1
mA
Total output current sunk by sum of all I/Os and control pins(2) 140
ΣI(PIN)
Total output current sourced by sum of all I/Os and control pins(2) 140
Injected current on FT_xxx, TT_xx, RST and B pins except PA4,
−5/+0
IINJ(PIN) (3)(4) PA5
Injected current on PA4, PA5 −0/0
ΣIINJ(PIN) Total injected current (sum of all I/Os and control pins)(5) ±25
1. All main power (VDD, VDDA, VDD33USB) and ground (VSS, VSSA) pins must always be connected to the
external power supplies, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output
current must not be sunk/sourced between two consecutive power supply pins referring to high pin count
QFP packages.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the
specified maximum value.
4. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer also to Table 10: Voltage characteristics for the maximum allowed input voltage
values.
5. When several inputs are submitted to a current injection, the maximum ∑IINJ(PIN) is the absolute sum of the
positive and negative injected currents (instantaneous values).
Table 12. Thermal characteristics

Symbol Ratings Value Unit
TSTG Storage temperature range − 65 to +150

Industrial temperature range 6 125
Maximum junction °C
TJ Extended Industrial
temperature 140
temperature range 3
116/282 DS13311 Rev 3

6.3 Operating conditions
6.3.1 General operating conditions
Table 13. General operating conditions

Operating
Symbol Parameter Min Typ Max Unit
conditions
VDD Standard operating voltage - 1.62(1) -

3.6
Supply voltage for the internal
VDDLDO VDDLDO ≤ VDD 1.62(1) - 3.6
regulator
Supply voltage for the internal
VDDSMPS VDDSMPS = VDD 1.62(1) - 3.6
SMPS Step-down converter
USB regulator ON 4 5 5.5
VDD50USB -
USB regulator OFF - VDD33USB -
Standard operating voltage, USB USB used 3.0 - 3.6

VDD33USB
domain USB not used 0 - 3.6
ADC or COMP used 1.62 -
DAC used 1.8 -
OPAMP used 2.0 - V
VDDA Analog operating voltage 3.6
VREFBUF used 1.8 -
ADC, DAC, OPAMP,
COMP, VREFBUF not 0 -
used
VBAT Supply voltage for Backup domain - 1.2(2) - 3.6
TT_xx I/O −0.3 - VDD+0.3

BOOT0 0 - 9
Min(VDD,
VIN I/O Input voltage
VDDA,
All I/O except BOOT0
−0.3 - VDD33USB)
and TT_xx
+3.6V <
5.5V(3)
VOS3 0.95 1.0 1.05
Internal regulator ON (LDO or VOS2 1.05 1.10 1.15

SMPS)(4) VOS1 1.15 1.21 1.26
VOS0 1.30 1.36 1.40
VCORE V
VOS3 0.98 1.03 1.08
Regulator OFF: external VCORE VOS2 1.08 1.13 1.18
voltage must be supplied from
external regulator on VCAP pins VOS1 1.18 1.23 1.28
VOS0 1.33 1.38 1.40
DS13311 Rev 3 117/282

250
Table 13. General operating conditions (continued)

Operating
conditions
VOS3 - - 170
VOS2 - - 300
VOS1 - - 400
fCPU Arm® Cortex®-M7 clock frequency
VOS0 - - 520
VOS0 and
- - 550
CPU_FREQ_BOOST
VOS3 - - 85
VOS2 - - 150
fACLK AXI clock frequency
VOS1 - - 200
MHz
VOS0 - - 275
VOS3 - - 85
VOS2 - - 150
fHCLK AHB clock frequency
VOS1 - - 200
VOS0 - - 275
VOS3 - - 42.5(5)
VOS2 - - 75
fPCLK APB clock frequency
VOS1 - - 100
VOS0 - - 137.5
Ambient temperature for Maximum power
−40 125
temperature range 3 dissipation
Maximum power
TA(6) −40 85 °C
Ambient temperature for dissipation
temperature range 6 Low-power
−40 105
dissipation(7)
1. When RESET is released, the functionality is guaranteed down to VPDRmax or down to the specified VDDmin when the PDR
is OFF. The PDR can only be switched OFF though the PDR_ON pin that not available in all packages.
2. VBAT minimum value can be reduced to 0 V if VDD is present.
3. This formula has to be applied on power supplies related to the I/O structure described by the pin definition table.
4. At startup, the external VCORE voltage must remain higher or equal to 1.10 V before disabling the internal regulator (LDO).
5. This value corresponds to the maximum APB clock frequency when at least one peripheral is enabled.
6. The device junction temperature must be kept below maximum TJ indicated in Table 14: Supply voltage and maximum
temperature configuration and the maximum temperature.
7. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.9:
Thermal characteristics).
118/282 DS13311 Rev 3

Table 14. Supply voltage and maximum temperature configuration

Power scale VCORE source Max. TJ (°C)(1) Min. VDD(V) Min. VDDLDO (V)
SMPS 2.2 -
LDO 1.7 1.7
VOS0 105
(2)
SMPS supplies LDO 3 1.7
External (Bypass) 1.62 1.62
140 2.2 -
SMPS
1.62 -
VOS1 LDO 1.62 1.62
125
SMPS supplies LDO 2.3 -
External (Bypass) 1.62 -
SMPS 140 1.62 -
LDO 1.62 1.62
VOS2
SMPS supplies LDO 125 2.3 -
External (Bypass) 1.62 -
SMPS 140 1.62 -
LDO 1.62 1.62
VOS3
SMPS supplies LDO 125 2.3 -
external (Bypass)E 1.62 -
SMPS 140 1.62 -
125 2 2
LDO
105 1.62 1.62
SVOS4/SVOS5
(2)
125 3 2
SMPS supplies LDO
105 2.3 -
External (Bypass) 125 1.62 -
1. 140 °C can be reached only for part numbers in temperature range 3. For part numbers in temperature
range 6, this value must be decreased to 125 °C.
2. The SMPS must be configured to output 2,5 V.
DS13311 Rev 3 119/282

250
6.3.2 VCAP external capacitor

Stabilization for the main regulator is achieved by connecting an external capacitor CEXT to
the VCAP pin. CEXT is specified in Table 15. Two external capacitors can be connected to
VCAP pins.
Figure 16. External capacitor CEXT
ESR
R Leak
MS19044V2
1. Legend: ESR is the equivalent series resistance.
Table 15. VCAP operating conditions(1)

Symbol Parameter Conditions
CEXT Capacitance of external capacitor 2.2 µF(2)(3)

ESR ESR of external capacitor < 100 mΩ
1. When bypassing the voltage regulator, the two 2.2 µF VCAP capacitors are not required and should be
replaced by two 100 nF decoupling capacitors.
2. This value corresponds to CEXT typical value. A variation of +/-20% is tolerated.
3. If a third VCAP pin is available on the package, it must be connected to the other VCAP pins but no
additional capacitor is required.
6.3.3 SMPS step-down converter

The devices embed a high power efficiency SMPS step-down converter. SMPS
characteristics for external usage are given in Table 17. The SMPS step-down converter
requires external components that are fully described in AN5419 “Getting started with
STM32H723/733, STM32H725/735 and STM32H730 Value Line hardware development”,
The components used for datasheet characterization are specified in Figure 17 and
Table 16.
120/282 DS13311 Rev 3

Figure 17. External components for SMPS step-down converter
VDD VDDSMPS VDD VDDSMPS
Cin L VLXSMPS Cin L VLXSMPS
SMPS SMPS
VFBSMPS Cfilt VFBSMPS Cfilt
(ON) VVDD_ (ON)
DD_
External
External
Cout1 VSSSMPS 2xCou1 VSSSMPS
VCAP VCAP
VDDLDO VVCORE
CORE VDDLDO VVCORE
CORE
Voltage Voltage
Cout2 regulator Cout2 regulator
VSS (OFF) VSS (ON)
External SMPS supply, LDO supplied

Direct SMPS supply
by SMPS
MSv61398V4
Table 16. Characteristics of SMPS step-down converter external components

Capacitance of external capacitor on VDDSMPS 4.7 µF

Cin
ESR of external capacitor 100 mΩ
Cfilt Capacitance of external capacitor on VLXSMPS pin 220 pF
Capacitance of external capacitor on VFBSMPS pin 10 µF
COUT
ESR of external capacitor 20 mΩ
L Inductance of external Inductor on VLXSMPS pin 2.2 µH
- Serial DC resistor 150 mΩ
DC current at which the inductance drops 30% from
ISAT 1.7 A
its value without current.
Average current for a 40 °C rise: rated current for
IRMS which the temperature of the inductor is raised 40°C 1.4 A
by DC current
Table 17. SMPS step-down converter characteristics for external usage

Parameters Conditions Min Typ Max Unit
VOUT = 1.8 V 2.3 - 3.6

VDDSMPS(1) V
VOUT = 2.5 V 3 - 3.6
2.25 2.5 2.75
VOUT(2) Iout=600 mA V
1.62 1.8 1.98
internal and external usage - - 600
IOUT mA
(3)
External usage only - - 600
RDSON - - 100 120 mΩ
DS13311 Rev 3 121/282

250
Table 17. SMPS step-down converter characteristics for external usage (continued)
Parameters Conditions Min Typ Max Unit
IDDSMPS_Q Quiescent current - 220 - µA

VOUT = 1.8 V - 270 405
TSMPS_START µs
VOUT = 2.5 V - 360 540
1. The switching frequency is 2.4 MHz±10%
2. Including line transient and load transient.
3. These characteristics are given for SDEXTHP bit is set in the PWR_CR3 register.
Table 18. Inrush current and inrush electric charge characteristics for LDO and
SMPS(1)(2)
Symbol Parameter Conditions - Min Typ Max Unit
Inrush current on voltage on VDDLDO(3) - - 55 96(4)

regulator power-on
(POR or wakeup from SMPS supplies
on VDDSMPS(5) - 100 420(6)
Standby) the VDDCORE
SMPS supplies
internal LDO, - 130 400(6)
VOUT = 1. 8 V(7)
SMPS supplies
internal LDO, - - 300(6)
Inrush current on voltage VOUT = 2.5 V(7)
regulator power-on on VDDSMPS(5)
(POR) SMPS supplies
IRUSH mA
external circuit, - 100 320(6)
VOUT = 1.8 V(7)
SMPS supplies
external circuit, - - 240(6)
VOUT = 2.5 V(7)
SMPS supplies
Inrush current on voltage VOUT = 1.8 V
(wakeup from Standby) SMPS supplies
VOUT = 2.5 V
122/282 DS13311 Rev 3

Table 18. Inrush current and inrush electric charge characteristics for LDO and
SMPS(1)(2) (continued)
Symbol Parameter Conditions - Min Typ Max Unit
Inrush current on voltage on VDDLDO(3) - - 4.4 5.3 (4)
regulator power-on
(POR or wakeup from SMPS supplies
on VDDSMPS(5) - 7.3 18(6)
Standby) the VDDCORE
SMPS supplies
internal LDO, - 17(6)
VOUT = 1. 8 V(7)
8.8
SMPS supplies
internal LDO, - 13(6)
Inrush current on voltage VOUT = 2.5 V(7)
(POR) SMPS supplies
QRUSH μC
external circuit, - 13.7(6)
VOUT = 1.8 V(7)
7.3
SMPS supplies
external circuit, - 10.5(6)
VOUT = 2.5 V(7)
SMPS supplies
internal LDO, - 15.0 28(6)
Inrush current on voltage VOUT = 1.8 V
(wakeup from Standby) SMPS supplies
internal LDO, - 28.0 39(6)
VOUT = 2.5 V
1. The typical values are given for VDDLDO = VDDSMPS = 3.3 V and for typical decoupling capacitor values of
CEXT and COUT.
2. The product consumption (on VDDCORE) is not taken into account in the inrush current and inrush electric
charges.
3. The inrush current and inrush electric charge on VDDLDO are not present in Bypass mode or when the
SMPS supplies the VDDCORE.
4. The maximum value is given for the maximum decoupling capacitor CEXT.
5. The inrush current and inrush electric charges on VDDSMPS are not present if the external component (L
or COUT) is not present that is if the SMPS is not used.
6. The maximum value is given for the maximum decoupling capacitor COUT and the minimum VDDSMPS
voltage.
7. The inrush current due to transition from 1.2 V to the final VOUT Value (1.8 V or 2.5 V) is not taken into
account.
DS13311 Rev 3 123/282

250
6.3.4 Operating conditions at power-up / power-down

Subject to general operating conditions for TA.
Table 19. Operating conditions at power-up/power-down

Symbol Parameter Min Max Unit
VDD rise time rate 0 ∞

tVDD
VDD fall time rate 10 ∞
VDDA rise time rate 0 ∞
tVDDA
VDDA fall time rate 10 ∞
µs/V
VDDUSB rise time rate 0 ∞
tVDDUSB
VDDUSB fall time rate 10 ∞
VCORE rise time rate(2) 0 285
tVCORE(1)
VCORE fall time rate 10 ∞
1. tVCORE should be achieved when VCORE is provided by an external supply voltage (bypass with
VDDLDO = VCORE).
2. VCORE rising slope must respect the above constraints. There are no constraints on the delay between VDD
rising and VCORE rising,
124/282 DS13311 Rev 3

6.3.5 Embedded reset and power control block characteristics

The parameters given in Table 20 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 13: General operating
conditions.
Table 20. Reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit
Reset temporization
tRSTTEMPO(1) - - 377 550 µs
after BOR0 released
Power-on/power-down reset Rising edge(1) 1.62 1.67 1.71

VPOR/PDR
threshold Falling edge 1.58 1.62 1.68
Rising edge 2.04 2.10 2.15
VBOR1 Brown-out reset threshold 1
Falling edge 1.95 2.00 2.06
Rising edge 2.34 2.41 2.47
Rising edge 2.63 2.70 2.78
Programmable Voltage Rising edge 1.90 1.96 2.01

VPVD0
Detector threshold 0 Falling edge 1.81 1.86 1.91

VPVD1 V

VPVD2

VPVD3

VPVD4

VPVD5

VPVD6
Detector threshold 6 Falling edge in Run mode 2.69 2.76 2.83
Hysteresis voltage for
VPOR/PDR Hysteresis in Run mode - 43.00 -
Power-on/power-down reset mV
Vhyst_BOR_PVD Hysteresis voltage for BOR Hysteresis in Run mode - 100 -
BOR and PVD consumption
IDD_BOR_PVD(1) - - - 0.630
from VDD
µA
POR and PVD consumption
IDD_POR_PVD - 0.8 - 1.200
from VDD
DS13311 Rev 3 125/282

250
Table 20. Reset and power control block characteristics (continued)

Analog voltage detector for Rising edge 1.66 1.71 1.76

VAVM_0
VDDA threshold 0 Falling edge 1.56 1.61 1.66

VAVM_1
V
VAVM_2

VAVM_3
Hysteresis of VDDA voltage
Vhyst_VDDA - - 100 - mV
detector
PVM consumption from
IDD_PVM - - - 0.25 µA
VDD(1)
Voltage detector
IDD_VDDA Resistor bridge - - 2.5 µA
consumption on VDDA(1)
1. Guaranteed by design.
6.3.6 Embedded reference voltage characteristics

conditions.
Table 21. Embedded reference voltage

VREFINT Internal reference voltages -40°C < TJ < TJmax 1.180 1.216 1.255 V
ADC sampling time when
tS_vrefint(1)(2)
(3) reading the internal reference - 4.3 - -
voltage
VBAT sampling time when
µs
tS_vbat(2) reading the internal VBAT - 9 - -
reference voltage
Start time of reference voltage
tstart_vrefint(2) - - - 4.4
buffer when ADC is enable
Reference Buffer
Irefbuf(2) VDD = 3.3 V 9 13.5 23 µA
consumption for ADC
Internal reference voltage
ΔVREFINT(2) spread over the temperature -40°C < TJ < TJmax - 5 15 mV
range
Average temperature Average temperature
Tcoeff(2) - 20 70 ppm/°C
coefficient coefficient
VDDcoeff(2) Average Voltage coefficient 3.0 V < VDD < 3.6 V - 10 1370 ppm/V
126/282 DS13311 Rev 3

Table 21. Embedded reference voltage (continued)

VREFINT_DIV1 1/4 reference voltage - - 25 -
%
VREFINT
1. The shortest sampling time for the application can be determined by multiple iterations.
3. Guaranteed by design. and tested in production at 3.3 V.
Table 22. Internal reference voltage calibration values

Symbol Parameter Memory address
VREFIN_CAL Raw data acquired at temperature of 30 °C, VDDA = 3.3 V 1FF1 E860 - 1FF1 E861
6.3.7 Embedded USB regulator characteristics

conditions.
Table 23. USB regulator characteristics

VDD50USB Supply voltage - 4 5 5.5 V

IDD50USB Current consumption - - 14 - µA
VREGOUTV33V Regulated output voltage - 3 - 3.6 V
Output current load sinked by
IOUT - - - 20 mA
USB block
TWKUP Wakeup time - - 120 170 us
6.3.8 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 15: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a CoreMark code.
DS13311 Rev 3 127/282

250
Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in analog input mode.
• All peripherals are disabled except when explicitly mentioned.
• The Flash memory access time is adjusted with the minimum wait states number,
depending on the fACLK frequency (refer to the table “Number of wait states according to
CPU clock (frcc_c_ck) frequency and VCORE range” available in the reference manual).
• When the peripherals are enabled, the AHB clock frequency is the CPU frequency
divided by 2 and the APB clock frequency is AHB clock frequency divided by 2.
• For typical values, the power supply is 3 V unless otherwise specified.
The parameters given in the below tables are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 13: General operating
conditions.
128/282 DS13311 Rev 3


code with data processing running from ITCM(1)
Max
Typ Max LDO regulator ON(2) SMPS
Typ
frcc_c_ck LDO
SMPS ON(3) Unit
(MHz) regulator
ON
ON TJ = TJ = TJ = TJ = TJ =
25 °C 85 °C 105 °C 125 °C 140 °C
VOS0 550 145 81 170 260 330 - -

(4)
520 135 76 160 260 320 - -
520 135 76 160 260 320 - -
480 125 72.5 150 250 310 - -
VOS0
450 115 67.5 150 240 300 - -
400 105 60 130 230 290 - -
400 90.5 47 110 170 220 280 160
VOS1
300 69.5 36.5 84 150 200 260 150
All
peripherals 300 63 31.5 74 130 170 220 110
disabled
280 58 29 69 120 160 210 110
VOS2
216 45.5 22.5 56 110 150 200 110
200 42 21 53 110 140 200 110
Supply 170 32.5 15 40 80 110 160 74
IDD current in mA
Run mode 168 32 15 40 79 110 160 74
VOS3 144 28 13.5 36 75 110 150 74
60 13.5 6.7 21 61 90 140 67
25 6.9 3.6 14 54 83 130 67
VOS0 550 215 125 250 360 430 - -

(4)
520 205 120 240 350 420 - -
520 205 120 240 350 420 - -
VOS0
400 160 92.5 190 300 370 - -
All
peripherals 400 135 72 160 230 290 360 200
enabled VOS1
300 105 54.5 130 200 250 330 180
300 95 46.5 110 170 210 280 140
VOS2
280 88 43 100 160 210 270 140
VOS3 170 49 22.5 58 110 140 190 93
1. Data are in DTCM for best computation performance, the cache has no influence on consumption in this case.
2. Guaranteed by characterization results, unless otherwise specified. Refer to Section 6.3.3: SMPS step-down converter for the SMPS
maximum consumption.
3. The parameter values given in the above table for the SMPS regulator are extrapolated from the LDO consumption and typical SMPS
efficiency factors.
4. CPU_FREQ_BOOST is enabled.
DS13311 Rev 3 129/282

250
Table 25. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory, cache ON(1)
Max
Typ Max LDO regulator ON(2) SMPS
Typ
frcc_c_ck LDO
SMPS ON(3) Unit
(MHz) regulator
ON
25 °C 85 °C 105 °C 125 °C 140 °C
VOS0 550 145 83.5 170 270 330 - -

(4)
520 140 78.5 170 260 320 - -
520 140 78.5 170 260 320 - -

VOS0
400 110 62 140 230 290 - -
400 92 48.5 110 180 220 290 160

VOS1
300 71 37.5 86 150 200 260 150
300 64 32 75 130 170 220 110

All 280 59 29.5 70 120 160 210 110
peripherals
disabled VOS2 216 46.5 23 - - - - -
200 42.5 21.5 53 110 140 200 110

180 36 17 43 83 120 160 85
170 33.5 15.5 41 81 110 160 74

Supply
IDD current in 168 33 15.5 - - - - - mA
Run mode
VOS3 144 29 13.5 - - - - -
60 14 6.85 - - - - -
25 6.85 3.7 - - - - -
VOS0 550 220 130 250 360 430 - -

(4)
520 210 120 240 350 420 - -
520 210 120 240 350 420 - -

VOS0
400 160 94.5 190 300 370 - -
All
peripherals 400 140 73 160 240 290 360 200
enabled VOS1
300 105 55.5 130 200 250 330 180
300 96 47 110 170 210 280 140

VOS2
280 89 43.5 110 160 210 270 140
VOS3 170 50 23 59 110 140 190 93
1. Data are in DTCM for best computation performance, the cache has no influence on consumption in this case.
2. Guaranteed by characterization results, unless otherwise specified. Refer to Section 6.3.3: SMPS step-down converter for
the SMPS maximum consumption.
3. The parameter values given in the above table for the SMPS regulator are extrapolated from the LDO consumption and
typical SMPS efficiency factors.
130/282 DS13311 Rev 3


code with data processing running from Flash memory, cache OFF(1)
Typ
Typ
frcc_c_ck LDO
Symbol Parameter Conditions SMPS Unit
(MHz) regulator
ON
ON
550 99 59.5
VOS0(2)
520 95 56
520 95 56
VOS0
400 76.5 47
All peripherals
400 66.5 38
disabled VOS1
300 51.5 30
300 47.5 26
VOS2
280 43.5 24
Supply current VOS3 170 24.5 13

IDD mA
in Run mode 550 170 100
VOS0(2)
520 165 95.5
520 165 95.5
VOS0
400 130 77.5
All peripherals
400 115 62
enabled VOS1
300 87 47.5
300 79 41.5
VOS2
280 73.5 38
VOS3 170 41 20.5
1. Data are in DTCM for best computation performance, the cache has no influence on consumption in this
case.
DS13311 Rev 3 131/282

250
Table 27. Typical consumption in Run mode and corresponding performance

versus code position
Conditions Typ
Typ SMPS
frcc_c_c k LDO LDO IDD/
Symbol Parameter Coremark SMPS Unit IDD/ Unit
(MHz) regulator Coremark
Peripheral Code ON Coremark
ON
ITCM 550 2777 145 81 52.2 29.2
FLASH 550 2777 145 83.5 52.2 30.1

All
peripherals AXI
550 2777 145 83.5 52.2 30.1
disabled, SRAM
cache ON
SRAM 1 550 2777 150 86 54.0 31.0
Supply µA/
IDD current in SRAM 4 550 2777 145 83.5 mA 52.2 30.1 Core-
Run mode mark
FLASH 550 923 99 59.5 107.3 64.5
All AXI
peripherals SRAM 550 1271 105 60.5 82.6 47.6
disabled
cache OFF SRAM 1 550 790 96.5 54.5 122.2 69.0
SRAM 4 550 723 89.5 50.5 123.8 69.8
Table 28. Typical current consumption in Autonomous mode

Typ
frcc_c_c k Typ
Symbol Parameter Conditions LDO Unit
(MHz) SMPS ON
regulator ON
Run, D1Stop,
VOS3 64 3.6 2.2
D2Stop
Supply current in
IDD Run, mA
Autonous mode
D1Standby, VOS3 64 2.6 1.6
D2Standby
Table 29. Typical and maximum current consumption in Sleep mode

Max
Typ Max LDO regulator ON(1)(2) SMPS
Typ
frcc_c_ck LDO ON(3)
(MHz) regulator
ON
25 °C 85 °C 105 °C 125 °C 140 °C
VOS0 550 36 20.5 - - - - -

(4)
520 33.5 19.5 60 170 240 - -
520 33.5 19.5 60 170 240 - -

VOS0
400 27 16 52 160 230 - -
Supply All
IDD(Sleep) current in peripherals 400 22.5 12.5 39 110 170 240 140 mA
Sleep mode disabled VOS1
300 18.5 10.5 34 110 160 240 140
300 16.5 8.75 28 85 130 190 110

VOS2
170 9.7 5.2 21 78 120 190 110
VOS3 170 8.5 4.35 17 61 96 150 74
132/282 DS13311 Rev 3

1. Guaranteed by characterization results.

2. Refer to Section 6.3.3: SMPS step-down converter for the SMPS maximum consumption.
Table 30. Typical and maximum current consumption in System Stop mode
Max
Typ Max LDO regulator ON(1)(2) SMPS
Typ
LDO ON(3)
regulator
ON(3)
25 °C 85 °C 105 °C 125 °C 140 °C
SVOS5 0.52 0.2 3.7 26.0 44.0 72.0 50.0

Flash memory in
SVOS4 0.81 0.34 6.1 39.0 64.0 110.0 70.0
low-power mode
D1, D2 and
D3 domains SVOS3 1.15 0.51 8.6 51.0 83.0 130.0 100.0
in DStop SVOS5 0.535 0.2 3.7 26.0 44.0 72.0 50.0
mode Flash memory in
normal mode, SVOS4 0.96 0.4 6.2 39.0 64.0 110.0 75.0
IWDG OFF
SVOS3 1.45 0.65 8.8 51.0 83.0 130.0 100.0
SVOS5 0.48 0.19 3.3 23.0 39.0 63.0 43.0
Flash memory in
D1 and D3 low-power mode, SVOS4 0.73 0.31 5.4 34.0 56.0 88.0 58.0
domains in IWDG OFF
DStop mode, SVOS3 1 0.46 7.7 45.0 72.0 120.0 71.0
D2 domain in SVOS5 0.46 0.18 3.3 23.0 39.0 63.0 43.0
IDD(Stop) DStandby Flash memory in mA
mode normal mode, SVOS4 0.9 0.38 5.6 34.0 56.0 89.0 58.0
IWDG OFF
SVOS3 1.17 0.52 7.8 45.0 72.0 120.0 71.0
D1 domain in SVOS5 0.15 0.069 0.8 5.4 9.2 16.0 9.8
DStandby
mode, D2 SVOS4 0.21 0.098 1.3 7.9 14.0 22.0 14.0
and D3
domains in SVOS3 0.275 0.15 1.8 11.0 18.0 28.0 17.0
DStop mode Flash memory in
low-power mode,
D1 and D2 IWDG OFF SVOS5 0.095 0.055 0.3 2.1 3.6 5.9 3.8
domains in
DStandby SVOS4 0.12 0.064 0.5 3.2 5.2 8.3 5.1
mode, D3
domain in SVOS3 0.15 0.084 0.8 4.2 6.8 11.0 6.3
DStop mode

2. Refer to Section 6.3.3: SMPS step-down converter for the SMPS maximum consumption.
DS13311 Rev 3 133/282

250
Table 31. Typical and maximum current consumption in Standby mode

Max at
Max at 3.6 V with LDO 3.6 V with
Conditions Typ(1)
regulator ON(2) SMPS
ON(3)
Symbol Parameter Unit
RTC TJ = TJ = TJ = TJ =
Backup 1.65
and 2.4 V 3V 3.3 V 25 ° 85 ° 105 ° 125 ° TJ = 140 °C
SRAM V
LSE(4) C C C C
Supply OFF OFF 2.2 2.35 2.5 2.8 - - - - -

current in ON OFF 3.5 3.7 4 4.3 - - - - -
IDD
Standby µA
(Standby) mode, OFF ON 2.2 2.4 2.85 3.25 4.5 15 30 64 96
IWDG OFF
ON ON 3.5 3.8 4.35 4.75 8.3 39 75 140 180
1. These values are given for PDR OFF. When the PDR is ON, the typical current consumption is increased (refer to Table 20:
Reset and power control block characteristics.
4. The LSE is in Low-drive mode.
Table 32. Typical and maximum current consumption in VBAT mode

Max at
3.6 V
Max at 3.6 V with LDO
Conditions Typ with
regulator ON(1)(2)
SMPS
Sym- Para-
ON(1)(2) Unit
bol meter
Back- RTC TJ = TJ = TJ =
TJ = TJ =
up and 1.2 V 2V 3V 3.3 V 85 ° 105 125
25 °C 140 °C
SRAM LSE(3) C °C °C
OFF OFF 0.008 0.01 0.025 0.05 0.3 3.1 7.4 18 34

Supply
IDD current ON OFF 1.5 1.7 1.9 1.9 4 28 53 91 110
µA
(VBAT) in VBAT OFF ON 0.4 0.5 0.75 0.8 - - - - -
mode
ON ON 1.8 2.1 2.8 3.2 - - - - -
2. The LDO regulator is used before switching to VBAT mode.
3. The LSE is in Low-drive mode.
134/282 DS13311 Rev 3

Typical SMPS efficiency versus load current and temperature
Figure 18. Typical SMPS efficiency (%) vs load current (A) in Run mode at TJ = 30 °C
°C
100
90
80
70
VDDSMPS =
3.3V, VOS0
60 VDDSMPS =
1.8V, VOS1
VDDSMPS =
50 3.3V, VOS1
VDDSMPS =
1.8V, VOS2
VDDSMPS =
40 3.3V, VOS2
VDDSMPS =
1.8V, VOS3
VDDSMPS =
30 3.3V, VOS3
20
10
0
0.001 0.01 0.1 1
MSv65350V2
Figure 19. Typical SMPS efficiency (%) vs load current (A) in Run mode at TJ = TJmax
100
90
80
70
60
VDDSMPS = 1.8V,
VOS1
50 VDDSMPS =
3.3V,VOS1
VDDSMPS = 1.8V,
VOS2
40 VDDSMPS = 3.3V,
VOS2
VDDSMPS = 1.8V,
30 VOS3
20
10
0
0.001 0.01 0.1 1
MSv65350V1
DS13311 Rev 3 135/282

250
Figure 20. Typical SMPS efficiency (%) vs load current (A) in Stop and
DStop modes at TJ = 30 °C
100
90
80
70
VDDSMPS =
60
1.8V, SVOS5
VDDSMPS =
3.3V, SVOS5
50
VDDSMPS =
1.8V, SVOS4
VDDSMPS =
40 3.3V, SVOS4
VDDSMPS =
1.8V, SVOS3
30
VDDSMPS =
3.3V, SVOS3
20
10
current (A)
0
0.00001 0.0001 0.001 0.01 0.1
MSv65352V1
Figure 21. Typical SMPS efficiency (%) vs load current (A) in low-power mode at
TJ = TJmax
100
90
80
70
VDDSMPS =
60
1.8V, SVOS5
VDDSMPS =
3.3V, SVOS5
50
VDDSMPS =
1.8V, SVOS4
VDDSMPS =
40 3.3V, SVOS4
VDDSMPS =
1.8V, SVOS3
30
VDDSMPS =
3.3V, SVOS3
20
10
0
0.00001 0.0001 0.001 0.01 0.1
MSv65353V1
136/282 DS13311 Rev 3

I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate a current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 55: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
An additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid a current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (see Table 33: Peripheral current
consumption in Run mode), the I/Os used by an application also contribute to the current
consumption. When an I/O pin switches, it uses the current from the MCU supply voltage to
supply the I/O pin circuitry and to charge/discharge the capacitive load (internal or external)
connected to the pin:
I SW = V DDx × f SW × C L
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDx is the MCU supply voltage
fSW is the I/O switching frequency
CL is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
DS13311 Rev 3 137/282

250
On-chip peripheral current consumption

The MCU is placed under the following conditions:
• At startup, all I/O pins are in analog input configuration.
• All peripherals are disabled unless otherwise mentioned.
• The I/O compensation cell is enabled.
• frcc_c_ck is the CPU clock. fPCLK = frcc_c_ck/4, and fHCLK = frcc_c_ck/2.
The given value is calculated by measuring the difference of current consumption
– with all peripherals clocked off
– with only one peripheral clocked on
– frcc_c_ck = 550 MHz (Scale 0), frcc_c_ck = 400 MHz (Scale 1), frcc_c_ck = 300 MHz
(Scale 2), frcc_c_ck = 170 MHz (Scale 3)
• The ambient operating temperature is 25 °C and VDD=3.3 V
• The LDO regulator supplies VCORE.
Table 33. Peripheral current consumption in Run mode

IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3
MDMA 3.70 3.10 2.90 2.60

DMA2D 2.70 2.30 2.10 1.90
Flash memory 15.20 14.00 12.00 10.90
FMC registers 0.90 0.90 0.80 0.70
FMC kernel 7.00 6.10 5.60 5.40
OCTOSPI1 registers 1.40 1.30 0.50 0.40
OCTOSPI1 kernel 3.10 1.20 0.50 0.20
AHB3 µA/MHz
SDMMC1 registers 8.70 7.60 6.90 6.10
SDMMC1 kernel 2.10 1.80 1.40 1.20
OCTOSPI2 registers 1.40 1.30 0.90 0.60
OCTOSPI2 kernel 2.50 1.50 1.40 0.50
AXI SRAM 8.50 7.50 6.90 6.00
DMA1 0.70 0.60 0.50 0.40
DMA2 1.00 0.80 0.70 0.70
DMAMUX1 0.10 0.10 0.10 0.10
ADC1/2 registers 4.50 4.00 3.60 2.30
AHB1 ADC1/2 kernel 0.90 0.80 0.60 0.40 µA/MHz
USB1 registers 20.80 17.50 16.50 14.80
USB1 kernel 1.20 0.90 0.90 0.90
USB1 ULPI kernel 31.00 30.00 29.50 27.00
Ethernet 17.30 14.40 13.70 12.30
138/282 DS13311 Rev 3

Table 33. Peripheral current consumption in Run mode (continued)

IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3
DCMI 4.80 4.00 3.80 3.40

HSEM 0.60 0.60 0.10 0.10
RNG1 registers 1.20 1.00 0.90 0.70
RNG1 kernel 15.00 13.60 10.00 9.00
SDMMC2 registers 15.00 12.20 11.70 10.40
SDMMC2 kernel 2.10 1.80 1.40 1.20
AHB2 BDMA 6.50 5.90 4.80 4.30 µA/MHz
SRAM1 2.40 2.00 1.80 1.60
SRAM2 2.70 2.30 2.00 1.80
CORDIC 0.80 0.60 0.50 0.50
FMAC 2.40 2.10 1.90 1.60
GPIOA 0.10 0.10 0.10 0.10
GPIOB 0.90 0.80 0.10 0.10
GPIOC 0.50 0.10 0.10 0.10
GPIOD 0.90 0.80 0.10 0.10
GPIOE 0.90 0.80 0.10 0.10
GPIOF 0.30 0.10 0.10 0.10
GPIOG 0.90 0.80 0.30 0.20
GPIOH 0.10 0.10 0.10 0.10
AHB4
GPIOJ 0.90 0.80 0.30 0.20
µA/MHz
GPIOK 0.80 0.80 0.10 0.10
HSEM 0.60 0.60 0.10 0.10
BDMA 6.50 5.90 4.80 4.30
CRC 0.90 0.30 0.30 0.30
ADC3 registers 2.10 1.40 1.30 1.20
ADC3 kernel 0.40 0.30 0.30 0.20
Backup SRAM 1.80 1.00 1.00 0.80
LTDC 9.00 7.90 7.70 6.40
APB3
WWDG1 0.60 0.50 0.50 0.50
DS13311 Rev 3 139/282

250

IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3
TIM2 4.50 4.40 3.30 3.00

TIM3 3.80 3.20 2.90 2.70
TIM4 3.60 3.10 2.60 2.50
TIM5 4.10 3.40 3.10 2.90
TIM6 1.50 1.10 1.00 1.00
TIM7 1.40 1.10 0.90 0.90
TIM12 2.30 1.80 1.60 1.60
TIM13 1.90 1.40 1.30 1.20
TIM14 1.60 1.20 1.10 1.10
TIM23 4.60 3.90 3.60 3.40
TIM24 4.40 3.80 3.50 3.30
LPTIM1 registers 3.50 2.90 2.70 2.60
LPTIM1 kernel 2.60 2.30 2.00 1.80
SPI2 registers 2.10 1.60 0.90 0.80
SPI2 kernel 1.50 1.20 1.10 1.00
SPI3 registers 2.40 2.00 1.90 1.80
APB1 SPDIFRX registers 0.60 0.50 0.50 0.50 µA/MHz
SPDIFRX kernel 3.50 2.80 2.40 2.20
USART2 registers 6.60 5.70 5.20 4.90
USART2 kernel 4.80 4.80 4.60 3.80
USART3 registers 5.90 5.40 4.60 4.30
USART3 kernel 4.00 3.40 3.00 2.90
UART4 registers 5.60 4.80 3.50 3.10
UART4 kernel 3.80 3.20 3.00 2.40
UART5 registers 5.60 4.60 4.40 4.00
UART5 kernel 3.90 3.40 3.30 3.20
UART7 registers 5.40 4.60 4.20 3.90
UART7 kernel 3.80 3.30 3.00 3.00
UART8 registers 5.60 4.10 3.50 3.40
UART8 kernel 3.60 3.20 3.20 3.10
I2C1 registers 0.90 0.60 0.60 0.50
I2C1 kernel 2.30 2.00 1.80 1.60
I2C2 registers 1.00 0.70 0.60 0.60
140/282 DS13311 Rev 3


IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3
I2C2 kernel 2.30 1.90 1.70 1.20

I2C3 registers 0.90 0.60 0.50 0.50
I2C3 kernel 2.30 2.00 1.00 1.00
I2C5 registers 0.90 0.60 0.50 0.50
I2C5 kernel 2.20 2.10 1.90 1.80
CEC registers 0.60 0.30 0.20 0.20
CEC kernel 0.10 0.10 0.10 0.10
APB1 µA/MHz
DAC1 1.60 1.30 1.10 1.10
FDCAN1/2/3 registers 24.10 20.90 18.20 17.40
FDCAN1/2/3 kernel 9.90 9.90 9.00 8.00
CRS 4.90 3.90 3.50 3.20
SWPMI registers 1.10 0.80 0.80 0.80
SWPMI kernel 1.50 1.10 1.00 1.00
OPAMP 0.50 0.40 0.30 0.20
DS13311 Rev 3 141/282

250

IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3
TIM1 5.30 4.40 4.20 3.80

TIM8 5.60 5.40 5.20 3.90
USART1 registers 1.80 1.60 1.40 1.10
USART1 kernel 3.00 2.90 2.80 2.70
USART6 registers 1.90 1.70 1.50 1.20
USART6 kernel 4.50 4.00 3.60 3.10
UART9 registers 1.70 1.70 1.60 1.10
UART9 kernel 3.80 3.30 2.90 2.90
USART10 registers 1.80 1.70 1.40 1.10
USART10 kernel 3.80 3.30 2.90 2.90
SPI1 registers 1.90 1.80 1.40 1.20
SPI1 kernel 1.50 1.20 1.10 1.00
APB2 µA/MHz
SPI4 registers 1.80 1.60 1.40 1.10
SPI4 kernel 1.50 1.20 1.10 1.00
SPI5 registers 1.60 1.60 1.40 1.10
SPI5 kernel 1.50 1.20 1.10 1.00
TIM15 2.80 2.50 2.30 1.90
TIM16 2.00 1.90 1.60 1.30
TIM17 2.10 2.00 1.70 1.40
SAI1 registers 1.40 1.40 1.20 0.90
SAI1 kernel 0.80 0.70 0.70 0.70
DFSDM1 registers 5.60 5.40 5.30 4.00
DFSDM1 kernel 0.30 0.20 0.20 0.10
SYSCFG 1.20 1.10 1.10 1.10
142/282 DS13311 Rev 3


IDD(Typ)
Peripheral Unit
VOS0 VOS1 VOS2 VOS3
LPUART1 registers 1.80 0.90 0.80 0.60

LPUART1 kernel 2.40 2.30 2.00 1.90
SPI6 registers 2.60 2.30 2.10 1.80
SPI6 kernel 1.20 1.10 1.00 0.90
I2C4 registers 0.70 0.70 0.60 0.40
I2C4 kernel 2.00 1.70 1.70 1.40
LPTIM2 registers 1.50 0.70 0.50 0.30
LPTIM2 kernel 2.50 2.10 2.00 1.90
LPTIM3 registers 2.90 2.60 2.30 1.90
LPTIM3 kernel 2.40 2.00 1.90 1.70
APB4 LPTIM4 registers 2.60 2.30 2.10 1.80 µA/MHz
LPTIM4 kernel 2.10 1.80 1.70 1.60
LPTIM5 registers 2.60 2.30 2.00 1.70
LPTIM5 kernel 2.10 1.80 1.60 1.50
COMP1/2 0.70 0.30 0.20 0.10
VREF 0.10 0.10 0.10 0.10
RTC 0.10 0.10 0.10 0.10
WWDG1 0.60 0.50 0.50 0.50
SAI4 registers 2.40 2.20 2.10 1.70
SAI4 kernel 0.90 0.90 0.90 0.70
DTS 2.90 2.60 2.30 2.00
DS13311 Rev 3 143/282

250
6.3.9 Wakeup time from low-power modes

The wakeup times given in Table 34 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
• For Stop or Sleep modes: the wakeup event is WFE.
• WKUP (PC1) pin is used to wakeup from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD=3.3 V.
Table 34. Low-power mode wakeup timings

Max(1)
Symbol Parameter Conditions Typ(1) (2)
Unit
CPU
tWUSLEEP(3) Wakeup from Sleep - 14.00 15.00 clock
cycles
SVOS3, HSI, Flash memory in Normal mode 4.6 6.2
SVOS3, HSI, Flash memory in low-power mode 12.4 17.4
SVOS4, HSI, Flash memory in low-power mode 23.3 31.8
Wakeup from Stop SVOS5, HSI, Flash memory in low-power mode 39.1 52.7
tWUSTOP(3)
mode SVOS3, CSI, Flash memory in Normal mode 30.0 41.6
SVOS3, CSI, Flash memory in low-power mode 40.6 55.0 µs
SVOS4, CSI, Flash memory in Normal mode 41.0 55.4

SVOS4, CSI, Flash memory in low-power mode 51.5 68.8
SVOS5, CSI, Flash memory in Normal mode 67.3 89.5
SVOS5, CSI, Flash memory in low-power mode 67.2 89.5
Wakeup from
tWUSTDBY(3) - 400.0 504.3
Standby mode

2. The maximum values have been measured at -40 °C, in worst conditions.
3. The wakeup times are measured from the wakeup event to the point in which the application code reads the first
144/282 DS13311 Rev 3

6.3.10 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O.
The external clock signal has to respect the Table 55: I/O static characteristics. However,
the recommended clock input waveform is shown in Figure 22.
Table 35. High-speed external user clock characteristics(1)

fHSE_ext User external clock source frequency 4 25 50 MHz

Digital OSC_IN input high-level
VHSEH 0.7 VDD - VDD
voltage V
VHSEL Digital OSC_IN input low-level voltage VSS - 0.3 VDD
tW(HSE) OSC_IN high or low time 7 - - ns
Figure 22. High-speed external clock source AC timing diagram
VHSEH
90 %
10 %
VHSEL
tr(HSE) tf(HSE) tW(HSE) tW(HSE) t
THSE
External fHSE_ext
IL
clock source OSC_IN
STM32
ai17528b
DS13311 Rev 3 145/282

250
Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 55: I/O static characteristics. However, the
recommended clock input waveform is shown in Figure 23.
Table 36. Low-speed external user clock characteristics(1)

User external clock source

fLSE_ext - - 32.768 1000 kHz
frequency
OSC32_IN input pin high-level
VLSEH - 0.7 VDD - VDD
voltage
V
OSC32_IN input pin low-level
VLSEL - VSS - 0.3 VDD
voltage
tw(LSEH)
OSC32_IN high or low time - 250 - - ns
tw(LSEL)
Figure 23. Low-speed external clock source AC timing diagram
VLSEH
90%
10%
VLSEL
tr(LSE) tf(LSE) tW(LSE) tW(LSE) t
TLSE
External fLSE_ext
OSC32_IN IL
clock source
STM32
ai17529b
146/282 DS13311 Rev 3

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 50 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 37. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
Table 37. 4-50 MHz HSE oscillator characteristics(1)

Operating
conditions(2)
F Oscillator frequency - 4 - 50 MHz

RF Feedback resistor - - 200 - kΩ
During startup(3) - - 4
VDD=3 V, Rm=30 Ω
- 0.35 -
CL=10 pF at 4 MHz
VDD=3 V, Rm=30 Ω
- 0.40 -
CL=10 pF at 8 MHz
HSE current
IDD(HSE) VDD=3 V, Rm=30 Ω mA
consumption - 0.45 -
CL=10 pF at 16 MHz
VDD=3 V, Rm=30 Ω
- 0.65 -
CL=10 pF at 32 MHz
VDD=3 V, Rm=30 Ω
- 0.95 -
CL=10 pF at 48 MHz
Maximum critical crystal
Gmcritmax Startup - - 1.5 mA/V
gm
tSU(4) Start-up time VDD is stabilized - 2 - ms
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time.
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer.
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typical), designed for high-frequency applications, and selected to
match the requirements of the crystal or resonator (see Figure 24). CL1 and CL2 are usually
the same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. The PCB and MCU pin capacitance must be included
(10 pF can be used as a rough estimate of the combined pin and board capacitance) when
sizing CL1 and CL2.
Note: For information on selecting the crystal, refer to application note AN2867 “Oscillator design
guide for ST microcontrollers” available from the ST website www.st.com.
DS13311 Rev 3 147/282

250
Figure 24. Typical application with an 8 MHz crystal
Resonator with
integrated capacitors
CL1
OSC_IN fHSE
Bias
8 MHz RF controlled
resonator
gain
REXT(1) OSC_OU T STM32

CL2
ai17530b
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 38. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
Table 38. Low-speed external user clock characteristics(1)

Symbol Parameter Operating conditions(2) Min Typ Max Unit
F Oscillator frequency - - 32.768 - kHz

LSEDRV[1:0] = 00,
- 290 -
Low drive capability
LSEDRV[1:0] = 01,
- 390 -
LSE current Medium Low drive capability
IDD nA
consumption LSEDRV[1:0] = 10,
- 550 -
Medium high drive capability
LSEDRV[1:0] = 11,
- 900 -
High drive capability
LSEDRV[1:0] = 00,
- - 0.5
Low drive capability
LSEDRV[1:0] = 01,
- - 0.75
Maximum critical crystal Medium Low drive capability
Gmcritmax µA/V
gm LSEDRV[1:0] = 10,
- - 1.7
Medium high drive capability
LSEDRV[1:0] = 11,
- - 2.7
High drive capability
tSU(3) Startup time VDD is stabilized - 2 - s
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
3. tSU is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768k Hz oscillation is
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
148/282 DS13311 Rev 3

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 25. Typical application with a 32.768 kHz crystal

Resonator with
integrated capacitors CL1
OSC32_IN fHSE
Bias
32.768 kHz
RF controlled
resonator
gain
OSC32_OUT
STM32
CL2
ai17531c
1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.
6.3.11 Internal clock source characteristics

The parameters given in Table 39 to Table 41 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 13: General
operating conditions.
48 MHz high-speed internal RC oscillator (HSI48)
Table 39. HSI48 oscillator characteristics

VDD=3.3 V,
fHSI48 HSI48 frequency 47.5(1) 48 48.5(1) MHz
TJ=30 °C
TRIM(2) USER trimming step - - 0.175 0.250 %
USER TRIM
USER TRIMMING coverage ± 32 steps ±4.70 ±5.6 - %
COVERAGE(3)
DuCy(HSI48)(2) Duty Cycle - 45 - 55 %
Accuracy of the HSI48 oscillator over TJ=-40 to 125 °C –4.5 - 3.5

ACCHSI48_REL(3) %
temperature (factory calibrated) TJ=-40 to 140 °C –4.5 - 4
HSI48 oscillator frequency drift with VDD=3 to 3.6 V - 0.025 0.05

∆VDD(HSI48)(2)(4) %
VDD(5) (the reference is 3.3 V) VDD=1.62 V to 3.6 V - 0.05 0.1
tsu(HSI48)(2) HSI48 oscillator start-up time - - 2.1 4.0 µs
IDD(HSI48)(2) HSI48 oscillator power consumption - - 350 400 µA
Next transition jitter
NT jitter(2) - - ± 0.15 - ns
Accumulated jitter on 28 cycles(6)
Paired transition jitter
PT jitter(2) - - ± 0.25 - ns
Accumulated jitter on 56 cycles(6)
1. Guaranteed by test in production.
4. ∆fHSI = ACCHSI48_REL + ∆VDD.
DS13311 Rev 3 149/282

250
5. These values are obtained by using the formula: (Freq(3.6 V) - Freq(3.0 V)) / Freq(3.0 V) or (Freq(3.6 V) - Freq(1.62 V)) /
Freq(1.62 V).
6. Jitter measurements are performed without clock source activated in parallel.
64 MHz high-speed internal RC oscillator (HSI)
Table 40. HSI oscillator characteristics(1)

fHSI HSI frequency VDD=3.3 V, TJ=30 °C 63.7(2) 64 64.3(2) MHz

Trimming is not a multiple
- 0.24 0.32
of 32
Trimming is 128, 256 and
−5.2 −1.8 -
384
TRIM HSI user trimming step Trimming is 64, 192, 320 %

−1.4 −0.8 -
and 448
Other trimming are a
multiple of 32 (not
−0.6 −0.25 -
including multiple of 64
and 128)
DuCy(HSI) Duty cycle - 45 - 55 %
HSI oscillator frequency drift over
ΔVDD (HSI) VDD=1.62 to 3.6 V −0.12 - 0.03 %
VDD (the reference is 3.3 V)
HSI oscillator frequency drift over TJ=-20 to 105 °C −1(3) - 1(3)
ΔTEMP(HSI) temperature (the reference is %
64 MHz) TJ=−40 to TJmax °C −2(3) - 1(3)
tsu(HSI) HSI oscillator start-up time - - 1.4 2

at 1% of target frequency - 4 8 µs
tstab(HSI) HSI oscillator stabilization time
at 5% of target frequency - - 4
IDD(HSI) HSI oscillator power consumption - - 300 400 µA
1. Guaranteed by design unless otherwise specified.
150/282 DS13311 Rev 3

4 MHz low-power internal RC oscillator (CSI)
Table 41. CSI oscillator characteristics(1)

fCSI CSI frequency VDD=3.3 V, TJ=30 °C 3.96(2) 4 4.04(2) MHz

Trimming is not a
- 0.40 0.75
multiple of 16
Trimming is a multiple
−4.75 −2.75 0.75
of 32
TRIM CSI trimming step %
Other trimming values
not multiple of 16
−0.43 0.00 0.75
(excluding multiple of
32)
DuCy(CSI) Duty cycle - 45 - 55 %
CSI oscillator frequency drift over TJ = 0 to 85 °C −3.7(3) - 4.5(3)

∆TEMP (CSI) %
temperature TJ = −40 to 125 °C −11(3) - 7.5(3)
CSI oscillator frequency drift over
∆VDD (CSI) VDD = 1.62 to 3.6 V −0.06 - 0.06 %
VDD
tsu(CSI) CSI oscillator startup time - - 1 2 µs
CSI oscillator stabilization time
tstab(CSI) - - - 4 cycle
(to reach ± 3% of fCSI)
IDD(CSI) CSI oscillator power consumption - - 23 30 µA
1. Guaranteed by design, unless otherwise specified.
Low-speed internal (LSI) RC oscillator
Table 42. LSI oscillator characteristics

VDD = 3.3 V, TJ = 25 °C 31.4(1) 32 32.6(1)

TJ = –40 to 110 °C,
29.76(2) - 33.6(2)
fLSI LSI frequency VDD = 1.62 to 3.6 V kHz
TJ = –40 to 125 °C,
29.4(2) - 33.6(2)
VDD = 1.62 to 3.6 V
tsu(LSI)(3) LSI oscillator startup time - - 80 130
LSI oscillator stabilization time µs
tstab(LSI)(3) - - 120 170
(5% of final value)
IDD(LSI)(3) LSI oscillator power consumption - - 130 280 nA
DS13311 Rev 3 151/282

250
6.3.12 PLL characteristics

The parameters given in Table 43, Table 46 are derived from tests performed under
conditions.
Table 43. PLL1 characteristics (wide VCO frequency range)(1)

PLL input clock - 2 - 16 MHz

fPLL_IN
PLL input clock duty cycle - 10 - 90 %
(2)
VOS0 1.5 - 550
VOS1 1.5 - 400(2)
fPLL_P_OUT PLL multiplier output clock P
VOS2 1.5 - 300(2) MHz
VOS3 1.5 - 170(2)
fVCO_OUT PLL VCO output - 192 - 836(3)
Normal mode 15 50 150(3)
tLOCK PLL lock time Sigma-delta mode (CKIN ≥ µs
25 65 170
8 MHz)
fVCO_OUT
- 51 -
= 192 MHz
fVCO_OUT
- 19 -
= 400 MHz
Cycle-to-cycle jitter(4)
fVCO_OUT
- 10 -
= 560 MHz
fPLL_OUT = fVCO_OUT
- 9 - ps
fVCO_OUT/100 = 800 MHz
fVCO_OUT
- 38 -
= 192 MHz
fVCO_OUT
Period jitter - 8 -
= 560 MHz
fVCO_OUT
Jitter - 7 -
= 800 MHz
fVCO_OUT
- 0.15 -
= 192 MHz
Normal mode fVCO_OUT
- 0.14 -
(CKIN = 2 MHz) = 400 MHz
fVCO_OUT
- 0.16 -
= 832 MHz
Long term jitter %
fVCO_OUT
- 0.17 -
= 192 MHz
Sigma-delta
fVCO_OUT
mode (CKIN = - 0.08 -
= 500 MHz
16 MHz)
fVCO_OUT
- 0.06 -
= 836 MHz
152/282 DS13311 Rev 3

Table 43. PLL1 characteristics (wide VCO frequency range)(1) (continued)

fVCO_OUT = VDDA 530 557 670

560 MHz VCORE 1190 1285 6300
IDD(PLL) PLL power consumption µA
fVCO_OUT = VDDA 260 286 513
192 MHz VCORE 309 377 5700
2. This value must be limited to the maximum frequency due to the product limitation.
4. Integer mode only.
Table 44. PLL1 characteristics (medium VCO frequency range)(1)


fPLL_IN
VOS0 1.17 - 210
VOS1 1.17 - 210
fPLL_OUT PLL multiplier output clock P, Q, R
VOS2 1.17 - 210 MHz
VOS3 1.17 - 200
fVCO_OUT PLL VCO output - 150 - 420
Normal mode - 60(2) 100(2)
tLOCK PLL lock time µs
Sigma-delta mode forbidden
fVCO_OUT =
- 145 -
150 MHz
fVCO_OUT =
- 91 -
300 MHz
Cycle-to-cycle jitter(3) - ±ps
fVCO_OUT =
- 64 -
400 MHz
fVCO_OUT =
Jitter - 63 -
420 MHz
fVCO_OUT =
- 55 -
fPLL_OUT = 150 MHz
Period jitter ±-ps
50 MHz fVCO_OUT =
- 30 -
400 MHz
fVCO_OUT =
Long term jitter Normal mode - ±0.3 - %
400 MHz
fVCO_OUT = VDD - 440 1150

420 MHz VCORE - 530 -
I(PLL) PLL power consumption on VDD µA
150 MHz VCORE - 200 -
DS13311 Rev 3 153/282

250

Table 45. PLL2 and PLL3 characteristics (wide VCO frequency range)(1)

fPLL_IN
VOS0 1.5 - 550(2)
PLL multiplier output clock P, VOS1 1.5 - 400(2)

fPLL_OUT
Q, R VOS2 1.5 - 300(2) MHz
VOS3 1.5 - 170(2)
fVCO_OUT PLL VCO output - 192 - 960(3)
Normal mode - 50 150(3)
tLOCK PLL lock time Sigma-delta mode (fPLL_IN µs
- 58 166(3)
≥ 8 MHz)
fVCO_OUT = 192 MHz - 134 -
fVCO_OUT = 200 MHz - 134 -
Cycle-to-cycle jitter(4) ±ps
fVCO_OUT = 400 MHz - 76 -
Normal
mode fVCO_OUT =
- ±0.2 -
(fPLL_IN = 560 MHz
2 MHz)
Normal
Jitter mode fVCO_OUT =
- ±0.8 -
(fPLL_IN = 560 MHz
16 MHz)
Long term jitter %
Sigma-delta
mode fVCO_OUT =
- ±0.2 -
(fPLL_IN = 560 MHz
2 MHz)
Sigma-delta
mode fVCO_OUT =
- ±0.8 -
(fPLL_IN = 560 MHz
16 MHz)

836 MHz VCORE - 720 -
IDD(PLL)(3) PLL power consumption µA
192 MHz VCORE - 280 -
2. This value must be limited to the maximum frequency due to the product limitation.
154/282 DS13311 Rev 3


Table 46. PLL2 and PLL3 characteristics (medium VCO frequency range)(1)

fPLL_IN
VOS0 1.17 - 210 MHz
PLL multiplier output clock VOS1 1.17 - 210 -

fPLL_OUT
P, Q, R VOS2 1.17 - 210 -
VOS3 1.17 - 200 -
fVCO_OUT PLL VCO output - 150 - 420 -
Normal mode - 60 100(2)
tLOCK PLL lock time µs
Sigma-delta mode forbidden
fVCO_OUT = 150 MHz - 145 -
Cycle-to-cycle jitter(3) ±ps
Jitter
fPLL_OUT = fVCO_OUT =
- 55 -
Period jitter 50 MHz 150 MHz ±ps
fVCO_OUT =
Long term jitter Normal mode - ±0.3 - %
400 MHz

420 MHz VCORE - 530 -
PLL power consumption on
IDD(PLL) µA
VDD VDD - 180 500
fVCO_OUT =
150 MHz VCORE - 200 -
DS13311 Rev 3 155/282

250
6.3.13 Memory characteristics

Flash memory
The characteristics are given at TJ = –40 to 125 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 47. Flash memory characteristics

Write / Erase 8-bit mode - 6.5 -

Write / Erase 16-bit mode - 11.5 -
IDD Supply current mA
Write / Erase 32-bit mode - 20 -
Write / Erase 64-bit mode - 35 -
Table 48. Flash memory programming

Symbol Parameter Conditions Min(1) Typ Max(1) Unit
Program/erase parallelism x 8 - 290 580(2)
Word (266 bits) programming Program/erase parallelism x 16 - 180 360

tprog µs
time Program/erase parallelism x 32 - 130 260
Program/erase parallelism x 64 - 100 200
tERASE Sector (128 Kbytes) erase time Program/erase parallelism x 16 - 1.8 3.6
Program/erase parallelism x 32 -
Program/erase parallelism x 8 - 3 26 s
tME Mass erase time (1 Mbyte)
Program parallelism x 8
Program parallelism x 16 1.62 - 3.6
Vprog Programming voltage V
Program parallelism x 32
Program parallelism x 64 1.8 - 3.6
2. The maximum programming time is measured after 10K erase operations.
Table 49. Flash memory endurance and data retention

Symbol Parameter Conditions Min(1) Unit
NEND Endurance TJ = –40 to +125 °C 10 kcycles

Data retention 1 kcycle at TA = 85 °C 30
tRET Years
10 kcycles at TA = 55 °C 20
156/282 DS13311 Rev 3

6.3.14 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 50. They are based on the EMS levels and classes
defined in application note AN1709 “EMC design guide for STM8, STM32 and Legacy
MCUs ”.
Table 50. EMS characteristics

Level/
Class
VDD = 3.3 V, TA = 25 °C,

Voltage limits to be applied on any I/O pin to induce
VFESD LQFP176, conforming to 3B
a functional disturbance
IEC 61000-4-2
Fast transient voltage burst limits to be applied VDD = 3.3 V, TA = 25 °C,
VFTB through 100 pF on VDD and VSS pins to induce a LQFP176, conforming to 5A
functional disturbance IEC 61000-4-4
As a consequence, it is recommended to add a serial resistor (1 kΏ) located as close as

possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm
on PCB).
Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)
DS13311 Rev 3 157/282

250
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015 “Software
techniques for improving microcontrollers EMC performance”).
Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
Table 51. EMI characteristics

Max vs.
Monitored [fHSE/fCPU]
Symbol Parameter Conditions Unit
frequency band
8/550 MHz
0.1 to 30 MHz 14
30 to 130 MHz 20
VDD = 3.6 V, TA = 25 °C, LQFP176 package, dBµV
SEMI Peak level 130 MHz to 1 GHz 27
conforming to IEC61967-2
1 GHz to 2 GHz 17
EMI Level 4 -
6.3.15 Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each
sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC
JS-001 and ANSI/ESDA/JEDEC JS-002 standards.
Table 52. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Packages Class Unit
value(1)
Electrostatic discharge TA = 25 °C conforming to

VESD(HBM) All packages 1C 1000(2)
voltage (human body model) ANSI/ESDA/JEDEC JS-001
All LQFP
Electrostatic discharge C1 250 V
TA = +25 °C conforming to packages
VESD(CDM) voltage (charge device
ANSI/ESDA/JEDEC JS-002 All BGA and
model) C2a 500
WLCSP packages
158/282 DS13311 Rev 3

2. Excluding VFBSMPS,the maximum value is 2000 V.
Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with JESD78 IC latchup standard.
Table 53. Electrical sensitivities

Symbol Parameter Conditions Class
Conforming to JESD78,
LU Static latchup class II level A
TJ = TJMax
6.3.16 I/O current injection characteristics

As a general rule, a current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during the normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when an abnormal injection accidentally happens, susceptibility
tests are performed on a sample basis during the device characterization.
Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency
deviation).
The following tables are the compilation of the SIC1/SIC2 and functional ESD results.
Negative induced A negative induced leakage current is caused by negative injection and
positive induced leakage current by positive injection.
Table 54. I/O current injection susceptibility(1)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection
PA12, PE8 5 0
PC4, PE12, PF15, PH0 0 NA
IINJ PA0, PA0_C, PA1, PA1_C, PC2, PC2_C, PC3, PC3_C, PA4, mA
0 0
PA5, PE7, PG1, PH4, PH5, BOOT0
All other I/Os 5 NA
DS13311 Rev 3 159/282

250
6.3.17 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 55: I/O static characteristics are
derived from tests performed under the conditions summarized in Table 13: General
operating conditions. All I/Os are CMOS and TTL compliant (except for BOOT0).
Note: For information on GPIO configuration, refer to application note AN4899 “STM32 GPIO
configuration for hardware settings and low-power consumption”, available from the ST
website www.st.com.
Table 55. I/O static characteristics

Symbol Parameter Condition Min Typ Max Unit
I/O input low level voltage

- - 0.3VDD(1)
except BOOT0
I/O input low level voltage 0.4VDD−0.1
VIL 1.62 V<VDD<3.6 V - - (2) V
except BOOT0
BOOT0 I/O input low level 0.19VDD+0.1
- - (2)
voltage
I/O input high level voltage
0.7VDD(1) - -
except BOOT0
I/O input high level voltage 0.47VDD+
VIH 1.62 V<VDD<3.6 V - - V
except BOOT0 0.25(2)
BOOT0 I/O input high level 0.17VDD+
- -
voltage 0.6(2)
TT_xx, FT_xxx and NRST I/O
- 250 -
VHYS (2) input hysteresis 1.62 V< VDD <3.6 V mV
BOOT0 I/O input hysteresis - 200 -
0< VIN ≤ Max(VDDXXX)(8) - - +/-250
(2)
FT_xx Input leakage current Max(VDDXXX) < VIN ≤ 5.5 V
(4)(5)(8) - - 1500
0< VIN ≤ Max(VDDXXX)(8) - - +/- 350

Ilkg(3) FT_u IO Max(VDDXXX) < VIN ≤ 5.5 V nA
(4)(5)(8) - - 5000(6)
TT_xx Input leakage current 0< VIN ≤ Max(VDDXXX) (8) - - +/-250
VPP (BOOT0 alternate 0< VIN ≤ VDD - - 15

function) VDD < VIN ≤ 9 V 35
Weak pull-up equivalent
RPU VIN=VSS 30 40 50
resistor(7)
kΩ
Weak pull-down equivalent
RPD VIN=VDD(8) 30 40 50
resistor(7)
CIO I/O pin capacitance - - 5 - pF
160/282 DS13311 Rev 3

1. Compliant with CMOS requirements.

3. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following
formula: ITotal_Ieak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max).
4. All FT_xx IO except FT_lu, FT_u and PC3.
5. VIN must be less than Max(VDDXXX) + 3.6 V.
6. To sustain a voltage higher than MIN(VDD, VDDA, VDD33USB) +0.3 V, the internal pull-up and pull-down resistors must be
disabled.
7. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
8. Max(VDDXXX) is the maximum value of all the I/O supplies.
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements for FT I/Os is shown in Figure 26.
Figure 26. VIL/VIH for all I/Os except BOOT0
2.5
TLL requirement: VIHmin = 2 V

2 V DD
=0.7
nt: V IHmin
uireme
S req +0.25
CMO 0.47VDD
VIHmin=
n sim ulation
1.5 Based o
Voltage
-0.1
0.4VDD
VILmax=
n s im ulation V
1 o .3
Based =0 DD
ment: VIL
max
require
CMOS
TLL requirement: VILmin = 0.8 V
0.5
0
1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6
MSv46121V3
DS13311 Rev 3 161/282

250
Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ±20 mA (with a relaxed VOL/VOH).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2. In particular:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 11).
• The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
ΣIVSS (see Table 11).
162/282 DS13311 Rev 3

Output voltage levels

Unless otherwise specified, the parameters given in Table 56: Output voltage characteristics
for all I/Os except PC13, PC14 and PC15 and Table 57: Output voltage characteristics for
PC13, PC14 and PC15 are derived from tests performed under ambient temperature and
VDD supply voltage conditions summarized in Table 13: General operating conditions. All
I/Os are CMOS and TTL compliant.
Table 56. Output voltage characteristics for all I/Os except PC13, PC14 and PC15(1)
Symbol Parameter Conditions(3) Min Max Unit
CMOS port(2)
VOL Output low level voltage IIO = 8 mA - 0.4
2.7 V≤ VDD ≤3.6 V
CMOS port(2)
VOH Output high level voltage IIO = −8 mA VDD−0.4 -
2.7 V≤ VDD ≤3.6 V
TTL port(2)
VOL(3) Output low level voltage IIO = 8 mA - 0.4
2.7 V≤ VDD ≤3.6 V
TTL port(2)
VOH (3) Output high level voltage IIO = −8 mA 2.4 -
2.7 V≤ VDD ≤3.6 V
V
IIO = 20 mA
VOL(3) Output low level voltage - 1.3
2.7 V≤ VDD ≤3.6 V
IIO = −20 mA
VOH(3) Output high level voltage VDD−1.3 -
2.7 V≤ VDD ≤3.6 V
IIO = 4 mA
1.62 V≤ VDD ≤3.6 V
IIO = −4 mA
VOH (3) Output high level voltage VDD−-0.4 -
1.62 V≤VDD<3.6 V
IIO = 20 mA
- 0.4
Output low level voltage for an FTf 2.3 V≤ VDD≤3.6 V
VOLFM+(3)
I/O pin in FM+ mode IIO = 10 mA
- 0.4
1.62 V≤ VDD ≤3.6 V
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 10:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
DS13311 Rev 3 163/282

250
Table 57. Output voltage characteristics for PC13, PC14 and PC15(1)
CMOS port(2)
VOL Output low level voltage IIO = 3 mA - 0.4
2.7 V≤ VDD ≤3.6 V
CMOS port(2)
VOH Output high level voltage IIO = −3 mA VDD−0.4 -
2.7 V≤ VDD ≤3.6 V
TTL port(2)
VOL(3) Output low level voltage IIO = 3 mA - 0.4
V
2.7 V≤ VDD ≤3.6 V
TTL port(2)
VOH (2)
Output high level voltage IIO = −3 mA 2.4 -
2.7 V≤ VDD ≤3.6 V
IIO = 1.5 mA
1.62 V≤ VDD ≤3.6 V
IIO = −1.5 mA
VOH(2) Output high level voltage VDD−0.4 -
1.62 V≤ VDD ≤3.6 V
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 10:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
164/282 DS13311 Rev 3

Output buffer timing characteristics (HSLV option disabled)

The HSLV bit of SYSCFG_CCCSR register can be used to optimize the I/O speed when the
product voltage is below 2.7 V.
Table 58. Output timing characteristics (HSLV OFF)(1)

Speed Symbol Parameter conditions Min Max Unit
C=50 pF, 2.7 V≤ VDD≤3.6 V - 12

C=50 pF, 1.62 V≤VDD≤2.7 V - 3
C=30 pF, 2.7 V≤VDD≤3.6 V - 12
Fmax(2) Maximum frequency MHz
C=30 pF, 1.62 V≤VDD≤2.7 V - 3
C=10 pF, 2.7 V≤VDD≤3.6 V - 16
C=10 pF, 1.62 V≤VDD≤2.7 V - 4
00
C=50 pF, 2.7 V≤ VDD≤3.6 V - 16.6
C=50 pF, 1.62 V≤VDD≤2.7 V - 33.3
Output high to low level C=30 pF, 2.7 V≤VDD≤3.6 V - 13.3
tr/tf(3) fall time and output low ns
to high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V - 25
C=10 pF, 2.7 V≤VDD≤3.6 V - 10
C=10 pF, 1.62 V≤VDD≤2.7 V - 20
C=50 pF, 2.7 V≤ VDD≤3.6 V - 60
C=50 pF, 1.62 V≤VDD≤2.7 V - 15
C=30 pF, 2.7 V≤VDD≤3.6 V - 80
C=30 pF, 1.62 V≤VDD≤2.7 V - 15
C=10 pF, 2.7 V≤VDD≤3.6 V - 110
C=10 pF, 1.62 V≤VDD≤2.7 V - 20
01
C=50 pF, 2.7 V≤ VDD≤3.6 V - 5.2
C=50 pF, 1.62 V≤VDD≤2.7 V - 10
Output high to low level C=30 pF, 2.7 V≤VDD≤3.6 V - 4.2
to high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V - 7.5
C=10 pF, 2.7 V≤VDD≤3.6 V - 2.8
C=10 pF, 1.62 V≤VDD≤2.7 V - 5.2
DS13311 Rev 3 165/282

250
Table 58. Output timing characteristics (HSLV OFF)(1) (continued)

C=50 pF, 2.7 V≤VDD≤3.6 V (4)

- 85
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 35
(4)
C=30 pF, 2.7 V≤VDD≤3.6 V - 110
(4)
C=30 pF, 1.62 V≤VDD≤2.7 V - 40
C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 166
C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 100
10
(4)
C=50 pF, 2.7 V≤VDD≤3.6 V - 3.8
(4)
C=50 pF, 1.62 V≤VDD≤2.7 V - 6.9
Output high to low level C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 2.8
to high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 5.2
C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 1.8
C=10 pF, 1.62 V≤VDD≤2.7 Vv - 3.3
C=50 pF, 2.7 V≤VDD≤3.6 Vv - 100
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 50
C=30 pF, 2.7 V≤VDD≤3.6 Vv - 133
C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 66
C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 220
C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 85
11
C=50 pF, 2.7 V≤VDD≤3.6 V(4) - 3.3
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 6.6
Output high to low level C=30 pF, 2.7 V≤VDD≤3.6 V(4) - 2.4
to high level rise time C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 4.5
C=10 pF, 2.7 V≤VDD≤3.6 V(4) - 1.5
C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 2.7
2. The maximum frequency is defined with the following conditions:
(tr+tf) ≤ 2/3 T
Skew ≤ 1/20 T
45%<Duty cycle<55%
3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively.
4. Compensation system enabled.
166/282 DS13311 Rev 3

Output buffer timing characteristics (HSLV option enabled)
Table 59. Output timing characteristics (HSLV ON)(1)

C=50 pF, 1.62 V≤VDD≤2.7 V - 10

(2)
Fmax Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V - 10 MHz
C=10 pF, 1.62 V≤VDD≤2.7 V - 10
00
C=50 pF, 1.62 V≤VDD≤2.7 V - 11
Output high to low level
tr/tf(3) fall time and output low C=30 pF, 1.62 V≤VDD≤2.7 V - 9 ns
to high level rise time
C=10 pF, 1.62 V≤VDD≤2.7 V - 6.6
C=50 pF, 1.62 V≤VDD≤2.7 V - 50
(2)
Fmax Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V - 58 MHz
C=10 pF, 1.62 V≤VDD≤2.7 V - 66
01
C=50 pF, 1.62 V≤VDD≤2.7 V - 6.6
tr/tf(3) fall time and output low C=30 pF, 1.62 V≤VDD≤2.7 V - 4.8 ns
C=10 pF, 1.62 V≤VDD≤2.7 V - 3
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 55
Fmax (2) Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 80 MHz
C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 133
10
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 5.8
tr/tf(3) fall time and output low C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 4 ns
C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 2.4
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 60
Fmax (2) Maximum frequency C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 90 MHz
C=10 pF, 1.62 V≤VDD≤2.7 V(4) - 175
11
C=50 pF, 1.62 V≤VDD≤2.7 V(4) - 5.3
tr/tf(3) fall time and output low C=30 pF, 1.62 V≤VDD≤2.7 V(4) - 3.6 ns
to high level rise time (4)
C=10 pF, 1.62 V≤VDD≤2.7 V - 1.9
2. The maximum frequency is defined with the following conditions:
(tr+tf) ≤ 2/3 T
Skew ≤ 1/20 T
45%<Duty cycle<55%
3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively.
4. Compensation system enabled.
DS13311 Rev 3 167/282

250
Analog switch between ports Pxy_C and Pxy

PA0_C, PA1_C, PC2_C and PC3_C can be connected internally to PA0, PA1, PC2 and
PC3, respectively (refer to SYSCFG_PMCR register in RM0468 reference manual). The
switch is controlled by VDDSWITCH voltage level. It is defined through BOOSTVDDSEL bit of
SYSCFG_PMCR. If the switch is closed the switch characteristics are given in the table
below.
Table 60. Pxy_C and Pxy analog switch characteristics

Parameter Conditions Min Typ Max Unit
Switch control boosted - - 315

VDDSWITCH > 2.7 V - - 315
Switch VDDSWITCH > 2.4 V - - 335

Switch control Ω
impedance VDDSWITCH > 2.0 V - - 390
not boosted
VDDSWITCH > 1.8 V - - 445
VDDSWITCH > 1.62 V - - 550
6.3.18 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 55: I/O static characteristics).
Unless otherwise specified, the parameters given in Table 61 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 13: General operating conditions.
Table 61. NRST pin characteristics

Weak pull-up equivalent

RPU(2) VIN = VSS 30 40 50 ㏀
resistor(1)
VF(NRST)(2) NRST Input filtered pulse 1.71 V < VDD < 3.6 V - - 50
1.71 V < VDD < 3.6 V 350 - - ns
VNF(NRST)(2) NRST Input not filtered pulse
1.62 V < VDD < 3.6 V 1000 - -
1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution
to the series resistance must be minimum (~10% order).
168/282 DS13311 Rev 3

Figure 27. Recommended NRST pin protection
VDD
External
reset circuit (1)
RPU
NRST (2) Internal Reset
Filter
0.1 μF
STM32
ai14132d
1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 55. Otherwise the reset is not taken into account by the device.
6.3.19 FMC characteristics

Unless otherwise specified, the parameters given in Table 62 to Table 75 for the FMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 13: General operating conditions,
with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Measurement points are done at CMOS levels: 0.5VDD
• IO Compensation cell activated.
• HSLV activated when VDD ≤ 2.7 V
• VOS level set to VOS0.
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate
function characteristics.
Asynchronous waveforms and timings

Figure 28 through Figure 30 represent asynchronous waveforms and Table 62 through
Table 69 provide the corresponding timings. The results shown in these tables are obtained
with the following FMC configuration:
• AddressSetupTime = 0x1
• AddressHoldTime = 0x1
• DataSetupTime = 0x1 (except for asynchronous NWAIT mode , DataSetupTime = 0x5)
• BusTurnAroundDuration = 0x0
• Capacitive load CL = 30 pF
In all timing tables, the TKERCK is the fmc_ker_ck clock period.
DS13311 Rev 3 169/282

250
Figure 28. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms
tw(NE)
FMC_NE
tv(NOE_NE) t w(NOE) t h(NE_NOE)
FMC_NOE
FMC_NWE
tv(A_NE) t h(A_NOE)
FMC_A[25:0] Address
tv(BL_NE) t h(BL_NOE)
FMC_NBL[1:0]
t h(Data_NE)
t su(Data_NOE) th(Data_NOE)
t su(Data_NE)
FMC_D[15:0] Data
t v(NADV_NE)
tw(NADV)
FMC_NADV (1)
FMC_NWAIT
th(NE_NWAIT)
tsu(NWAIT_NE)
MS32753V1
1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.
170/282 DS13311 Rev 3

Table 62. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)

tw(NE) FMC_NE low time 3Tfmc_ker_ck–1 3Tfmc_ker_ck+1

tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 0.5
tw(NOE) FMC_NOE low time 2Tfmc_ker_ck –1 2Tfmc_ker_ck+1
FMC_NOE high to FMC_NE high
th(NE_NOE) Tfmc_ker_ck -
hold time
tv(A_NE) FMC_NEx low to FMC_A valid - 0.5
Address hold time after
th(A_NOE) 2Tfmc_ker_ck -
FMC_NOE high
Data to FMC_NEx high setup ns
tsu(Data_NE) Tfmc_ker_ck+14 -
time
Data to FMC_NOEx high setup
tsu(Data_NOE) 13 -
time
Data hold time after FMC_NOE
th(Data_NOE) 0 -
high
Data hold time after FMC_NEx
th(Data_NE) 0 -
high
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 4
tw(NADV) FMC_NADV low time - Tfmc_ker_ck+1
Table 63. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT

timings(1)(2)
tw(NE) FMC_NE low time 7Tfmc_ker_ck–1 7Tfmc_ker_ck+1

tw(NOE) FMC_NOE low time 5Tfmc_ker_ck–1 5Tfmc_ker_ck +1
tw(NWAIT) FMC_NWAIT low time Tfmc_ker_ck– 0.5 -
ns
FMC_NWAIT valid before FMC_NEx
tsu(NWAIT_NE) 4Tfmc_ker_ck +9 -
high
FMC_NEx hold time after
th(NE_NWAIT) 3Tfmc_ker_ck+12 -
FMC_NWAIT invalid
2. NWAIT pulse width is equal to 1 fmc_ker_ck cycle.
DS13311 Rev 3 171/282

250
Figure 29. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

tw(NE)
FMC_NEx
FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)
FMC_NWE
tv(A_NE) th(A_NWE)
FMC_A[25:0] Address
tv(BL_NE) th(BL_NWE)
FMC_NBL[1:0] NBL
tv(Data_NE) th(Data_NWE)
FMC_D[15:0] Data
t v(NADV_NE)
tw(NADV)
FMC_NADV (1)
FMC_NWAIT
th(NE_NWAIT)
tsu(NWAIT_NE)
MS32754V1
1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.
172/282 DS13311 Rev 3

Table 64. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)

tw(NE) FMC_NE low time 3Tfmc_ker_ck –1 3Tfmc_ker_ck + 1

tv(NWE_NE) FMC_NEx low to FMC_NWE low Tfmc_ker_ck–1 Tfmc_ker_ck
tw(NWE) FMC_NWE low time Tfmc_ker_ck –0.5 Tfmc_ker_ck+0.5
FMC_NWE high to FMC_NE high
th(NE_NWE) Tfmc_ker_ck -
hold time
tv(A_NE) FMC_NEx low to FMC_A valid - 1
Address hold time after FMC_NWE
th(A_NWE) Tfmc_ker_ck –0.5 -
high ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 0.5
FMC_BL hold time after FMC_NWE
th(BL_NWE) Tfmc_ker_ck –0.5 -
high
tv(Data_NE) Data to FMC_NEx low to Data valid - Tfmc_ker_ck+ 2
th(Data_NWE) Data hold time after FMC_NWE high Tfmc_ker_ck -
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 5
tw(NADV) FMC_NADV low time - Tfmc_ker_ck+ 1
Table 65. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT

timings(1)(2)
tw(NE) FMC_NE low time 8Tfmc_ker_ck –1 8Tfmc_ker_ck+1

tw(NWE) FMC_NWE low time 6Tfmc_ker_ck –1 6Tfmc_ker_ck+1
FMC_NWAIT valid before FMC_NEx ns
tsu(NWAIT_NE) 5Tfmc_ker_ck+13 -
high
th(NE_NWAIT) 4Tfmc_ker_ck+12 -
FMC_NWAIT invalid
DS13311 Rev 3 173/282

250
Figure 30. Asynchronous multiplexed PSRAM/NOR read waveforms

tw(NE)
FMC_ NE
tv(NOE_NE) t h(NE_NOE)
FMC_NOE
t w(NOE)
FMC_NWE
tv(A_NE) th(A_NOE)
FMC_ A[25:16] Address

tv(BL_NE) th(BL_NOE)
FMC_ NBL[1:0] NBL

th(Data_NE)
tsu(Data_NE)
t v(A_NE) tsu(Data_NOE) th(Data_NOE)
FMC_ AD[15:0] Address Data
t v(NADV_NE) th(AD_NADV)
tw(NADV)
FMC_NADV
FMC_NWAIT
th(NE_NWAIT)
tsu(NWAIT_NE)
MS32755V1
174/282 DS13311 Rev 3

Table 66. Asynchronous multiplexed PSRAM/NOR read timings(1)

tw(NE) FMC_NE low time 4Tfmc_ker_ck –1 4Tfmc_ker_ck +1

2Tfmc_ker_ck
tv(NOE_NE) FMC_NEx low to FMC_NOE low 2Tfmc_ker_ck
+0.5
ttw(NOE) FMC_NOE low time Tfmc_ker_ck –1 Tfmc_ker_ck+1
FMC_NOE high to FMC_NE high hold
th(NE_NOE) Tfmc_ker_ck -
time
tv(A_NE) FMC_NEx low to FMC_A valid - 0.5
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 4.0
tw(NADV) FMC_NADV low time Tfmc_ker_ck –0.5 Tfmc_ker_ck +1 ns
FMC_AD(address) valid hold time
th(AD_NADV) Tfmc_ker_ckk –4 -
after FMC_NADV high)
Address hold time after FMC_NOE
th(A_NOE) Tfmc_ker_ck –0.5 -
high
tsu(Data_NE) Data to FMC_NEx high setup time Tfmc_ker_ck +14 -
tsu(Data_NOE) Data to FMC_NOE high setup time 13 -
th(Data_NE) Data hold time after FMC_NEx high 0 -
th(Data_NOE) Data hold time after FMC_NOE high 0 -
Table 67. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)

tw(NE) FMC_NE low time 8Tfmc_ker_ck –1 8Tfmc_ker_ck +1

tw(NOE) FMC_NWE low time 5Tfmc_ker_ck –1 5Tfmc_ker_ck +1
FMC_NWAIT valid before ns
FMC_NEx high
th(NE_NWAIT) 3Tfmc_ker_ck +12 -
FMC_NWAIT invalid
DS13311 Rev 3 175/282

250
Table 68. Asynchronous multiplexed PSRAM/NOR write timings(1)

tw(NE) FMC_NE low time 4Tfmc_ker_ck –1 4Tfmc_ker_ck

tv(NWE_NE) FMC_NEx low to FMC_NWE low Tfmc_ker_ck –1 Tfmc_ker_ck +0.5
tw(NWE) FMC_NWE low time 2Tfmc_ker_ck –0.5 2Tfmc_ker_ck +0.5
FMC_NWE high to FMC_NE high hold
th(NE_NWE) Tfmc_ker_ck –0.5 -
time
tv(A_NE) FMC_NEx low to FMC_A valid - 1
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 5.0
tw(NADV) FMC_NADV low time Tfmc_ker_ck –0.5 Tfmc_ker_ck + 1
ns
FMC_AD(adress) valid hold time after
th(AD_NADV) Tfmc_ker_ck –4.5 -
FMC_NADV high)
Address hold time after FMC_NWE
th(A_NWE) Tfmc_ker_ck – 0.5 -
high
FMC_BL hold time after FMC_NWE
th(BL_NWE) Tfmc_ker_ck – 0.5 -
high
tv(BL_NE) FMC_NEx low to FMC_BL valid - 0.5
tv(Data_NADV) FMC_NADV high to Data valid - Tfmc_ker_ck +2
th(Data_NWE) Data hold time after FMC_NWE high Tfmc_ker_ck -
Table 69. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2)

tw(NE) FMC_NE low time 9Tfmc_ker_ck –1 9Tfmc_ker_ck

tw(NWE) FMC_NWE low time 7Tfmc_ker_ck –0.5 7Tfmc_ker_ck +0.5
FMC_NWAIT valid before FMC_NEx ns
high
th(NE_NWAIT) 4Tfmc_ker_ck +12 -
FMC_NWAIT invalid
176/282 DS13311 Rev 3

Synchronous waveforms and timings

Figure 31 through Figure 34 represent synchronous waveforms and Table 70 through
Table 73 provide the corresponding timings. The results shown in these tables are obtained
with the following FMC configuration:
• BurstAccessMode = FMC_BurstAccessMode_Enable
• MemoryType = FMC_MemoryType_CRAM
• WriteBurst = FMC_WriteBurst_Enable
• CLKDivision = 1
• DataLatency = 1 for NOR Flash, DataLatency = 0 for PSRAM, CL = 30 pF
In all the timing tables, the Tfmc_ker_ck is the fmc_ker_ck clock period, with the following
FMC_CLK maximum values:
• For 2.7 V<VDD<3.6 V: maximum FMC_CLK = 137 MHz at CL = 20 pF
• For 1.8 V<VDD<1.9 V: maximum FMC_CLK = 100 MHz at CL = 20 pF
• For 1.62 V<VDD<1.8 V: maximumFMC_CLK = 88 MHz at CL = 15 pF
Figure 31. Synchronous multiplexed NOR/PSRAM read timings
tw(CLK) tw(CLK) BUSTURN = 0
FMC_CLK
Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)
FMC_NEx
t d(CLKL-NADVL) td(CLKL-NADVH)
FMC_NADV
td(CLKL-AV) td(CLKH-AIV)
FMC_A[25:16]
td(CLKL-NOEL) td(CLKH-NOEH)
FMC_NOE
td(CLKL-ADIV) th(CLKH-ADV)
t d(CLKL-ADV) tsu(ADV-CLKH) tsu(ADV-CLKH) th(CLKH-ADV)
FMC_AD[15:0] AD[15:0] D1 D2
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) th(CLKH-NWAITV)
MS32757V1
DS13311 Rev 3 177/282

250
Table 70. Synchronous multiplexed NOR/PSRAM read timings(1)

tw(CLK) FMC_CLK period 2Tfmc_ker_ck –0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 3
td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0…2) Tfmc_ker_ck+1.5 -
FMC_CLK low to 1.62 V <VDD < 3.6 V 5.5

td(CLKL-NADVL) -
FMC_NADV low 2.7 V <VDD < 3.6 V 2
FMC_CLK low to 1.62 V <VDD < 3.6 V -

td(CLKL-NADVH) 1
FMC_NADV high 2.7 V <VDD < 3.6 V -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 3
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) Tfmc_ker_ck -
ns
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 2.5
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high Tfmc_ker_ck +1 -
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -
tsu(ADV-CLKH) FMC_A/D[15:0] valid data before FMC_CLK high 3 -
th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 0 -
tsu(NWAIT-
FMC_NWAIT valid before FMC_CLK high 3 -
CLKH)
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 2.5 -

178/282 DS13311 Rev 3

Figure 32. Synchronous multiplexed PSRAM write timings
tw(CLK) tw(CLK) BUSTURN = 0
FMC_CLK
Data latency = 0
FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)
FMC_NADV
FMC_A[25:16]
td(CLKL-NWEL) td(CLKH-NWEH)
FMC_NWE
td(CLKL-ADIV) td(CLKL-Data)
td(CLKL-ADV) td(CLKL-Data)
FMC_AD[15:0] AD[15:0] D1 D2
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) th(CLKH-NWAITV)
td(CLKH-NBLH)
FMC_NBL
MS32758V1
DS13311 Rev 3 179/282

250
Table 71. Synchronous multiplexed PSRAM write timings(1)

tw(CLK) FMC_CLK period, VDD = 2.7 to 3.6 V 2Tfmc_ker_ck –0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x =0..2) - 3
FMC_CLK high to FMC_NEx high
td(CLKH-NExH) Tfmc_ker_ck +1.5 -
(x = 0…2)

td(CLKL-NADVL) -
FMC_NADV low 2.7 V <VDD < 3.6 V 2.0

td(CLKL-NADVH) 1
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x =16…25) - 3
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x =16…25) Tfmc_ker_ck - ns
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 2.5
t(CLKH-NWEH) FMC_CLK high to FMC_NWE high Tfmc_ker_ck +1 -
td(CLKL-ADV) FMC_CLK low to to FMC_AD[15:0] valid - 2.5
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -
td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 3.5
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low - 2
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high Tfmc_ker_ck +0.5 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 3 -
180/282 DS13311 Rev 3

Figure 33. Synchronous non-multiplexed NOR/PSRAM read timings
tw(CLK) tw(CLK)
FMC_CLK
Data latency = 0
FMC_NEx
FMC_NADV
FMC_A[25:0]
td(CLKL-NOEL) td(CLKH-NOEH)
FMC_NOE
tsu(DV-CLKH) th(CLKH-DV)
tsu(DV-CLKH) th(CLKH-DV)
FMC_D[15:0] D1 D2
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) t h(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b)
MS32759V1
DS13311 Rev 3 181/282

250
Table 72. Synchronous non-multiplexed NOR/PSRAM read timings(1)

tw(CLK) FMC_CLK period 2Tfmc_ker_ck –0.5 -

t(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 3
td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) Tfmc_ker_ck+1.5 -

td(CLKL-NADVL) -
FMC_NADV low 2.7 V <VDD < 3.6 V 2.0

td(CLKL-NADVH) 1
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 3 ns
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) Tfmc_ker_ck -
td(CLKL-NOEL) FMC_CLK ow to FMC_NOE low - 2.5
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high Tfmc_ker_ck+1 -
tsu(DV-CLKH) FMC_D[15:0] valid data before FMC_CLK high 3 -
th(CLKH-DV) FMC_D[15:0] valid data after FMC_CLK high 0 -
t(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 3 -
182/282 DS13311 Rev 3

Figure 34. Synchronous non-multiplexed PSRAM write timings

tw(CLK) tw(CLK)
FMC_CLK
Data latency = 0
FMC_NEx
FMC_NADV
FMC_A[25:0]
td(CLKL-NWEL) td(CLKH-NWEH)
FMC_NWE
td(CLKL-Data) td(CLKL-Data)
FMC_D[15:0] D1 D2
FMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b) tsu(NWAITV-CLKH) td(CLKH-NBLH)
th(CLKH-NWAITV)
FMC_NBL
MS32760V1
DS13311 Rev 3 183/282

250
Table 73. Synchronous non-multiplexed PSRAM write timings(1)

t(CLK) FMC_CLK period 2Tfmc_ker_ck –0.5 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 3
t(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) Tfmc_ker_ck+1.5 -

td(CLKL-NADVL) -
FMC_NADV low 2.7 V <VDD < 3.6 V 2

td(CLKL-NADVH) 1
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 3
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) Tfmc_ker_ck - ns
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 2.5

td(CLKH-NWEH) FMC_CLK high to FMC_NWE high Tfmc_ker_ck+1 -
td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 3.5
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low - 2
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high Tfmc_ker_ck+0.5 -
tsu(NWAIT-
FMC_NWAIT valid before FMC_CLK high 3 -
CLKH)

184/282 DS13311 Rev 3

NAND controller waveforms and timings

Figure 35 through Figure 38 represent synchronous waveforms, and Table 74 and Table 75
provide the corresponding timings. The results shown in this table are obtained with the
following FMC configuration and a capacitive load (CL) of 30 pF:
• COM.FMC_SetupTime = 0x01
• COM.FMC_WaitSetupTime = 0x03
• COM.FMC_HoldSetupTime = 0x02
• COM.FMC_HiZSetupTime = 0x01
• ATT.FMC_SetupTime = 0x01
• ATT.FMC_WaitSetupTime = 0x03
• ATT.FMC_HoldSetupTime = 0x02
• ATT.FMC_HiZSetupTime = 0x01
• Bank = FMC_Bank_NAND
• MemoryDataWidth = FMC_MemoryDataWidth_16b
• ECC = FMC_ECC_Enable
• ECCPageSize = FMC_ECCPageSize_512Bytes
• TCLRSetupTime = 0
• TARSetupTime = 0
In all timing tables, the Tfmc_ker_ck is the fmc_ker_ck clock period.
Figure 35. NAND controller waveforms for read access
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
FMC_NWE
td(ALE-NOE) th(NOE-ALE)
FMC_NOE (NRE)
tsu(D-NOE) th(NOE-D)
FMC_D[15:0]
MS32767V1
DS13311 Rev 3 185/282

250
Figure 36. NAND controller waveforms for write access
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NWE) th(NWE-ALE)
FMC_NWE
FMC_NOE (NRE)
tv(NWE-D) th(NWE-D)
FMC_D[15:0]
MS32768V1
Figure 37. NAND controller waveforms for common memory read access
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NOE) th(NOE-ALE)
FMC_NWE
tw(NOE)
FMC_NOE
tsu(D-NOE) th(NOE-D)
FMC_D[15:0]
MS32769V1
186/282 DS13311 Rev 3

Figure 38. NAND controller waveforms for common memory write access
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NOE) tw(NWE) th(NOE-ALE)
FMC_NWE
FMC_N OE
td(D-NWE)
tv(NWE-D) th(NWE-D)
FMC_D[15:0]
MS32770V1
Table 74. Switching characteristics for NAND Flash read cycles(1)

tw(N0E) FMC_NOE low width 4Tfmc_ker_ck – 0.5 4Tfmc_ker_ck+0.5

FMC_D[15-0] valid data before
tsu(D-NOE) 11 -
FMC_NOE high
FMC_D[15-0] valid data after ns
th(NOE-D) 0 -
FMC_NOE high
td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3Tfmc_ker_ck +0.5
th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 4Tfmc_ker_ck –1 -
Table 75. Switching characteristics for NAND Flash write cycles(1)

tw(NWE) FMC_NWE low width 4Tfmc_ker_ck – 0.5 4Tfmc_ker_ck +0.5

FMC_NWE low to FMC_D[15-0]
tv(NWE-D) 0 -
valid
FMC_NWE high to FMC_D[15-0]
th(NWE-D) 2Tfmc_ker_ck +1.5 -
invalid
FMC_D[15-0] valid before ns
td(D-NWE) 5Tfmc_ker_ck – 5 -
FMC_NWE high
FMC_ALE valid before FMC_NWE
td(ALE-NWE) - 3Tfmc_ker_ck +0.5
low
FMC_NWE high to FMC_ALE
th(NWE-ALE) 2Tfmc_ker_ck – 0.5 -
invalid
DS13311 Rev 3 187/282

250
SDRAM waveforms and timings

In all timing tables, the TKERCK is the fmc_ker_ck clock period, with the following
FMC_SDCLK maximum values:
• For 2.7 V<VDD<3.6 V: maximum FMC_CLK = 95 MHz at 20 pF
• For 1.8 V<VDD<1.9 V: maximum FMC_CLK = 90 MHz at 20 pF
• For 1.62 V<DD<1.8 V: maximum FMC_CLK = 85 MHz at 15 pF
Figure 39. SDRAM read access waveforms (CL = 1)
FMC_SDCLK
td(SDCLKL_AddC)
td(SDCLKL_AddR) th(SDCLKL_AddR)
FMC_A[12:0] Row n Col1 Col2 Coli Coln
th(SDCLKL_AddC)
td(SDCLKL_SNDE) th(SDCLKL_SNDE)
FMC_SDNE[1:0]
td(SDCLKL_NRAS) th(SDCLKL_NRAS)
FMC_SDNRAS
td(SDCLKL_NCAS) th(SDCLKL_NCAS)
FMC_SDNCAS
FMC_SDNWE
tsu(SDCLKH_Data) th(SDCLKH_Data)
FMC_D[31:0] Data1 Data2 Datai Datan
MS32751V2
188/282 DS13311 Rev 3

Table 76. SDRAM read timings(1)

2Tfmc_ker_ck – 2Tfmc_ker_ck
tw(SDCLK) FMC_SDCLK period
0.5 +0.5
tsu(SDCLKH _Data) Data input setup time 3 -
th(SDCLKH_Data) Data input hold time 1.5 -
td(SDCLKL_Add) Address valid time - 2.0
td(SDCLKL- SDNE) Chip select valid time - 1.5(2) ns
th(SDCLKL_SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS) SDNRAS valid time - 1
th(SDCLKL_SDNRAS) SDNRAS hold time 0 -
td(SDCLKL_SDNCAS) SDNCAS valid time - 2.0
th(SDCLKL_SDNCAS) SDNCAS hold time 0.5 -
2. Using PC2_C I/O adds 4.5 ns to this timing.
Table 77. LPSDR SDRAM read timings(1)

2Tfmc_ker_ck –
tW(SDCLK) FMC_SDCLK period 2Tfmc_ker_ck+0.5
0.5
tsu(SDCLKH_Data) Data input setup time 3 -
th(SDCLKH_Data) Data input hold time 2.5 -
td(SDCLKL_Add) Address valid time - 2
td(SDCLKL_SDNE) Chip select valid time - 1.5(2)(3) ns
th(SDCLKL_SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS SDNRAS valid time - 1
td(SDCLKL_SDNCAS) SDNCAS valid time - 2
th(SDCLKL_SDNCAS) SDNCAS hold time 0.5 -
2. Using PC2 I/O adds 4 ns to this timing.
DS13311 Rev 3 189/282

250
Figure 40. SDRAM write access waveforms
FMC_SDCLK
td(SDCLKL_AddC)
td(SDCLKL_AddR) th(SDCLKL_AddR)
FMC_A[12:0] Row n Col1 Col2 Coli Coln
th(SDCLKL_AddC)
td(SDCLKL_SNDE) th(SDCLKL_SNDE)
FMC_SDNE[1:0]
td(SDCLKL_NRAS) th(SDCLKL_NRAS)
FMC_SDNRAS
td(SDCLKL_NCAS) th(SDCLKL_NCAS)
FMC_SDNCAS
td(SDCLKL_NWE) th(SDCLKL_NWE)
FMC_SDNWE
td(SDCLKL_Data)
FMC_D[31:0] Data1 Data2 Datai Datan
td(SDCLKL_NBL) th(SDCLKL_Data)
FMC_NBL[3:0]
MS32752V2
Table 78. SDRAM Write timings(1)

tw(SDCLK) FMC_SDCLK period 2Tfmc_ker_ck – 0.5 2Tfmc_ker_ck+0.5

td(SDCLKL _Data) Data output valid time - 2
th(SDCLKL _Data) Data output hold time 0.5 -
td(SDCLKL_Add) Address valid time - 2
td(SDCLKL_SDNWE) SDNWE valid time - 2
th(SDCLKL_SDNWE) SDNWE hold time 0 -
ns
td(SDCLKL_ SDNE) Chip select valid time - 1.5(2)
th(SDCLKL-_SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS) SDNRAS valid time - 1
td(SDCLKL_SDNCAS) SDNCAS valid time - 2
td(SDCLKL_SDNCAS) SDNCAS hold time 0.5 -
190/282 DS13311 Rev 3

Table 79. LPSDR SDRAM Write timings(1)

tw(SDCLK) FMC_SDCLK period 2Tfmc_ker_ck – 0.5 2Tfmc_ker_ck+0.5

td(SDCLKL _Data) Data output valid time - 2
th(SDCLKL _Data) Data output hold time 0 -
td(SDCLKL_Add) Address valid time - 2.5
td(SDCLKL-SDNWE) SDNWE valid time - 2
th(SDCLKL-SDNWE) SDNWE hold time 0 -
ns
td(SDCLKL- SDNE) (2)(3)
Chip select valid time - 1.5
th(SDCLKL- SDNE) Chip select hold time 0 -
td(SDCLKL-SDNRAS) SDNRAS valid time - 1
th(SDCLKL-SDNRAS) SDNRAS hold time 0 -
td(SDCLKL-SDNCAS) SDNCAS valid time - 2
td(SDCLKL-SDNCAS) SDNCAS hold time 0.5 -
2. Using PC2 I/O adds 4 ns to this timing.
6.3.20 Octo-SPI interface characteristics

Unless otherwise specified, the parameters given in Table 80 and Table 82 for OCTOSPI
are derived from tests performed under the ambient temperature, fHCLK frequency and VDD
supply voltage conditions summarized in Table 13: General operating conditions, with the
following configuration:
• VOS level set to VOS0
function characteristics.
Table 80. OCTOSPI characteristics in SDR mode(1)(2)

1.71 V < VDD < 3.6 V,

VOS0, - - 92
CLOAD = 15 pF
1.71 V < VDD < 3.6 V,
F(CLK) OCTOSPI clock frequency - - 90 MHz
VOS0, CLOAD =20 pF
2.7 V < VDD < 3.6 V,
VOS0, - - 140
CLOAD = 20 pF
DS13311 Rev 3 191/282

250
Table 80. OCTOSPI characteristics in SDR mode(1)(2) (continued)

tw(CKH) OCTOSPI clock high and low PRESCALER[7:0] = n t(CK)/2 - t(CK)/2+1

tw(CKL) time, even division = 0,1,3,5 t(CK)/2–1 - t(CK)/2
(n/2)*t(CK)/ (n/2)*t(CK)/
tw(CKH) -
OCTOSPI clock high and low PRESCALER[7:0] = n (n+1) (n+1)+1
time, odd division = 2,4,6,8 (n/2+1)*t(CK)/ (n/2+1)*t(CK)
tw(CKL) - ns
(n+1)–1 /(n+1)
ts(IN)(3) Data input setup time - 3.0 - -
th(IN) (3) Data input hold time - 1.5 - -
tv(OUT) Data output valid time - - 0.5 1(4)
th(OUT) Data output hold time - 0 - -
1. All values apply to Octal and Quad-SPI mode.
3. Delay block bypassed.
4. Using PC2 or PC3 I/O in the data bus adds 4 ns to this timing value.
Figure 41. OCTOSPI SDR read/write timing diagram

tr(CLK) t(CLK) tw(CLKH) tw(CLKL) tf(CLK)
Clock
tv(OUT) th(OUT)
Data output D0 D1 D2
ts(IN) th(IN)
Data input D0 D1 D2
MSv36878V3
192/282 DS13311 Rev 3

Table 81. OCTOSPI characteristics in DTR mode (no DQS)(1)(2)

1.71 V < VDD < 3.6 V,

- - 90(4)
VOS0, CLOAD = 15 pF
1.71 V < VDD < 3.6 V,
FCK(3) OCTOSPI clock frequency - - 87(4) MHz
VOS0, CLOAD = 20 pF
2.7 V < VDD < 3.6 V,
- - 110
VOS0, CLOAD = 20 pF
tw(CKH) OCTOSPI clock high and PRESCALER[7:0] = n t(CK)/2 - t(CK)/2+1
tw(CKL) low time, even division = 0,1,3,5 t(CK)/2–1 - t(CK)/2
(n/2)*t(CK)/ (n/2)*t(CK)/
tw(CKH) -
OCTOSPI clock high and PRESCALER[7:0] = n (n+1) (n+1)+1
low time, odd division = 2,4,6,8 (n/2+1)*t(CK)/( (n/2+1)*
tw(CKL) -
n+1) – 1 t(CK)/(n+1)
tsr(IN)
Data input setup time - 3.0 - -
tsf(IN)(5)
ns
thr(IN)
Data input hold time - 1.50 - -
thf(IN)(5)
DHQC = 0 - 6 7(6)
tvr(OUT)
Data output valid time DHQC = 1, tpclk/4+ tpclk/4+1.25
tvf(OUT) - (6)
Prescaler = 1,2 ... 1
DHQC = 0 4.5 - -
thr(OUT)
Data output hold time DHQC = 1,
thf(OUT) tpclk/4 - -
Prescaler = 1,2 ...
1. All values apply to Octal and Quad-SPI mode.
3. DHQC must be set to reach the mentioned frequency.
4. Using PC2 or PC3 I/O in the data bus decreases the frequency to 47 MHz.
5. Delay block bypassed.
6. Using PC2 or PC3 I/O in the data bus adds 4 ns to this timing value.
Figure 42. OCTOSPI DTR mode timing diagram

Clock
tvf(OUT) thr(OUT) tvr(OUT) thf(OUT)
Data output D0 D1 D2 D3 D4 D5
tsf(IN) thf(IN) tsr(IN) thr(IN)
Data input D0 D1 D2 D3 D4 D5
MSv36879V4
DS13311 Rev 3 193/282

250
Table 82. OCTOSPI characteristics in DTR mode (with DQS)/Octal and Hyperbus(1)
2,7 V < VDD < 3.6 V,

- - 100
VOS0, CLOAD = 20 pF
FCK(2)(3) OCTOSPI clock frequency MHz
1.71 V < VDD < 3.6 V,
- - 100(4)
VOS0, CLOAD = 20 pF
tw(CKH) OCTOSPI clock high and PRESCALER[7:0] = n = t(CK)/2 - t(CK)/2+1
ns
tw(CKL) low time, even division 0,1,3,5 t(CK)/2–1 - t(CK)/2
(n/2)*t(CK)/ (n/2)*t(CK)/
tw(CKH) -
OCTOSPI clock high and PRESCALER[7:0] = n = (n+1) (n+1)+1
low time, odd division 2,4,6,8 (n/2+1)*t(CK)/( (n/2+1)*t(CK)/
tw(CKL) - ns
n+1)–1 (n+1)
tv(CK) Clock valid time - - - t(CK)+1
th(CK) Clock hold time - t(CK)/2 - -
CK,CK crossing level on CK
VODr(CK) VDD = 1.8 V 922 - 1229
rising edge
mV
CK,CK crossing level on CK
VODf(CK) VDD = 1.8 V 1000 - 1277
falling edge
tw(CS) Chip select high time - 3*t(CK) - -
tv(DQ) Data input vallid time - 0 - -
tv(DS) Data strobe input valid time - 0 - -
th(DS) Data strobe input hold time - 0 - -
Data strobe output valid
tv(RWDS) - - - 3 x t(CK)
time
tsr(DQ) Rising edge 0 - -
Data input setup time
tsf(DQ) Falling edge 0 - -
thr(DQ) Rising edge 1 - -
Data input hold time
thf(DQ) Falling edge 1 - -
(5) ns
DHQC = 0 - 6 7
Data output valid time rising
tvr(OUT) DHQC = 1, tpclk/4+ tpclk/4+1.25
edge - (5)
Prescaler = 1,2... 1
DHQC = 0 - 5.5 6(5)
Data output valid time
tvf(OUT) DHQC = 1, tpclk/4+ tpclk/4+0.75
falling edge - (5)
Prescaler = 1,2... 0.5
DHQC = 0 4.5 - -
Data output hold time rising
thr(OUT) DHQC = 1,
edge tpclk/4 - -
Prescaler = 1,2...
DHQC = 0 4.5 - -
Data output hold time falling
thf(OUT) DHQC = 1,
edge tpclk/4 - -
Prescaler = 1,2...
194/282 DS13311 Rev 3

2. Maximum frequency values are given for a RWDS to DQ skew of maximum +/-1.0 ns.
3. Activating DHQC is mandatory to reach this frequency
4. Using PC2 or PC3 I/O on data bus decreases the frequency to 47 MHz.
5. Using PC2 or PC3 I/O on the data bus adds 4 ns to this timing value.
Figure 43. OCTOSPI Hyperbus clock timing diagram

tf(NCLK) t(NCLK) tw(NCLKL) tw(NCLKH) tr(NCLK)
NCLK
VOD(CLK)
CLK
MSv47732V3
Figure 44. OCTOSPI Hyperbus read timing diagram

tw(CS)
NCS
tv(CLK) t ACC= Initial access th(CLK)
CLK, NCLK
tv(RWDS) tv(DS) th(DS)
RWDS
tv(OUT) th(OUT) Latency count tv(DQ) ts(DQ) th(DQ)
47:40 39:32 31:24 23:16 15:8 7:0 Dn Dn Dn+1 Dn+1

DQ[7:0] A B A B
Command address
Memory drives DQ[7:0] and RWDS.
Host drives DQ[7:0] and the memory drives RWDS. MSv47733V3
DS13311 Rev 3 195/282

250
Figure 45. OCTOSPI Hyperbus write timing diagram

tw(CS)
NCS
Read write recovery Access latency

tv(CLK) th(CLK)
CLK, NCLK
tv(RWDS) High = 2x latency count tv(OUT) th(OUT)

Low = 1x latency count
RWDS
Latency count
tv(OUT) th(OUT) tv(OUT) th(OUT)
Dn Dn Dn+1 Dn+1
DQ[7:0] 47:40 39:32 31:24 23:16 15:8 7:0
A B A B
Command address Host drives DQ[7:0] and RWDS.

Host drives DQ[7:0] and the memory drives RWDS.
MSv47734V3
6.3.21 Delay block (DLYB) characteristics

Unless otherwise specified, the parameters given in Table 83 for Delay Block are derived
from tests performed under the ambient temperature, frcc_c_ck frequency and VDD supply
voltage summarized in Table 13: General operating conditions, with the following
configuration:
Table 83. Delay Block characteristics

tinit Initial delay - 900 1300 1900 ps

t∆ Unit Delay - 28 33 41 -
6.3.22 16-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 84, Table 85 and Table 86 are
derived from tests performed under the ambient temperature, fPCLK2 frequency and VDDA
supply voltage conditions summarized in Table 13: General operating conditions.
Table 84. 16-bit ADC characteristics(1)(2)

Analog supply
VDDA voltage for ADC - 1.62 - 3.6
ON
Positive VDDA ≥ 2 V 1.62 - VDDA

V
VREF+
reference voltage VDDA < 2 V VDDA
Negative
VREF- - VSSA
reference voltage
196/282 DS13311 Rev 3

Table 84. 16-bit ADC characteristics(1)(2) (continued)

BOOST = 11 0.12 - 50
BOOST = 10 0.12 - 25
ADC clock
fADC 1.62 V ≤ VDDA ≤ 3.6 V MHz
frequency BOOST = 01 0.12 - 12.5
BOOST = 00 - - 6.25
Resolution = 16 bits,
fADC = 36 MHz SMP = 1.5 - - 3.60
VDDA >2.5 V
TJ = 90 °C
Resolution = 16 bits fADC = 37 MHz SMP = 2.5 - - 3.35

TJ = 125 °C
Sampling rate for Resolution = 10 bits fADC = 50 MHz SMP = 1.5 - - 7.10
Direct channels

TJ = 140 °C
Resolution = 16 bits,
fADC = 32 MHz SMP = 2.5 - - 2.90
VDDA >2.5 V TJ = 90 °C

fs(3) MSps
Sampling rate for TJ = 125 °C
Fast channels Resolution = 10 bits fADC = 48 MHz SMP = 2.5 - - 6.00
Resolution = 10 bits TJ = 140 °C fADC = 46 MHz SMP = 2.5 - - 5.70
Resolution = 16 bits TJ = 90 °C - -
resolution = 14 bits - -
TJ = 125 °C
Sampling rate for
1.00
Slow channels(4)
resolution = 10 bits TJ = 140 °C - -
External trigger 1/
tTRIG Resolution = 16 bits - - 10
period fADC
Conversion
VAIN(5) - 0 - VREF+ V
voltage range
Common mode VREF/2 VREF/ VREF/2

VCMIV - V
input voltage − 10% 2 + 10%
DS13311 Rev 3 197/282

250

Resolution = 16 bits, TJ = 140 °C - - 50
Resolution = 16 bits, TJ = 125 °C - - - - 170
Resolution = 14 bits, TJ = 125 °C - - - - 435
External input Resolution = 12 bits, TJ = 140 °C - - 700

RAIN(6) Ω
impedance Resolution = 12 bits, TJ =125 °C - - - - 1,150
Resolution = 10 bits, TJ = 140 °C - - 3,700
Resolution = 10 bits, TJ = 125 °C - - - - 5,650
Resolution = 8bits, TJ = 140 °C - - 18,000
Resolution = 8 bits, TJ = 125 °C - - - - 26,500
Internal sample
CADC and hold - - 4 - pF
capacitor
tADCVREG ADC LDO startup

- - 5 10 us
_STUP time
conver
ADC Power-up
tSTAB LDO already started 1 - - sion
time
cycle
Offset and
tCAL linearity - 16,5010 1/fADC
calibration time
tOFF_ Offset calibration

- 1,280 1/fADC
CAL time
Trigger CKMODE = 00 1.5 2 2.5

conversion
CKMODE = 01 - - 2.5
latency regular
tLATR 1/fADC
and injected
CKMODE = 10 - - 2.5
channels without
conversion abort CKMODE = 11 - - 2.25

conversion
CKMODE = 01 - - 3.5
latency regular
tLATRINJ 1/fADC
injected channels
CKMODE = 10 - - 3.5
aborting a regular
conversion CKMODE = 11 - - 3.25
tS Sampling time - 1.5 - 810.5 1/fADC
Total conversion
ts + 0.5
tCONV time (including Resolution = N bits - - 1/fADC
+ N/2
sampling time)
198/282 DS13311 Rev 3


ADC Resolution = 16 bits, fADC = 25 MHz - - - 1,440 -

consumption on
VDDA, Resolution = 14 bits, fADC = 30 MHz - - - 1,350 -
BOOST=11,
Differential mode Resolution = 12 bits, fADC = 40 MHz - - - 990 -
ADC Resolution = 16 bits - - - 1,080 -

consumption on
VDDA, Resolution = 14 bits - - - 810 -
BOOST=10,
Differential mode, Resolution = 12 bits - - - 585 -
fADC = 25 MHz
IDDA_D
(ADC) ADC Resolution = 16 bits - - - 630 -
consumption on
BOOST=01,
fADC = 12.5 MHz
ADC Resolution = 16 bits - - - 360 -

consumption on
BOOST=00,
fADC = 6.25 MHz
ADC Resolution = 16 bits, fADC=25 MHz - - - 720 -

consumption on
VDDA, Resolution = 14 bits, fADC=30 MHz - - - 675 -
BOOST=11,
Single-ended Resolution = 12 bits, fADC=40 MHz - - - 495 -
mode
µA
consumption on
BOOST=10,
Singl-ended
mode, Resolution = 12 bits - - - 292.5 -
fADC = 25 MHz
IDDA_SE
(ADC) ADC Resolution = 16 bits - - - 315 -
consumption on
BOOST=01,
Single-ended
mode, Resolution = 12 bits - - - 157.5 -
fADC = 12.5 MHz

consumption on
VDDA Resolution = 14 bits - - - 135 -
BOOST=00,
Single-ended
mode Resolution = 12 bits - - - 112.5 -
fADC=6.25 MHz
fADC=50 MHz - - - 400 -
fADC=25 MHz - - - 220 -

ADC
IDD
consumption on fADC=12.5 MHz - - - 180 -
(ADC)
VDD
fADC=6.25 MHz - - - 120 -
fADC=3.125 MHz - - - 80 -
2. The voltage booster on ADC switches must be used for VDDA < 2.4 V (embedded I/O switches).
3. These values are valid for TFBGA100, UFBGA169 and UFBGA176+25 packages and one ADC. The values for other packages and multiple
ADCs may be different.
4. For slow channels, the performance should be limited to 1 Msps what ever the value of fADC.
DS13311 Rev 3 199/282

250
5. Depending on the package, VREF+ can be internally connected to VDDA and VREF- to VSSA.
6. The tolerance is 10 LSBs for 16-bit resolution, 4 LSBs for 14-bit resolution, and 2 LSBs for 12-bit, 10-bit and 8-bit resolutions.
Table 85. Minimum sampling time vs RAIN (16-bit ADC)(1)(2)

Minimum sampling time (s)
Resolution RAIN (Ω)
Direct
Fast channels(4) Slow channels(5)
channels(3)
16 bits 47 7.37E-08 1.14E-07 1.72E-07

47 6.29E-08 9.74E-08 1.55E-07
68 6.84E-08 1.02E-07 1.58E-07
14 bits 100 7.80E-08 1.12E-07 1.62E-07
150 9.86E-08 1.32E-07 1.80E-07
220 1.32E-07 1.61E-07 2.01E-07
47 5.32E-08 8.00E-08 1.29E-07
68 5.74E-08 8.50E-08 1.32E-07
100 6.58E-08 9.31E-08 1.40E-07
150 8.37E-08 1.10E-07 1.51E-07
12 bits
220 1.11E-07 1.34E-07 1.73E-07
330 1.56E-07 1.78E-07 2.14E-07
470 2.16E-07 2.39E-07 2.68E-07
680 3.01E-07 3.29E-07 3.54E-07
47 4.34E-08 6.51E-08 1.08E-07
68 4.68E-08 6.89E-08 1.11E-07
100 5.35E-08 7.55E-08 1.16E-07
150 6.68E-08 8.77E-08 1.26E-07
220 8.80E-08 1.08E-07 1.40E-07
330 1.24E-07 1.43E-07 1.71E-07
10 bits
470 1.69E-07 1.89E-07 2.13E-07
680 2.38E-07 2.60E-07 2.80E-07
1000 3.45E-07 3.66E-07 3.84E-07
1500 5.15E-07 5.35E-07 5.48E-07
2200 7.42E-07 7.75E-07 7.78E-07
3300 1.10E-06 1.14E-06 1.14E-06
200/282 DS13311 Rev 3

Table 85. Minimum sampling time vs RAIN (16-bit ADC)(1)(2) (continued)

Resolution RAIN (Ω)
Direct
Fast channels(4) Slow channels(5)
channels(3)
47 3.32E-08 5.10E-08 8.61E-08

68 3.59E-08 5.35E-08 8.83E-08
100 4.10E-08 5.83E-08 9.22E-08
150 5.06E-08 6.76E-08 9.95E-08
220 6.61E-08 8.22E-08 1.11E-07
330 9.17E-08 1.08E-07 1.32E-07
470 1.24E-07 1.40E-07 1.63E-07
680 1.74E-07 1.91E-07 2.12E-07
8 bits
1000 2.53E-07 2.70E-07 2.85E-07
1500 3.73E-07 3.93E-07 4.05E-07
2200 5.39E-07 5.67E-07 5.75E-07
3300 8.02E-07 8.36E-07 8.38E-07
4700 1.13E-06 1.18E-06 1.18E-06
6800 1.62E-06 1.69E-06 1.68E-06
10000 2.36E-06 2.47E-06 2.45E-06
15000 3.50E-06 3.69E-06 3.65E-06
2. Data valid at up to 130 °C, with a 47 pF PCB capacitor, and VDDA=1.6 V.
3. Direct channels are connected to analog I/Os (PA0_C, PA1_C, PC2_C and PC3_C) to optimize ADC performance.
4. Fast channels correspond to PA6, PB1, PC4, PF11, PF13 for ADCx_INPx, and to PA7, PB0, PC5, PF12, PF14 for
ADCx_INNx.
5. Slow channels correspond to all ADC inputs except for the Direct and Fast channels.
DS13311 Rev 3 201/282

250
Table 86. 16-bit ADC accuracy(1)(2)

Symbol Parameter Conditions(3) Min Typ Max Unit
Direct Single ended - +10/–20 -

channel Differential - ±15 -
Single ended - +10/–20 -
ET Total undadjusted error Fast channel
Differential - ±15 -
Slow Single ended - ±10 -

channel Differential ±10 -
EO Offset error - - ±10 -
EG Gain error - - ±15 -
LSB
Single ended - +3/–1 -
ED Differential linearity error
Differential - +4.5/–1 -
Direct Single ended - ±11 -

Single ended - ±13 -
EL Integral linearity error Fast channel
Differential - ±7 -
Slow Single ended - ±10 -

Single ended - 12.2 -
ENOB Effective number of bits Bits
Differential - 13.2 -
Signal-to-noise and Single ended - 75.2 -

SINAD
distortion ratio Differential - 81.2 -
Single ended - 77.0 -
SNR Signal-to-noise ratio dB
Differential - 81.0 -
Single ended - 87 -
THD Total harmonic distortion
Differential - 90 -
1. Guaranteed by characterization results for BGA packages. The values for LQFP packages might differ.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC clock frequency = 25 MHz, ADC resolution = 16 bits, VDDA=VREF+=3.3 V, BOOST=11 and 16-bit mode.
Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) does not
affect the ADC accuracy.
202/282 DS13311 Rev 3

Figure 46. ADC accuracy characteristics
VREF+ VDDA
[1LSB = (or )]
Output code 2n 2n
EG
(1) Example of an actual transfer curve
2n-1 (2) Ideal transfer curve
2n-2 (3) End-point correlation line
2n-3 (2)
n = ADC resolution
ET = total unadjusted error: maximum deviation
(3) between the actual and ideal transfer curves
ET
7 (1) EO = offset error: maximum deviation between the first
actual transition and the first ideal one
6
EL EG = gain error: deviation between the last ideal
5 EO
transition and the last actual one
4 ED = differential linearity error: maximum deviation
ED between actual steps and the ideal one
3
2 EL = integral linearity error: maximum deviation between
1 any actual transition and the end point correlation line
1 LSB ideal
0 VREF+ (VDDA)
(1/2n)*VREF+
(2/2n)*VREF+
(3/2n)*VREF+
(4/2n)*VREF+
(5/2n)*VREF+
(6/2n)*VREF+
(7/2n)*VREF+
(2n-3/2n)*VREF+
(2n-2/2n)*VREF+
(2n-1/2n)*VREF+
(2n/2n)*VREF+
VSSA
MSv19880V6
1. Example of an actual transfer curve.

2. Ideal transfer curve.
3. End point correlation line.
4. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Figure 47. Typical connection diagram when using the ADC with FT/TT pins
featuring analog switch function
VDDA(4) VREF+(4)
I/O Sample-and-hold ADC converter

analog
RAIN(1) switch RADC
Converter
Cparasitic(2) Ilkg(3) CADC

VAIN Sampling
switch with
multiplexing
VSS VSS VSSA
MSv67871V3
1. Refer to Table 84: 16-bit ADC characteristics for the values of RAIN, RADC and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 55: I/O static characteristics). A high Cparasitic value downgrades
conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 55: I/O static characteristics for the value of Ilkg.
4. Refer to Figure 14: Power supply scheme.
DS13311 Rev 3 203/282

250
General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 48 or Figure 49,
depending on whether VREF+ is connected to VDDA or not. The 100 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.
Figure 48. Power supply and reference decoupling (VREF+ not connected to VDDA)
STM32
VREF+(1)
1 μF // 100 nF
VDDA
1 μF // 100 nF
VSSA/VREF-(1)
MSv50648V2
1. When VREF+ and VREF- inputs are not available, they are internally connected to VDDA and VSSA,
respectively.
Figure 49. Power supply and reference decoupling (VREF+ connected to VDDA)
STM32
VREF+/VDDA(1)
1 μF // 100 nF
VREF-/VSSA(1)
MSv50649V1
1. When VREF+ and VREF- inputs are not available, they are internally connected to VDDA and VSSA,
respectively.
204/282 DS13311 Rev 3

6.3.23 12-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 87, Table 88 and Table 89 are
derived from tests performed under the ambient temperature and VDDA supply voltage
conditions summarized in Table 13: General operating conditions. In Table 87, Table 88 and
Table 89, fADC refers to fadc_ker_ck.
Table 87. 12-bit ADC characteristics(1)(2)

Sym-
bol
Analog
power
VDDA - 1.62 - 3.6
supply for
ADC ON
Positive
VREF+ V
(3) reference VDDA ≥ VREF+ 1.62 - VDDA
voltage
Negative
VREF- reference - VSSA - -
voltage
ADC clock
fADC 1,62 V ≤ VDDA ≤ 3.6 V 1.5 - 75 MHz
frequency
fADC = 75
Continuous 2.4 V ≤ VDDA ≤ 3.6 V - - 5
MHz
and
Discontinuous fADC = 60
mode(5) 1.6V ≤ VDDA≤ 3.6 V - - 4
MHz
Resolution SMP
–40 °C ≤ TJ ≤ 130 °C
= 12 bits = 2.5
fADC = 50
2.4 V ≤ VDDA ≤ 3.6 V - - 3.33
MHz(6)
Single mode
fADC = 38
1.6 V ≤ VDDA ≤ 3.6 V - - 2.53
MHz(6)
Continuous
and fADC = 75
1.6V ≤ VDDA ≤ 3.6V - - 5.77
Discontinuous MHz
mode(5)
Resolution SMP
–40 °C ≤ TJ ≤ 130 °C
= 10 bits fADC = 58 = 2.5
2.4 V ≤ VDDA ≤ 3.6 V - - 4.46
MHz(6)
Single mode
Sampling fADC = 42
1.6V ≤ VDDA ≤ 3.6V - - 3.23
rate for MHz(6)
fS(4) MSPS
Direct
channels Continuous
and fADC = 75
1.6V ≤ VDDA ≤ 3.6V - - 6.82
Discontinuous MHz
mode(5)
Resolution SMP
–40 °C ≤ TJ ≤ 130 °C
= 8 bits fADC = 67 = 2.5
2.4 V ≤ VDDA ≤ 3.6 V - - 6.09
MHz(6)
Single mode
fADC = 48
1.6V ≤ VDDA ≤ 3.6V - - 4.36
MHz(6)
Continuous
and fADC = 75
1.6V ≤ VDDA ≤ 3.6V - - 8.33
Discontinuous MHz
mode(5)
Resolution SMP
–40 °C ≤ TJ ≤ 130 °C
= 6 bits fADC = 75 = 2.5
2.4 V ≤ VDDA ≤ 3.6 V - - 8.33
MHz(6)
Single mode
fADC = 55
1.6V ≤ VDDA ≤ 3.6V - - 6.11
MHz(6)
DS13311 Rev 3 205/282

250

Sym-
bol
fADC = 65
Continuous 2.4 V ≤ VDDA ≤ 3.6 V - - 4.33
MHz
and
Discontinuous
fADC = 58
mode(5) 1.6V ≤ VDDA ≤ 3.6V
MHz
- - 3.87
Resolution SMP
–40 °C ≤ TJ ≤ 130 °C
= 12 bits fADC = 32 = 2.5
2.4 V ≤ VDDA ≤ 3.6 V - - 2.13
MHz(6)
Single mode
fADC =
1.6V ≤ VDDA ≤ 3.6V - - 1.73
26 MHz(6)
Continuous
and fADC = 75
1.6V ≤ VDDA ≤ 3.6V - - 5.77
Discontinuous MHz
mode(5)
Resolution SMP
–40 °C ≤ TJ ≤ 130 °C
= 10 bits fADC = 36 = 2.5
2.4 V ≤ VDDA ≤ 3.6 V - - 2.77
MHz(6)
Single mode
Sampling fADC = 30
1.6V ≤ VDDA ≤ 3.6V - - 2.31
rate for fast MHz(6)
channels
(VIN[0:5]) Continuous
and fADC = 75
1.6V ≤ VDDA ≤ 3.6V - - 6.82
Discontinuous MHz
fS(4) mode(5)
Resolution SMP
(conti- –40 °C ≤ TJ ≤ 130 °C MSPS
= 8 bits fADC =44 = 2.5
nued) 2.4 V ≤ VDDA ≤ 3.6 V - - 4.00
MHz(6)
Single mode
fADC = 35
1.6V ≤ VDDA ≤ 3.6V - - 3.18
MHz(6)
Continuous
and fADC = 75
1.6V ≤ VDDA ≤ 3.6V - - 8.33
Discontinuous MHz
mode(5)
Resolution SMP
–40 °C ≤ TJ ≤ 130 °C
= 6 bits fADC = 56 = 2.5
2.4 V ≤ VDDA ≤ 3.6 V - - 6.22
MHz(6)
Single mode
fADC = 42
1.6V ≤ VDDA ≤ 3.6V - - 4.66
MHz(6)
Resolution
- - 1.00
= 12 bits
Resolution
Sampling - - 1.28
= 10 bits
fADC = 15 SMP
rate for slow - - –40 °C ≤ TJ ≤ 130 °C
Resolution MHz(6) = 2.5
channels - - 1.63
= 8 bits
Resolution
- - 2.08
= 6 bits
External
tTRIG trigger Resolution = 12 bits - - 15 1/fADC
period
Conversion
VAIN voltage - 0 - VREF+
range
V
Common VREF
VREF VREF/2
VCMIV mode input - /2−
/2 + 10%
voltage 10%
206/282 DS13311 Rev 3


Sym-
bol
Resolution = 12 bits, TJ = 140 °C (tolerance 4 LSBs) - - 321
External Resolution = 10 bits, TJ = 125 °C - - 2100

RAIN
(7) input Ω
impedance Resolution = 8 bits, TJ = 140 °C - - 6327
Internal
sample and
CADC - - 5 - pF
hold
capacitor
tADCV
ADC LDO
REG_ - - 5 10 µs
startup time
STUP
con-
ADC power-
tSTAB LDO already started 1 - - version
up time
cycle
Offset
tOFF_
calibration - 135 - -
CAL time

conversion
latency for CKMODE = 01 - - 2.5
regular and
tLATR injected CKMODE = 10 - - 2.5
channels
without
aborting the CKMODE = 11 - - 2.25
conversion

conversion
latency for CKMODE = 01 - - 3.5
1/fADC
regular and
tLATR injected CKMODE = 10 - - 3.5
INJ channels
when a
regular CKMODE = 11 - - 3.25
conversion
is aborted
Sampling
tS - 2.5 - 640.5
time
Total
conversion
tS +
time
tCONV N-bits resolution 0.5 + - -
(including
N
sampling
time)
DS13311 Rev 3 207/282

250

Sym-
bol
ADC fS= 5 MSPS - 430 -

consumption
IDDA_ on VDDA and fS = 1 MSPS - 133 -
D(ADC) VREF,
Differential fS = 0.1 MSPS - 51 -
mode
µA
ADC fS= 5 MSPS - 350 -
consumption
IDDA_ fS = 1 MSPS - 122 -
on VDDA and
SE VREF,
(ADC) Single- fS = 0.1 MSPS - 47 -
ended mode
ADC
IDD consumption µA/
- - 2.4 -
(ADC) on VDD per MHz
fADC
2. The voltage booster on ADC switches must be used for VDDA < 2.4 V (embedded I/O switches).
3. Depending on the package, VREF+ can be internally connected to VDDA and VREF- to VSSA.
4. Guaranteed by characterization for BGA and CSP packages. The values for LQFP packages may be different.
5. The conversion of the first element in the group is excluded.
6. fADC value corresponds to the maximum frequency that can be reached considering a 2.5 sampling period. For other SMPy sampling periods,
the maximum frequency is fADC value * SMPy / 2.5 with a limitation to 75 MHz.
7. The tolerance is 2 LSBs for 12-bit, 10-bit and 8-bit resolutions. It is otherwise specified.
Table 88. Minimum sampling time vs RAIN (12-bit ADC)(1)(2)

Resolution RAIN (Ω)
Direct channels(3) Fast channels(4) Slow channels(5)
47 5.55E-08 7.04E-08 1.03E-07

68 5.76E-08 7.22E-08 1.05E-07
100 6.17E-08 7.65E-08 1.07E-07
150 7.02E-08 8.45E-08 1.13E-07
12 bits
220 8.59E-08 1.00E-07 1.22E-07
330 1.11E-07 1.26E-07 1.41E-07
470 1.46E-07 1.61E-07 1.69E-07
680 1.98E-07 2.17E-07 2.25E-07
208/282 DS13311 Rev 3


47 4.90E-08 6.06E-08 8.77E-08

68 5.07E-08 6.27E-08 8.95E-08
100 5.41E-08 6.67E-08 9.22E-08
150 6.18E-08 7.50E-08 9.59E-08
220 7.51E-08 8.70E-08 1.04E-07
330 9.46E-08 1.07E-07 1.17E-07
10 bits
470 1.22E-07 1.34E-07 1.42E-07
680 1.63E-07 1.77E-07 1.86E-07
1000 2.27E-07 2.42E-07 2.43E-07
1500 3.27E-07 3.40E-07 3.35E-07
2200 4.53E-07 4.86E-07 4.73E-07
3300 6.56E-07 6.93E-07 6.72E-07
47 4.35E-08 5.31E-08 7.36E-08
68 4.47E-08 5.48E-08 7.47E-08
100 4.72E-08 5.79E-08 7.63E-08
150 5.33E-08 6.35E-08 7.88E-08
220 6.26E-08 7.26E-08 8.47E-08
330 7.84E-08 8.80E-08 9.48E-08
470 9.80E-08 1.07E-07 1.14E-07
680 1.28E-07 1.39E-07 1.43E-07
8 bits
1000 1.76E-07 1.88E-07 1.90E-07
1500 2.49E-07 2.66E-07 2.64E-07
2200 3.50E-07 3.63E-07 3.63E-07
3300 5.09E-07 5.27E-07 5.24E-07
4700 7.00E-07 7.28E-07 7.09E-07
6800 9.84E-07 1.03E-06 1.00E-06
10000 1.43E-06 1.48E-06 1.44E-06
15000 2.10E-06 2.18E-06 2.11E-06
DS13311 Rev 3 209/282

250

47 3.79E-08 4.58E-08 5.74E-08

68 3.88E-08 4.69E-08 5.81E-08
100 4.09E-08 4.89E-08 5.93E-08
150 4.48E-08 5.25E-08 6.14E-08
220 5.07E-08 5.81E-08 6.58E-08
330 6.04E-08 6.79E-08 7.46E-08
470 7.37E-08 8.10E-08 8.60E-08
680 9.31E-08 1.01E-07 1.04E-07
6 bits
1000 1.23E-07 1.32E-07 1.34E-07
1500 1.71E-07 1.82E-07 1.82E-07
2200 2.39E-07 2.50E-07 2.49E-07
3300 3.43E-07 3.57E-07 3.49E-07
4700 4.72E-07 4.92E-07 4.81E-07
6800 6.65E-07 6.89E-07 6.68E-07
10000 9.54E-07 9.88E-07 9.54E-07
15000 1.40E-06 1.45E-06 1.39E-06
2. Data valid up to 130 °C, with a 22 pF PCB capacitor and VDDA = 1.62 V.
3. Direct channels are connected to analog I/Os (PA0_C, PA1_C, PC2_C and PC3_C) to optimize ADC performance.
4. Fast channels correspond to ADCx_INx[0:5].
5. Slow channels correspond to all ADC inputs except for the Direct and Fast channels.
210/282 DS13311 Rev 3

Table 89. 12-bit ADC accuracy(1)(2)

Single
- 3.5 5
Direct channel ended
Differential - 2.5 3
Total Single
- 3.5 5
ET unadjusted Fast channel ended
error Differential - 2.5 3
Single
- 3.5 5
Slow channel ended
Differential - 2.5 3
EO Offset error - - +/-2 +/-5
TBD
EG Gain error - - (3) -
+/- +1.5/- ±LSB

Differential Single ended -
0.75 1
ED linearity
error +1.25
Differential - +/-0.5
/-1
Single
- +/-1 +/-2.5
Direct channel ended
Differential - +/-1 +/-2
Integral Single
- +/-1 +/-2.5
EL linearity Fast channel ended
error Differential - +/-1 +/-2
Single
- +/-1 +/-2.5
Slow channel ended
Differential - +/-1 +/-2
Effective Single ended - 11.2 -
ENOB number of bits
bits Differential - 11.5 -
Signal-to- Single ended - 68.9 -

noise and
SINAD
distortion Differential - 71.1 -
ratio
Signal-to- Single ended - 69.1 - dB

SNR
noise ratio Differential - 71.4 -
Total Single ended - -79.6 -
THD harmonic
distortion Differential - -81.8 -
1. Guaranteed by characterization for BGA packages. The maximum values are preliminary data. The values for LQFP
packages may be different.
2. ADC DC accuracy values are measured after internal calibration in Continuous and Discontinuous mode.
3. TBD stands for “to be defined”.
DS13311 Rev 3 211/282

250
6.3.24 DAC characteristics
Table 90. DAC characteristics(1)

VDDA Analog supply voltage - 1.8 3.3 3.6

VREF+ Positive reference voltage - 1.80 - VDDA
V
Negative reference
VREF- - - VSSA -
voltage
connected
5 - -
DAC output buffer to VSSA
RL Resistive Load
ON connected kΩ
25 - -
to VDDA
RO Output Impedance DAC output buffer OFF 10.3 13 16
Output impedance VDD = 2.7 V - - 1.6
DAC output buffer
RBON sample and hold mode, kΩ
ON VDD = 2.0 V - - 2.6
output buffer ON
Output impedance VDD = 2.7 V - - 17.8
DAC output buffer
RBOFF sample and hold mode, kΩ
OFF VDD = 2.0 V - - 18.7
output buffer OFF
CL DAC output buffer OFF - - 50 pF
Capacitive Load
CSH Sample and Hold mode - 0.1 1 µF
VDDA
Voltage on DAC_OUT DAC output buffer ON 0.2 -
VDAC_OUT −0.2 V
output
DAC output buffer OFF 0 - VREF+
±0.5 LSB - 2.05 3
Settling time (full scale:
for a 12-bit code transition Normal mode, DAC ±1 LSB - 1.97 2.87
between the lowest and output buffer ON,
±2 LSB - 1.67 2.84
the highest input codes CL ≤ 50 pF,
tSETTLING RL ≥ 5 ㏀ ±4 LSB - 1.66 2.78 µs
when DAC_OUT reaches
the final value of ±0.5LSB, ±8 LSB - 1.65 2.7
±1LSB, ±2LSB, ±4LSB,
±8LSB) Normal mode, DAC output buffer
- 1.7 2
OFF, ±1LSB CL=10 pF
Wakeup time from off Normal mode, DAC output buffer
- 5 7.5
state (setting the ENx bit ON, CL ≤ 50 pF, RL = 5 ㏀
tWAKEUP(2) in the DAC Control µs
register) until the final Normal mode, DAC output buffer
2 5
value of ±1LSB is reached OFF, CL ≤ 10 pF
DC VDDA supply rejection Normal mode, DAC output buffer

PSRR - −80 −28 dB
ratio ON, CL ≤ 50 pF, RL = 5 ㏀
212/282 DS13311 Rev 3

Table 90. DAC characteristics(1) (continued)

Sampling time in Sample MODE<2:0>_V12=100/101

- 0.7 2.6
and Hold mode (BUFFER ON)
CL=100 nF ms
MODE<2:0>_V12=110
(code transition between - 11.5 18.7
tSAMP (BUFFER OFF)
the lowest input code and
the highest input code MODE<2:0>_V12=111
when DAC_OUT reaches - 0.3 0.6 µs
(INTERNAL BUFFER OFF)
the ±1LSB final value)
(3)
Ileak Output leakage current - nA
Internal sample and hold
CIint - 1.8 2.2 2.6 pF
capacitor
Middle code offset trim Minimum time to verify the each
tTRIM 50 - - µs
time code
Middle code offset for 1 VREF+ = 3.6 V - 850 -

Voffset µV
trim code step VREF+ = 1.8 V - 425 -
No load,
middle code - 360 -
DAC output buffer (0x800)
ON No load,
worst code - 490 -
(0xF1C)
DAC quiescent
IDDA(DAC) No load,
consumption from VDDA
DAC output buffer middle/
- 20 -
OFF worst code
(0x800)
360*TON/
Sample and Hold mode,
- (TON+TOFF) -
CSH=100 nF (4)
No load,
middle code - 170 - µA
DAC output buffer (0x800)
ON No load,
worst code - 170 -
(0xF1C)
No load,
DAC consumption from DAC output buffer middle/
IDDV(DAC) - 160 -
VREF+ OFF worst code
(0x800)
170*TON/
Sample and Hold mode, Buffer
- (TON+TOFF) -
ON, CSH=100 nF (worst code) (4)
160*TON/
Sample and Hold mode, Buffer
- (TON+TOFF) -
OFF, CSH=100 nF (worst code) (4)
DS13311 Rev 3 213/282

250
2. In buffered mode, the output can overshoot above the final value for low input code (starting from the minimum value).
3. Refer to Table 55: I/O static characteristics.
4. TON is the refresh phase duration, while TOFF is the hold phase duration. Refer to the product reference manual for more
details.
Table 91. DAC accuracy(1)

Differential non DAC output buffer ON −2 - 2

DNL LSB
linearity(2) DAC output buffer OFF −2 - 2
- Monotonicity 10 bits - - - -
DAC output buffer ON, CL ≤ 50 pF,
−4 - 4
RL ≥ 5 ㏀
INL Integral non linearity(3) LSB
DAC output buffer OFF,
−4 - 4
CL ≤ 50 pF, no RL
DAC output VREF+ = 3.6 V - - ±12
buffer ON,
Offset error at code CL ≤ 50 pF, VREF+ = 1.8 V - - ±25
Offset RL ≥ 5 ㏀ LSB
0x800 (3)
- - ±8
CL ≤ 50 pF, no RL
Offset error at code DAC output buffer OFF,
Offset1 - - ±5 LSB
0x001(4) CL ≤ 50 pF, no RL
DAC output VREF+ = 3.6 V - - ±5
Offset error at code buffer ON,
OffsetCal 0x800 after factory LSB
CL ≤ 50 pF, VREF+ = 1.8 V - - ±7
calibration
RL ≥ 5 ㏀
DAC output buffer ON,CL ≤ 50 pF,
- - ±1
RL ≥ 5 ㏀
Gain Gain error(5) %
- - ±1
CL ≤ 50 pF, no RL
- - ±30
RL ≥ 5 ㏀
TUE Total unadjusted error
DAC output buffer OFF, CL ≤
±12 LSB
50 pF, no RL
Total unadjusted error DAC output buffer ON, CL ≤ 50 pF,
TUECal - - ±23
after calibration RL ≥ 5 ㏀
DAC output buffer ON,CL ≤ 50 pF,
- 67.8 -
RL ≥ 5 ㏀ , 1 kHz, BW = 500 KHz
SNR Signal-to-noise ratio(6) DAC output buffer OFF, dB
CL ≤ 50 pF, no RL,1 kHz, BW = - 67.8 -
500 KHz
214/282 DS13311 Rev 3

Table 91. DAC accuracy(1) (continued)

- −78.6 -
Total harmonic RL ≥ 5 ㏀ , 1 kHz
THD dB
distortion(6) DAC output buffer OFF,
- −78.6 -
CL ≤ 50 pF, no RL, 1 kHz
- 67.5 -
Signal-to-noise and RL ≥ 5 ㏀ , 1 kHz
SINAD dB
distortion ratio(6) DAC output buffer OFF,
- 67.5 -
DAC output buffer ON,
- 10.9 -
Effective number of CL ≤ 50 pF, RL ≥ 5 ㏀ , 1 kHz
ENOB bits
bits DAC output buffer OFF,
- 10.9 -
2. Difference between two consecutive codes minus 1 LSB.
3. Difference between the value measured at Code i and the value measured at Code i on a line drawn between Code 0 and
last Code 4095.
4. Difference between the value measured at Code (0x001) and the ideal value.
5. Difference between the ideal slope of the transfer function and the measured slope computed from code 0x000 and 0xFFF
when the buffer is OFF, and from code giving 0.2 V and (VREF+ - 0.2 V) when the buffer is ON.
6. Signal is −0.5dBFS with Fsampling=1 MHz.
Figure 50. 12-bit buffered /non-buffered DAC
Buffered/Non-buffered DAC
Buffer(1)
RL
12-bit DAC_OUTx
digital to
analog
converter
CL
ai17157V3
1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.
DS13311 Rev 3 215/282

250
6.3.25 Voltage reference buffer characteristics
Table 92. VREFBUF characteristics(1)

VSCALE = 000 2.8 3.3 3.6
Normal mode, VSCALE = 001 2.4 - 3.6

VDDA = 3.3 V VSCALE = 010 2.1 - 3.6
VSCALE = 011 1.8 - 3.6
VDDA Analog supply voltage
VSCALE = 000 1.62 - 2.80
VSCALE = 001 1.62 - 2.40
Degraded mode(2)
VSCALE = 010 1.62 - 2.10
VSCALE = 011 1.62 - 1.80
VSCALE = 000 2.4980 2.5000 2.5035
VSCALE = 001 2.0460 2.0490 2.0520 V
Normal mode at 30 °C,
Iload = 100 µA VSCALE = 010 1.8010 1.8040 1.8060
VSCALE = 011 1.4995 1.5015 1.5040
Voltage Reference VDDA−

VREFBUF VSCALE = 000 - VDDA
Buffer Output, at 30 °C, 150 mV
_OUT Iload= 100 µA VDDA−
VSCALE = 001 - VDDA
150 mV
Degraded mode(2)
VDDA−
VSCALE = 010 - VDDA
150 mV
VDDA−
VSCALE = 011 - VDDA
150 mV
TRIM Trim step resolution - - - ±0.05 ±0.1 %
CL Load capacitor - - 0.5 1 1.50 µF
Equivalent Serial
esr
Resistor of CL
- - - - 2 Ω
ILOAD Static load current - - - - 4 mA

Iload = 500 µA - 200 -
Iline_reg Line regulation 2.8 V ≤ VDDA ≤ 3.6 V ppm/V
Iload = 4 mA - 100 -
ppm/
Iload_reg Load regulation 500 µA ≤ ILOAD ≤ 4 mA Normal mode - 50 -
mA
Tcoeff
ppm/
Tcoeff Temperature coefficient −40 °C < TJ < +130 °C - - VREFINT
°C
+ 100
DC - - 60 -
PSRR Power supply rejection dB
100KHz - - 40 -
216/282 DS13311 Rev 3

Table 92. VREFBUF characteristics(1) (continued)

CL=0.5 µF - - 300 -
tSTART Start-up time CL=1 µF - - 500 - µs
CL=1.5 µF - - 650 -
Control of maximum
DC current drive on
IINRUSH - - 8 - mA
VREFBUF_OUT during
startup phase(3)
ILOAD = 0 µA - - 15 25
VREFBUF
IDDA
consumption from ILOAD = 500 µA - - 16 30 µA
(VREFBUF) VDDA
ILOAD = 4 mA - - 32 50
2. In degraded mode, the voltage reference buffer cannot accurately maintain the output voltage (VDDA−drop voltage).
3. To properly control VREFBUF IINRUSH current during the startup phase and the change of scaling, VDDA voltage should be in
the range of 1.8 V-3.6 V, 2.1 V-3.6 V, 2.4 V-3.6 V and 2.8 V-3.6 V for VSCALE = 011, 010, 001 and 000, respectively.
6.3.26 Analog temperature sensor characteristics
Table 93. Temperature sensor characteristics

TL(1) VSENSE linearity with temperature - - ±3 °C

(2)
Avg_Slope Average slope - 2 - mV/°C
V30(3) Voltage at 30°C ± 5 °C - 0.62 - V
tstart_run Startup time in Run mode (buffer startup) - - 25.2
µs
(1)
tS_temp ADC sampling time when reading the temperature 9 - -
Isens(1) Sensor consumption - 0.18 0.31
µA
Isensbuf(1) Sensor buffer consumption - 3.8 6.5
3. Measured at VDDA = 3.3 V ± 10 mV. The V30 ADC conversion result is stored in the TS_CAL1
byte.
Table 94. Temperature sensor calibration values

Symbol Parameter Memory address
Temperature sensor raw data acquired value at

TS_CAL1 0x1FF1 E820 -0x1FF1 E821
30 °C, VDDA=3.3 V
Temperature sensor raw data acquired value at
TS_CAL2 0x1FF1 E840 - 0x1FF1 E841
130 °C, VDDA=3.3 V
DS13311 Rev 3 217/282

250
6.3.27 Digital temperature sensor characteristics
Table 95. Digital temperature sensor characteristics(1)

fDTS(2) Output Clock frequency - 500 750 1150 kHz

Hz/°
TLC(2) Temperature linearity coefficient VOS2 1660 2100 2750
C
TJ = −40°C to
−13 - 4
TTOTAL_ERROR Temperature offset 30°C
(2) °C
measurement, all VOS TJ = 30°C to
−7 - 2
Tjmax
VOS2 0 - 0
Additional error due to supply
TVDD_CORE VOS0, VOS1, °C
variation −1 - 1
VOS3
tTRIM Calibration time - - - 2 ms
Wake-up time from off state until
tWAKE_UP - - 67 116.00 μs
DTS ready bit is set
DTS consumption on
IDDCORE_DTS - 8.5 30 70.0 μA
VDD_CORE
6.3.28 Temperature and VBAT monitoring
Table 96. VBAT monitoring characteristics

R Resistor bridge for VBAT - 26 - KΩ

Q Ratio on VBAT measurement - 4 - -
(1)
Er Error on Q –10 - +10 %
tS_vbat(1) ADC sampling time when reading VBAT input 9 - - µs
VBAThigh High supply monitoring - 3.55 -
V
VBATlow Low supply monitoring - 1.36 -
Table 97. VBAT charging characteristics

VBRS in PWR_CR3= 0 - 5 -
RBC Battery charging resistor KΩ
VBRS in PWR_CR3= 1 1.5 -
218/282 DS13311 Rev 3

Table 98. Temperature monitoring characteristics

TEMPhigh High temperature monitoring - 117 -

°C
TEMPlow Low temperature monitoring - –25 -
6.3.29 Voltage booster for analog switch
Table 99. Voltage booster for analog switch characteristics(1)

VDD Supply voltage - 1.62 2.6 3.6 V

tSU(BOOST) Booster startup time - - - 50 µs
1.62 V ≤ VDD ≤ 2.7 V - - 125
IDD(BOOST) Booster consumption µA
2.7 V < VDD < 3.6 V - - 250
6.3.30 Comparator characteristics
Table 100. COMP characteristics(1)

VDDA Analog supply voltage - 1.62 3.3 3.6

Comparator input voltage
VIN - 0 - VDDA V
range
(2)
VBG Scaler input voltage -
VSC Scaler offset voltage - - ±5 ±10 mV
Scaler static consumption BRG_EN=0 (bridge disable) - 0.2 0.3

IDDA(SCALER) µA
from VDDA BRG_EN=1 (bridge enable) - 0.8 1
tSTART_SCALER Scaler startup time - - 140 250 µs
High-speed mode - 2 5
Comparator startup time to
tSTART reach propagation delay Medium mode - 5 20 µs
specification
Ultra-low-power mode - 15 80
High-speed mode - 50 80 ns
Propagation delay for
200 mV step with 100 mV Medium mode - 0.5 0.9
overdrive µs
Ultra-low-power mode - 2.5 7
(3)
tD
Propagation delay for step High-speed mode - 50 120 ns
> 200 mV with 100 mV
Medium mode - 0.5 1.2
overdrive only on positive µs
inputs Ultra-low-power mode - 2.5 7
Voffset Comparator offset error Full common mode range - ±5 ±20 mV
DS13311 Rev 3 219/282

250
Table 100. COMP characteristics(1) (continued)

No hysteresis - 0 -
Low hysteresis 4 10 22
Vhys Comparator hysteresis mV
Medium hysteresis 8 20 37
High hysteresis 16 30 52
Static - 400 600
Ultra-low- With 50 kHz nA
power mode ±100 mV overdrive - 800 -
square signal
Static - 5 7
Comparator consumption
IDDA(COMP) Medium mode With 50 kHz
from VDDA ±100 mV overdrive - 6 -
square signal
µA
Static - 70 100
High-speed With 50 kHz
mode ±100 mV overdrive - 75 -
square signal
2. Refer to Table 21: Embedded reference voltage.
6.3.31 Operational amplifier characteristics
Table 101. Operational amplifier characteristics(1)

Analog supply voltage

VDDA - 2 3.3 3.6
Range
V
Common Mode Input
CMIR - 0 - VDDA
Range
25°C, no load on output - - ±1.5
VIOFFSET Input offset voltage All voltages and mV
- - ±2.5
temperature, no load
ΔVIOFFSET Input offset voltage drift - - ±3.0 - μV/°C
Offset trim step at low
TRIMOFFSETP
common input voltage - - 1.1 1.5
TRIMLPOFFSETP (0.1*VDDA)
mV
Offset trim step at high
TRIMOFFSETN
common input voltage - - 1.1 1.5
TRIMLPOFFSETN (0.9*VDDA)
ILOAD Drive current - - - 500
μA
ILOAD_PGA Drive current in PGA mode - - - 270
220/282 DS13311 Rev 3

Table 101. Operational amplifier characteristics(1) (continued)

CLOAD Capacitive load - - - 50 pF

Common mode rejection
CMRR - - 80 - dB
ratio
CLOAD ≤ 50pf /
Power supply rejection
PSRR RLOAD ≥ 4 kΩ(2) at 1 kHz, 50 66 - dB
ratio
Vcom=VDDA/2
Gain bandwidth for high 200 mV ≤ Output dynamic
GBW 4 7.3 12.3 MHz
supply range range ≤ VDDA - 200 mV
Slew rate (from 10% and Normal mode - 3 -

SR V/µs
90% of output voltage) High-speed mode - 24 -
200 mV ≤ Output dynamic
AO Open loop gain 59 90 129 dB
range ≤ VDDA - 200 mV
φm Phase margin - - 55 - °
GM Gain margin - - 12 - dB
Iload=max or RLOAD=min, VDDA
VOHSAT High saturation voltage - -
Input at VDDA −100 mV
mV
Iload=max or RLOAD=min,
VOLSAT Low saturation voltage - - 100
Input at 0 V
CLOAD ≤ 50pf,
Normal RLOAD ≥ 4 kΩ,
- 0.8 3.2
mode follower
Wake up time from OFF configuration
tWAKEUP µs
state CLOAD ≤ 50pf,
High
RLOAD ≥ 4 kΩ,
speed - 0.9 2.8
follower
mode
configuration
PGA gain = 2 −1 - 1
Non inverting gain error PGA gain = 4 −2 - 2

value PGA gain = 8 −2.5 - 2.5
PGA gain = 16 −3 - 3
PGA gain = 2 −1 - 1
PGA gain = 4 −1 - 1
PGA gain Inverting gain error value %
PGA gain = 8 −2 - 2
PGA gain = 16 −3 - 3
PGA gain = 2 −1 - 1
External non-inverting gain PGA gain = 4 −3 - 3

error value PGA gain = 8 −3.5 - 3.5
PGA gain = 16 −4 - 4
DS13311 Rev 3 221/282

250
Table 101. Operational amplifier characteristics(1) (continued)

PGA Gain=2 - 10/10 -

R2/R1 internal resistance PGA Gain=4 - 30/10 -
values in non-inverting
PGA mode(3) PGA Gain=8 - 70/10 -
PGA Gain=16 - 150/10 - kΩ/
Rnetwork
PGA Gain = -1 - 10/10 - kΩ
R2/R1 internal resistance PGA Gain = -3 - 30/10 -
values in inverting PGA
mode(3) PGA Gain = -7 - 70/10 -
PGA Gain = -15 - 150/10 -
Resistance variation (R1
Delta R - −15 - 15 %
or R2)
Gain=2 - GBW/2 -
PGA bandwidth for Gain=4 - GBW/4 -

MHz
different non inverting gain Gain=8 - GBW/8 -
Gain=16 - GBW/16 -
PGA BW
Gain = -1 - 5.00 -
PGA bandwidth for Gain = -3 - 3.00 -

MHz
different inverting gain Gain = -7 - 1.50 -
Gain = -15 - 0.80 -
at
- 140 -
1 KHz output loaded nV/√
en Voltage noise density
at with 4 kΩ Hz
- 55 -
10 KHz
Normal
- 570 1000
mode no Load,
OPAMP consumption from
IDDA(OPAMP) High- quiescent mode, µA
VDDA
speed follower - 610 1200
mode
2. RLOAD is the resistive load connected to VSSA or to VDDA.
3. R2 is the internal resistance between the OPAMP output and th OPAMP inverting input. R1 is the internal resistance
between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1.
222/282 DS13311 Rev 3

6.3.32 Digital filter for Sigma-Delta Modulators (DFSDM) characteristics

Unless otherwise specified, the parameters given in Table 102 for DFSDM are derived from
tests performed under the ambient temperature, fPCLKx frequency and supply voltage
conditions summarized in Table 13: General operating conditions.
function characteristics (DìFSDM_CKINx, DFSDM_DATINx, DFSDM_CKOUT for DFSDM).
Table 102. DFSDM measured timing

DFSDM
fDFSDMCLK 1.62 < VDD < 3.6 V - - fSYSCLK
clock
SPI mode
(SITP[1:0] = 0,1),
- - 20
External clock mode
fCKIN Input clock (SPICKSEL[1:0] = 0)
MHz
(1/TCKIN) frequency SPI mode
(SITP[1:0] = 0,1),
- - 20
Internal clock mode
(SPICKSEL[1:0] # 0)
Output clock
fCKOUT 1.62 < VDD < 3.6 V - - 20
frequency
Even
division,
45 50 55
CKOUTDIV
Output clock = n, 1, 3, 5..
1.62 < VDD
DuCyCKOUT frequency %
< 3.6 V Odd
duty cycle
division, (((n/2+1)/(n+1)) (((n/2+1)/(n+1)) (((n/2+1)/(n+1))
CKOUTDIV *100)−5 *100) *100)+5
= n, 2, 4, 6..
DS13311 Rev 3 223/282

250
Table 102. DFSDM measured timing (continued)

SPI mode
Input clock
twh(CKIN) (SITP[1:0] = 0,1),
high and low TCKIN/2−0.5 TCKIN/2 -
twl(CKIN) External clock mode
time
(SPICKSEL[1:0] = 0)
SPI mode
Data input (SITP[1:0] = 0,1),
tsu 2 - -
setup time External clock mode
(SPICKSEL[1:0] = 0)
ns
SPI mode
Data input (SITP[1:0] = 0,1),
th 1 - -
hold time External clock mode
(SPICKSEL[1:0] = 0)
Manchester Manchester mode
data period (SITP[1:0] = 2,3), (CKOUTDIV+1) (2*CKOUTDIV)
TManchester -
(recovered Internal clock mode * TDFSDMCLK * TDFSDMCLK
clock period) (SPICKSEL[1:0] # 0)
224/282 DS13311 Rev 3

Figure 51. Channel transceiver timing diagrams
DFSDM_CKINy
(SPICKSEL=0)
SPI timing : SPICKSEL = 0
twl twh tr tf
tsu th
DFSDM_DATINy
SITP = 00
tsu th
SITP = 01
SPICKSEL=3
DFSDM_CKOUT
SPICKSEL=2
SPI timing : SPICKSEL = 1, 2, 3
SPICKSEL=1
twl twh tr tf
tsu th
DFSDM_DATINy
SITP = 0
tsu th
SITP = 1
SITP = 2
DFSDM_DATINy
Manchester timing
SITP = 3
recovered clock
recovered data 0 0 1 1 0
MS30766V2
DS13311 Rev 3 225/282

250
6.3.33 Camera interface (DCMI) timing specifications

Unless otherwise specified, the parameters given in Table 103 for DCMI are derived from
tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage
summarized in Table 13: General operating conditions, with the following configuration:
• DCMI_PIXCLK polarity: falling
• DCMI_VSYNC and DCMI_HSYNC polarity: high
• Data formats: 14 bits
• Capacitive load CL=30 pF
Table 103. DCMI characteristics(1)

- Frequency ratio DCMI_PIXCLK/fHCLK - 0.4 -

DCMI_PIXCLK Pixel Clock input - 110 MHz
Dpixel Pixel Clock input duty cycle 30 70 %
tsu(DATA) Data input setup time 2 -
th(DATA) Data hold time 1 -
tsu(HSYNC), ns
DCMI_HSYNC/ DCMI_VSYNC input setup time 2 -
tsu(VSYNC)
th(HSYNC),
DCMI_HSYNC/ DCMI_VSYNC input hold time 1 -
th(VSYNC)
Figure 52. DCMI timing diagram
1/DCMI_PIXCLK
DCMI_PIXCLK
tsu(HSYNC) th(HSYNC)
DCMI_HSYNC
tsu(VSYNC) th(HSYNC)
DCMI_VSYNC
tsu(DATA) th(DATA)
DATA[0:13]
MS32414V2
226/282 DS13311 Rev 3

6.3.34 Parallel synchronous slave interface (PSSI) characteristics

Unless otherwise specified, the parameters given in Table 104 and Table 105 for PSSI are
derived from tests performed under the ambient temperature, fHCLK frequency and VDD
supply voltage summarized in Table 13: General operating conditions.
Table 104. PSSI transmit characteristics(1)

Frequency ratio
- - 0.4 -
PSSI_PDCK/fHCLK
- 50
PSSI_PDCK PSSI Clock input MHz
- 35(2)
Dpixel PSSI Clock input duty cycle 30 70 %
tov(DATA) Data output valid time - 10
- - - 14(2)
toh(DATA) Data output hold time 4.5 -
tov((DE) DE output valid time - 10 ns
toh(DE) DE output hold time 4 -
tsu(RDY) RDY input setup time 0 -
th(RDY) RDY input hold time 0 -
2. This value is obtained by using PA9, PA10 or PH4 I/O.
Table 105. PSSI receive characteristics(1)

Frequency ratio
- - 0.4 -
PSSI_PDCK/fHCLK
PSSI_PDCK PSSI Clock input - 110 MHz
Dpixel PSSI Clock input duty cycle 30 70 %
tsu(DATA) Data input setup time 1.5 -
th(DATA) Data input hold time 0.5 -
tsu((DE) DE input setup time 2 -
ns
th(DE) DE input hold time 1 -
tov(RDY) RDY output valid time - 15
toh(RDY) RDY output hold time 5.5 -
DS13311 Rev 3 227/282

250
6.3.35 LCD-TFT controller (LTDC) characteristics

Unless otherwise specified, the parameters given in Table 106 for LCD-TFT are derived
from tests performed under the ambient temperature, fHCLK frequency and VDD supply
voltage summarized in Table 13: General operating conditions, with the following
configuration:
• LCD_CLK polarity: high
• LCD_DE polarity: low
• LCD_VSYNC and LCD_HSYNC polarity: high
• Pixel formats: 24 bits
Table 106. LTDC characteristics(1)

2.7<VDD<3.6 V, 20 pF 150
LTDC clock
fCLK output 2.7<VDD<3.6 V - 133 MHz
frequency
1.62<VDD<3.6 V 90/76.5(2)
DCLK LTDC clock output duty cycle 45 55 %
tw(CLKH),
Clock High time, low time tw(CLK)//2−0.5 tw(CLK)/2+0.5
tw(CLKL)
2.7<VDD<3.6 V 2.0
tv(DATA) Data output valid time -
1.62<VDD<3.6 V 2.5/6.5(2)
th(DATA) Data output hold time 0 -
ns
tv(HSYNC), 2.7<VDD<3.6 V - 1.5
HSYNC/VSYNC/DE output
tv(VSYNC),
valid time 1.62<VDD<3.6 V - 2.0
tv(DE)
th(HSYNC),
th(VSYNC), HSYNC/VSYNC/DE output hold time 0 -
th(DE)
2. This value is valid when PA[9], PA[10], PA[11], PA[12], PA[15], PB[11], PH[4], PJ[8], PJ[9], PJ[10], PJ[11], PK[0], PK[1] or
PK[2] is used.
228/282 DS13311 Rev 3

Figure 53. LCD-TFT horizontal timing diagram
tCLK
LCD_CLK
LCD_VSYNC
tv(HSYNC) tv(HSYNC)
LCD_HSYNC
tv(DE) th(DE)
LCD_DE
tv(DATA)
LCD_R[0:7]
LCD_G[0:7] Pixel Pixel Pixel
1 2 N
LCD_B[0:7]
th(DATA)
HSYNC Horizontal Active width Horizontal

width back porch back porch
One line
MS32749V1
Figure 54. LCD-TFT vertical timing diagram
tCLK
LCD_CLK
tv(VSYNC) tv(VSYNC)
LCD_VSYNC
LCD_R[0:7]
LCD_G[0:7] M lines data
LCD_B[0:7]
VSYNC Vertical Active width Vertical

width back porch back porch
One frame
MS32750V1
DS13311 Rev 3 229/282

250
6.3.36 Timer characteristics

The parameters given in Table 107 are guaranteed by design.
Refer to Section 6.3.17: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 107. TIMx characteristics(1)(2)

AHB/APBx prescaler=1
or 2 or 4, fTIMxCLK = 1 - tTIMxCLK
275 MHz
tres(TIM) Timer resolution time
AHB/APBx
prescaler>4, fTIMxCLK = 1 - tTIMxCLK
137.5 MHz
Timer external clock
fEXT 0 fTIMxCLK/2 MHz
frequency on CH1 to CH4 f
TIMxCLK = 240 MHz
ResTIM Timer resolution - 16/32 bit
Maximum possible count 65536 ×
tMAX_COUNT - - tTIMxCLK
with 32-bit counter 65536
1. TIMx is used as a general term to refer to the TIM1 to TIM17 timers.
3. The maximum timer frequency on APB1 or APB2 is up to 275 MHz, by setting the TIMPRE bit in the
RCC_CFGR register, if APBx prescaler is 1 or 2 or 4, then TIMxCLK = rcc_hclk1, otherwise TIMxCLK = 4x
Frcc_pclkx1 or TIMxCLK = 4x Frcc_pclkx2.
6.3.37 Low-power timer characteristics

The parameters given in Table 108 are guaranteed by design.
Refer to Section 6.3.17: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 108. LPTIMx characteristics(1)(2)

tres(TIM) Timer resolution time 1 - tTIMxCLK
fLPTIMxCLK Timer kernel clock 0 137.5

Timer external clock frequency on Input1 and MHz
fEXT 0 fLPTIMxCLK/2
Input2
ResTIM Timer resolution - 16 bit
tMAX_COUNT Maximum possible count - 65536 tTIMxCLK
1. LPTIMx is used as a general term to refer to the LPTIM1 to LPTIM5 timers.

230/282 DS13311 Rev 3

6.3.38 Communication interfaces

I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual revision 03 for:
• Standard-mode (Sm): with a bit rate up to 100 kbit/s
• Fast-mode (Fm): with a bit rate up to 400 kbit/s
• Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The I 2Ctimings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to RM0399 reference manual) and when the i2c_ker_ck frequency is
greater than the minimum shown in the table below:
Table 109. Minimum i2c_ker_ck frequency in all I2C modes

Symbol Parameter Condition Min Unit
Standard-mode - 2
Analog Filtre ON
8
DNF=0
Fast-mode
Analog Filtre OFF MHz
I2CCLK 9
f(I2CCLK) DNF=1
frequency
Analog Filtre ON
17
DNF=0
Fast-mode Plus
Analog Filtre OFF
16 -
DNF=1
The SDA and SCL I/O requirements are met with the following restrictions:
• The SDA and SCL I/O pins are not “true” open-drain. When configured as open-drain,
the PMOS connected between the I/O pin and VDD is disabled, but still present.
• The 20 mA output drive requirement in Fast-mode Plus is not supported. This limits the
maximum load CLoad supported in Fm+, which is given by these formulas:
tr(SDA/SCL)=0.8473xRP * CLoad
RP(min)= (VDD-VOL(max))/IOL(max)
Where RP is the I2C lines pull-up. Refer to Section 6.3.17: I/O port characteristics for
the I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog fil-
ter characteristics:
Table 110. I2C analog filter characteristics(1)

Maximum pulse width of spikes

tAF that are suppressed by analog 50(2) 80(3) ns
filter
2. Spikes with widths below tAF(min) are filtered.
DS13311 Rev 3 231/282

250
3. Spikes with widths above tAF(max) are not filtered.
USART interface characteristics

Unless otherwise specified, the parameters given in Table 111 for USART are derived from
tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 13: General operating conditions, with the following
configuration:
function characteristics (NSS, CK, TX, RX for USART).
Table 111. USART characteristics(1)

Master mode,
17.0
1.62 V < VDD < 3.6 V
- -
Slave receiver mode,
45.0
1.62 V < VDD < 3.6 V
fCK USART clock frequency MHz
Slave transmitter mode,
27.0
1.62 V < VDD < 3.6 V
- -
Slave transmitter mode,
37.0
2.5 V < VDD < 3.6 V
tsu(NSS) NSS setup time Slave mode tker+1 - -
th(NSS) NSS hold time Slave mode 2 - -
tw(SCKH),
CK high and low time Master mode 1/fCK/2-2 1/fCK/2 1/fCK/2+2
tw(SCKL)
Master mode 16 - -
tsu(RX) Data input setup time
Slave mode 1.0 - -
Master mode 0 - -
th(RX) Data input hold time
Slave mode 2.0 - - ns
Slave mode, ,
- 12.0 18
1.62 V < VDD < 3.6 V
tv(TX) Data output valid time Slave mode, ,
- 12.0 13.5
2.5 V < VDD < 3.6 V
Master mode - 0.5 1
Slave mode 9 - -
th(TX) Data output hold time
Master mode 0 - -
232/282 DS13311 Rev 3

Figure 55. USART timing diagram in Master mode
1/fCK
CK output
CPHA = 0
CPOL = 0
CPHA = 0
CK output CPOL = 1
CPHA = 1
CPOL = 0
CPHA = 1
CPOL = 1
tw(CKH)
tsu(RX) tw(CKL)
RX
INPUT MSB IN BIT6 IN LSB IN
th(RX)
TX
OUTPUT MSB OUT BIT1 OUT LSB OUT
tv(TX) th(TX)
MSv65386V4
1. Measurement points are done at 0.5VDD and with external CL = 30 pF.
Figure 56. USART timing diagram in Slave mode
NSS
input
1/fCK th(NSS)
tsu(NSS) tw(CKH)
CPHA = 0
CK input
CPOL = 0
CPHA = 0
CPOL = 1
tw(CKL) tv(TX) th(TX)
TX output First bit OUT Next bits OUT Last bit OUT
th(RX)
tsu(RX)
RX input First bit IN Next bits IN Last bit IN

MSv65387V4
DS13311 Rev 3 233/282

250
SPI interface characteristics

Unless otherwise specified, the parameters given in Table 112 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
configuration:
function characteristics (NSS, SCK, MOSI, MISO for SPI).
Table 112. SPI characteristics(1)(2)

Master mode,
125
2.7 V < VDD < 3.6 V, SPI1, 2, 3
Master mode,
1.62 V < VDD < 3.6 V, SPI1, 2, 80/66(3)
3
Master mode,
1.62 V < VDD < 3.6 V, SPI4, 5, 68.5
6
fSCK SPI clock frequency - - MHz
1.62 V < VDD < 3.6 V, SPI1, 2, 100
3
1.62 V < VDD < 3.6 V, SPI4, 5, 68.5
6
Slave mode transmitter/full
45
duplex, 2.7 V < VDD < 3.6 V
Slave mode transmitter/full
42.5/31(4)
duplex, 1.62 V < VDD < 3.6 V
tsu(NSS) NSS setup time Slave mode 2 - -
th(NSS) NSS hold time Slave mode 1 - -
-
tw(SCKH),
SCK high and low time Master mode tSCK /2-1(5) tSCK/2(5) tSCK /2+1(5)
tw(SCKL)
234/282 DS13311 Rev 3

Table 112. SPI characteristics(1)(2) (continued)

tsu(MI) Master mode 2.5 - -

tsu(SI) Slave mode 1 - -
th(MI) Master mode 3 - -
th(SI) Slave mode 1.5 - -
ta(SO) Data output access time Slave mode 9 13 27
tdis(SO) Data output disable time Slave mode 0 1 5
Slave mode, ns
- 7.5 11
2.7 V < VDD < 3.6 V
tv(SO)
Slave mode,
Data output valid time - 7.5 12/16(4)
1.62 V < VDD < 3.6 V
Master mode,
tv(MO) - 1 1.5/5.5(6)
1.62 V < VDD < 3.6 V
th(SO) Slave mode 7 - -
Data output hold time
th(MO) Master mode 0.5 - -
2. The values given in the above table might be degraded when PC3_C/PC2_C I/Os are used (not available on all packages).
3. This value is obtained by using PA9 or PA12 I/O.
4. This value is obtained by using PC2 or PJ11 I/O.
5. tSCK = tker_ck * baud rate prescaler.
6. This value is obtained by using PC3 or PJ10 I/O.
Figure 57. SPI timing diagram - slave mode and CPHA = 0
NSS input
tc(SCK) th(NSS)
tsu(NSS) tw(SCKH) tr(SCK)

CPHA=0
SCK input
CPOL=0
CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tf(SCK) tdis(SO)
MISO output First bit OUT Next bits OUT Last bit OUT
th(SI)
tsu(SI)
MOSI input First bit IN Next bits IN Last bit IN
MSv41658V1
DS13311 Rev 3 235/282

250
Figure 58. SPI timing diagram - slave mode and CPHA = 1(1)
NSS input
tc(SCK)
tsu(NSS) tw(SCKH) tf(SCK) th(NSS)

CPHA=1
SCK input
CPOL=0
CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tr(SCK) tdis(SO)
MISO output First bit OUT Next bits OUT Last bit OUT
tsu(SI) th(SI)
MOSI input First bit IN Next bits IN Last bit IN
MSv41659V1
Figure 59. SPI timing diagram - master mode(1)
High
NSS input
tc(SCK)
SCK Output
CPHA= 0
CPOL=0
CPHA= 0
CPOL=1
SCK Output
CPHA=1
CPOL=0
CPHA=1
CPOL=1
tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INP UT MSB IN BIT6 IN LSB IN
th(MI)
MOSI
MSB OUT B I T1 OUT LSB OUT
OUTPUT
tv(MO) th(MO)
ai14136c
236/282 DS13311 Rev 3

I2S Interface characteristics

Unless otherwise specified, the parameters given in Table 113 for I2S are derived from tests
configuration:
function characteristics (CK,SD,WS).
Table 113. I2S dynamic characteristics(1)

Symbol Parameter Conditions Min Max Unit
- - 50
Master transmitter - 50/40(2)
fMCK I2S main clock output Master receiver - 50/40(2) MHz
Slave transmitter - 41.5/31(3)
Slave receiver - 50
tv(WS) WS valid time - 2/6(4)
Master mode
th(WS) WS hold time 1 -
tsu(WS) WS setup time 3 -
Slave mode
th(WS) WS hold time 1 -
tsu(SD_MR) Master receiver 2.5 -
tsu(SD_SR) Slave receiver 1 -
th(SD_MR) Master receiver 3 -
th(SD_SR) Slave receiver 1.5 - ns
Slave transmitter (after enable

tv(SD_ST) - 12/16(3)
edge)
Data output valid time
Master transmitter (after
tv(SD_MT) - 2/6(5)
enable edge)
Slave transmitter (after enable
th(SD_ST) 6.5 -
edge)
Data output hold time
Master transmitter (after
th(SD_MT) 0.5 -
enable edge)
2. This value is obtained when PA9 or PA12 are used.
3. This value is obtained when PC2 is used.
4. This value is obtained when PA11 or PA15 are used.
DS13311 Rev 3 237/282

250
5. This value is obtained when PC3 is used.
Figure 60. I2S slave timing diagram (Philips protocol)(1)
1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
Figure 61. I2S master timing diagram (Philips protocol)(1)
1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
238/282 DS13311 Rev 3

SAI characteristics
Unless otherwise specified, the parameters given in Table 114 for SAI are derived from tests
configuration:
Refer to Section 6.3.17: I/O port characteristics for more details on the input/output
alternate function characteristics (SCK,SD,WS).
Table 114. SAI characteristics(1)

fMCK SAI Main clock output - - 50

Master transmitter, 2.7 V ≤ VDD ≤ 3.6 V - 45
Master transmitter, 1.62 V ≤ VDD ≤ 3.6 V - 32
Master receiver, 1.62 V ≤ VDD ≤ 3.6 V - 32 MHz
fCK SAI clock frequency(2)
Slave transmitter, 2.7 V ≤ VDD ≤ 3.6 V - 47.5
Slave transmitter, 1.62 V ≤ VDD ≤ 3.6 V - 41.5
Slave receiver, 1.62 V ≤ VDD ≤ 3.6 V - 50
DS13311 Rev 3 239/282

250
Table 114. SAI characteristics(1) (continued)

Master mode, 2.7 V ≤ VDD ≤ 3.6 V - 11

tv(FS) FS valid time
Master mode, 1.62 V ≤ VDD ≤ 3.6 V - 15.5
tsu(FS) FS setup time Slave mode 2.5 -
Master mode 6 -
th(FS) FS hold time
Slave mode 0.5 -
tsu(SD_A_MR) Master receiver 3 -
tsu(SD_B_SR) Slave receiver 3.5 -
th(SD_A_MR) Master receiver 3.5 -
th(SD_B_SR) Slave receiver 0 -
ns
Slave transmitter (after enable edge),
- 10.5
2.7 V ≤ VDD ≤ 3.6 V
tv(SD_B_ST) Data output valid time
Slave transmitter (after enable edge),
- 12
1.62 V ≤ VDD ≤ 3.6 V
th(SD_B_ST) Data output hold time Slave transmitter (after enable edge) 6.5 -
Master transmitter (after enable edge),
- 10.5
2.7 V ≤ VDD ≤ 3.6 V
tv(SD_A_MT) Data output valid time
Master transmitter (after enable edge),
- 14.5
1.62 V ≤ VDD ≤ 3.6 V
th(SD_A_MT) Data output hold time Master transmitter (after enable edge) 6 -
2. APB clock frequency must be at least twice SAI clock frequency.
Figure 62. SAI master timing waveforms

1/fSCK
SAI_SCK_X
th(FS)
SAI_FS_X
(output) tv(FS) tv(SD_MT) th(SD_MT)
SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_MR) th(SD_MR)
SAI_SD_X Slot n
(receive)
MS32771V1
240/282 DS13311 Rev 3

Figure 63. SAI slave timing waveforms

1/fSCK
SAI_SCK_X
tw(CKH_X) tw(CKL_X) th(FS)
SAI_FS_X
(input) tsu(FS) tv(SD_ST) th(SD_ST)
SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_SR) th(SD_SR)
SAI_SD_X Slot n
(receive)
MS32772V1
MDIO characteristics
Unless otherwise specified, the parameters given in Table 115 for the MDIO are derived
from tests performed under the ambient temperature, fPCLKx frequency and VDD supply
voltage conditions summarized in Table 13: General operating conditions, with the following
configuration:
• I/O Compensation cell activated.
Table 115. MDIO Slave timing parameters

FMDC Management Data Clock - - 30 MHz

td(MDIO) Management Data Iput/output output valid time 8 10 18
tsu(MDIO) Management Data Iput/output setup time 1 - - ns
th(MDIO) Management Data Iput/output hold time 1 - -
DS13311 Rev 3 241/282

250
Figure 64. MDIO Slave timing diagram

tMDC)
td(MDIO)
tsu(MDIO) th(MDIO)
MSv40460V1
SD/SDIO MMC card host interface (SDMMC) characteristics

Unless otherwise specified, the parameters given in Table 116 and Table 117 for SDIO are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage summarized in Table 13: General operating conditions, with the following
configuration:
characteristics.
Table 116. Dynamics characteristics: SD / MMC characteristics, VDD = 2.7 to 3.6 V(1)(2)
Clock frequency in data transfer

fPP - 0 - 120 MHz
mode
- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time 8.5 9.5 -
fPP =52MHz ns
tW(CKH) Clock high time 8.5 9.5 -
CMD, D inputs (referenced to CK) in eMMC legacy/SDR/DDR and SD HS/SDR/DDR mode
tISU Input setup time HS - 2.5 - -

tIH Input hold time HS - 0.5 - - ns
(3)
tIDW Input valid window (variable window) - 1.5 - -
CMD, D outputs (referenced to CK) in eMMC legacy/SDR/DDR and SD HS/SDR/DDR mode
tOV Output valid time HS - - 5.5 6

ns
tOH Output hold time HS - 4.5 - -
242/282 DS13311 Rev 3

Table 116. Dynamics characteristics: SD / MMC characteristics, VDD = 2.7 to 3.6 V(1)(2)
CMD, D inputs (referenced to CK) in SD default mode
tISUD Input setup time SD - 1.5 -

ns
tIHD Input hold time SD - 0.5 -
CMD, D outputs (referenced to CK) in SD default mode
tOVD Output valid default time SD - - 1 1

ns
tOHD Output hold default time SD - 0 - -
2. Above 100 MHz, CL = 20 pF.
3. The minimum window of time where the data needs to be stable for proper sampling in tuning mode.
Table 117. Dynamics characteristics: eMMC characteristics VDD = 1.71V to 1.9V(1)(2)

Clock frequency in data transfer

fPP - 0 - 85 MHz
mode
- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time 8.5 9.5 -
fPP =52 MHz ns
tW(CKH) Clock high time 8.5 9.5 -
CMD, D inputs (referenced to CK) in eMMC mode
tISU Input setup time HS - 1.5 - -

tIH Input hold time HS - 1.5 - -
ns
(3) Input valid window (variable
tIDW - 3.5 - -
window)
CMD, D outputs (referenced to CK) in eMMC mode
tOVD Output valid time HS - - 6 6.5

ns
tOHD Output hold time HS - 5.5 - -
2. CL = 20 pF.
3. The minimum window of time where the data needs to be stable for proper sampling in tuning mode.
DS13311 Rev 3 243/282

250
Figure 65. SD high-speed mode

tC(CK)
tW(CKH) tW(CKL)
CK
tOH
tOV
D, CMD output
tIH
tISU
D, CMD input
MSv69709V1
Figure 66. SD default mode
CK
tOV tOH
D, CMD output MSv69710V1
Figure 67. SDMMC DDR mode
D input Valid data Valid data
tISU tIH tISU tIH
tW(CKH)
CK
tW(CKL)
tOV tOV
tOH tOH
D output Valid data Valid data
MSv69158V1
USB OTG_FS characteristics

Unless otherwise specified, the parameters given in Table 119 for ULPI are derived from
244/282 DS13311 Rev 3

characteristics.
Table 118. USB OTG_FS electrical characteristics

VDD33US
USB transceiver operating voltage - 3.0(1) - 3.6 V
B
Embedded USB_DP pull-up value

RPUI - 900 1250 1600
during idle
Embedded USB_DP pull-up value
RPUR - 1400 2300 3200 Ω
during reception
Driver high
ZDRV Output driver impedance(2) 28 36 44
and low
1. The USB functionality is ensured down to 2.7 V. However, not all USB electrical characteristics are
degraded in the 2.7 to 3.0 V voltage range.
2. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching
impedance is already included in the embedded driver.
USB OTG_HS characteristics

Unless otherwise specified, the parameters given in Table 119 for ULPI are derived from
characteristics.
Table 119. Dynamics characteristics: USB ULPI(1)

Control in (ULPI_DIR , ULPI_NXT)

tSC - 5.5 - -
setup time
Control in (ULPI_DIR, ULPI_NXT) hold
tHC - 0 - -
time
tSD Data in setup time - 2.5 - -
ns
tHD Data in hold time - 0 - -
2.7 V < VDD < 3.6 V,
- 6.0 8.0
CL = 20 pF
tDC/tDD Control/Datal output delay
1.71 V < VDD < 3.6 V
- 6.0 12
, CL = 15 pF
DS13311 Rev 3 245/282

250
Figure 68. ULPI timing diagram
Clock
tSC tHC
Control In
(ULPI_DIR,
ULPI_NXT) tSD tHD
data In
(8-bit)
tDC tDC
Control out
(ULPI_STP)
tDD
data out
(8-bit)
ai17361c
Ethernet interface characteristics

Unless otherwise specified, the parameters given in Table 120, Table 121 and Table 122 for
SMI, RMII and MII are derived from tests performed under the ambient temperature,
frcc_c_ck frequency and VDD supply voltage conditions summarized in Table 13: General
operating conditions, with the following configuration:
characteristics:
Table 120. Dynamics characteristics: Ethernet MAC signals for SMI (1)
tMDC MDC cycle time( 2.5 MHz) 400 400 403

Td(MDIO) Write data valid time 0.5 1.5 4
ns
tsu(MDIO) Read data setup time 12.5 - -
th(MDIO) Read data hold time 0 - -
246/282 DS13311 Rev 3

Figure 69. Ethernet SMI timing diagram

tMDC
ETH_MDC
td(MDIO)
ETH_MDIO(O)
tsu(MDIO) th(MDIO)
ETH_MDIO(I)
MS31384V1
Table 121. Dynamics characteristics: Ethernet MAC signals for RMII (1)
tsu(RXD) Receive data setup time 2 - -

tih(RXD) Receive data hold time 2 - -
tsu(CRS) Carrier sense setup time 1.5 - -
ns
tih(CRS) Carrier sense hold time 1.5 - -
td(TXEN) Transmit enable valid delay time 8 0 10.5
td(TXD) Transmit data valid delay time 7 8 9.5
Figure 70. Ethernet RMII timing diagram
RMII_REF_CLK
td(TXEN)
td(TXD)
RMII_TX_EN
RMII_TXD[1:0]
tsu(RXD) tih(RXD)
tsu(CRS) tih(CRS)
RMII_RXD[1:0]
RMII_CRS_DV
ai15667b
DS13311 Rev 3 247/282

250
Table 122. Dynamics characteristics: Ethernet MAC signals for MII (1)
tsu(RXD) Receive data setup time 2.0 - -

tih(RXD) Receive data hold time 2.0 - -
tsu(DV) Data valid setup time 1.5 - -
tih(DV) Data valid hold time 1.5 - -
ns
tsu(ER) Error setup time 1.5 - -
tih(ER) Error hold time 0.5 - -
td(TXEN) Transmit enable valid delay time 9.0 11 19
td(TXD) Transmit data valid delay time 8.5 10 19
Figure 71. Ethernet MII timing diagram
MII_RX_CLK
tsu(RXD) tih(RXD)
tsu(ER) tih(ER)
tsu(DV) tih(DV)
MII_RXD[3:0]
MII_RX_DV
MII_RX_ER
MII_TX_CLK
td(TXEN)
td(TXD)
MII_TX_EN
MII_TXD[3:0]
ai15668b
JTAG/SWD interface characteristics

Unless otherwise specified, the parameters given in Table 123 and Table 124 for
JTAG/SWD are derived from tests performed under the ambient temperature, frcc_c_ck
frequency and VDD supply voltage summarized in Table 13: General operating conditions,
with the following configuration:
characteristics:
248/282 DS13311 Rev 3

Table 123. Dynamics JTAG characteristics

Fpp 2.7V <VDD< 3.6 V - - 37

TCK clock frequency
1/tc(TCK) 1.62 <VDD< 3.6 V - - 27.5
MHz
tisu(TMS) TMS input setup time - 2.5 - -
tih(TMS) TMS input hold time - 1 - -
tisu(TDI) TDI input setup time - 1.5 - - -
tih(TDI) TDI input hold time - 1 - - -
2.7V <VDD< 3.6 V - 8 13.5 -
tov(TDO) TDO output valid time
1.62 <VDD< 3.6 V - 8 18 -
toh(TDO) TDO output hold time - 7 - - -
Table 124. Dynamics SWD characteristics

Fpp 2.7V <VDD< 3.6 V - - 71

SWCLK clock frequency MHz
1/tc(SWCLK) 1.62 <VDD< 3.6 V - - 52.5
tisu(SWDIO) SWDIO input setup time - 2.5 - - -
tih(SWDIO) SWDIO input hold time - 1 - - -
2.7V <VDD< 3.6 V - 8.5 14 -
tov(SWDIO) SWDIO output valid time 1.62 <VDD< 3.6 V
- 8.5 19 -
toh(SWDIO) SWDIO output hold time - 8 - - -
Figure 72. JTAG timing diagram

tc(TCK)
TCK
tsu(TMS/TDI) th(TMS/TDI)
tw(TCKL) tw(TCKH)
TDI/TMS
tov(TDO) toh(TDO)
TDO
MSv40458V1
DS13311 Rev 3 249/282

250
Figure 73. SWD timing diagram
tc(SWCLK)
SWCLK
tsu(SWDIO) th(SWDIO) twSWCLKL) tw(SWCLKH)

SWDIO
(receive)
tov(SWDIO) toh(SWDIO)
SWDIO
(transmit)
MSv40459V1
250/282 DS13311 Rev 3

Package information STM32H725xE/G
7 Package information
In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at www.st.com. ECOPACK
is an ST trademark.
7.1 VFQFPN68 package information

This VFQFPN68 is a 68-pin, 8 x 8 mm, 0.4 mm pitch, very thin fine pitch quad flat package.
Figure 74. VFQFPN68 - Outline

PIN 1 IDENTIFIER
LASER MARKING ddd C
D
A
A1
68 67 A2
1
2
E E
(2X) 0.10 C
SEATING
C PLANE
TOP VIEW SIDE VIEW

L
D2
E2
2
1
PIN 1 ID
C 0.30 X 45'
68 67 b
e
EXPOSED PAD AREA
BOTTOM VIEW B029_VFQFPN68_ME_V1
1. VFQFPN stands for Thermally Enhanced Very thin Fine pitch Quad Flat Packages No lead. Sawed
version. Very thin profile: 0.80 < A ≤ 1.00mm.
2. The pin #1 identifier must be existed on the top surface of the package by using indentation mark or other
feature of package body. Exact shape and size of this feature is optional.
250/282 DS13311 Rev 3

STM32H725xE/G Package information
Table 125. VFQFPN68 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
A 0.80 0.90 1.00 0.0315 0.0354 0.0394

A1 0 0.02 0.05 0 0.0008 0.0020
A3 - 0.20 - - 0.0008 -
b 0.15 0.20 0.25 0.0059 0.0079 0.0098
D 7.85 8.00 8.15 0.3091 0.3150 0.3209
D2 6.30 6.40 6.50 0.2480 0.2520 0.2559
E 7.85 8.00 8.15 0.3091 0.3150 0.3209
E2 6.30 6.40 6.50 0.2480 0.2520 0.2559
e - 0.40 - - 0.0157 -
L 0.40 0.50 0.60 0.0157 0.0197 0.0236
ddd - - 0.08 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Figure 75. VFQFPN68 - Recommended footprint

8.30
7.00
6.65
0.15 6.40
6.65
7.00
8.30
6.40
0.25
0.82
0.65
0.40
B029_VFQFPN68_FP_V2
1. Dimensions are expressed in millimeters.
DS13311 Rev 3 251/282

279
Device marking for VFQFPN68

The following figure gives an example of topside marking versus ball A1 position identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.
Figure 76. VFQFPN68 marking example (package top view
STM32H725
Product
identification(1) RGV6 Revision code
R
Date code
Y WW
Ball A1
identifier
MSv53060V2
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.
252/282 DS13311 Rev 3

7.2 LQFP100 package information

This LQFP100 is a 100-pin, 14 x 14 mm low-profile quad flat package.
Figure 77. LQFP100- Outline
θ2 θ1
R1
H
R2
B
B-
N
O
(4)
TI
C
SE
D1/4 B GAUGE PLANE
S
E1/4
B θ
4x N/4 TIPS
θ3 L
4x L1
aaa C A-B D
bbb H A-B D
BOTTOM VIEW SECTION A-A
(N-4) x e
C
A
0.05
b ccc C b WITH PLATING
A2 A1 aaa C A-BD
SIDE VIEW
D c
D1 c1
D
(5) N
b1 BASE METAL
1
2
3 E1/4 SECTION B-B
D1/4 (4)
A B
E1 E
SECTION A-A
A A
TOP VIEW 1L_LQFP100_ME_V2
1. Drawing is not to scale.
DS13311 Rev 3 253/282

279
Table 126. LQFP100 - Mechanical data

Symbol
A - 1.50 1.60 - 0.0590 0.0630

(2)
A1 0.05 - 0.15 0.0019 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0570
(3)(4)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(4)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(4)
c 0.09 - 0.20 0.0035 - 0.0079
c1(4) 0.09 - 0.16 0.0035 - 0.0063
(5)
D 16.00 0.6299
(6)(7)
D1 14.00 0.5512
E(5) 16.00 0.6299
E1(6)(7) 14.00 0.5512
e - 0.50 - - 0.0197 -
L 0.45 0.60 0.75 0.177 0.0236 0.0295
(4)
L1 1.00 - 0.0394 -
N(8) 100
θ 0° 3.5° 7° 0° 3.5° 7°
θ1 0° - - 0° - -
θ2 10° 12° 14° 10° 12° 14°
θ3 10° 12° 14° 10° 12° 14°
R1 0.08 - - 0.0031 - -
R2 0.08 - 0.20 0.0031 - 0.0079
S 0.20 - - 0.0079 - -
aaa(9) 0.20 0.0079
bbb(9) 0.20 0.0079
(9)
ccc 0.08 0.0031
(9)
ddd 0.08 0.0031
2. A1 is defined as the distance from the seating plane to the lowest point on the package body.
3. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall not cause the lead
width to exceed the maximum “b” dimension by more than 0.08 mm. Dambar cannot be located on the
lower radius or the foot. Minimum space between protrusion and an adjacent lead is 0.07 mm for 0.4 mm
and 0.5 mm pitch packages.
4. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm from the lead tip.
5. To be determined at seating datum plane C.
6. The Top package body size may be smaller than the bottom package size by as much as 0.15 mm.
7. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash or protrusions is
“0.25 mm” per side. D1 and E1 are Maximum plastic body size dimensions including mold mismatch.
254/282 DS13311 Rev 3

8. “N” is the max number of terminal positions for the specified body size.
9. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
LQFP100 - Recommended footprint

75 51
76 50
0.5
0.3
16.7 14.3
100 26
1.2
1 25
12.3
16.7
1L_LQFP100_FP_V1
Dimensions are expressed in millimeters.
DS13311 Rev 3 255/282

279
Device marking for LQFP100

The following figure gives an example of topside marking versus pin 1 position identifier
location.
Figure 78. LQFP100 marking example (package top view)
Product identification(1)
STM32H725
VGT6 Revision code
R
Date code
Y WW
Pin 1
indentifier
MSv53062V3
256/282 DS13311 Rev 3

7.3 TFBGA100 package information

This TFBGA is 100 - ball, 8X8 mm, 0.8 mm pitch fine pitch ball grid array package.
Figure 79. TFBGA100 - Outline
ddd C
SEATING
PLANE
A1
A
A2
A1 ball
index
B
D1 A1 ball area
identifier
e D
F
A
B
C
G
D
E
E1
E
F
G
e
H A
J
K
10 9 8 7 6 5 4 3 2 1
BOTTOM VIEW TOP VIEW

b (100 BALLS)
eee C A B
fff C
A08Q_ME_V1
DS13311 Rev 3 257/282

279
Table 127. TFBGA100 - Mechanical data

Symbol
A - - 1.100 - - 0.0433
A1 0.150 - - 0.0059 - -
A2 - 0.760 - - 0.0299 -
b 0.350 0.400 0.450 0.0138 0.0157 0.0177
D 7.850 8.000 8.150 0.3091 0.3150 0.3209
D1 - 7.200 - 0.2835 -
E 7.850 8.000 8.150 0.3091 0.3150 0.3209
E1 - 7.200 - - 0.2835 -
e - 0.800 - - 0.0315 -
F - 0.400 - - 0.0157 -
G - 0.400 - - 0.0157 -
ddd - - 0.100 - - 0.0039
eee - - 0.150 - - 0.0059
fff - - 0.080 - - 0.0031
Figure 80. TFBGA100 - Recommended footprint
Dpad
Dsm
BGA_WLCSP_FT_V1
258/282 DS13311 Rev 3

Table 128. TFBGA100 - Recommended PCB design rules (0.8 mm pitch BGA)
Dimension Recommended values
Pitch 0.8
Dpad 0.400 mm
0.470 mm typ (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.400 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.120 mm
Device marking for TFBGA100

location.
Figure 81. TFBGA100 marking example (package top view)
Product
identification(1)
STM32H725 Revision code
VEH6
R
Date code
Ball Y WW
A1identifier
MSv65394V1
DS13311 Rev 3 259/282

279
7.4 WLCSP115 package information

This WLCSP is a 115-ball, 3.73 x 4.15 mm, 0.35 mm pitch, wafer level chip scale package.
Figure 82. WLCSP115 - Outline

bbb Z
A1 Ball location
A1
G
E e2
Detail B
F e1 A
D A2
aaa
BOTTOM VIEW SIDE VIEW
A3
e
e
Detail A
FRONT VIEW
e
Detail B
BUMP
A1 orientation reference eee Z
b (115x) Z
ccc Z X Y
ddd Z
Seating plane
TOP VIEW
Detail A
B08U_WLCSP115_ME_V1

2. Dimension is measured at the maximum bump diameter parallel to primary datum Z.
3. Primary datum Z and seating plane are defined by the spherical crowns of the bump.
4. Bump position designation per JESD 95-1, SPP-010.
260/282 DS13311 Rev 3

Table 129. WLCSP115 - Mechanical data

Symbol
A(2) - - 0.58 - - 0.023

A1 - 0.17 - - 0.007 -
A2 - 0.38 - - 0.015 -
(3)
A3 - 0.025 - - 0.001 -
b 0.21 0.24 0.27 0.008 0.009 0.011
D 3.71 3.73 3.75 0.146 0.147 0.148
E 4.13 4.15 4.17 0.163 0.163 0.164
e - 0.35 - - 0.014 -
e1 - 3.03 - - 0.119 -
e2 - 3.15 - - 0.124 -
F(4) - 0.36 - - 0.014 -
G(4) - 0.51 - - 0.020 -
aaa - - 0.10 - - 0.004
bbb - - 0.10 - - 0.004
ccc - - 0.10 - - 0.004
ddd - - 0.05 - - 0.002
eee - - 0.05 - - 0.002
2. The maximum total package height is calculated by the RSS method (Root Sum Square) using nominal
and tolerances values of A1 and A2.
3. Back side coating. Nominal dimension is rounded to the 3rd decimal place resulting from process
capability.
4. Calculated dimensions are rounded to the 3rd decimal place
Figure 83. WLCSP115 - Recommended footprint
Dpad
Dsm
BGA_WLCSP_FT_V1
DS13311 Rev 3 261/282

279
Table 130. WLCSP115 - Recommended PCB design rules

Pitch 0.35 mm
Dpad 0,225 mm
Dsm 0.250 mm typ. (depends on soldermask registration tolerance)
Stencil thickness 0.080 mm
Device marking for WLSCP115

location.
Figure 84. WLCSP115 marking example (package top view
Ball A1
identifier
STM32H725VGY6
Product
identification(1)
Date code Revision code
Y WW R
MSv53064V2
262/282 DS13311 Rev 3


This LQFP is a 144-pin, 20 x 20 mm low-profile quad flat package.
Figure 85. LQFP144 - Outline

SEATING
PLANE
C
A
A1
A2
c
0.25 mm
ccc C GAUGE PLANE
A1
D
L
K
D1
L1
D3
108 73
109
72
b
E1
E3
37
144
PIN 1 1 36
IDENTIFICATION
e
1A_ME_V4
DS13311 Rev 3 263/282

279

Symbol
A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 21.800 22.000 22.200 0.8583 0.8661 0.8740
D1 19.800 20.000 20.200 0.7795 0.7874 0.7953
D3 - 17.500 - - 0.6890 -
E 21.800 22.000 22.200 0.8583 0.8661 0.8740
E1 19.800 20.000 20.200 0.7795 0.7874 0.7953
E3 - 17.500 - - 0.6890 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
264/282 DS13311 Rev 3

Figure 86. LQFP144 - Recommended footprint
1.35
108 73
109 0.35 72
0.5
19.9 17.85
22.6
144 37
1 36
19.9
22.6
ai14905e
DS13311 Rev 3 265/282

279

location.
Figure 87. LQFP144 marking example (package top view)
Product
identification(1)
STM32H725ZGT6
Revision code
R
Date code
Y WW
Pin 1 identifier
MSv53066V2
266/282 DS13311 Rev 3

7.6 UFBGA169 package information

This UFBGA is a 169-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package.
Figure 88. UFBGA169 - Outline

Z Seating plane
A2 A4
ddd Z
A
A3 A1
b
SIDE VIEW A1 ball A1 ball
identifier index area X
E
E1
e F
A
F
D1 D
e
Y
N
13 1
BOTTOM VIEW Øb (169 balls) TOP VIEW

Ø eee M Z X Y
Ø fff M Z
A0YV_ME_V2
1. Drawing is not in scale.
Table 132. UFBGA169 - Mechanical data

Symbol
Min. Typ. Max. Min. Typ. Max.
A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 - 0.130 - - 0.0051 -
A4 0.270 0.320 0.370 0.0106 0.0126 0.0146
b 0.230 0.280 0.330 0.0091 0.0110 0.0130
D 6.950 7.000 7.050 0.2736 0.2756 0.2776
D1 5.950 6.000 6.050 0.2343 0.2362 0.2382
E 6.950 7.000 7.050 0.2736 0.2756 0.2776
E1 5.950 6.000 6.050 0.2343 0.2362 0.2382
e - 0.500 - - 0.0197 -
F 0.450 0.500 0.550 0.0177 0.0197 0.0217
DS13311 Rev 3 267/282

279
Table 132. UFBGA169 - Mechanical data (continued)

Symbol
ddd - - 0.100 - - 0.0039

eee - - 0.150 - - 0.0059
fff - - 0.050 - - 0.0020
Figure 89. UFBGA169 - Recommended footprint
Dpad
Dsm MS18965V2
Table 133. UFBGA169 - Recommended PCB design rules (0.5 mm pitch BGA)
Pitch 0.5
Dpad 0.27 mm
0.35 mm typ. (depends on the soldermask
Dsm
Solder paste 0.27 mm aperture diameter.
Note: Non-solder mask defined (NSMD) pads are recommended.

4 to 6 mils solder paste screen printing process.
268/282 DS13311 Rev 3

Device marking for UFBGA169

location.
Figure 90. UFBGA169 marking example (package top view)
Ball A1
identifier
STM32H
Product identification(1)
725AGI6
Revision code
Date code
Y WW R
MSv53068V2
DS13311 Rev 3 269/282

279

This LQFP is a 176-pin, 24 x 24 mm low profile quad flat package.
Figure 91. LQFP176 - Outline
θ θ
R1
H R2
B(See SECTION B-B)

GAUGE PLANE
0.25
D1/4
S θ
B
L
E1/4 θ3
4x N/4 TIPS 4x (L1)
bbb H A-B D
aaa C A-B D
BOTTOM VIEW SECTION A-A
A2 0.05
(N-4) x e
C
A
A1 ddd C A-BD ccc C
b
SIDE VIEW
D
D1
D
N
b WITH PLATING
E1/4
c c1
D1/4
A B
E1 E b1 BASE METAL
SECTION A-A
A A
SECTION B-B
TOP VIEW 1T_LQFP176_ME_V1

3. Datums A-B and D to be determined at datum plane H.
4. Detail of pin 1 identifier are optional but must be located within the zone indicated.
5. Exact shape of each corner is optional.

Symbol
A - - 1.600 - - 0.0630
A1(2) 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
(3)(4)
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
270/282 DS13311 Rev 3

Table 134. LQFP176 - Mechanical data (continued)

Symbol
(4)
b1 0.170 0.200 0.230 0.0067 0.0079 0.0091
(4)
c 0.090 - 0.200 0.0035 - 0.0079
(4)
c1 0.090 - 0.160 0.0035 - 0.063
D(5) 26.000 1.0236
D1(6)(7) 24.000 0.9449
(5)
E 26.000 0.0197
(6)(7)
E1 24.000 0.9449
e 0.500 0.1970
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
(4)
L1 1 0.0394 REF
(8)
N 176
θ 0° 3.5° 7° 0° 3.5° 7°
θ1 0° - - 0° - -
θ2 10° 12° 14° 10° 12° 14°
θ3 10° 12° 14° 10° 12° 14°
R1 0.080 - - 0.0031 - -
R2 0.080 - 0.200 0.0031 - 0.0079
S 0.200 - - 0.0079 - -
(9)
aaa 0.200 0.0079
bbb(9) 0.200 0.0079
(9)
ccc 0.080 0.0031
(9)
ddd 0.080 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.
2. A1 is defined as the distance from the seating plane to the lowest point on the package body.
3. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall not cause the lead
width to exceed the maximum “b” dimension by more than 0.08 mm. Dambar cannot be located on the
lower radius or the foot. Minimum space between protrusion and an adjacent lead is 0.07 mm for 0.4 mm
and 0.5 mm pitch packages.
4. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm from the lead tip.
5. To be determined at seating datum plane C.
6. The Top package body size may be smaller than the bottom package size by as much as 0.15 mm.
7. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash or protrusions is
“0.25 mm” per side. D1 and E1 are Maximum plastic body size dimensions including mold mismatch.
8. “N” is the max number of terminal positions for the specified body size.
DS13311 Rev 3 271/282

279
Figure 92. LQFP176 - Recommended footprint
1.2
176 133
1 0.5 132
0.3
26.7
21.8
44 89
45 88
1.2
21.8
26.7
1T_FP_V1
272/282 DS13311 Rev 3


location.
Figure 93. LQFP176 marking example (package top view
Product STM32H725IGT6
identification(1)
Revision code
R
Date code
Y WW
Pin 1 identifier
MSv52539V2
DS13311 Rev 3 273/282

279
7.8 UFBGA176+25 package information

This UFBGA176+25 is a 201-ball, 10 x 10 mm, 0.65 mm pitch, ultra fine pitch ball grid array
package.
Figure 94. UFBGA176+25 - Outline

Seating plane
C A4
ddd C
A
A3 A2 b A1
A1 ball A
A1 ball index E
identifier area
E1
e Z
A
Z
D1 D
e
B
R
15 1
Øb (176 + 25 balls)
BOTTOM VIEW Ø eee M C A B
TOP VIEW
Ø fff M C
A0E7_ME_V8
Table 135. UFBGA176+25 - Mechanical data

Symbol
A - - 0.600 - - 0.0236
A1 - - 0.110 - - 0.0043
A2 - 0.130 - - 0.0051 -
A3 - 0.450 - - 0.0177 -
A4 - 0.320 - - 0.0126 -
b 0.240 0.290 0.340 0.0094 0.0114 0.0134
D 9.850 10.000 10.150 0.3878 0.3937 0.3996
D1 - 9.100 - - 0.3583 -
E 9.850 10.000 10.150 0.3878 0.3937 0.3996
E1 - 9.100 - - 0.3583 -
e - 0.650 - - 0.0256 -
Z - 0.450 - - 0.0177 -
ddd - - 0.080 - - 0.0031
274/282 DS13311 Rev 3

Table 135. UFBGA176+25 - Mechanical data (continued)

Symbol
eee - - 0.150 - - 0.0059

fff - - 0.050 - - 0.0020
Figure 95. UFBGA176+25 - Recommended footprint
Dpad
Dsm
A0E7_FP_V1
Table 136. UFBGA176+25 - Recommended PCB design rules (0.65 mm pitch BGA)
Pitch 0.65 mm
Dpad 0.300 mm
0.400 mm typ. (depends on the soldermask
Dsm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.100 mm
DS13311 Rev 3 275/282

279
Device marking for UFBGA176+25

location.
Figure 96. UFBGA176+25 marking example (package top view
Product
identification(1)
STM32H725 Revision code
IGK6
R
Date code
Ball Y WW
A1identifier
MSv53070V2
276/282 DS13311 Rev 3

7.9 Thermal characteristics

The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max × ΘJA)
Where:
• TA max is the maximum ambient temperature in °C,
• ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
• PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
Table 137. Thermal characteristics

Symbol Definition Parameter Value Unit
Thermal resistance junction-ambient
26.1
VFQFPN68 - 8 x 8 mm / 0.4 mm pitch
43.8
LQFP100 - 14 x 14 mm
43.2
TFBGA100 - 8 x 8 mm /0.8 mm pitch
44.2
Thermal resistance WLCSP115 3.73 x 4.15 mm, 0.35 mm pitch
ΘJA °C/W
junction-ambient Thermal resistance junction-ambient
44.8
LQFP144 - 20 x 20 mm / 0.5 mm pitch
38
UFBGA169 - 7 x 7 mm / 0.5 mm pitch
48.3
38
UFBGA176+25 - 10 x 10 mm / 0.65 mm pitch
DS13311 Rev 3 277/282

279
Table 137. Thermal characteristics (continued)

Symbol Definition Parameter Value Unit
Thermal resistance junction-board
5.6
19.8
LQFP100 - 14 x 14 mm
24.8
17.6
Thermal resistance WLCSP115 3.73 x 4.15 mm, 0.35 mm pitch
ΘJB °C/W
junction-board Thermal resistance junction-board
24.4
LQFP144 - 20 x 20 mm /0.5 mm pitch
18
UFBGA169 - 7 x 7 mm /0.5 mm pitch
29.1
20
UFBGA176+25 - 10 x 10 mm /0.65 mm pitch
Thermal resistance junction-case
3.1
7.3
LQFP100 - 14 x 14 mm
13.2
1.7
Thermal resistance WLCSP115 3.73 x 4.15 mm / 0.35 mm pitch
ΘJC °C/W
junction-case Thermal resistance junction-case
7.4
11
UFBGA169 - 7 x 7 mm / 0.5 mm pitch
7.9
24
UFBGA176+25 - 10 x 10 mm / 0.65 mm pitch
7.9.1 Reference documents

• JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.
• For information on thermal management, refer to application note “Thermal
management guidelines for STM32 applications” (AN5036) available from www.st.com.
278/282 DS13311 Rev 3

STM32H725xE/G Ordering information
8 Ordering information
Example: STM32 H 725 V G T 6 TR
Device family
STM32 = Arm-based 32-bit microcontroller
Product type
H = High performance
Device subfamily
725 = STM32H725
Pin count
R = 68 pins
V = 100/115 pins
Z = 144 pins
A = 169 pins
I = 176 pins/balls
Flash memory size

E = 512 Kbytes
G = 1024 Kbytes
Package
T = LQFP ECOPACK2
K = UFBGA pitch 0.65 mm ECOPACK2
I = UFBGA pitch 0.5 mm ECOPACK2
H = TFBGA ECOPACK2
V = VFQFPN ECOPACK®2
Y = WLCSP ECOPACK®2
Temperature range
3 = Extended industrial temperature range, –40 to 125 °C
6 = Industrial temperature range –40 to 85 °C
Packing
TR = tape and reel
No character = tray or tube
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
DS13311 Rev 3 279/282

279
Revision history STM32H725xE/G
9 Revision history
Table 138. Document revision history

Date Revision Changes
10-Jul-2020 1 Initial release.

Distinction made between LQFP100 (STM32H725VGT) and TFBGA100
(STM32H725VGH) packages in Table 2: STM32H725xE/G features and
peripheral counts.
Renamed Section 3.30 into True random number generator (RNG).
Replaced VDDIOx by VDD in Section 6: Electrical characteristics.
Updated IIO in Table 11: Current characteristics and Table 18: Inrush
current and inrush electric charge characteristics for LDO and SMPS.
Removed Table 14: Supply voltage and maximum temperature
configuration.
03-Sep-2020 2 Updated Table 28: Typical current consumption in Autonomous mode,
Table 31: Typical and maximum current consumption in Standby mode and
Table 32: Typical and maximum current consumption in VBAT mode.
Added Section 6.3.16: I/O current injection characteristics.
Removed reference to PI8 in Table 56: Output voltage characteristics for all
I/Os except PC13, PC14 and PC15 and Table 57: Output voltage
characteristics for PC13, PC14 and PC15.
Added Section : Analog switch between ports Pxy_C and Pxy.
Added Figure 92: LQFP176 - Recommended footprint and Table 133:
UFBGA169 - Recommended PCB design rules (0.5 mm pitch BGA).
Added indication that patents apply to the devices in Section : Features.
Added reference to errata sheet in Section 1: Introduction.
Table 2: STM32H725xE/G features and peripheral counts:

– Changed number of general-purpose 32-bit timers to 4.
– For LQFP100, LQFP144 and TFBGA100 packages, replaced 2 Octo-
SPI/Quad-SPI interfaces by 1 and remove note.
– Changed number of SPI/I2S from 4/4 to 6/4 for UFBGA169, and 6/4 to
4/4 for WLCSP115.
In Section 3.7.1: Power supply scheme, changed VDD power supply
07-Dec-2021 3 requirements.
In Section 3.34: Universal synchronous/asynchronous receiver transmitter
(USART), changed USART communication speed to 17 Mbit/s
Updated Figure 4: VFQFPN68 pinout to show exposed pad.

Changed F7 signal to VDDLDO in Figure 5: TFBGA100 pinout.
Table 8: STM32H725 pin and ball descriptions:

– Added Note 1.and Note 2.to the package pin/balls corresponding to Pxy
and Pxy_C.
– For PA15(JTDI), replaced SPI3_NSS/I2S3_WS alternate function by
SPI3_NSS(boot)/I2S3_WS.
280/282 DS13311 Rev 3

STM32H725xE/G Revision history
Table 138. Document revision history

Date Revision Changes
Moved LSI clock from backup domain to VDD domain in Figure 14: Power
supply scheme.
Added VBAT in Table 13: General operating conditions.
Updated Table 19: Operating conditions at power-up/power-down title and
added tVCORE.
Modified Section 6.3.3: SMPS step-down converter including Figure 17:

External components for SMPS step-down converter. Updated Figure 18:
Typical SMPS efficiency (%) vs load current (A) in Run mode at TJ = 30 °C.
Updated measurement conditions for Typical and maximum current

consumption, Table 30: Typical and maximum current consumption in
System Stop mode.
Section : On-chip peripheral current consumption: updated measurement
conditions and Table 33: Peripheral current consumption in Run mode.
Updated Table 35: High-speed external user clock characteristics.
Changed unit for PLL long-term jitter in Table 43: PLL1 characteristics
(wide VCO frequency range).
Renamed ILEAK into Ilkg in Table 55: I/O static characteristics.
Table 59: Output timing characteristics (HSLV ON): updated load

capacitance condition for tr/tf and speed 10 and 11.
Updated Figure 41: OCTOSPI SDR read/write timing diagram, Figure 42:
07-Dec-2021 3 (continued) OCTOSPI DTR mode timing diagram, Figure 43: OCTOSPI Hyperbus
clock timing diagram, Figure 44: OCTOSPI Hyperbus read timing diagram
and Figure 45: OCTOSPI Hyperbus write timing diagram.
Updated sampling rate for slow channels in Table 84: 16-bit ADC
characteristics.
Updated Figure 46: ADC accuracy characteristics and Figure 47: Typical
connection diagram when using the ADC with FT/TT pins featuring analog
switch function plus notes below.
Updated TL max value in Table 93: Temperature sensor characteristics.
Changed temperature condition to 130 °C for TS_CAL2 in Table 94:
Temperature sensor calibration values.
Updated Figure 48: Power supply and reference decoupling (VREF+ not
connected to VDDA).
Updated Figure 55: USART timing diagram in Master mode and Figure 56:
USART timing diagram in Slave mode.
Updated Figure 65: SD high-speed mode, Figure 66: SD default mode and
Figure 67: SDMMC DDR mode.
Updated Figure 71: Ethernet MII timing diagram.
Updated Figure 77: LQFP100- Outline, Table 126: LQFP100 - Mechanical

data, Figure 80: TFBGA100 - Recommended footprint, Figure 91:
LQFP176 - Outline and Table 134: LQFP176 - Mechanical data.
DS13311 Rev 3 281/282

281
STM32H725xE/G
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other
product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2021 STMicroelectronics – All rights reserved
282/282 DS13311 Rev 3

Stm32h725ae PDF

Uploaded by

Copyright:

Available Formats

Stm32h725ae PDF

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Stm32h725ae PDF

Uploaded by

Copyright:

Available Formats

STM32H725xE/G

Arm® Cortex®-M7 32-bit 550 MHz MCU, up to 1 MB Flash, 564 KB

• 32-bit Arm® Cortex®-M7 CPU with DP-FPU, L1

instruction cache allowing 0-wait state

(Dhrystone 2.1), and DSP instructions

December 2021 DS13311 Rev 3 1/282

• 1 x 12-bit ADC, up to 5 MSPS in 12-bit, up to 12 external clock and up to 5 x SPI (from 5 x

• 2 x operational amplifier GBW = 8 MHz • 2x SAI (serial audio interface)

• 2× 12-bit D/A converters • 1× FD/TT-CAN and 2x FD-CAN

Debug mode Digital temperature sensor

STM32H725ZE, STM32H725VE, STM32H725RE, STM32H725IE,

2/282 DS13311 Rev 3

3.4 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

3.6 Filter mathematical accelerator (FMAC) . . . . . . . . . . . . . . . . . . . . . . . . . . 26

3.7 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

DS13311 Rev 3 3/282

3.19 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

4/282 DS13311 Rev 3

3.45 High-definition multimedia interface (HDMI)

5 Pinouts, pin descriptions and alternate functions . . . . . . . . . . . . . . . . 56

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

DS13311 Rev 3 5/282

48 MHz high-speed internal RC oscillator (HSI48) . . . . . . . . . . . . . . . . . . . . . . .149

6/282 DS13311 Rev 3

6.3.30 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219

7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250

7.2 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253

7.3 TFBGA100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257

7.4 WLCSP115 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260

7.5 LQFP144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 263

7.6 UFBGA169 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267

7.7 LQFP176 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270

7.8 UFBGA176+25 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 274

DS13311 Rev 3 7/282

7.9 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277

8 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 279

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280

8/282 DS13311 Rev 3

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

DS13311 Rev 3 9/282

10/282 DS13311 Rev 3

Table 97. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218

DS13311 Rev 3 11/282

Figure 1. STM32H725xE/G block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

12/282 DS13311 Rev 3

featuring analog switch function203

DS13311 Rev 3 13/282

This document provides information on STM32H725xE/G microcontrollers, such as

14/282 DS13311 Rev 3

STM32H725xE/G devices are based on the high-performance Arm® Cortex®-M7 32-bit

DS13311 Rev 3 15/282

• Advanced peripherals including

16/282 DS13311 Rev 3

Figure 1. STM32H725xE/G block diagram

64-bit AXI BUS-MATRIX

WWDG 16b TIM4 CH[4;1], ETR as AF

DCMI 16b TIM14 CH1 as AF

UART4 RX, TX, CTS, RTS, DE as AF

SD_[A;B], SCK_[A;B], FS_[A;B], SAI1 UART7 RX, TX, CTS, RTS, DE as AF