SMD General Purpose

Transistor (PNP)
MMBT3906

SMD General Purpose Transistor (PNP)

Features
• PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance

SOT-23
Mechanical Data
Case: SOT-23, Plastic Package

Terminals: Solderable per MIL-STD-202G, Method 208

Weight: 0.008 gram

Maximum Ratings (T Ambient=25ºC unless noted otherwise)

Symbol Description MMBT3906 Unit Conditions

VCEO Collector-Emitter Voltage -40 V

VCBO Collector-Base Voltage -40 V

VEBO Emitter-Base Voltage -5.0 V

IC Collector Current -200 mA

225 mW TA=25 ˚C
PD Total Device Power Dissipation(Note 1)
1.8 mW/°C Derate above 25 ˚C

RθJA Thermal Resistance, Junction to Ambient 556 °C /W

Total Device Power Dissipation, Alumina Substrate 300 mW TA=25 ˚C

PD (Note 2)
2.4 mW/°C Derate above 25 ˚C

RθJA Thermal Resistance, Junction to Ambient 417 °C /W

TJ Junction Temperature -55 to +150 °C

TSTG Storage Temperature Range -55 to +150 °C

Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. B/CZ

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 SMD General Purpose Transistor (PNP)

MMBT3906
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol Description Min. Max. Unit Conditions
Collector-Emitter Breakdown Voltage
V(BR)CEO (Pulse width ≤300µs, Duty Cycle ≤2.0%)
-40 - V IC=-1mA, IB=0

V(BR)CBO Collector-Base Breakdown Voltage -40 - V IC=-10µA, IE=0

V(BR)EBO Emitter-Base Breakdown Voltage -5.0 - V IE=-10µA, IC=0
IBL Base Cut-off Current - -50 nA VEB=-3V, VCE=-30V
ICEX Collector Cut-off Current - -50 nA VEB=-3V, VCE=-30V

On Characteristics
Symbol Description Min. Max. Unit Conditions

60 - VCE=-1V, IC=-0.1mA
80 - VCE=-1V, IC=-1mA
hFE D.C. Current Gain 100 300 VCE=-1V, IC=-10mA
60 - VCE=-1V, IC=-50mA
30 - VCE=-1V, IC=-100mA
- -0.25 IC=-10mA, IB=-1mA
VCE(sat) Collector-Emitter Saturation Voltage V
- -0.4 IC=-50mA, IB=-5mA
-0.65 -0.85 IC=-10mA, IB=-1mA
VBE(sat) Base-Emitter Saturation Voltage V
- -0.95 IC=-50mA, IB=-5mA
Small-signal Characteristics
Symbol Description Min. Max. Unit Conditions
VCE=-20V, IC=-10mA,
fT Current Gain-Bandwidth Product 250 - MHz
f=100MHz
VCB=-5V, f=1.0MHz,
COBO Output Capacitance - 4.5 pF
IE=0
VEB=-0.5V, f=1.0MHz,
CIBO Input Capacitance - 10 pF
IC=0
VCE=-10V, IC=-1mA,
hie Input Impedance 2.0 12 kohms
f=1kHz
VCE=-10V, IC=-1mA,
hre Voltage Feedback Ratio 0.1 10 x 10-4
f=1kHz
VCE=10V, IC=-1mA,
hfe Small-Signal Current Gain 100 400 -
f=1kHz
VCE=-10V, IC=-1mA,
hoe Output Admittance 3.0 60 UMHOS
f=1kHz
VCE=-5V, IC=-100µA,
NF Noise Figure - 4.0 dB
Rs=1.0kohms, f=1kHz

Rev. B/CZ
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 SMD General Purpose Transistor (PNP)

MMBT3906
Switching Characteristics
Symbol Description Min. Max. Unit Conditions

td Delay Time - 35 VCC=-3V, VBE=0.5V

tr Rise Time - 35 IC=-10mA, IB1=-1mA
ns
ts Storage Time - 225 VCC=-3V, IC=-10mA,
tf Fall Time - 75 IB1= IB2=-1mA

Equivalent Test Circuit

Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time

Total Shunt Capacitance of test jig and connectors

Rev. B/CZ
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 SMD General Purpose Transistor (PNP)

MMBT3906
Typical Characteristics Curves ( TJ =25°C --- TJ =125°C )
Fig.3- Capacitance Fig.4- Charge Data
Capacitance (pF)

Charge Q (pC)

Reverse Bias Voltage (V) Collector Current IC (mA)

Fig.5- Turn-On Time Fig.6- Fall Time

Fall Time tf (nS)
Time (ns)

Collector Current IC (mA) Collector Current IC (mA)

Rev. B/CZ
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 SMD General Purpose Transistor (PNP)

MMBT3906
Typical Audio Small-Signal Characteristics Noise Figure Variations
(VCE=-5.0 V. TA=25°C, Bandwidth=1.0Hz)

Fig.7- Noise Figure Fig.8- Noise Figure

Noise Figure NF (dB)

Noise Figure NF (dB)

Frequency f (kHz) Source Resistance RS (kΩ)

Rev. B/CZ
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 SMD General Purpose Transistor (PNP)

MMBT3906
h Parameters (VCE=-10V, f=1.0kHz, TA=25°C)
Fig.9- Current Gain Fig.10- Output Admittance

Output Admittance hoe (μ mhos)

Current Gain hfe

Collector Current IC (mA) Collector Current IC (mA)

Fig.11- Input Impedance Fig.12- Voltage Feedback Ratio

Voltage Feedback Ratio hfe (x10-4)
Input Impedance hie (KΩ)

Collector Current IC (mA) Collector Current IC (mA)

Rev. B/CZ
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 SMD General Purpose Transistor (PNP)

MMBT3906
Typical Static Characteristics

Fig.13- DC Current Gain

DC Current Gain hFE (Normalized)

Collector Current IC (mA)

Fig.14- Collector Saturation Region

Collector-Emitter Voltage VCE (V)

Base Current IB (mA)

Rev. B/CZ
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 SMD General Purpose Transistor (PNP)

MMBT3906
Fig.15- “On” Voltage Fig.16- Temperature Coefficients

Temperature Coefficient (mV/°C)

Voltage (V)

Collector Current IC (mA) Collector Current IC (mA)

Device Marking: MMBT3906=2A

Dimensions in mm
SOT-23

Rev. B/CZ
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 SMD General Purpose Transistor (PNP)

MMBT3906

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Rev. B/CZ
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