AiT Semiconductor Inc.

MBT2907AL
www.ait-ic.com SWITCHING TRANSISTOR
PNP TRANSISTOR

DESCRIPTION FEATURES

The MBT2907AL is available in SOT-23 Package.  Available in SOT-23 Package

ORDERING INFORMATION PIN DESCRIPTION

Package Type Part Number

SOT-23 MBT2907AL
Note SPQ: 3,000pcs / Reel
AiT provides all RoHS Compliant Products

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 AiT Semiconductor Inc. MBT2907AL
www.ait-ic.com SWITCHING TRANSISTOR
PNP TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

TA = 25°C
VCEO, Collector-Emitter Voltage -40Vdc ~ -60Vdc
VCBO, Collector-Base Voltage -60Vdc
VEBO, Emitter-Base Voltage -5.0Vdc
IC , Collector Current-Continuous -600mAdc
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

THERMAL CHARACTERISTICS

Parameter Symbol Max Unit

Total Device Dissipation FR-5 BoardNOTE1
TA = 25°C PD 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Total Device Dissipation Alumina SubstrateNOTE2
TA = 25°C PD 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in.
NOTE2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

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 AiT Semiconductor Inc. MBT2907AL
www.ait-ic.com SWITCHING TRANSISTOR
PNP TRANSISTOR

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise noted.

Parameter Symbol Conditions Min Max Unit
OFFCHARACTERISTICS
Collector–Emitter
V (BR)CEO IC = -10mAdc, IB = 0 -60 - Vdc
Breakdown VoltageNOTE3
Collector-Emitter
V(BR)CBO IC = -10μAdc, IE = 0 -60 - Vdc
Breakdown Voltage
Emitter-Base Breakdown
V(BR)EBO IE = -10μAdc, IC = 0 -5.0 - Vdc
Voltage
Collector Cutoff Current ICEX VCB = -30Vdc, VBE(OFF) = -0.5Vdc - -50 nAdc
VCB = -50Vdc, IE = 0 - -0.010
Collector Cutoff Current ICBO μAdc
VCB = -50Vdc, IE = 0, TA = 125°C - -10
Base Current IB VCE = -30Vdc, VEB(OFF) = -0.5Vdc - -50 nAdc
ON CHARACTERISTICS
IC = -0.1mAdc, V CE = -10Vdc 75 -
IC = -10mAdc, VCE = -10Vdc 100 -
DC Current Gain hFE IC = -1.0mAdc, VCE = -10Vdc 100 - -
IC = -150mAdc, V CE = -10VdcNOTE3 100 300
IC = -500mAdc, VCE = -10VdcNOTE3 50 -
Collector-Emitter IC = -150mAdc, IB = -15mAdc - -0.4
VCE(sat) Vdc
Saturation VoltageNOTE3 IC = -500mAdc, IB = -50mAdc - -1.6
Base-Emitter Saturation IC = -150mAdc, IB = -15mAdc - -1.3
VBE(sat) Vdc
Voltage NOTE3 IC = -500mAdc, IB = -50mAdc - -2.6
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth IC = -50mAdc, VCE = -20Vdc,
fT 200 - MHz
ProductNOTE3,4 f = 100MHz
Output Capacitance Cobo VCB = -10Vdc, IE = 0, f = 1.0MHz - 8.0 pF
Input Capacitance Cibo VEB = -2.0Vdc, IC = 0, f = 1.0MHz - 30 pF
Turn–On Time ton - 45
VCC = -30Vdc, IC = -150mAdc,
Delay Time td - 10 ns
IB1 = -15mAdc
Rise Time tr - 40
Fall Time tf - 30
VCC = -6.0Vdc, IC = -150mAdc,
Storage Time ts - 80 ns
IB1 = IB2 = 15mAdc
Turn–Off Time toff - 100
NOTE3: Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
NOTE4: fT is defined as the frequency at which |h f e | extrapolates to unity.

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 AiT Semiconductor Inc. MBT2907AL
www.ait-ic.com SWITCHING TRANSISTOR
PNP TRANSISTOR

TYPICAL CHARACTERISTICS

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

Figure 3. DC Current Gain

Figure 4. Collector Saturation Region

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 AiT Semiconductor Inc. MBT2907AL
www.ait-ic.com SWITCHING TRANSISTOR
PNP TRANSISTOR

Figure 5. Turn–On Time Figure 6. Turn–Off Time

TYPICAL SMALL-SIGNAL CHARACTERISTICS, NOISE FIGURE(VCE = 10Vdc, TA = 25°C)

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product

REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - -5-

 AiT Semiconductor Inc. MBT2907AL
www.ait-ic.com SWITCHING TRANSISTOR
PNP TRANSISTOR

Figure 11. “On” Voltage Figure 12. Temperature Coefficients

REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - -6-

 AiT Semiconductor Inc. MBT2907AL
www.ait-ic.com SWITCHING TRANSISTOR
PNP TRANSISTOR

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm)

INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A 0.035 0.044 0.89 1.11
A1 0.001 0.004 0.01 0.10
b 0.015 0.020 0.37 0.50
c 0.003 0.007 0.09 0.18
D 0.110 0.120 2.80 3.04
E 0.047 0.055 1.20 1.40
e 0.070 0.081 1.78 2.04
L 0.004 0.012 0.10 0.30
L1 0.014 0.029 0.35 0.69
HE 0.083 0.104 2.10 2.64

REV1.3 - MAY 2011 RELEASED, APR 2019 UPDATED - -7-

 AiT Semiconductor Inc. MBT2907AL
www.ait-ic.com SWITCHING TRANSISTOR
PNP TRANSISTOR

IMPORTANT NOTICE

AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.

AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may
involve potential risks of death, personal injury, or server property, or environmental damage. In order to
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.

AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.

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