Green FZT751

60V PNP MEDIUM POWER TRANSISTOR IN SOT223

Features Mechanical Data

 BVCEO > -60V  Package: SOT223 (Type DN)
 IC = -3A High Continuous Current  Package Material: Molded Plastic. “Green” Molding Compound;
 ICM = -6A Peak Pulse Current UL Flammability Rating 94V-0
 Low Saturation Voltage VCE(sat) < -300mV @ -1A  Moisture Sensitivity: Level 1 per J-STD-020
 Complementary NPN Type: FZT651  Terminals: Finish - Matte Tin Plated Leads, Solderable per
 Lead-Free Finish; RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208
 Halogen and Antimony Free. “Green” Device (Note 3)  Weight: 0.112 grams (Approximate)
 An Automotive-Compliant Part is Available Under Separate
Datasheet (FZT751Q) Applications
 Lighting
 MOSFET and IGBT gate driving

SOT223 (Type DN)

C
E

B C C

B
E
Top View
Top View Device Symbol Pin-Out

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT751TA FZT751 7 12 1,000
FZT751TC FZT751 13 12 4,000
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information
SOT223

FZT 751 = Product Type Marking Code

YWW

FZT YWW = Date Code Marking

751 Y or Y = Last Digit of Year (ex: 2= 2022)
WW or WW = Week Code (01~53)

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Document Number DS32208 Rev. 10 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved.
 FZT751

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -7 V
Continuous Collector Current IC -3 A
Peak Pulse Current ICM -6 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
(Note 5) 2 W
Power Dissipation PD
(Note 6) 3 W
(Note 5) 62.5 °C/W
Thermal Resistance, Junction to Ambient RθJA
(Note 6) 41.7 °C/W
Thermal Resistance, Junction to Leads (Note 7) RθJL 12.9 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

ESD Ratings (Note 8)

Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

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Document Number DS32208 Rev. 10 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved.
 FZT751

Thermal Characteristics and Derating Information

10 VCE(sat) 10 VCE(sat)

IC Collector Current (A)

IC Collector Current (A)

Limit Limit

1 DC 1 DC

1s 1s
100ms 100ms
100m 10ms 100m 10ms
T amb=25°C T amb=25°C
1ms 1ms
25mm x 25mm 50mm x 50mm
2oz FR4 100µs 2oz FR4 100µs
10m 10m
1 10 1 10
VCE Collector-Emitter Voltage (V) VCE Collector-Emitter Voltage (V)
Safe Operating Area Safe O perating A rea

70 50
T amb=25°C
Thermal Resistance (°C/W)

T amb=25°C
Thermal Resistance (°C/W)
60
25mm x 25mm 40 50mm x 50mm
50 2oz FR4 2oz FR4

40 30
D=0.5
D=0.5
30 20
Single Pulse
20 D=0.2 D=0.2 Single Pulse
D=0.05 10
10 D=0.05
D=0.1 D=0.1
0 0
100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Pulse Width (s)
T ransient T herm al Im pedance Transient Thermal Impedance

Single Pulse 3.0

Max Power Dissipation (W)

Max Power Dissipation (W)

100 T amb=25°C 50mm x 50mm

2.5 2oz FR4

2.0 25mm x 25mm

50mm x 50mm 2oz FR4
2oz FR4 1.5
10
1.0

25mm x 25mm 0.5

2oz FR4
1 0.0
100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160
Pulse Width (s) Temperature (°C)
Pulse Power Dissipation Derating Curve

FZT751 3 of 7 January 2023

Document Number DS32208 Rev. 10 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved.
 FZT751

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage BVCBO -80   V IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9) BVCEO -60   V IC = -10mA
Emitter-Base Breakdown Voltage BVEBO -7   V IE = -100µA
 -1 -100 nA VCB = -60V
Collector Cut-Off Current ICBO
  -10 µA VCB = -60V, Tamb = +100°C
Emitter Cut-Off Current IEBO  -1 -20 nA VEB = -6V
 -0.15 -0.3 IC = -1A, IB = -100mA
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) V
 -0.45 -0.6 IC = -3A, IB = -300mA
Base-Emitter Saturation Voltage (Note 9) VBE(sat)  -0.9 -1.25 V IC = -1A, IB = -100mA
Base-Emitter Turn-On Voltage (Note 9) VBE(on)  -0.8 -1.0 V IC = -1A, VCE = -2V
70 200  IC = -50mA, VCE = -2V
100 200 300 IC = -500mA, VCE = -2V
DC Current Gain (Note 9) hFE 
80 170  IC = -1A, VCE = -2V
40 150  IC = -2A, VCE = -2V
VCE = -5V, IC = -100mA
Current Gain-Bandwidth Product fT 100 140  MHz
f = 100MHz
Turn-On Time ton  40  ns VCC = -10V, IC = -500mA
Turn-Off Time toff  450  ns IB1 = -IB2 = -50mA
Output Capacitance Cobo   30 pF VCB = -10V, f = 1MHz
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

FZT751 4 of 7 January 2023

Document Number DS32208 Rev. 10 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved.
 FZT751

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

FZT751 5 of 7 January 2023

Document Number DS32208 Rev. 10 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved.
 FZT751

Package Outline Dimensions

Please see https://www.diodes.com/design/support/packaging/ for the latest version.

SOT223 (Type DN)

b2
C

SOT223 (Type DN)

Dim Min Max Typ
A -- 1.70 --
E1 E A1 0.01 0.15 --
A2 1.50 1.68 1.60
Gauge
b 0.60 0.80 0.70
Plane b2 2.90 3.10 --
0.25 c 0.20 0.32 --
Seating D 6.30 6.70 --
Plane
L
E 6.70 7.30 --
e E1 3.30 3.70 --
b
e -- -- 2.30
e1 e1 -- -- 4.60
L 0.85 -- --
All Dimensions in mm
A A1

A2

Suggested Pad Layout

Please see https://www.diodes.com/design/support/packaging/ for the latest version.

SOT223 (Type DN)

X1

Y1

Dimensions Value (in mm)

C 2.30
C1 6.40
C1 Y2 X 1.20
X1 3.30
Y 1.60
Y1 1.60
Y2 8.00

X C

FZT751 6 of 7 January 2023

Document Number DS32208 Rev. 10 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved.
 FZT751

IMPORTANT NOTICE

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
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2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’
products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications,
(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their
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© 2023 Diodes Incorporated. All Rights Reserved.

www.diodes.com

FZT751 7 of 7 January 2023

Document Number DS32208 Rev. 10 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved.