A Product Line of

Diodes Incorporated

FMMT718
20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23

Features and Benefits Mechanical Data

• BVCEO > -20V • Case: SOT-23
• IC = -1.5A Continuous Collector Current • UL Flammability Rating 94V-0
• ICM = -6A Peak Pulse Current • Case material: molded Plastic.
• Low Saturation Voltage VCE(sat) < -200mV @ -1A • Moisture Sensitivity: Level 1 per J-STD-020D
• RSAT = 97mΩ for a low equivalent on-resistance • Terminals: Matte Tin Finish annealed over Copper plated Alloy
42 leadframe. Solderable per MIL-STD-202, Method 208
• hFE characterised up to -6A for high current gain hold-up
• Weight: 0.008 grams (Approximate)
• 625mW power dissipation due to SuperSOT package
• Complementary part number FMMT618
• Lead Free, RoHS Compliant (Note 1) Applications
• Qualified to AEC-Q101 Standards for High Reliability
• MOSFET Gate Driving
• DC-DC Converters
• Charging circuit
• Power switches

C
SOT23
E
B C

 
E
Top View
Top View Device Symbol Pin-Out

Ordering Information
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FMMT718TA 718 7 8 3,000
FMMT718TC 718 13 8 10,000

Note: 1. No purposefully added lead.

Marking Information

718 718 = Product Type Marking Code

1 of 7 June 2011
FMMT718 www.diodes.com © Diodes Incorporated
Document Number: DS31924 Rev. 3 - 2
 A Product Line of
Diodes Incorporated

FMMT718

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -1.5 A
Peak Pulse Current ICM -6 A
Base Current IB -500 mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit
Power Dissipation 625 mW
(Note 2) PD
Linear Rating Factor 5 mW/°C
Thermal Resistance, Junction to Ambient (Note 2) RθJA 200 °C/W
Thermal Resistance, Junction to Lead (Note 3) RθJL 194 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 2. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
3. Thermal resistance from junction to solder-point (at the end of the collector lead).

2 of 7 June 2011
FMMT718 www.diodes.com © Diodes Incorporated
Document Number: DS31924 Rev. 3 - 2
 A Product Line of
Diodes Incorporated

FMMT718

Thermal Characteristics and Derating information

Device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a
steady-state condition.

3 of 7 June 2011
FMMT718 www.diodes.com © Diodes Incorporated
Document Number: DS31924 Rev. 3 - 2
 A Product Line of
Diodes Incorporated

FMMT718
Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage BVCBO -20 -65 V IC = -100 µA
Collector-Emitter Breakdown Voltage (Note 4) BVCEO -20 -55 V IC = -10 mA
Emitter-Base Breakdown Voltage BVEBO -5 -8.8 V IE = -100 µA
Collector Cutoff Current ICBO -100 nA VCB = -15V
Emitter Cutoff Current IEBO -100 nA VEB = -4V
Collector Emitter Cutoff Current ICES -100 nA VCE= -15V
300 475 IC = -10mA, VCE = -2V
300 450 IC = -100mA, VCE = -2V
Static Forward Current Transfer Ratio
hFE 150 230 IC = -2A, VCE = -2V
(Note 4)
35 70 IC = -4A, VCE = -2V
15 30 IC = -6A, VCE = -2V
-16 -40 mV IC =- 0.1A, IB = -10mA
Collector-Emitter Saturation Voltage
VCE(sat) -130 -200 mV IC = -1A, IB = -20mA
(Note 4)
-145 -220 mV IC = -1.5A, IB = -50mA
Base-Emitter Turn-On Voltage(Note 4) VBE(on) -0.81 -1.0 V IC = -2A, VCE = -2V
Base-Emitter Saturation Voltage(Note 4) VBE(sat) -0.87 -1.0 V IC = -1.5A, IB = -50mA
Output Capacitance Cobo 34 43 pF VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
Transition Frequency fT 150 180 MHz
f = 100MHz
Turn-On Time ton 68 ns VCC=-10V, IC =-1A
Turn-Off Time toff 270 ns IB1 = IB2 = -20mA

Note: 4. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%

4 of 7 June 2011
FMMT718 www.diodes.com © Diodes Incorporated
Document Number: DS31924 Rev. 3 - 2
 A Product Line of
Diodes Incorporated

FMMT718

Typical Electrical Characteristics

5 of 7 June 2011
FMMT718 www.diodes.com © Diodes Incorporated
Document Number: DS31924 Rev. 3 - 2
 A Product Line of
Diodes Incorporated

FMMT718

Package Outline Dimensions

A SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
B C C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H H 2.80 3.00 2.90
J 0.013 0.10 0.05
K M K 0.903 1.10 1.00
K1
K1 - - 0.400
D L 0.45 0.61 0.55
J F L
G M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm

Suggested Pad Layout

Y
Dimensions Value (in mm)
Z 2.9
Z
C X 0.8
Y 0.9
C 2.0
E 1.35

X E

6 of 7 June 2011
FMMT718 www.diodes.com © Diodes Incorporated
Document Number: DS31924 Rev. 3 - 2
 A Product Line of
Diodes Incorporated

FMMT718

IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
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Copyright © 2011, Diodes Incorporated
www.diodes.com

7 of 7 June 2011
FMMT718 www.diodes.com © Diodes Incorporated
Document Number: DS31924 Rev. 3 - 2