KJ45H90G

N-Channel Enhancement Mode MOSFET

1. Product Information
1.1 Features

 Advanced trench cell design  Low Thermal Resistance

1.2 Applications

 Motor drivers  DC - DC Converter

1.3 Quick reference

 BV ≧ 45 V  RDS(ON) ≦ 2.9 mΩ @ VGS = 10 V

 Ptot ≦ 35 W RDS(ON) ≦ 3.9 mΩ @ VGS = 4.5 V
 ID ≦ 86 A

2. Pin Description
Pin Description Simplified Outline Symbol
8 7 6 5
D
1,2,3 Source
4 Gate
5,6,7,8 Drain
G

1 2 3 4
Top View S
PDFN5x6-8L

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3. Limiting Values

Symbol Parameter Conditions Min Max Unit

VDS Drain-Source Voltage TC = 25 ℃ 45 - V
VGS Gate-Source Voltage TC = 25 ℃ - ± 20 V
ID* Drain Current TC = 25 ℃, VGS = 10 V - 86 A
IDM*,*** Pulsed Source Current TC = 25 ℃, VGS = 10 V - 240 A
Ptot* Total Power Dissipation TC = 25 ℃ - 35 W
Tstg Storage Temperature - 55 150 ℃
TJ Junction Temperature - 150 ℃
IS Diode Forward Current TC = 25 ℃ - 86 A
RθJA* Thermal Resistance- Junction to Ambient - 62.5
℃/W
RθJC* Thermal Resistance- Junction to Case - 3.5

Notes：
* Surface Mounted on 1 in2 pad area, t  10 sec
** Pulse width  10 s, duty cycle  1 %
*** Limited by bonding wire

4. Marking Information

Product Name Marking

45H90 YWWXXX:
KJ45H90G
YWWXXX Date Code

5. Ordering Code

Product Name Package Reel Size Tape width Quantity Note

KJ45H90G PDFN5*6 5000

Note: KUAIJIEXIN defines “ Green ” as lead-free ( RoHS compliant ) and halogen free ( Br or Cl does not exceed
900 ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500 ppm by weight;
Follow IEC 61249-2-21 and IPC / JEDEC J-STD-020C )

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6. Electrical Characteristics (TA = 25 °C Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 45 - - V
VGS(th) Gate Threshold Voltage VDS = VGS, IDS = 250 μA 1.0 1.5 2.0 V
VDS = 32 V, VGS = 0 V - - 1 μA
IDSS Zero Gate Voltage Source Current
TJ = 85 ℃ - - 30 μA
IGSS Gate Leakage Current VGS = ± 20 V, VDS = 0 V - - ± 100 nA
VGS = 10 V, ID = 20 A - 2.4 2.9
RDS(ON)a Drain-Source On-State Resistance mΩ
VGS = 4.5 V, ID = 10 A - 3.4 3.9
Diode Characteristics
VSDa Diode Forward Voltage ISD = 20 A, VGS = 0 V - - 1.3 V
trr Reverse Recovery Time - 46 - ns
ISD = 20 A, dlSD/dt = 100 A/μs
Qrr Reverse Recovery Charge - 39 - nC
b
Dynamic Characteristics
Ciss Input Capacitance - 2554 -
VGS = 0 V, VDS = 20 V
Coss Output Capacitance - 754 - pF
Frequency = 1 MHz
Crss Reverse Transfer Capacitance - 53 -
td(on) Turn-on Delay Time - 11 -
VDS = 20 V, VGEN = 10 V,
tr Turn-on Rise Time RG = 4.5 Ω, RL = 1 Ω, - 46 -
IDS = 20 A ns
td(off) Turn-off Delay Time - 46 -
tf Turn-off Fall Time - 32 -
Gate Charge Characteristicsb
Qg Total Gate Charge - 48 -
VDS = 20 V, VGS = 10 V,
Qgs Gate-Source Charge - 9.3 - nC
IDS = 20 A
Qgd Gate-Drain Charge - 8.2 -

Notes：
a : Pulse test ; pulse width  300 s, duty cycle  2 %
b : Guaranteed by design, not subject to production testing

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7. Typical Characteristics (Cont.)

Power Capability Current Capability
40 100

90
35
80
30

ID - Drain Current (A)

70
Ptot - Power (W)

25
60

20 50

40
15
30
10
20
5 o
o 10 TC=25 C,VGS=10V
TC=25 C,VGS=10V
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Transient Thermal Impedance

600 2

1 Duty = 0.5
Normalized Effective Transient

100 100us
it
im

0.2
)L

300us
ID - Drain Current (A)

on

0.1
s(
Rd

1ms
10 0.1 0.05
10ms
0.02
100ms

1 1s
0.01
DC

0.01

0.1 Single Pulse

2
TC=25 C
o Mounted on 1in pad
o
RJC :3.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 500 1E-4 1E-3 0.01 0.1 1 10 100
VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)

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7. Typical Characteristics (Cont.)
Output Characteristics On Resistance
50 7
VGS= 4,5,6,7,8,9,10V
45
6

RDS(ON) - On Resistance (mΩ)

40
5
ID - Drain Current (A)

35

30 4 VGS= 4.5V
3V
25
3
20

15 2 VGS=10V

10
1
5 2V

0 0
0.0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Transfer Characteristics Normalized Threshold Voltage

80 1.8
IDS=20A IDS =250A

70 1.6
Normalized Threshold Voltage
RDS(ON) - On Resistance (mΩ)

1.4
60
1.2
50
1.0
40
0.8
30
0.6
20
0.4

10 0.2

0 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C)

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7. Typical Characteristics (Cont.)
Normalized On Resistance Diode Forward Current
2.2 40
VGS = 10V
2.0 IDS = 20A
1.8
Normalized On Resistance

10

IS - Source Current (A)

o
Tj=150 C
1.6

1.4

1.2
o
Tj=25 C
1.0 1
0.8

0.6

0.4 o
RON@Tj=25 C: 2.4m
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

4000 10
Frequency=1MHz VDS= 20V
3500
IDS= 20A
VGS - Gate-Source Voltage (V)

Ciss 8
3000
C - Capacitance (pF)

2500
6
2000

1500 4
Coss
1000
2
500
Crss
0
0 5 10 15 20 25 30 35 40 0
0 10 20 30 40 50

VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)

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8. Package Dimensions
PDFN5x6 - 8L Package

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