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    SSG 4825 Pe

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    greardo jose rodriguez
    This document provides specifications for a P-channel MOSFET device. It has a low RDS(on) of 13 mΩ which provides high efficiency. It is intended for use in applications such as DC-DC converters and power management in portable electronics. The MOSFET has a SOP-8 package and utilizes a trench process for low resistance and heat dissipation. It can operate with a continuous drain current of -11.5A and pulsed drain current of ±50A.

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    SSG 4825 Pe

    Uploaded by

    greardo jose rodriguez
    16 views2 pages
    This document provides specifications for a P-channel MOSFET device. It has a low RDS(on) of 13 mΩ which provides high efficiency. It is intended for use in applications such as DC-DC converters and power management in portable electronics. The MOSFET has a SOP-8 package and utilizes a trench process for low resistance and heat dissipation. It can operate with a continuous drain current of -11.5A and pulsed drain current of ±50A.

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    This document provides specifications for a P-channel MOSFET device. It has a low RDS(on) of 13 mΩ which provides high efficiency. It is intended for use in applications such as DC-DC converters and power management in portable electronics. The MOSFET has a SOP-8 package and utilizes a trench process for low resistance and heat dissipation. It can operate with a continuous drain current of -11.5A and pulsed drain current of ±50A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    16 views2 pages

    SSG 4825 Pe

    Uploaded by

    greardo jose rodriguez
    This document provides specifications for a P-channel MOSFET device. It has a low RDS(on) of 13 mΩ which provides high efficiency. It is intended for use in applications such as DC-DC converters and power management in portable electronics. The MOSFET has a SOP-8 package and utilizes a trench process for low resistance and heat dissipation. It can operate with a continuous drain current of -11.5A and pulsed drain current of ±50A.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    SSG4825PE

    -11.5 A, 30 V, RDS(ON) 13 m
    Elektronische Bauelemente P-Channel Mode Power MOSFET

    RoHS Compliant Product


    A suffix of “-C” specifies halogen & lead-free

    DESCRIPTION
    These miniature surface mount MOSFETs SOP-8
    utilize a high cell density trench process to
    provide low RDS(on) and to ensure minimal
    B
    power loss and heat dissipation. Typical
    applications are DC-DC converters and power
    management in portable and battery-powered
    products such as computers, printers, PCMCIA L D

    cards, cellular and cordless telephones. M

    A C

    FEATURES N

     Low RDS(on) provides higher efficiency and J K

    extends battery life. H G F E

     Low thermal impedance copper leadframe


    SOP-8 saves board space. Millimeter Millimeter
     Fast switching speed. REF.
    Min. Max.
    REF.
    Min. Max.
    A 5.80 6.20 H 0.35 0.49
     High performance trench technology. B 4.80 5.00 J 0.375 REF.
    C 3.80 4.00 K 45°
    D 0° 8° L 1.35 1.75
    E 0.40 0.90 M 0.10 0.25
    F 0.19 0.25 N 0.25 REF.
    PACKAGE INFORMATION G 1.27 TYP.

    Package MPQ LeaderSize


    SOP-8 2.5K 13’ inch S D

    S D
    ESD
    Protection S D
    Diode
    3KV G D

    MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

    Parameter Symbol Ratings Unit


    Drain-Source Voltage VDS -30 V
    Gate-Source Voltage VGS ±25 V
    ID @ TA = 25°C -11.5 A
    Continuous Drain Current 1
    ID @ TA = 70°C -9.3 A
    Pulsed Drain Current 2 IDM ±50 A
    Continuous Source Current (Diode Conduction) 1 IS -2.1 A
    PD @ TA = 25°C 3.1 W
    Total Power Dissipation 1
    PD @ TA = 70°C 2.3 W
    Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C
    Thermal Resistance Ratings
    1
    Thermal Resistance Junction-Case (Max.) t ≦ 5 sec RθJC 25 °C / W
    Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 5 sec RθJA 50 °C / W
    Notes:
    1 Surface Mounted on 1” x 1” FR4 Board.
    2 Pulse width limited by maximum junction temperature.

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    31-Dec-2010 Rev. B Page 1 of 2


    SSG4825PE
    -11.5 A, 30 V, RDS(ON) 13 m
    Elektronische Bauelemente P-Channel Mode Power MOSFET

    ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

    Parameter Symbol Min. Typ. Max. Unit Teat Conditions


    Static
    Drain-Source Breakdown Voltage V(BR)DSS -30 - - V VGS= 0V, ID= -250μA

    Gate Threshold Voltage VGS(th) -1 - - V VDS= VGS, ID= -250μA

    Gate-Body Leakage Current IGSS - - ±1 μA VDS= 0V, VGS= ±25V

    - - -1 μA VDS= -24V, VGS= 0V


    Zero Gate Voltage Drain Current IDSS
    - - -5 μA VDS= -24V, VGS= 0V, TJ= 55°C
    1
    On-State Drain Current ID(on) -50 - - A VDS= -5V, VGS= -10V

    - - 13 VGS= -10V, ID= -11.5A


    Drain-Source On-Resistance 1 RDS(ON) mΩ
    - - 19 VGS= -4.5V, ID= -9.3A
    1
    Forward Transconductance gfs - 29 - S VDS= -15V, ID= -11.5A

    Diode Forward Voltage VSD - -0.8 - V IS= 2.5A, VGS= 0V


    2
    Dynamic

    Total Gate Charge Qg - 25 -


    ID= -11.5A
    Gate-Source Charge Qgs - 11 - nC VDS= -15V
    VGS= -5V
    Gate-Drain Charge Qgd - 17 -

    Input Capacitance Ciss - 2300 -


    VDS= -15V
    Output Capacitance Coss - 600 - pF VGS= 0V
    f= 1MHz
    Reverse Transfer Capacitance Crss - 300 -

    Turn-On Delay Time Td(on) - 15 -


    VDD= -15V
    Rise Time Tr - 13 - ID= -1A
    nS
    Turn-Off Delay Time Td(off) - 100 - VGEN= -10V
    RL= 6Ω
    Fall Time Tf - 54 -

    Notes:
    1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
    2 Guaranteed by design, not subject to production testing.

    http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

    31-Dec-2010 Rev. B Page 2 of 2

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