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    GT3401 1

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    Vojvoda od Beograda

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    © All Rights Reserved
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    GT3401 1

    Uploaded by

    Vojvoda od Beograda
    7 views3 pages

    Original Title

    GT3401-1

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    Copyright:

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    7 views3 pages

    GT3401 1

    Uploaded by

    Vojvoda od Beograda

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    GT3401

    Data Sheet
    YGMOS Technology Crop.
    30V P-Channel Enhancement-Mode MOSFET 30V P 沟道增强型 MOS 管

    VDS= -30V
    RDS(ON), Vgs@-10V, Ids@-4.2A = 60mΩ
    RDS(ON), Vgs@-4.5V, Ids@-4.0A = 75mΩ
    RDS(ON), Vgs@-2.5V, Ids@-1.0A = 120mΩ

    Features 特性 台湾原厂ＭＯＳ 联系人：肖生 手机：１３１４５８５８２１０ 电话：０７５５－８３７４２８６５ ＱＱ：５８２２４２９２０


    Advanced trench process technology 高级的加工技术

    High Density Cell Design For Ultra Low On-Resistance 极低的导通电阻高密度的单元设计


    Package Dimensions 封装尺寸及外形图
    Marking
    D D

    A16T 3401

    G S G S
    SOT-23(PACKAGE)

    Millimeter Millimeter
    REF. REF.
    Min. Max. Min. Max.
    A 2.70 3.10 G 1.90 REF.
    B 2.40 2.80 H 1.00 1.30
    C 1.40 1.60 K 0.10 0.20
    D 0.35 0.50 J 0.40 -
    E 0 0.10 L 0.85 1.15
    F 0.45 0.55 M 0° 10°

    Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC 极限参数和热特性
    Parameter 极限参数 Symbol 符号 Limit 范围 Unit 单位

    Drain-Source Voltage 漏源电压 VDS -30


    V
    Gate-Source Voltage 栅源电压 VGS ±12
    Continuous Drain Current 连续漏极电流 ID -4.2
    A
    Pulsed Drain Current 脉冲漏极电流 IDM -30
    o
    TA = 25 C 1.4
    Maximum Power Dissipation 最大耗散功率 PD W
    o
    TA = 75 C 1
    o
    Operating Junction and Storage Temperature Range 使用及储存温度 TJ, Tstg -55 to 150 C
    o
    Junction-to-Ambient Thermal Resistance (PCB mounted) 结环热阻 RθJA 125 C/W

    -1-
    GT3401
    Data Sheet
    YGMOS Technology Crop.
    ELECTRICAL CHARACTERISTICS 一般电气特性
    Parameter 参数 符号 Test Condition 测试条件 最小值 典型值 最大值 单位

    Static 静态参数

    Drain-Source Breakdown Voltage 漏源击穿电压 BVDSS VGS = 0V, ID = -250uA -30 V


    Drain-Source On-State Resistance 漏源导通电阻 RDS(on) VGS = -10V, ID = -4.2A 53.0 60.0
    Drain-Source On-State Resistance 漏源导通电阻 RDS(on) VGS = -4.5V, ID = -4A 64.0 75.0 mΩ
    Drain-Source On-State Resistance 漏源导通电阻 RDS(on) VGS = -2.5V, ID =-1A 86.0 120.0
    Gate Threshold Voltage 开启电压 VGS(th) VDS =VGS, ID = -250uA -0.7 -1 -1.3 V
    Zero Gate Voltage Drain Current 零栅压漏极电流 IDSS VDS = -24V, VGS = 0V -1 uA
    Gate Body Leakage 漏极短路时截止栅电流 IGSS VGS = ± 12V, VDS = 0V ± 100 nA
    Forward Transconductance 正向跨导 gfs VDS = -5V, ID = -5A 7 11 S
    Dynamic 动态参数

    Total Gate Charge 栅极总电荷 Qg 9.4


    VDS = -20 V, ID = -5 .7A
    Gate-Source Charge 栅-源极电荷 Qgs 2 nC
    VGS = -10 V
    Gate-Drain Charge 栅-漏极电荷 Qgd 3
    Turn-On Delay Time 导通延迟时间 td(on) 6.3
    VDD= -20 V, RL=20Ω
    Turn-On Rise Time 导通上升时间 tr 3.2
    ID = -1 A, VGEN = -10 V ns
    Turn-Off Delay Time 关断延迟时间 td(off) 38.2
    RG = 6Ω
    Turn-Off Fall Time 关断下降时间 tf 12
    Input Capacitance 输入电容 Ciss 954
    VDS = 8V, VGS = 0V
    Output Capacitance 输出电容 Coss 115 pF
    f = 1.0 MHz
    Reverse Transfer Capacitance 反向传输电容 Crss 77
    Source-Drain Diode 源漏二极管参数

    Max. Diode Forward Current 最大正向电流 IS -2.2 A


    Diode Forward Voltage 正向电压 VSD IS = 1.8A, VGS = 0V -1.0 V
    Note: Pulse test: pulse width <= 300us, duty cycle<= 2% 注意：脉冲测试：脉冲宽度<= 300us 死区<= 2%

    -2-
    GT3401
    Data Sheet
    YGMOS Technology Crop.

    -3-

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