Nano Photonics End Sessional 2020

Name: ID:
VISVESVARAYA NATIONAL INSTITUTE OF TECHNOLOGY, NAGPUR

Centre for VLSI and Nanotechnology
M.Tech. (VLSI Design) – III Semester
End Semester Examination - December 2020
Course Code : ENL-543 Course: Nanophotonics

Max. Marks : 35 Duration: 1hr 30min
__________________________________________________________________________________________
Instructions: 1. Missing data if any can be suitably assumed
2. Numbers in [ ] indicates marks
Q.1) Consider a typical InGaAsP SOA operating at 1.3 µm with the following parameters:
active region width = 5 µm, active region thickness = 0.5 µm, active region length = 200
µm, confinement factor is 0.4, time constant is 1 ns, 𝝈𝒈 = 𝟑 × 𝟏𝟎−𝟐𝟎 m2, the carrier
concentration per unit volume at transparency is 𝟏. 𝟎 × 𝟏𝟎𝟐𝟒 m-3, and the bias current is
100 mA. Calculate
(a) saturated power; (b) the zero-signal gain coefficient; (c) the zero-signal net gain.
[5]
Q.2) Consider an erbium doped fiber amplifier being pumped at 0.98 µm with 30 mW
pump power. The signal wavelength is 1.55 µm. It is given that the cross sectional area of
the fully doped fiber core is 8.5 µm2, doping concentration is 𝟓. 𝟎 × 𝟏𝟎𝟐𝟒 m-3, pump
absorption cross section is 𝟐. 𝟏𝟕 × 𝟏𝟎−𝟐𝟓 m2, signal absorption cross section is 𝟐. 𝟓𝟕 ×
𝟏𝟎−𝟐𝟓 m2, signal emission cross section is 𝟑. 𝟒𝟏 × 𝟏𝟎−𝟐𝟓 m2 and the input signal power is
100 µW. Assuming that the fiber modes for 𝝀𝒔 and 𝝀𝒑 are fully confined, calculate
(a) the rate of absorption per unit volume from the Er3+ level E1 to pump level E3 due to
the pump at 𝝀𝒑 (assuming N2=0). And
(b) the rate of absorption per unit volume from level E1 to metastable level E2 due to the
and the rate of stimulated emissions per unit volume from level E2 to E1, both due to the
signal at 𝝀𝒔 (assuming N2= N1). [5]
Q.3) An InGaAs p-i-n photodiode is orating at room temperature at a wavelength of 1.3 µm. Its
quantum efficiency is 70% and the incident optical power is 500 nW. Assume that the
primary dark current of the device is 5 nA, load resistance is 1 kΩ and the effective
bandwidth is 25 MHz. Calculate
(a) the rms values of shot noise current, dark current and the thermal noise current; (b)
S/N at the input end of an amplifier of the receiver. [5]
Q.4) (a) For an avalanche photodiode, every ten incident photons are creating five electron
hole pairs and out of the generated charge carriers, 80% are getting collected at the
output terminal at 1.3 µm. When illuminated with optical power of 0.3 µW at this
wavelength, it produces an output photocurrent of 6 µA, after avalanche gain. Calculate
the multiplication factor of the diode. [3]
(b) A typical photodiode has a responsivity of 0.40 A/W for a He-Ne laser source
(λ=632.8nm). The active area of the photodiode is 2 mm2. What will be the output
photocurrent if the incident flux is 100 µW/mm2? [2]
Name: ID:
Q.5) A Barrus type p-n GaAs LED is coupled to a step-index fiber of core diameter larger than
the emitting area of the LED, using transparent bonding cement. The refractive indices of the
bonding cement and GaAs are 1.5 and 3.7 respectively. Consider the mean lifetimes
corresponding to radiative and non-radiative recombination are same for GaAs and equal to
100ns. Assume that there is negligible self-absorption within the semiconductor. Also assume that
the LED is forward biased with a current of 120 mA and a voltage of 1.5 V, and the emitted
photons possess energy, Eph=1.43 eV, calculate
(a) the internal power efficiency of the device; (b) the external power efficiency of the device, if it
is emitting in air. [5]
Q.6) (a) The longitudinal modes of a double heterojunction GaAs/GaAlAs injection laser
diode operating at a wavelength of 850 nm are separated in frequency by 250 GHz. If the
refractive index of the active region is 3.7, calculate the length of the optical cavity and
the number of longitudinal modes emitted? [2]
(b) A double heterojunction GaAs/GaAlAs injection laser diode operating at 850 nm has
a cavity length of 500 µm, and the refractive index of the cavity is 3.7. How many
longitudinal modes are emitted? What is the mode separation in terms of frequency and
wavelength? Compare the results obtained in Q. 6(a) and (b). [3]
Q.7) Two parallel sheets of glass (𝜺𝒓 = 𝟖. 𝟓) mounted vertically are separated by a
uniform air gap between their inner surface. The sheets, properly sealed, are immersed
in oil (𝜺𝒓 = 3.0) as shown in Figure 1. A uniform electric field of strength 2000 V/m in the
horizontal direction exists in the oil. Calculate the magnitude and direction of the electric
field in the glass and in the enclosed air gap when (a) the field is normal to the glass
surfaces, and (b) the field in the oil makes an angle of 75° with a normal to the glass
surfaces. Ignore edge effects. [5]
Figure. 1

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Name: ID:

VISVESVARAYA NATIONAL INSTITUTE OF TECHNOLOGY, NAGPUR

Course Code : ENL-543 Course: Nanophotonics

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