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Semiconductor

Characterization
Techniques
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Introduction

• Semiconductor characterization techniques are


used in order to gain knowledge on the physical
properties of a semiconductor crystal
• The knowledge gained from the characterization
process essential in determining whether the
semiconductor crystal probed is suitable for a
particular device component with certain
functionalities
• Semiconductors are a unique class of materials,
distinct from conductors and insulators

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Structural
characterization
techniques

• X-ray Diffraction
• Scanning Electron Microscopy
• Transmission Electron Microscopy
• Auger Electron Spectroscopy
• Secondary ion Mass Spectroscopy
• X-ray photoelectron spectroscopy

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Principle of X-ray
diffraction

• X-ray diffraction involves directing X-


rays at a semiconductor sample
• The crystal lattice of the material
scatters the X-rays, and the resulting
diffraction pattern provides structural
information

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Principle of Scanning
Electron Microscopy
(SEM)

• Scanning Electron Microscopy relies


on the interaction of electrons with the
sample
• A focused electron beam scans the
surface of the semiconductor, and the
emitted secondary electrons provide
information about the topography and
composition

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Principle of • Transmission Electron Microscopy utilizes a beam of


electrons that passes through an ultra-thin specimen
Transmission
• Interaction with the sample generates images and
Electron diffraction patterns
Microscopy

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Principle of Auger
Electron Microscopy

• The key principle of Auger Electron


Microscopy is that the emitted Auger
electrons carry information about the
elemental composition of the sample's
surface
• Each element has a unique set of Auger
electron energy levels, so by measuring the
energy spectrum of Auger electrons, the
composition of the material can be
determined

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Principle of Secondary
Ion Mass
Spectroscopy

• The fundamental principle of SIMS is


based on the generation and analysis
of secondary ions that are sputtered
from the surface of a sample when
bombarded with a primary ion beam

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Principle of X-Ray
electron Spectroscopy

• In the XPS technique, low-energy x-


rays are used as a source rather than
electrons in the case of EDX and AES
• Electrons are ejected when the photon
is absorbed via the photoelectric effect

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Electrical characterization Hall Effect

techniques

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Principle of Hall Effect

• The Hall Effect involves the generation


of a voltage perpendicular to both the
current flow and the applied magnetic
field in a semiconductor
• This voltage is directly proportional to
the carrier concentration and their
mobility

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