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    Datasheet NEC 2S B1644

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    david
    This document provides information about the 2SB1644 power transistor. Some key features include its low saturation voltage of -0.5V at -3A/-0.3A collector-base current and excellent DC current gain characteristics. The transistor has absolute maximum ratings of -80V collector-emitter voltage and -4A collector current. It comes in the PSD3 package and has a minimum DC current transfer ratio of 100.

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    Datasheet NEC 2S B1644

    Uploaded by

    david
    41 views1 page
    This document provides information about the 2SB1644 power transistor. Some key features include its low saturation voltage of -0.5V at -3A/-0.3A collector-base current and excellent DC current gain characteristics. The transistor has absolute maximum ratings of -80V collector-emitter voltage and -4A collector current. It comes in the PSD3 package and has a minimum DC current transfer ratio of 100.

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    Datasheet-NEC-2S-B1644

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    This document provides information about the 2SB1644 power transistor. Some key features include its low saturation voltage of -0.5V at -3A/-0.3A collector-base current and excellent DC current gain characteristics. The transistor has absolute maximum ratings of -80V collector-emitter voltage and -4A collector current. It comes in the PSD3 package and has a minimum DC current transfer ratio of 100.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    41 views1 page

    Datasheet NEC 2S B1644

    Uploaded by

    david
    This document provides information about the 2SB1644 power transistor. Some key features include its low saturation voltage of -0.5V at -3A/-0.3A collector-base current and excellent DC current gain characteristics. The transistor has absolute maximum ratings of -80V collector-emitter voltage and -4A collector current. It comes in the PSD3 package and has a minimum DC current transfer ratio of 100.

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    2SB1644

    Transistors

    Power Transistor (−80V, −4A)


    2SB1644

    !Features !External dimensions (Units : mm)


    1) Low saturation voltage. 13.1
    (Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 3.2

    2) Excellent DC current gain characteristics.

    (3) (2) (1)

    2.54

    10.1
    5.08
    1.24
    0.78
    !Absolute maximum ratings (Ta = 25°C) 8.8

    1.3
    0.4
    1.3
    Parameter Symbol Limits Unit

    4.5
    Collector-base voltage VCBO −80 V

    0to0.3
    Collector-emitter voltage VCEO −80 V 0.5Min.
    Emitter-base voltage VEBO −5 V
    −4 A (DC)
    Collector current IC (1) Base
    −6 ROHM : PSD3
    Collector power dissipation
    A (Pulse)
    * EIAJ : SC-83A (2) Collector
    PC 30 W (Tc = 25°C)
    (3) Emitter
    Junction temperature Tj 150 °C
    Storage temperature Tstg −55~+150 °C

    * Single pulse, Pw = 100ms

    !Packaging specifications and hFE


    Type 2SB1644
    Package PSD3
    hFE EF
    Code T100
    Basic ordering unit (pieces) 1000

    !Electrical characteristics (Ta = 25°C)


    Parameter Symbol Min. Typ. Max. Unit Conditions
    Collector-base breakdown voltage BVCBO −80 − − V IC = −50µA
    Collector-emitter breakdown voltage BVCEO −60 − − V IC = −1mA
    Emitter-base breakdown voltage BVEBO −5 − − V IE = −50µA
    Collector cutoff current ICBO − − −10 µA VCB = −80V
    Emitter cutoff current IEBO − − −10 µA VEB = −4V
    Collector-emitter saturation voltage − − −1.5 V IC/IB = −3A/−0.3A
    Base-emitter saturation voltage
    VCE(sat)
    − − −1.5 V IC/IB = −3A/−0.3A
    *
    DC current transfer ratio
    VBE(sat)
    100 − 320 − VCE/IC = −5V/−1A
    *
    hFE
    Transition frequency fT − 12 − MHz VCE = −5V , IE = 0.5A , f = 5MHz
    Output capacitance Cob − 100 − pF VCB = −10V , IE = 0A , f = 1MHz
    *
    * Measured using pulse current.

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