This document contains the questions and information for the Physics and Modeling of Microelectronic Devices mid-semester test. There are 7 questions covering topics like pn junctions, doping concentrations, Fermi-Dirac probability density functions, conduction bands, low level injection, minority carrier lifetime, and calculating atomic density in a body-centered cubic crystal structure. The test is out of 35% and lasts 2 hours. Various constants are provided to use in calculations.
This document contains the questions and information for the Physics and Modeling of Microelectronic Devices mid-semester test. There are 7 questions covering topics like pn junctions, doping concentrations, Fermi-Dirac probability density functions, conduction bands, low level injection, minority carrier lifetime, and calculating atomic density in a body-centered cubic crystal structure. The test is out of 35% and lasts 2 hours. Various constants are provided to use in calculations.
This document contains the questions and information for the Physics and Modeling of Microelectronic Devices mid-semester test. There are 7 questions covering topics like pn junctions, doping concentrations, Fermi-Dirac probability density functions, conduction bands, low level injection, minority carrier lifetime, and calculating atomic density in a body-centered cubic crystal structure. The test is out of 35% and lasts 2 hours. Various constants are provided to use in calculations.
This document contains the questions and information for the Physics and Modeling of Microelectronic Devices mid-semester test. There are 7 questions covering topics like pn junctions, doping concentrations, Fermi-Dirac probability density functions, conduction bands, low level injection, minority carrier lifetime, and calculating atomic density in a body-centered cubic crystal structure. The test is out of 35% and lasts 2 hours. Various constants are provided to use in calculations.
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Birla Institute of Technology & Science, Pilani
Work-Integrated Learning Programmes Division
Second Semester 2019-2020 Mid-Semester Test (EC-2 Regular)
Course No. : MEL ZG631
Course Title : Physics and Modeling of Microelectronic Devices (PMMD) Nature of Exam : Closed Book Weightage : 35% No. of Pages =2 Duration : 2 Hours No. of Questions = 7 Date of Exam : Saturday, 07/03/2020 (FN) Note: 1. Please follow all the Instructions to Candidates given on the cover page of the answer book. 2. All parts of a question should be answered consecutively. Each answer should start from a fresh page. 3. Assumptions made if any, should be stated clearly at the beginning of your answer.
Q.1. Consider a Silicon pn junction under thermal equilibrium with uniform doping concentrations.
Calculate (a) Built-in potential (b) Depletion width on p-side. (c) Calculate the maximum Electric field in the junction. [2 + 3 + 2 = 7]
Q.2. A silicon material is doped with donor impurities ND=1015cm-3. Assuming complete impurity ionization Calculate (i) equilibrium electron and hole concentrations (ii) Resistivity of doped material. [2 + 2 = 4]
Q.3. The doping distribution in a p-type semiconductor is shown below [5]
Calculate the magnitude of electric field (at x=0) in the semiconductor due to nonuniform doping.
Q.4. What is Fermi-Dirac probability density function? Plot it at T=0 oK and T=300oK [4]
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Q.5. In Conduction Band, Electron concentration at Lowe and Higher Energy states is minimum while it is maximum in intermediate energy states. Why? [4]
Q.6. Short Answer questions [1.5 * 5 = 7.5]
(a) Define Low level injection (b) Validity of Mass-action law under Low level injection (c) What is minority carrier life time and Diffusion Length (d) What is Einstein Relation (e) Draw a lattice plane that is having miller indicies of (1,1,0)
Q.7. Find the volume density of atoms in a crystal that is a body-centered cubic, as shown in Figure, with a lattice constant a = 5*10-8 cm. [3.5]
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MEL ZG631 (EC-2 Regular) Second Semester 2019-2020 Page 2 of 2
