TPCS8004

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

TPCS8004
High Speed Switching Applications
Unit: mm
Switching Regulator Applications
DC-DC Converters

· Small footprint due to small and thin package

· Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.)
· High forward transfer admittance: |Yfs| = 1.8 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 200 V)
· Enhancement-model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 200 V

Drain-gate voltage (RGS = 20 kW) VDGR 200 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 1.3
Drain current A JEDEC ―
Pulse (Note 1) IDP 5.2
JEITA ―
Drain power dissipation (t = 10 s)
PD 1.5
(Note 2a) TOSHIBA 2-3R1B
W
Drain power dissipation (t = 10 s)
(Note 2b)
PD 0.6 Weight: 0.035 g (typ.)

Single pulse avalanche energy (Note3) EAS 1.05 mJ

Avalanche current IAR 1.3 A
Circuit Configuration
Repetitive avalanche energy
EAR 0.15 mJ
(Note2a, Note 4)
Channel temperature Tch 150 °C 8 7 6 5

Storage temperature range Tstg -55~150 °C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with caution.

1 2 3 4

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Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 83.3 °C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 208 °C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

Type

S8004

※
Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(unit: mm) (unit: mm)

Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 1.3 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: ○ on lower right of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continues up to 52 or 53)

Year of manufacture
(One low-order digits of calendar year)

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA

Drain cut-OFF current IDSS VDS = 200 V, VGS = 0 V ¾ ¾ 100 mA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 ¾ ¾ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ¾ 3.5 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.6 A ¾ 0.56 0.8 W
Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.6 A 0.9 1.8 ¾ S
Input capacitance Ciss ¾ 380 ¾ pF
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 40 ¾ pF
Output capacitance Coss ¾ 140 ¾ pF

Rise time tr ¾ 4.5 ¾

ID = 0.6 A
VGS 10 V VOUT
0V

RL = 167 W
Turn-ON time ton ¾ 12 ¾
Switching time ns

4.7 W
Fall time tf ¾ 23 ¾
VDD ~
- 100 V

Turn-OFF time toff ¾ 54 ¾

Duty <
= 1%, tw = 10 ms

Total gate charge

Qg ¾ 12 ¾ nC
(gate-source plus gate-drain)
VDD ~- 160 V, VGS = 10 V,
Gate-source charge Qgs ID = 1.3 A ¾ 8 ¾ nC
Gate-drain (“miller”) charge Qgd ¾ 4 ¾ nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current (pulse) (Note 1) IDRP ¾ ¾ ¾ 5.2 A

Forward voltage (diode) VDSF IDR = 1.3 A, VGS = 0 V ¾ ¾ -2.0 V
Reverse recovery time trr IDR = 1.3 A, VGS = 0 V, ¾ 89 ¾ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/ms ¾ 230 ¾ nC

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ID – VDS ID – VDS
5 5
Common source 6 Common source
10 8 10 4.8 Ta = 25°C
6 Ta = 25°C Pulse test
4.8 4.6 8
Pulse test
4 4 4.6

(A)
(A)

4.4 4.4

ID
ID

3 3
4.2

Drain current
Drain current

4.2

2 4 2
4

3.8 3.8
1 1
VGS = 3.6 V VGS = 3.6 V

0 0
0 10 20 30 40 0 2 4 6 8 10

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

5 3.0
Common source Common source
VDS = 10 V Ta = 25°C
Pulse test
Pulse test 2.5
(V)

4
(A)

VDS

2.0
ID

3
Drain-source voltage
Drain current

1.5 ID = 2.6 A

2
25°C 1.0
1.3
1
Ta = 100°C -55°C 0.5 0.6

0.32
0 0
0 1 2 3 4 5 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

|Yfs| – ID
7 RDS (ON) – ID
Common source Ta = -55°C
5 VDS = 10 V 5
Common source
Pulse test
(S)

(W)

3 3 Ta = 25°C
25°C
100°C Pulse test
ïYfsï

RDS (ON)
Forward transfer admittance

1 1
Drain-source on resistance

VGS = 10 V
0.5 0.5
15 V

0.3 0.3

0.1 0.1

0.05 0.05
0.05 0.1 0.3 0.5 1 3 5 0.05 0.1 0.3 0.5 1 3 5

Drain current ID (A) Drain current ID (A)

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RDS (ON) – Ta IDR – VDS

1.2 10
(W)

Common source Common source

1.3 A
Pulse test Ta = 25°C
Drain-source ON resistance RDS (ON)

1.0 5 Pulse test

0.65 A

(A)
ID = 0.32 A 3
0.8

Drain reverse current IDR

0.6
1

0.4
VGS = 10 V 0.5

0.2 0.3
VGS = 10 V

0 5V
-80 -40 0 40 80 120 160 0, -1 V
3V
0.1
Ambient temperature Ta (°C) -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3

Drain-source voltage VDS (V)

Capacitance – VDS Vth – Ta

1000 5
Common source
VDS = 10 V
Ciss
Gate threshold voltage Vth (V)

ID = 1 mA
4
Pulse test
(pF)

100
3
Coss
Capacitance C

10 Crss
1

Common source
Ta = 25°C
f = 1MHz 0
-80 -40 0 40 80 120 160
VGS = 0 V
1
0.1 1 10 100 Ambient temperature Ta (°C)

Drain-source voltage VDS (V)

PD – Ta Dynamic input/output characteristics

2.0
(1) Device mounted on a glass-epoxy board (a)
(Note 2a) 160 16
(2) Device mounted on a glass-epoxy board (b)
(W)

(V)

VDS
(V)

1.6 (1) (Note 2b)

40
t = 10 s
PD

VDS

VGS

120 80 12
Drain power dissipation

1.2
VDD = 160 V
Drain-source voltage

Gate-source voltage

80 8
0.8 VGS
(2)
Common source
40 ID = 1.3 A 4
0.4
Ta = 25 °C

0 0 0
0 40 80 120 160 200 0 4 8 12 16

Ambient temperature Ta (°C) Total gate charge Qg (nC)

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rth - tw
500
(1) Device mounted on a glass-epoxy board (a) (Note 2a)

(°C/W)
300 (2)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
100
Normalized transient thermal impedance rth

(1)
50
30

10

5
3

0.5
0.3

Single pulse
0.1
1m 10 m 100 m 1 10 100 1000

Pulse width tw (S)

Safe operating area EAS - Tch

10 1.2
ID max (pulse) *
5
3 1 ms * 1.0
(mJ)

1
Avalanche energy EAS

0.8
(A)

0.5
0.3 10 ms *
ID

0.6
Drain current

0.1
0.05
0.4
0.03

0.01 0.2
0.005
* Single pulse Ta = 25°C
0.003
Curves must be derated linearly 0
VDSS max 25 50 75 100 125 150
with increase in temperature.
0.001
0.1 0.3 1 3 10 30 100 300 1000 Channel temperature (initial) Tch (°C)

Drain-source voltage VDS (V)

BVDSS
15 V
-15 V IAR

VDD VDS

Test circuit Wave form

Tch = 25°C (Initial)
1 2 æ B VDSS ö
Peak IAR = 1.3 A, RG = 25 W E AS = 2 × L × I × çç B ÷÷
è VDSS - VDD ø
VDD = 50 V, L = 1 mH

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RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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