TK4A60DA

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK4A60DA
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 600 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 600 V

Gate-source voltage VGSS ±30 V
DC (Note 1) ID 3.5
Drain current Pulse (t = 1 ms) A
IDP 14
(Note 1)
1: Gate
Drain power dissipation (Tc = 25°C) PD 35 W 2: Drain
3: Source
Single pulse avalanche energy
EAS 158 mJ
(Note 2) JEDEC ⎯
Avalanche current IAR 3.5 A JEITA SC-67
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
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Channel temperature Tch 150 °C
Weight: 1.7 g (typ.)
Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).

Internal Connection
Thermal Characteristics

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 22.5 mH, RG = 25 Ω, IAR = 3.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution. 3

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 TK4A60DA
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA

Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 10 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.4 ⎯ 4.4 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.8 A ⎯ 1.7 2.2 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1.8 A 0.6 2.2 ⎯ S
Input capacitance Ciss ⎯ 490 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 3 ⎯ pF

Output capacitance Coss ⎯ 55 ⎯

10 V ID = 1.8 A VOUT
Rise time tr VGS ⎯ 18 ⎯
0V
Turn-on time ton RL = ⎯ 40 ⎯
50 Ω
Switching time 111 Ω ns
Fall time tf ⎯ 8 ⎯
VDD ≈ 200 V

Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 55 ⎯

Total gate charge Qg ⎯ 11 ⎯

Gate-source charge Qgs VDD ≈ 400 V, VGS = 10 V, ID = 3.5 A ⎯ 6 ⎯ nC

Gate-drain charge Qgd ⎯ 5 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C) http://www.DataSheet4U.net/

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ⎯ ⎯ ⎯ 3.5 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 14 A
Forward voltage (diode) VDSF IDR = 3.5 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 3.5 A, VGS = 0 V, ⎯ 1000 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 5.0 ⎯ μC

Marking

K4A60DA Part No. (or abbreviation code)

Lot No.

A line indicates
Lead(Pb)-Free Finish

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 TK4A60DA

ID – VDS ID – VDS
2 5
COMMON SOURCE 10 7 COMMON SOURCE 10 8
Tc = 25°C Tc = 25°C
PULSE TEST 8 PULSE TEST
(A)

(A)
1.6 4
7.5
6.5
DRAIN CURRENT ID

DRAIN CURRENT ID
1.2 3
7

0.8 6 2
6.5

0.4 5.5 6
1
VGS = 5.5V
VGS = 5 V

0 0
0 1 2 3 4 5 0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

8 20
VDS (V)

COMMON SOURCE COMMON SOURCE

VDS = 20 V Tc = 25℃
PULSE TEST PULSE TEST
(A)

6.4 16
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

4.8 12

3.2 8
25
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ID = 3.5 A

1.6 100 Tc = −55 °C 4 1.8

0.9

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

10 100
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE COMMON SOURCE

DRAIN-SOURCE ON RESISTANCE

VDS = 10 V Tc = 25°C
PULSE TEST PULSE TEST

Tc = −55 °C 10
RDS (ON) (Ω)
⎪Yfs⎪ (S)

25
1 100
VGS = 10, 15 V

0.1 0.1
0.1 1 10 0.1 1 10

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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 TK4A60DA

RDS (ON) – Tc IDR – VDS

8 100
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

VGS = 10 V Tc = 25°C

DRAIN REVERSE CURRENT

PULSE TEST PULSE TEST
6.4

10
RDS (ON) ( Ω)

4.8

IDR (A)
3.5
1.8
3.2 10
1
ID = 0.9 A

1.6
1
5 3 VGS = 0 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.3 −0.6 −0.9 −1.2 −1.5

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5
GATE THRESHOLD VOLTAGE
(pF)

4
1000
Ciss
C

3
Vth (V)
CAPACITANCE

100
Coss
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2

10 COMMON SOURCE
COMMON SOURCE 1 VDS = 10 V
VGS = 0 V Crss
ID = 1 mA
f = 1 MHz
PULSE TEST
Tc = 25°C
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
50 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VDS
VGS

40 400 200
16
DRAIN-SOURCE VOLTAGE

VDD = 100 V
GATE-SOURCE VOLTAGE

30 300 400 12
PD (W)

20 200 8
VGS COMMON SOURCE
ID = 3.5 A
10 100 Tc = 25°C 4
PULSE TEST

0 0 0
0 40 80 120 160 0 4 8 12 16 20

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

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 TK4A60DA

rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1
Duty=0.5

0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE t
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 3.57°C/W
0.001
10μ 100μ 1m 10m 100m 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 200

ID max (pulsed) * 160

AVALANCHE ENERGY

100 μs *
10

ID max (continuous) *
(A)

EAS (mJ)

1 ms * 120
ID

1 DC operation
Tc = 25°C 80
DRAIN CURRENT

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40
0.1

0
*: SINGLE NONREPETITIVE 25 50 75 100 125 150
0.01 PULSE Tc = 25°C
CURVES MUST BE DERATED CHANNEL TEMPEATURE (INITIAL) Tch (°C)
LINEARLY WITH INCREASE
IN TEMPERATURE.
VDSS max
0.001 BVDSS
0.1 1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
−15 V
VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 22.5 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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 TK4A60DA

RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL

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• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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