STD16N50M2,

STF16N50M2, STP16N50M2
N-channel 500 V, 0.24 Ω typ.,13 A, MDmesh™ M2
Power MOSFETs in DPAK, TO-220FP and TO-220 packages
Datasheet − preliminary data

TAB
Features
3
1 Order codes VDS @ TJmax RDS(on) max. ID
DPAK STD16N50M2
STF16N50M2 550 V 0.28 Ω 13 A

TAB STP16N50M2

• Extremely low gate charge

• Excellent output capacitance (Coss) profile
3
1
2
3
1
2 • 100% avalanche tested
TO-220FP TO-220 • Zener-protected

Figure 1. Internal schematic diagram Applications

• Switching applications

Description
These devices are N-channel Power MOSFETs
developed using the MDmesh™ M2 technology.
Thanks to the strip layout associated to an
improved vertical structure, these devices exhibit
both low on-resistance and optimized switching
characteristics. They are therefore suitable for the
most demanding high efficiency converters.

AM15572v1

Table 1. Device summary

Order codes Marking Package Packaging

STD16N50M2 DPAK Tape and reel

STF16N50M2 16N50M2 TO-220FP
Tube
STP16N50M2 TO-220

July 2014 DocID026641 Rev 3 1/22

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com
change without notice.
Contents STD16N50M2, STF16N50M2, STP16N50M2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................ 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 DPAK (TO-252) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-220FP mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 TO-220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
DPAK TO-220 TO-220FP

VGS Gate-source voltage ± 25 V

Drain current (continuous) at
ID 13 A
TC = 25 °C
Drain current (continuous) at
ID 8 A
TC = 100 °C
IDM(1) Drain current (pulsed) 52 A
PTOT Total dissipation at TC = 25 °C 110 25 W
dv/dt (2)
Peak diode recovery voltage slope 15 V/ns
dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns
Insulation withstand voltage (RMS)
VISO from all three leads to external 2500 V
heatsink (t = 1 s; TC = 25 °C)
Tstg Storage temperature
Max. operating junction - 55 to 150 °C
Tj
temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 400 V.

Table 3. Thermal data

Value
Symbol Parameter Unit
DPAK TO-220 TO-220FP

Thermal resistance junction-case

Rthj-case 1.14 5
max.
Thermal resistance junction-
Rthj-amb 62.5 °C/W
ambient max.
Thermal resistance junction-pcb
Rthj-pcb 50
max.(1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board.

DocID026641 Rev 3 3/22

22
Electrical characteristics STD16N50M2, STF16N50M2, STP16N50M2

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not

IAR 4 A
repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
EAS 215 mJ
Tj = 25 °C, ID = IAR; VDD = 50)

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 500 V
breakdown voltage
Zero gate voltage VDS = 500 V 1 µA
IDSS
drain current (VGS = 0) VDS = 500 V, TC = 125 °C 100 µA
Gate-body leakage
IGSS VGS = ± 25 V ±10 µA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source
RDS(on) VGS = 10 V, ID = 6.5 A 0.24 0.28 Ω
on-resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 710 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, - 44 - pF
VGS = 0
Reverse transfer
Crss - 1.35 - pF
capacitance
Equivalent output
Coss eq.(1) VDS = 0 to 400 V, VGS = 0 - 192 - pF
capacitance
Intrinsic gate
RG f = 1 MHz open drain - 5.2 - Ω
resistance
Qg Total gate charge - 19.5 - nC
VDD = 400 V, ID = 13 A,
Qgs Gate-source charge - 4 - nC
VGS = 10 V (see Figure 19)
Qgd Gate-drain charge - 8 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.

4/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 9.6 - ns

VDD = 250 V, ID = 6.5 A,
tr Rise time - 7.6 - ns
RG = 4.7 Ω, VGS = 10 V
td(off) Turn-off delay time (see Figure 18 and Figure 23) - 32 - ns
tf Fall time - 10 - ns

Table 8. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 13 A

ISDM (1)
Source-drain current (pulsed) - 52 A
VSD (2)
Forward on voltage ISD = 13 A, VGS = 0 - 1.6 V
trr Reverse recovery time - 280 ns
ISD = 13 A, di/dt = 100 A/µs
Qrr Reverse recovery charge - 2.85 µC
VDD = 60 V (see Figure 20)
IRRM Reverse recovery current - 20.5 A
trr Reverse recovery time - 388 ns
ISD = 13 A, di/dt = 100 A/µs
Qrr Reverse recovery charge VDD = 60 V, Tj =150 °C - 4.5 µC
(see Figure 20)
IRRM Reverse recovery current - 21 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

DocID026641 Rev 3 5/22

22
Electrical characteristics STD16N50M2, STF16N50M2, STP16N50M2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area (DPAK) Figure 3. Thermal impedance (DPAK)
GIPG230620141307LM
ID
(A)

a
is 10 μs

10
n)
R e
ax ar
(o
DS
m is

100 μs
by in th
ite tion
Lim era
d
Op

1 ms
1
10 ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1 1 10 100 VDS(V)

Figure 4. Safe operating area (TO-220FP) Figure 5. Thermal impedance (TO-220FP)

GIPG230620141448LM
ID
(A)

10
is
a
)
R are
on
S(

10 μs
D
ax s
m thi
by in
d n
ite tio
m ra
Li pe

100 μs
O

1
1 ms
10 ms
0.1
TJ=150 °C
Tc=25 °C
Single pulse
00.1
0.1 1 10 100 VDS(V)

Figure 6. Safe operating area for (TO-220) Figure 7. Thermal impedance (TO-220)
*,3*/0
,'
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LV

5 HD

 —V
RQ
D[ DU
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P LV
E\ WK

—V
G LQ
LWH WLRQ
/LP HUD
2S

PV

PV
7M ƒ&
7F ƒ&
6LQJOHSXOVH

    9'6 9

6/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics

Figure 8. Output characteristics Figure 9. Transfer characteristics

GIPG02306141524LM ID GIPG2606141243LM
ID (A) (A)
VGS=7,8, 9, 10V
28 28 VDS=17.5 V
6V
24 24

20 20

16 16

12 5V
12

8 8

4 4
4V
0 0
0 4 8 12 16 20 VDS(V) 0 2 4 6 8 10 VGS(V)

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
GIPG2606141304LM GIPG2606141319LM
VGS VDS RDS(on)
(V) VDS (V) (Ω)
VDD=400 V 400 VGS=10V
12
ID=13 A
350
10
300 0.250
8
250
6 200

150 0.240
4
100
2
50
0 0 0.230
0 5 10 15 20 Qg(nC) 0 2 4 6 8 10 12 ID(A)

Figure 12. Capacitance variations Figure 13. Output capacitance stored energy
GIPG2606141318LM GIPG26067141339LM
C Eoss
(pF) (μJ)

4
1000
Ciss

3
100

Coss 2

10
1

Crss
1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 VDS(V)

DocID026641 Rev 3 7/22

22
Electrical characteristics STD16N50M2, STF16N50M2, STP16N50M2

Figure 14. Normalized gate threshold voltage vs Figure 15. Normalized on-resistance vs
temperature temperature
VGS(th) GIPG2606141354LM GIPG2606141410LM
RDS(on)
(norm) (norm)
VGS=10V
1.1 ID=250 μA
2.2

1.0 1.8

0.9 1.4

0.8 1

0.7 0.6

0.6 0.2
-75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 TJ(°C)

Figure 16. Normalized V(BR)DSS vs temperature Figure 17. Source-drain diode forward
characteristics
GIPG2606141424LM GIPG2606141300LM
V(BR)DSS VSD(V)
(norm)
ID=1 mA 1.2
1.08
1 TJ=-50°C
1.04
0.9
1.00
0.8 TJ=25°C
0.96
0.7

0.92 0.6 TJ=150°C

0.88 0.5
-75 -25 25 75 125 TJ(°C) 0 2 4 6 8 10 12 ISD(A)

8/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Test circuits

3 Test circuits

Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. VG
μF 2.7kΩ
PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit
switching and diode recovery times

A A A L
D
FAST L=100μH
G D.U.T. DIODE
VD
2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD
D ID
G

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
9 %5 '66 ton toff
tr tdoff tf
9' tdon

90% 90%
,'0
10%

,' 10% VDS

0

9'' 9'' 90%

VGS

$0Y 0 10% AM01473v1

DocID026641 Rev 3 9/22

22
Package mechanical data STD16N50M2, STF16N50M2, STP16N50M2

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

10/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Package mechanical data

4.1 DPAK (TO-252) mechanical data

Figure 24. DPAK (TO-252) type A drawings

B3

DocID026641 Rev 3 11/22

22
Package mechanical data STD16N50M2, STF16N50M2, STP16N50M2

Table 9. DPAK (TO-252) type A mechanical data

mm
Dim.
Min. Typ. Max.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1.00 1.50
(L1) 2.80
L2 0.80
L4 0.60 1.00
R 0.20
V2 0° 8°

12/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Package mechanical data

Figure 25. DPAK (TO-252) type A footprint (a)

)3B3

a. All dimensions are in millimeters

DocID026641 Rev 3 13/22

22
Package mechanical data STD16N50M2, STF16N50M2, STP16N50M2

4.2 TO-220FP mechanical data

Figure 26. TO-220FP type B drawings

7012510_Rev_K_B

14/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Package mechanical data

Table 10. TO-220FP type B mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Ø 3 3.2

DocID026641 Rev 3 15/22

22
Package mechanical data STD16N50M2, STF16N50M2, STP16N50M2

4.3 TO-220 mechanical data

Figure 27. TO-220 type A drawings

0015988_typeA_Rev_T

16/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Package mechanical data

Table 11. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

DocID026641 Rev 3 17/22

22
Packaging mechanical data STD16N50M2, STF16N50M2, STP16N50M2

5 Packaging mechanical data

Figure 28. Tape for DPAK (TO-252)

10 pitches cumulative
tolerance on tape +/- 0.2 mm

Top cover P0 D P2
T tape
E

F
K0 W
B1 B0

For machine ref. only A0 P1 D1

including draft and
radii concentric around B0
User direction of feed

Bending radius
User direction of feed

AM08852v1

18/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Packaging mechanical data

Figure 29. Reel for DPAK (TO-252)

T
Reel dimensions

40 mm min.

Access hole

At slot location

A N

Full radius Tape slot G measured at hub

in core for
tape start 25 mm min.
width

AM08851v2

DocID026641 Rev 3 19/22

22
Packaging mechanical data STD16N50M2, STF16N50M2, STP16N50M2

Table 12. DPAK (TO-252) tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3

20/22 DocID026641 Rev 3

STD16N50M2, STF16N50M2, STP16N50M2 Revision history

6 Revision history

Table 13. Document revision history

Date Revision Changes

04-Jul-2014 1 First release.

18-Jul-2014 2 Updated Figure 9.
31-Jul-2014 3 Updated Figure 2 and Figure 4.

DocID026641 Rev 3 21/22

22
 STD16N50M2, STF16N50M2, STP16N50M2

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22/22 DocID026641 Rev 3