DMC2700UDM

20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

 Low On-Resistance
ID Max  Low Gate Threshold Voltage VGS(TH) < 1V
Device BVDSS RDS(ON) Max
TA = +25C  Low Input Capacitance
0.4 @ VGS = 4.5V 1.34A  Fast Switching Speed
Q1 20V  Low Input/Output Leakage
0.5 @ VGS = 2.5V 1.65A
0.7 @ VGS = -4.5V -1.14A  Complementary Pair MOSFET
Q2 -20V  Ultra-Small Surface Mount Package
0.9 @ VGS = -2.5V -0.94A
 ESD Protected Gate to 2.5kV HBM
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 An Automotive-Compliant Part is Available Under Separate
Datasheet (DMC2700UDMQ)

Description and Applications Mechanical Data

This MOSFET has been designed to minimize the on-state resistance
 Case: SOT26
(RDS(ON)) and yet maintain superior switching performance, making it
 Case Material: Molded Plastic, “Green” Molding Compound.
ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Portable Electronics
 Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
 Weight: 0.015 grams (Approximate)

SOT26
D1 S1 D2
D1 D2

G1 G2
ESD PROTECTED
TO 2.5kV HBM
S1 S2
G1 S2 G2
Top View Device Symbol Top View
Pin-Out

Ordering Information (Note 4)

Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel
DMC2700UDM-7 C27 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

C27 = Product Type Marking Code

YM = Date Code Marking
YM

C27 Y = Year (ex: F = 2018)

M = Month (ex: 9 = September)

Date Code Key

Year 2009 ~ 2018 2019 2020 2021 2022 2023 2024 2025
Code W ~ F G H I J K L M
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

DMC2700UDM 1 of 9 August 2018

Document number: DS35360 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMC2700UDM

Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±6 V
TA = +25°C 1.34
Drain Current (Note 5) ID A
TA = +85°C 0.97
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 5 A
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) ISM 5 A

Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±6 V
TA = +25°C -1.14
Drain Current (Note 5) ID A
TA = +85°C -1.07
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -2.5 A
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%) ISM -2.5 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 1.12 W
Thermal Resistance, Junction to Ambient (Note 5) RJA 111 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Note: 5. For a device mounted on 25mm x 25mm FR-4 PCB board with a high coverage of single sided 1oz copper, in still air conditions with two active die.

DMC2700UDM 2 of 9 August 2018

Document number: DS35360 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMC2700UDM

Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 20   V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS   100 nA VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS   ±1.0 µA VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) 0.5  1.0 V VDS = VGS, ID = 250µA
 0.3 0.4 VGS = 4.5V, ID = 600mA
Static Drain-Source On-Resistance RDS(ON)  0.4 0.5  VGS = 2.5V, ID = 500mA
 0.5 0.7 VGS = 1.8V, ID = 350mA
Forward Transfer Admittance |Yfs|  1.4  S VDS = 10V, ID = 400mA
Diode Forward Voltage (Note 6) VSD  0.7 1.2 V VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss  60.67  pF
VDS = 16V, VGS = 0V
Output Capacitance Coss  9.68  pF
f = 1.0MHz
Reverse Transfer Capacitance Crss  5.37  pF
Total Gate Charge Qg  736.6 
VGS = 4.5V, VDS = 10V,
Gate-Source Charge Qgs  93.6  pC
ID = 250mA
Gate-Drain Charge Qgd  116.6 
Turn-On Delay Time tD(ON)  5.1 
VDD = 10V, VGS = 4.5V,
Turn-On Rise Time tR  7.4 
ns RL = 47RG = 10
Turn-Off Delay Time tD(OFF)  26.7 
ID = 200mA
Turn-Off Fall Time tF  12.3 

Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -20   V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS   -100 nA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS   ±1.0 µA VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) -0.5  -1.0 V VDS = VGS, ID = -250µA
0.5 0.7 VGS = -4.5V, ID = -430mA
Static Drain-Source On-Resistance RDS(ON)  0.7 0.9  VGS = -2.5V, ID = -300mA
1.0 1.3 VGS = -1.8V, ID = -150mA
Forward Transfer Admittance |Yfs|  -0.9  S VDS = -10V, ID = -250mA
Diode Forward Voltage (Note 6) VSD  -0.8 -1.2 V VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss  59.76  pF
VDS = -16V, VGS = 0V
Output Capacitance Coss  12.07  pF
f = 1.0MHz
Reverse Transfer Capacitance Crss  6.36  pF
Total Gate Charge Qg  622.4 
VGS = -4.5V, VDS = -10V,
Gate-Source Charge Qgs  100.3  pC
ID = -250mA
Gate-Drain Charge Qgd  132.2 
Turn-On Delay Time tD(ON)  5.1 
VDD = -10V, VGS = -4.5V,
Turn-On Rise Time tR  8.1 
ns RL = 47RG = 10
Turn-Off Delay Time tD(OFF)  28.4 
ID = -200mA
Turn-Off Fall Time tF  20.7 
Note: 6. Short duration pulse test used to minimize self-heating effect.

DMC2700UDM 3 of 9 August 2018

Document number: DS35360 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMC2700UDM

N-CHANNEL – Q1

1.0 1.0

0.8 0.8
)A

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT(A)

(
T
N
E
0.6 R 0.6
R
U
C
N
IA
0.4 R 0.4
D
,D
I TA = 150°C
0.2 0.2 TA = 125°C T A = 85°C
TA = 25°C

TA = -55°C
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristic

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

0.8 
) 0.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

(
E
0.7 C
N TA = 150°C
A 0.4
T
0.6 S TA = 125°C
I
S
E
R TA = 85°C
0.5 -
N 0.3
O
E TA = 25°C
0.4 VGS = 1.8V C
R
U
VGS = 2.5V O 0.2
0.3 S TA = -55°C
-
N
VGS = 4.5V
I
A
0.2 R
D 0.1
,)
0.1 N
O
(S
D
0 R 0
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
ID, DRAIN-SOURCE CURRENT (A) I D , DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature

1.7 0.8

1.5
ON-RESISTANCE (NORMALIZED)

0.6
RDSON, DRAIN-SOURCE
RDSON, DRAIN-SOURCE

ON-RESISTANCE ()

1.3

VGS = 2.5V
1.1 0.4 ID = 250mA

VGS = 4.5V
0.9 ID = 500mA
VGS = 4.5V
0.2 ID = 500mA
VGS = 2.5V
0.7 ID = 250mA

0.5 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (癈 (C)) TA, AMBIENT TEMPERATURE (C) (癈 )
Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature

DMC2700UDM 4 of 9 August 2018

Document number: DS35360 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMC2700UDM

N-CHANNEL – Q1 (Cont.)

1.6 1.0
)V
VGS(TH), GATE THRESHOLD VOLTAGE (V)

(
E
G
A 0.8
T

IS, SOURCE CURRENT (A)

L 1.2
O TTAA==25C
25癈
V
D
L
O 0.6
H
S
E 0.8 ID = 1mA
R
H
T 0.4
E ID = 250µA
T
A
G
, )H 0.4
T 0.2
(
S
G
V

0 0
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
TA , AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current

100 1,000
TA = 150°C
Ciss
)A
IDSS, LEAKAGE CURRENT (nA)
n
(
T
C, CAPACITANCE (pF)

N
E
R 100
TA = 125°C
R
U
C
10 Coss E
G
A
K
C rss
A TA = 85°C
E 10
L
,S
S
D
I
TA = 25°C

1 1
0 5 10 15 20 0 4 8 12 16 20
VDS, DRAIN-SOURCE VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

DMC2700UDM 5 of 9 August 2018

Document number: DS35360 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMC2700UDM

P-CHANNEL – Q2
1.0 1.0
VDS = -5V

0.8 0.8
)
A
-ID, DRAIN CURRENT(A)

-ID, DRAIN CURRENT (A)

(
T
N
E
0.6 R 0.6
R
U
C
N
IA
0.4 R 0.4
D
,D
I-
TA = 150°C
0.2 0.2
TA = 125°C TA = 85°C

TA = 25°C
TA = -55°C
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS , GATE-SOURCE VOLTAGE (V)
Fig.11 Typical Output Characteristics Fig. 12 Typical Transfer Characteristic

1.6 
) 1.0

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )

(
E VGS = -4.5V
1.4 C
N
A 0.8
T
1.2 S TA = 150°C
I
S
VGS = -1.8V E
R TA = 125°C
1.0 -N
0.6
O TA = 85°C
E
0.8 C
R TA = 25°C
U
0.6
VGS = -2.5V O 0.4
S
-N TA = -55°C
IA
0.4 VGS = -4.5V R
D 0.2
, )N
0.2 O
(S
D
0 R 0
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
-ID, DRAIN-SOURCE CURRENT (A) -ID , DRAIN CURRENT (A)
Fig. 13 Typical On-Resistance Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature

1.7 1.0
RDSON, DRAIN-SOURCE ON-RESISTANCE ()

1.5
ON-RESISTANCE (NORMALIZED)

0.8
RDSON, DRAIN-SOURCE

VGS = -2.5V
1.3 ID = -250mA

0.6

1.1
VGS = -4.5V VGS = -4.5V
0.4
ID = -500mA ID = -500mA
0.9

VGS = -2.5V 0.2

0.7 ID = -250mA

0.5 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C) (癈 ) TA, AMBIENT TEMPERATURE (C) (癈 )
Fig. 15 On-Resistance Variation with Temperature Fig. 16 On-Resistance Variation with Temperature

DMC2700UDM 6 of 9 August 2018

Document number: DS35360 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMC2700UDM

P-CHANNEL – Q2 (Cont.)

1.6 1.0
)V
-VGS(TH), GATE THRESHOLD VOLTAGE (V)

(
E
G
A 0.8
T

-IS, SOURCE CURRENT (A)

L 1.2
O
V TA T=A25C
= 25癈
D
L 0.6
O
H
S
E 0.8 ID = -1mA
R
H
T 0.4
E ID = -250µA
T
A
G
, )H 0.4
T 0.2
(
S
G
V
-
0 0
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
TA , AMBIENT TEMPERATURE (°C) -V SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 17 Gate Threshold Variation vs. Ambient Temperature Fig. 18 Diode Forward Voltage vs. Current

100 1,000
T A = 150°C
Ciss
)A
-IDSS, LEAKAGE CURRENT (nA)

n
(
T
C, CAPACITANCE (pF)

N TA = 125°C
E 100
R
R
U
Coss C
10 E
G
A
Crss K
A
E 10
L TA = 85°C
,S
S
D
I-
T A = 25°C

1 1
0 5 10 15 20 0 4 8 12 16 20
-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 19 Typical Total Capacitance Fig. 20 Typical Leakage Current
vs. Drain-Source Voltage

DMC2700UDM 7 of 9 August 2018

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 DMC2700UDM

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT26

SOT26
Dim Min Max Typ
A1 0.013 0.10 0.05
A2 1.00 1.30 1.10
E1 E
A3 0.70 0.80 0.75
b 0.35 0.50 0.38
c 0.10 0.20 0.15
D 2.90 3.10 3.00
e - - 0.95
b e1 - - 1.90
a1 E 2.70 3.00 2.80
e1 E1 1.50 1.70 1.60
L 0.35 0.55 0.40
a - - 8°
a1 - - 7°
A2
A3 A1 All Dimensions in mm

Seating Plane a
L
e c

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT26

C1

Dimensions Value (in mm)

C 2.40
C1 0.95
G 1.60
Y1 G C X 0.55
Y 0.80
Y1 3.20
Y

DMC2700UDM 8 of 9 August 2018

Document number: DS35360 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMC2700UDM

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
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website, harmless against all damages.

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2018, Diodes Incorporated

www.diodes.com

DMC2700UDM 9 of 9 August 2018

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Mouser Electronics

Authorized Distributor

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