DMP3050LVT

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features

ID Max  Low On-Resistance
BVDSS RDS(ON) Max  Low Input Capacitance
TA = +25°C
 Fast Switching Speed
50mΩ @ VGS = -10V -4.5A
-30V  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
75mΩ @ VGS = -4.5V -3.7A  Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT

 Qualified to AEC-Q101 Standards for High Reliability

Description
This MOSFET is designed to minimize the on-state resistance
Mechanical Data
(RDS(ON)) and yet maintain superior switching performance, making it  Case: TSOT26
ideal for high efficiency power management applications.  Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
Applications  Terminal Connections Indicator: See Diagram
 Backlighting  Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
 Power Management Functions Solderable per MIL-STD-202, Method 208
 DC-DC Converters  Weight: 0.013grams (Approximate)

TSOT26 D 1 6 D

D 2 5 D
G
G 3 4 S
S
Top View Device Schematic Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging
DMP3050LVT-7 TSOT26 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

G64 = Product Type Marking Code

YM

G64 YM = Date Code Marking

Y or Y= Year (ex: D = 2016)
M = Month (ex: 9 = September)

Date Code Key

Year 2011 ~ 2016 2017 2018 2019 2020 2021 2022
Code Y ~ D E F G H I J
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

DMP3050LVT 1 of 7 April 2016

Document number: DS35748 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP3050LVT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage (Note 5) VGSS ±25 V
Steady TA = +25C -4.5
ID A
State TA = +70C -3.5
Continuous Drain Current (Note 6) VGS = -10V
NEW PRODUCT

TA = +25C -5.2
t<10s ID A
TA = +70C -4.1
Maximum Continuous Body Diode Forward Current (Note 6) IS -2 A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM -25 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
TA = +25°C 1.6
Total Power Dissipation (Note 6) PD W
TA = +70°C 1.0
Steady State 78
Thermal Resistance, Junction to Ambient (Note 6) RJA
t<10s 49 °C/W
Thermal Resistance, Junction to Case (Note 6) Steady State RJC 13
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current IDSS - - -1 μA VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) -1.0 - -2.0 V VDS = VGS, ID = -250μA
- 36 50 VGS = -10V, ID = -4.5A
Static Drain-Source On-Resistance RDS(ON) m
- 56 75 VGS = -4.5V, ID = -3A
Forward Transfer Admittance |Yfs| - 7.2 - S VDS = -5V, ID = -5A
Diode Forward Voltage VSD - -0.7 -1.0 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss - 620 - pF
VDS = -15V, VGS = 0V,
Output Capacitance Coss - 83 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 62 - pF
Gate Resistance Rg - 10.8 -  VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V) Qg - 5.1 - nC
Total Gate Charge (VGS = -10V) Qg - 10.5 - nC
VDS = -15V, ID = -6A
Gate-Source Charge Qgs - 1.8 - nC
Gate-Drain Charge Qgd - 1.9 - nC
Turn-On Delay Time tD(ON) - 6.8 - ns
Turn-On Rise Time tR - 4.9 - ns VDD = -15V, VGS = -10V,
Turn-Off Delay Time tD(OFF) - 28.4 - ns Rg = 6Ω, ID = -1A
Turn-Off Fall Time tF - 12.4 - ns
Notes: 5. AEC-Q101 VGS maximum is ±20V.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

DMP3050LVT 2 of 7 April 2016

Document number: DS35748 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP3050LVT

20 VGS = -10V VGS = -5.0V

20

VDS = -5.0V

15 15
-ID, DRAIN CURRENT (A)

-ID, DRAIN CURRENT (A)

VGS = -4.5V
VGS = -4.0V
NEW PRODUCT

10 10

VGS = -3.5V

5 5
VGS = -3.0V TA = 150C TA = 85C

TA = 125C TA = 25C

VGS = -2.5V TA = -55C

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5
-V DS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics

0.12 0.10
R DS(ON),DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON),DRAIN-SOURCE ON-RESISTANCE ()

0.10
0.08

0.08
0.06

0.06

0.04
0.04

0.02
0.02

0 0
0 4 8 12 16 20 3 4 5 6 7 8 9 10
-ID, DRAIN SOURCE CURRENT (A) -VGS, GATE SOURCE VOLTAGE (V)
Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs.
Drain Current and Gate Voltage Drain Current and Gate Voltage

0.10 1.7
RDS(ON), DRAIN-SOURCE ON-RESISTANCE()

VGS = -4.5V
1.5
ON-RESISTANCE (NORMALIZED)

0.08
R DS(ON), DRAIN-SOURCE

1.3
0.06 TA = 150 C

1.1
TA = 125 C

0.04 TA = 85C

T A = 25C 0.9

TA = -55C
0.02
0.7

0 0.5
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
-I D, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)
Fig. 5 Typical On-Resistance vs. Fig. 6 On-Resistance Variation with Temperature
Drain Current and Temperature

DMP3050LVT 3 of 7 April 2016

Document number: DS35748 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP3050LVT

0.10 2.0
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()

1.8

VGS(TH), GATE THRESHOLD VOLTAGE(V)

0.08 1.6

1.4
VGS = -4.5V
0.06 1.2
NEW PRODUCT

ID = -5A

1.0

0.04 0.8
VGS = -10V
ID = -10A 0.6

0.02 0.4

0.2
0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (° (癈C))
Fig. 7 On-Resistance Variation with Temperature Fig. 8 Gate Threshold Variation vs. Ambient Temperature

20 10,000
f = 1MHz

16 CT, JUNCTION CAPACITANCE (pF)

-IS, SOURCE CURRENT (A)

1,000
12
Ciss

8
Coss
100

Crss
4

0 10
0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30
-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current Fig. 10 Typical Junction Capacitance

10 100
RDS(ON) Limited
PW =100µs
-VGS, GATE-SOURCE VOLTAGE (V)

8
ID, DRAIN CURRENT (A)

10

6
1 PW =1ms
PW =10ms
4 PW =100ms
PW =1s
0.1 TJ(Max) = 150℃ TC = 25℃
Single Pulse
2 DUT on 1*MRP Board PW =10s
VGS= -10V DC
0.01
0 0.1 1 10 100
0 2 4 6 8 10 12
VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics Figure 12. SOA, Safe Operation Area

DMP3050LVT 4 of 7 April 2016

Document number: DS35748 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP3050LVT

1
D=0.7
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE

D=0.3
D=0.9

0.1
NEW PRODUCT

D=0.1

D=0.05

D=0.02
0.01 D=0.01

D=0.005

D=Single Pulse RθJA(t) = r(t) * RθJA

RθJA = 101℃/W
Duty Cycle, D = t1 / t2
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance

DMP3050LVT 5 of 7 April 2016

Document number: DS35748 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP3050LVT

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

TSOT26

D
e1 01(4x)
NEW PRODUCT

E1/2 TSOT26
Dim Min Max Typ
E/2
A  1.00 
A1 0.010 0.100 
E1 E c
A2 0.840 0.900 
Gauge Plane
D 2.800 3.000 2.900
0 E 2.800 BSC
Seating Plane

L E1 1.500 1.700 1.600

L2 b 0.300 0.450 
c 0.120 0.200 
e b 01(4x)
e 0.950 BSC
A2 e1 1.900 BSC
L 0.30 0.50 
A1
A
L2 0.250 BSC
θ 0° 8° 4°
Seating Plane
θ1 4° 12° 
All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

TSOT26

Dimensions Value (in mm)

C 0.950
Y1 X 0.700
Y 1.000
Y1 3.199
Y

DMP3050LVT 6 of 7 April 2016

Document number: DS35748 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP3050LVT

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NEW PRODUCT

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Copyright © 2016, Diodes Incorporated

www.diodes.com

DMP3050LVT 7 of 7 April 2016

Document number: DS35748 Rev. 4 - 2 www.diodes.com © Diodes Incorporated