ECE 4101

ECE 4101
Industrial & Power Electronics
References
▪ Mithal, Gyanendra K., and Maneesha Gupta. Industrial and
Power Electronics. Khanna Publishers, 2003.

▪ Schuler, Charles A., and William L. McNamee. "Industrial

electronics and robotics." (1986)

▪ M.H. Rashid “Power Electronics Devices, Circuits, and

Applications” 4th edition
 ECE 4101
Course Contents
❑ Power Semiconductor Switches: Rectifier diodes, Fast recovery diodes, Schottky
barrier diode, Power BJT, Power MOSFET, SCR, TRIAC, IGBT and GTO.
Ratings, Static and Dynamic Characteristics, Trigger, Driver and switching-aid
circuits and Cooling.
❑ SCR turn-on and turn-off methods, Triggering circuits, SCR commutation circuits,
SCR series and parallel operation, snubber circuit.
❑ Single phase and three-phase uncontrolled and controlled rectifiers with R-L, R-C,
R-L load effect of source inductance- performance parameters.

❑ Stepper motors: Stepper motor drive circuit using transistors. Dual Converters.
Step up and Step down choppers Time ratio control and current limit control, Buck,
Boost, Buck Boost and Cuk Converters, Concept of Resonant Switching.
❑ Single phase and three phase inverters: PWM techniques, Sinusoidal PWM,
modified Sinusoidal PWM - multiple PWM Voltage and harmonic Control – Series
resonant inverter-Current Sources Inverter.
❑ AC Voltage Controllers, Single phase and three phase cycloconverter –Power
factor control and Matrix Converters. DC Motor Speed control, Induction Motor
Speed Control, Synchronous Motor Speed Control.
 ECE 4101
Industrial & Power Electronics

Power Semiconductor Devices:

▪ Power Diode: 3000 V, 3500 A, 1 kHz
▪ Thyristors: 6000 V, 3500 A, 1 kHz
▪ GTO (Gate turn-off Thyristors): 4 kV, 3 kA, 10 kHz
▪ Triac: 1200 V, 300 A, 400 Hz
▪ BJT: 1200 V, 400 A, 20 Hz
▪ MOSFET: 1000 V, 50 A, 100 kHz
▪ IGBT (Insulated Gate Bipolar Transistor).
 ECE 4101
????

Germanium crystalline structure N-Type P-Type

 ECE 4101
pn Junction

Forward Bias Reverse Bias

I-V Characteristics ECE 4101
Diodes [2 and 3] ECE 4101

V-I characteristics of PN diode

Diodes ECE 4101
Carrier Distribution for FB and RV ECE 4101

Carrier Concentration
Reverse recovery characteristics ECE 4101
Power Diodes ECE 4101

Cross-sectional view V-I characteristics of power diode

Breakdown voltage of power diode
2
Breakdown voltage of non-punch-through PD 𝜀𝐸𝐵𝐷
𝑉𝐵𝐷 =
2𝑞𝑁𝑑
▪ wd > Depletion layer (W) at breakdown
𝜀 =1.05 × 10−12 F/cm
2𝑉𝐵𝐷
W (for VBD ) =
𝐸𝐵𝐷
 ECE 4101
2
𝜀𝐸𝐵𝐷 2𝑉𝐵𝐷
𝑉𝐵𝐷 = W (for VBD ) =
2𝑞𝑁𝑑 𝐸𝐵𝐷

▪ Large breakdown voltage requires lightly doped junctions

▪ The drift layer in the diode must be quite long in high voltage devices so as to accommodate
the long depletion layers
 ECE 4101
Breakdown voltage of punch-through PD
𝑞𝑁𝑑 𝑊𝑑
𝐸1 =
𝜀 𝑞𝑁𝑑 𝑊𝑑 2
𝑉1 =
2𝜀
𝑉2 = 𝐸2 𝑊𝑑
𝑞𝑁𝑑 𝑊𝑑
𝑉2 = 𝐸2 𝑊𝑑 = (𝐸𝐵𝐷 - 𝐸1 )𝑊𝑑 = (𝐸𝐵𝐷 - ) 𝑊𝑑
𝜀
Depletion layer extends the complete length Wd region
𝐸𝐵𝐷 = 𝐸1 + 𝐸2

𝑉𝐵𝐷 = 𝑉1 + 𝑉2
2
𝑞𝑁𝑑 𝑊 𝑑
𝑉𝐵𝐷 = 𝐸𝐵𝐷 𝑊𝑑 -
2𝜀

Electric field profile in reverse bias 𝑉𝐵𝐷 = 𝐸𝐵𝐷 𝑊𝑑

Switching Characteristics of Power Diodes ECE 4101

Growth of excess carrier during turn on

Decay of excess carrier during turn on

Switching Characteristics of Power Diodes ECE 4101

𝑑𝑖
𝐼𝑟𝑟 = 𝑡4
𝑑𝑡

Reverse Recovery Time: trr = t4 + t5

𝑡5
Snappiness Factor 𝑆 =
𝑡4
1 1 1
Reverse Recovery Charge: 𝑄𝑟𝑟 = 𝑄1 + 𝑄2 ≅ 𝐼𝑟𝑟 𝑡4 + 𝐼𝑟𝑟 𝑡5 = 𝐼 𝑡
2 2 2 𝑟𝑟 𝑟𝑟
2𝑄𝑟𝑟
𝐼𝑟𝑟 ≅
𝑡𝑟𝑟
2𝑄𝑟𝑟
𝑡𝑟𝑟 𝑡4 ≅
𝑑𝑖/𝑑𝑡
Series-connected Diodes (Problem) ECE 4101

Two series-connected diodes with reverse bias.

Parallel-connected Diodes ECE 4101

Two parallel-connected diodes.

Series-connected Diodes (Solution) ECE 4101

Two series-connected diodes with steady-state voltage-sharing characteristics

Example-2.3: Two diodes are connected in series, as shown in the above Figure, to share a
total dc reverse voltage of VD = 5 kV. The reverse leakage currents of the two diodes are
IS1 = 30mA and IS2 = 35mA. (a) Find the diode voltages if the voltage-sharing resistances are
equal, R1 = R2 = R = 100kΩ. (b) Find the voltage-sharing resistances R1 and R2 if the diode
voltages are equal, VD1 = VD2 = VD/2.
Power Diode Types ECE 4101

Depending on the recovery characteristics and manufacturing techniques, the power

diodes can be classified into the following three categories:

1. Standard or general-purpose diodes

2. Fast-recovery diodes [e.g. Gold]
3. Schottky diodes
 ECE 4101
Transistor Action
Thyristor ECE 4101

Thyristor = Thyratron + Transistor

▪ Thyristor signifies a solid state device like transistor having

characteristics similar to those of a Thyratron tube.

▪ Thyristors are strictly switching device based on a pnpn structure.

▪ They are bi-stable (on or off) and use internal regenerative

feedback.

▪ They include two, three and four terminal devices and devices
capable of unidirectional (dc) and bidirectional (ac) operation.

Applications of Thyristors: Controlled rectifiers, Choppers, Inverters,

Cycloconverters,Control of DC and AC motors, HF Heating, Control of power
transmission, Power control
 • Silicon-controlled Rectifier (SCR) ECE 4101

• Diac
• Triac Silicon-controlled Rectifier
• UJT
• PUT

Current Rating : Several Thousands Amperes (rms).

Voltage Rating: 5000 V
Switching Speed: Several KHz [2]
 ECE 4101
Working of SCR without gate voltage

Gate open

The applied voltage at which SCR conducts heavily

without gate voltage is called Breakover voltage.
 ECE 4101
Working of SCR with gate voltage
Operation and Static I-V Characteristics of Thyristor (SCR) ECE 4101

Three modes of operation

Reverse Blocking Mode

Forward Conduction Mode Forward Blocking Mode

Static I-V Characteristics

 ECE 4101
Equivalent Circuit of SCR
 ECE 4101
Gate Triggering of Thyristor: Higher the gate
current, lower is the forward breakdown voltage.

Latching Current (𝐼𝐿): After switching ON

the SCR, the minimum anode current
above which the transistor conducts. It is
associated with the turn ON of the device.

Holding Current: The minimum anode current to maintain the SCR in ON

state i.e. the minimum anode current below which the transistor turns off.
It is associated with the turn OFF of the device
Thyristor (SCR) Turn-on Methods: ECE 4101

▪ Forward Voltage Triggering (by avalanche)

▪ Gate triggering (by transistor action)
▪ dv/dt Triggering (by rate of change)
▪ Thermal Triggering (by high temperature)
▪ Radiation Triggering (by light energy)
 ECE 4101
SCR as Switch
• No moving parts
• Switching speed high 109 operations /second
• Large current (30-100 A)
• Small size

SCR Turn On
 ECE 4101
SCR Turn On
 ECE 4101
SCR Application

Power Control, DC shunt motor speed control, Over light detector, etc.

Over light detector

 ECE 4101
SCR Half-wave Rectifier
 ECE 4101
SCR Full-wave Rectifier
HW Example #
20.1, 20.5, 20.6, 20.7, 20.8, 20.9,
20.10, 20.11
 ECE 4101
AC Power Control Using SCR
TRIAC ECE 4101

A Triac is a three-terminal semiconductor switching device which can control alternating

current in a load.
Triac Construction ECE 4101
Triac Operation ECE 4101

TRIAC Characteristics
Transistor equivalent circuit of a Triac ECE 4101

Triac symbol
Transistor Equivalent Circuit of SCR Transistor Equivalent Circuit of TRIAC
Triac Phase Control Circuit ECE 4101
Unijunction Transistor (UJT) ECE 4101

Structure Equivalent Circuit Symbol

Only one junction is formed
>> Unijunction Transistor
 ECE 4101
Operation

With emitter voltage

Emitter open
 ECE 4101
Equivalent Circuit of a UJT

With no applied voltage

 ECE 4101
Characteristics of UJT
 ECE 4101
UJT relaxation oscillator
UJT Relaxation Oscillator ECE 4101
UJT Relaxation Oscillator ECE 4101

For

As

HW# 21.7 to 21.12 [VkM]

&
8.1 [1]
 ECE 4101
Bidirectional Diode Thyristor (DIAC)
DIAC ⇒ DIode that can work on AC
DIAC is a two electrode bidirectional avalanche diode that can be switched from OFF
state to the ON state for either polarity of applied ac voltage.

Construction Symbol

DIAC is mainly used as a triggering device for TRIAC.

Bidirectional Triode Thyristor (TRIAC) ECE 4101

Construction of TRIAC:

I-V Characteristics of TRIAC:

 ECE 4101

Triggering Modes of TRIAC:

▪ Mode 1: MT2 is Positive, Positive Gate Current

▪ Mode 2: MT2 is Positive, Negative Gate Current
▪ Mode 3: MT2 is Negative, Positive Gate Current
▪ Mode 4: MT2 is Negative, Negative Gate Current
Triggering Modes of TRIAC: ECE 4101

▪ Mode 1: MT2 is Positive, Positive Gate Current ▪ Mode 2: MT2 is Positive, Negative Gate Current
Triggering Modes of TRIAC: ECE 4101

Mode 3: MT2 is Negative, Positive Gate Current ▪ Mode 4: MT2 is Negative, Negative Gate Current
 ECE 4101
TRIAC Firing Circuit using DIAC:
PUT Relaxation Oscillator ECE 4101

𝑉𝐴𝐴
𝑇 = 𝑅𝐶 𝑙𝑛
𝑉𝐴𝐴 − 𝑉𝑝
Silicon Unilateral Switch (SUS) ECE 4101

Equivalent Circuit Circuit symbol I-V characteristic with gate open

HW >> SBS, SCS and LASCR,

Next: GTO
 ECE 4101

Field Effect transistor (FET) (review) [Chapter 6_ Boylestad]

Field Effect transistor (FET) ECE 4101

3 Terminals

Temperature Stability
Small Size

Voltage controlled
Current controlled Unipolar
Bipolar N channel/ P channel
npn/pnp High input impedance (1 MΩ - several
hundred MΩ
Field Effect transistor (FET) ECE 4101

Types of FETs
• Junction field-effect transistor (JFET)
• Metal–oxide–semiconductor field-effect transistor (MOSFET)
• Metal– semiconductor field-effect transistor (MESFET)

Metal–oxide–semiconductor field-effect transistor (MOSFET)

• Depletion
• Enhancement
JFET Construction and Characteristics ECE 4101

Water analogy for the JFET control mechanism.

Junction field-effect transistor (JFET)

JFET ECE 4101

Varying reverse-bias potentials

across the p–n junction of an n-
VGS = 0 V, VDS some positive value channel JFET.
JFET ECE 4101

ID versus VDS for VGS = 0 V.

JFET ECE 4101

ID versus VDS for VGS = 0 V.

Pinch-off voltage
JFET ECE 4101

Current source equivalent

IDSS is the maximum drain current for a JFET and is defined by the conditions
VGS = 0 V and VDS > VP
JFET VGS < 0 V ECE 4101

The level of VGS that results in ID = 0 mA is defined by VGS = VP, with VP being a negative voltage
for n-channel devices and a positive voltage for p-channel JFETs.
 ECE 4101
Voltage-Controlled Resistor
 ECE 4101
p-Channel devices

p-Channel JFET.
 ECE 4101
Symbols

n-channel p-channel.
 ECE 4101
Metal–oxide–semiconductor field-effect transistor (MOSFET)
• Depletion
• Enhancement

Depletion-Type MOSFET construction

There is no direct electrical connection between the

gate terminal and the channel of a MOSFET.

n-Channel depletion-type MOSFET.

 Basic Operation and Characteristics ECE 4101

Drain and transfer characteristics for an n-channel depletion-

type MOSFET.

n-Channel depletion-type MOSFET with VGS = 0 V and

applied voltage VDD .
Depletion-Type MOSFET ECE 4101
p -Channel Depletion-Type MOSFET ECE 4101

p-Channel depletion-type MOSFET

n-Channel depletion-type MOSFET
Enhancement-type MOSFET ECE 4101

Channel formation in the n-channel

n-Channel enhancement-type MOSFET. enhancement-type MOSFET.

The level of VGS that results in the significant increase in drain current is
called the threshold voltage and is given the symbol VT .
n-channel Enhancement-type MOSFET ECE 4101
CMOS ECE 4101

CMOS Inverter
 ECE 4101
Series and Parallel Operation of Thyristors

High Voltage High Current

Actual voltage/current rating of the whole string

String Efficiency = <= 1
(Individual voltage/current ratingof one thyristor)×n

n = Number of thyristors in the string

String Efficiency = 1
Need identical V-I characteristics of each thyristor

DRF = 1- String Efficiency

Series Operation of Thyristors ECE 4101

Leakage Resistance = V/I0

▪ Voltage across SCR1 is V1 but that across SCR2 is V2 , which is much less than V1.
▪ Therefore, SCR2 potential is not fully utilized.
▪ Hence, the string can block (V1 + V2 ) rather than 2V1.
▪ String efficiency = (V1 + V2 ) 2V1 = 1/2 (1 + V2 /V1 )

❖ Although the two SCRs have identical ratings, voltages shared them are unequal and
the string efficiency is less than one.
Static Voltage Equalization of Series Connected Thyristor String ECE 4101

𝐼1 = 𝐼 − 𝐼𝑏1 𝐼2 = 𝐼 − 𝐼𝑏2
Voltage across thyristor T1 𝑉𝑏1 = 𝐼1 𝑅
Voltage across remaining (n -1) thyristors 𝑉𝑏(𝑛−1) = (𝑛 − 1)𝐼2 𝑅

𝑉𝑠 = 𝐼1 𝑅 + 𝑛 − 1 𝐼2 𝑅 = 𝑉𝑏1 + 𝑛 − 1 𝑅 𝐼 − 𝐼𝑏2
= 𝑉𝑏1 + 𝑛 − 1 𝑅 𝐼1 − 𝐼𝑏2 − 𝐼𝑏1
= 𝑉𝑏1 + 𝑛 − 1 𝑅𝐼1 − n − 1 𝑅∆𝐼𝑏 𝑛𝑉𝑏1 − 𝑉𝑠
= 𝑛𝑉𝑏1 − (𝑛 − 1)𝑅∆𝐼𝑏 𝑅=
(𝑛 − 1)∆𝐼𝑏
Dynamic Voltage Equalisation of Series Connected Thyristor String: ECE 4101

Turn on time:
T2 > T1

Unequal voltage distribution during turn-on

Voltage across T1 and T2 are widely different (e.g. Vs and 0)
ECE 4101
Parallel Operation of Thyristors ECE 4101

When load current needed is more than the rated current of a given single thyristor, several
similar thyristors are connected in parallel in a string.

Due to different V-I characteristics SCRs of

same rating shares unequal current in a string.

The total current carried by the

parallel unit is (I1 + I2 ) and not the
rated current 2I1 as desired.

I1 > I2
 ECE 4101
Parallel Operation of Thyristors
Heat sink?

Fig 7.7 Self Study

 ECE 4101

1. SCR, TRIAC, SCR turn-on and turn-off methods, Triggering circuits, SCR commutation circuits, SCR series
and parallel operation, snubber circuit, DIAC, TRIAC, UJT, PUT, SUS,SBS,LASCR,SCS, and GTO [2_Sets ]
Chapter 6 [1] 6.1-6.4, 6.7-6.14, 6.22, 6.26
Chapter 7 [1] 7.1-7.4, 7.5 [Figure 7.6 circuit diagram and operating principle], 7.6-7.7,
SCR rectification: examples 20.1, 20.5, 20.6, 20.7, 20.8, 20.9, 20.10, 20.11 and similar problems [VK Metha]
Chapter 8 [1] 8.6-8.9, 8.12, 8.14, 8.15-8.18

2. Power MOSFET and IGBT:

Reviewed all general MOSFET [Enhancement and depletion type from chapter 6 of Boylestad Book]
For Power MOSFET Chapter 4 [1]: 4.1-4.4 and 4.7 [IGBT] Constructions and operating principle.
3. Single phase and three-phase uncontrolled and controlled rectifiers with R, R-L, R-E loads

4. Chapter 2 [4] 2.2.1, 2.2.2, 2.2.3, 2.5.1, 2.9

4. Chapter 3 [4] 3.2.1, 3.2.2, 3.2.3 (Example 3.1 and relevant problems Only] [2,3, and 4 2 Sets]