DD55F160 Diode Module
DD55F160 Diode Module
DD55F160 Diode Module
DD55F/KD55F (M)
UL;E76102
Power Diode Module DD55F series are designed for various rectifier circuits. DD55F
has two diode chips connected in series in 25mm (1inch) width package and the mounting
base is elctrically isolated from elements for simple heatsink construction. Wide voltage
92
rating up to, 1,600V is avaiable for various input voltage. 2- 6 20 20 20
● Isolated mounting base
25
12
● Two elements in a package for simple (single and three phase) bridge
12.5
connections
● Highly reliable glass passivated chips
M5X10
● High surge current capability
4.0
(Applications)
31max
Various rectifiers, Battery chargers, DC motor drives
6.5
DD
19.5
3 2 1 80±0.2
2
3 1
KD Unit:a
■Electrical Characteristics
Symbol Item Conditions Ratings Unit
IRRM Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave. Tj=125℃ 15 mA
VFM Forward Voltage Drop, max. Forward current 170A,Tj=25℃,Inst. measurement 1.40 V
Rth(j-c) Thermal Impedance, max. Junction to case 0.50 ℃/W
SanRex ®
D.C.
2
80 Single Phase
Three Phase
102
60
5 Max.
40
2
20
101
5 0
0 1 2 3 4 5 0 10 20 30 40 50 60 70 80 90 100
Forward Voltage Drop(V) Average Forward Current(A)
130 2000
Per one element Surge Forward Current(A) Per one element
120 T
j=25℃ start
110 1500
100
90 1000 60Hz
D.C.
Single Phase
Three Phase
80 50Hz
70 500
60
50 0 0
0 10 20 30 40 50 60 70 80 90 10 2 5 101 2 5 102
Average Forward Current(A) Time(Cycles)
Transient Thermal Impedance θj-c(℃/W)
Id(Av) Id(AV)
B6
400 400
Rth:1.0℃/W 80
Rth:0.8℃/W Rth:0.6℃/W 90
Rth:0.6℃/W Rth:0.4℃/W
300 Rth:0.4℃/W 300 Rth:0.2℃/W
B2 90 Rth:0.8℃/W
Rth:0.2℃/W Rth:0.1℃/W
Rth:0.1℃/W 100
200 100 200
110
110 100
100
120
120
0 125 125
0 50 100 0 40 80 120 0 50 100 0 40 80 120
Output Current(A) Ambient Temperature(℃) Output Current(A) Ambient Temperature(℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
This datasheet has been download from:
www.datasheetcatalog.com