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    Vcore Mosfet

    Uploaded by

    Erick Miranda

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Vcore Mosfet

    Uploaded by

    Erick Miranda
    27 views8 pages

    Copyright

    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    27 views8 pages

    Vcore Mosfet

    Uploaded by

    Erick Miranda

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 8

    The changed Process for Repair

    VCORE MOSFET

    • Reported by Engineering
    The changed Process for Repair VCORE MOSFET
    The defect VCORE The original RMA repair process The changed repair process
    phenomenon
    Analog mode Replace all phases and after confirmed each Replace the defect phase MOSFET and
    PWM(H55, H61, B75, phase waveform confirmed the short circuit and after
    B85) confirmed each phase waveform ( 2 nd RMA
    Tracking)
    MOSFET burn out

    Digital mode Replace the single defect phase and after Replace the single defect phase and after
    PWM (Z77, Z87) confirmed each phase waveform confirmed each phase waveform

    PWR stage burn out

    P.1
    VCORE MOSFET Judgment Method
    1. High side MOSFET :
    1-1. Measure the impedance between each other of D and S pin of MOSFET , if the impedance is ok that means
    all High side MOSFET are OK, otherwise if the impedance is abnormal , need to the second step to determine
    which MOSFET is damaged.
    1-2. Measure the impedance between each other of G and S of MOSFET , if the impedance is found abnormal, it
    is determined that this MOSFET is damaged.
    2. Low side MOSFET :
    2-1. Measure the impedance between each other of D and S pin of MOSFET , if the impedance is ok that means
    all Low side MOSFET are OK, otherwise if the impedance is abnormal , need to the second step to determine
    which MOSFET is damaged.
    2-2. Measure the impedance between each other of G and S of MOSFET , if the impedance is found abnormal, it
    is determined that this MOSFET is damaged.
    3- PowIRstage IR3553,IR3550 & DrMOS SIC769 :
    3-1 The measurement method is same , please refer to the following instructions to measure the pin of
    PowIRstage & DrMOS High side MOSFET and Low side MOSFET.

    3-2. For PowIRstage IR3550, IR3553 can be reference measured the signal PWM impedance of PIN 26 or 19 to
    further determine which PowIRstage is damaged.

    P.2
    VCORE PowIRstage MOSFET Measuring
    FET IR3550 IR3553 RJK3B7DPA RJK0393DPA SIC769
    TYPE
    VIN / PIN18 to VIN / PIN14 to VIN12 / VIN / PIN8 to
    23 16 PIN5,6,7,8 14
    High
    side PWM/PIN26 PWM/PIN19 UGATE1/PIN4 GH / PIN6

    VCORE / VSW /
    SW / PIN6 to 15 SW / PIN6 to 11 PIN1,2,3 PIN15,29 to
    VCORE / 35
    PIN5,6,7,8 PHASE / PIN7

    Low LGATE1/PIN4 GL / PIN36


    side
    PGND / PGND / GND / PIN1,2,3 PGND / PIN16
    PIN4,16,17 PIN4,12,13 to 28
    IR3550 PowIRstage Typical Application Diagram

    P.4
    IR3553 PowIRstage Typical Application Diagram

    P.5
    N Channel Power MOSFET Power Switching Pinout

    RJK3B7DPA RJK0393DPA
    Silicon N Channel Power MOSFET Silicon N Channel Power MOSFET
    Power Switching Power Switching

    5 6 7 8 5 6 7 8
    DD DD D DD D
    5 678 5 6 7 8

    4 1,2,3 Source 4 1,2,3 Source


    4321 G 4 Gate G 4 Gate
    4 3 21
    5,6,7 Drain 5,6,7 Drain

    S S S S S S
    1 2 3 1 2 3

    P.6
    SiC769CD DrMOS Power Stage Application Diagram

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